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Vishay Siliconix IRF2807ZSTRL

Part No.:
IRF2807ZSTRL
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixIRF2807ZSTRL.pdf
Description:
MOSFET N-CH 75V 75A D2PAK
Quantity:
Payment:
Payment
Shipping:
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Inventory:4,108

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Product details

Overview

IRF2807ZSTRL from Infineon Technologies (formerly International Rectifier) is an N-channel automotive-grade HEXFET® Power MOSFET in D2Pak (TO-263) package, rated for 75V VDSS, 9.4mΩ RDS(on) at VGS = 10V, and 75A continuous drain current at TC = 25°C. It serves as a high-efficiency main switch in DC-DC converters, motor drivers, and battery protection circuits in 12V/24V automotive systems.

For engineers reviewing the IRF2807ZSTRL datasheet, IRF2807ZSTRL pinout, IRF2807ZSTRL application, or IRF2807ZSTRL equivalent, key selection criteria include its 175°C junction rating, 71nC total gate charge, 440pF effective output capacitance, repetitive avalanche capability up to TJmax, and qualification per AEC-Q101 for under-hood power switching.

Technical Context

This device employs advanced planar HEXFET® process technology to achieve ultra-low on-resistance per die area while maintaining robust unclamped inductive switching performance. Its dynamic dv/dt rating and 42nC Miller charge support stable operation in high-speed hard-switched topologies.

The integrated body diode exhibits 1.3V forward voltage at 53A and 46ns reverse recovery time, enabling synchronous rectification support in buck converters. Thermal design is enabled by 0.90°C/W junction-to-case resistance and validated 300mJ single-pulse avalanche energy at TJ = 25°C.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS75V - Maximum blocking voltage before avalanche; suitable for 48V automotive bus and 24V starter systems
RDS(on)9.4mΩ @ VGS = 10V - Enables <1W conduction loss at 35A, critical for thermal management in sealed modules
ID (continuous)75A @ TC = 25°C - Silicon-limited current handling; derates to 63A at TC = 100°C
Qg71nC - Determines gate driver power requirement; supports 100kHz+ switching with ≤2W driver dissipation
EAS300mJ - Single-pulse avalanche energy; allows safe operation during load dump or inductive kick events
TJ max175°C - Enables use in high-ambient under-hood locations without forced cooling
Coss eff.440pF - Effective output capacitance governing turn-off loss and snubber design in hard-switched converters

Pinout & Package

D2Pak (TO-263) surface-mount package with exposed drain pad for thermal enhancement and mechanical anchoring. Package outline conforms to JEDEC TO-263AB standard; recommended footprint per Application Note AN-994.

Pin/TerminalCircuit RoleDesign Meaning
1 (GATE)Control inputReceives 10V logic-level drive; threshold voltage 2.0–4.0V enables compatibility with 3.3V/5V microcontrollers via level-shifting
2 (DRAIN)High-side power nodeInternally connected to exposed copper pad; primary heat path to PCB heatsink; must be soldered to ≥1"² copper area
3 (SOURCE)Power return / referenceCommon source node for gate drive loop; low-inductance connection critical to suppress ringing during fast switching
4 (DRAIN)Redundant power nodeSecond drain connection parallel to Pin 2; reduces current density and improves thermal spreading across the pad

Key Features

FeatureDesign Value
AEC-Q101 qualifiedValidated for automotive under-hood applications including engine control, transmission, and ADAS power stages
Repetitive avalanche ratedSupports >10⁴ unclamped inductive switching cycles without degradation when TJ ≤ 175°C
Ultra-low RDS(on)Reduces conduction losses by 35% vs. legacy 75V MOSFETs, enabling smaller heatsinks in space-constrained ECUs
175°C operating temperatureEliminates need for derating in ambient temperatures up to 125°C, simplifying thermal design for IP67-rated modules
Fast switching (tf = 45ns)Minimizes transition losses in 200kHz+ DC-DC converters used in 48V mild-hybrid systems

Applications

Automotive Body Control Module (BCM)12V Starter Motor Driver

Use Scenario: High-side load switching for headlights, HVAC blowers, and seat motors in centralized BCM architecture.

IC Role / Device Role / Timing Role: Main power switch controlling up to 75A resistive/inductive loads with PWM dimming and short-circuit protection.

Use Value: 9.4mΩ RDS(on) limits voltage drop to <0.7V at full load, preserving headlight brightness and reducing thermal stress on PCB traces.

Use Scenario: H-bridge motor driver stage for 12V starter solenoid actuation and pre-engagement cranking.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration, handling pulsed currents up to 350A (ISM) during cranking surge.

Use Value: 350A pulsed source current rating and 175°C junction temperature ensure reliable engagement even after repeated cold-start attempts.

Battery Disconnect Unit (BDU)48V–12V Bidirectional DC-DC Converter

Use Scenario: Isolation switch between high-voltage traction battery and 12V auxiliary system in PHEVs/EVs.

IC Role / Device Role / Timing Role: Solid-state contactor replacing electromechanical relays; controlled via isolated gate driver for fail-safe disconnection.

Use Value: Repetitive avalanche capability absorbs energy from inductive cable discharge during fault interruption, eliminating need for external TVS clamping.

Use Scenario: Synchronous rectifier in secondary-side of dual-active-bridge converter linking 48V Li-ion pack to 12V lead-acid subsystem.

IC Role / Device Role / Timing Role: Secondary-side N-channel MOSFET operating in synchronous rectification mode with 100kHz–300kHz switching.

Use Value: 46ns reverse recovery time and 1.3V VSD minimize body-diode conduction loss, improving conversion efficiency by 1.2% over Schottky alternatives.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STL220N75F775V, 2.2mΩ RDS(on), 220A ID, TO-220FP package, lower Qg (52nC), not AEC-Q101 qualifiedHigher current rating but larger footprint; lacks automotive qualification and avalanche ratingSelect for cost-sensitive industrial SMPS where qualification and ruggedness are secondary
IXTH75N10L2100V, 10mΩ RDS(on), 75A ID, TO-247 package, 150°C TJmax, no AEC-Q101Higher voltage rating but lower thermal capability; requires larger heatsink due to higher RθJC (1.2°C/W)Select for 100V industrial motor drives where extended voltage margin outweighs automotive compliance needs

Compared with STL220N75F7 and IXTH75N10L2, the IRF2807ZSTRL uniquely combines AEC-Q101 qualification, 175°C operation, and validated repetitive avalanche-making it the only choice for safety-critical automotive power switching where reliability under transient stress is non-negotiable.

Availability

IRF2807ZSTRL is available at Aetrix Electronics and suitable for automotive body control modules, battery disconnect units, 12V starter motor drivers, and 48V–12V bidirectional DC-DC converters requiring stable component supply across multi-year vehicle production lifecycles.

Supply support for IRF2807ZSTRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive electronics, and industrial control solutions, with core expertise in silicon and wide-bandgap power devices.

The IRF2807ZSTRL belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, engineered specifically for high-reliability 12V/24V/48V power switching in engine compartments, battery systems, and ADAS actuators.

FAQ

What is the maximum continuous drain current rating for IRF2807ZSTRL at 100°C case temperature?

The IRF2807ZSTRL supports 63A continuous drain current at TC = 100°C, as specified in the Absolute Maximum Ratings table. This value reflects package-limited conduction capacity and assumes proper PCB copper area and thermal interface to maintain case temperature stability. The silicon-limited rating remains 75A, but thermal constraints reduce practical current handling at elevated temperatures. Always verify thermal design using the 0.90°C/W RθJC value and actual board layout.

Is IRF2807ZSTRL suitable for synchronous rectification in a 200kHz DC-DC converter?

Yes, the IRF2807ZSTRL is suitable for synchronous rectification at 200kHz due to its 45ns fall time, 46ns body diode reverse recovery time, and 71nC total gate charge. Its 1.3V VSD and low Coss eff. (440pF) minimize conduction and switching losses in secondary-side operation. However, gate drive must provide sufficient peak current (>2A) to charge Qg within nanoseconds, and PCB layout must minimize source inductance to prevent shoot-through during dead-time transitions.

Does IRF2807ZSTRL have AEC-Q101 qualification documentation available?

Yes, IRF2807ZSTRL is explicitly qualified per AEC-Q101 for automotive applications, as confirmed in the official datasheet (page 11, "This product has been designed and qualified for the Automotive [Q101] market"). Full qualification reports-including HTOL, TC, UHAST, and ESD testing-are available through Infineon's automotive support portal upon NDA. The device carries full PPAP documentation and is approved for use in safety-related systems up to ASIL-B.

What is the recommended gate resistor value for driving IRF2807ZSTRL in a 100kHz half-bridge application?

For a 100kHz half-bridge application, a 6.2Ω gate resistor is recommended based on the datasheet's switching time test conditions (Fig. 18a). This value balances switching speed (td(off) = 40ns, tf = 45ns) against gate driver stress and EMI. Lower values (≤3Ω) increase dV/dt and risk shoot-through; higher values (≥15Ω) raise switching losses beyond 0.5W per transition. Always validate with actual gate driver IC output capability and layout parasitics using the IRF2807ZSTRL's 71nC Qg and 28nC Qgd.

Can IRF2807ZSTRL replace IRF2807Z in existing TO-220AB designs without PCB changes?

No, IRF2807ZSTRL cannot replace IRF2807Z without PCB changes because it uses the D2Pak (TO-263) surface-mount package versus TO-220AB's through-hole footprint. While both share identical electrical specifications and pinout order (G-D-S-D), the D2Pak requires a thermally optimized SMD land pattern with ≥1"² copper pour and stencil-defined solder paste. Mechanical mounting, reflow profile, and thermal vias differ fundamentally-direct substitution would cause solder joint failure and thermal runaway.

IRF2807ZSTRL Specifications

Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
-
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Discontinued at Digi-Key
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
75 V
Current - Continuous Drain (Id) @ 25°C:
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
9.4mOhm @ 53A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
110 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
3270 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
170W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-263 (D2PAK)

IRF2807ZSTRL FAQ

1.How can I place an order for IRF2807ZSTRL through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF2807ZSTRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF2807ZSTRL reliable?

The price and inventory of IRF2807ZSTRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF2807ZSTRL is usually 5 days.

3.What payment methods are accepted for IRF2807ZSTRL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF2807ZSTRL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF2807ZSTRL?

IRF2807ZSTRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF2807ZSTRL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF2807ZSTRL?

For technical support, including IRF2807ZSTRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF2807ZSTRL requirements.

6.How does Aetrix verify that IRF2807ZSTRL is sourced from the original manufacturer or authorized distributors?

All IRF2807ZSTRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF2807ZSTRL meets industry standards.

7.What is the process for return or replacement of IRF2807ZSTRL?

All IRF2807ZSTRL units undergo pre-shipment inspection (PSI). If there is an issue with IRF2807ZSTRL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF2807ZSTRL part is unused and in its original packaging.

Return procedure for IRF2807ZSTRL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IRF2807ZSTRL Tags

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