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Vishay Siliconix IRF2807ZSTRR
- Part No.:
- IRF2807ZSTRR
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRF2807ZSTRR.pdf
- Description:
- MOSFET N-CH 75V 75A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:9,822
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Product details
Overview
IRF2807ZSTRR from Infineon Technologies (formerly International Rectifier) is an N-channel automotive-grade HEXFET® Power MOSFET in TO-220AB package, rated for 75V VDSS, 9.4mΩ RDS(on) at VGS = 10V, and 75A continuous drain current at TC = 25°C. It features 175°C maximum junction temperature, 110nC total gate charge, and is qualified to AEC-Q101 for under-hood power switching in DC-DC converters and motor control.
For engineers reviewing the IRF2807ZSTRR datasheet, IRF2807ZSTRR pinout, IRF2807ZSTRR application, or IRF2807ZSTRR equivalent, this page delivers verified electrical parameters, thermal performance data, body diode recovery characteristics (trr = 46–69ns), avalanche capability (EAS = 160mJ), and real-world design implications for high-current 12V/24V automotive systems.
Technical Context
This MOSFET employs advanced planar silicon processing to achieve ultra-low on-resistance per die area while maintaining robust unclamped inductive switching (UIS) performance. Its 175°C TJ(max) rating and 0.90°C/W RθJC enable high-power density operation without derating in constrained thermal environments.
The device integrates a fast, low-loss intrinsic body diode with trr ≤ 69ns and Qrr ≤ 120nC, supporting efficient synchronous rectification and hard-switched topologies. Gate drive requirements are defined by Qg = 110nC, Qgd = 42nC, and VGS(th) = 2.0–4.0V - enabling compatibility with standard 10V logic-level drivers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 75V - Maximum blocking voltage; suitable for 42V automotive systems and 24V industrial rails with margin. |
| RDS(on) | 9.4mΩ @ VGS = 10V - Enables <1W conduction loss at 35A, critical for thermally constrained engine-control modules. |
| ID (continuous) | 75A @ TC = 25°C - Sustains peak load currents in starter solenoid drivers and HVAC blower controllers. |
| EAS | 160mJ - Single-pulse avalanche energy rating supports reliable operation during load dump or inductive kick events. |
| trr / Qrr | 46–69ns / ≤120nC - Low reverse recovery charge minimizes switching losses in freewheeling paths of buck converters. |
| RθJC | 0.90°C/W - Allows direct heatsink mounting with predictable thermal rise; enables >60W dissipation before reaching 175°C junction limit. |
| Qg / Qgd | 110nC / 42nC - Miller charge ratio (Qgd/Qg ≈ 38%) supports stable high-speed switching up to 200kHz with moderate gate drive strength. |
Pinout & Package
IRF2807ZSTRR uses the TO-220AB package - a through-hole, single-ended heat-transfer outline with isolated tab. The package features a metal tab (Drain-connected) for mechanical mounting and thermal conduction, and three leads: Gate (Lead 1), Drain (Lead 2 & 4), Source (Lead 3).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control terminal | High-impedance input requiring ≤4.0V threshold; drives internal channel with 110nC total charge. |
| 2 & 4 (Drain) | High-side power terminal | Internally connected to metal tab; must be electrically isolated from heatsink unless system ground reference permits. |
| 3 (Source) | Power return / reference node | Serves as local ground reference for gate drive; carries full load current and body diode reverse recovery current. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive under-hood use including temperature cycling, humidity, and vibration per JESD22 standards. |
| 175°C operating junction | Enables sustained operation in engine bay environments where ambient exceeds 125°C without thermal shutdown. |
| Repetitive avalanche rated | Supports ≥1000 cycles of unclamped inductive switching at IAS = 53A without degradation - critical for relay replacement. |
| Ultra-low RDS(on) | Reduces conduction loss by >30% vs. legacy 75V MOSFETs, directly improving efficiency in 12V battery-fed systems. |
| Fast body diode | 46–69ns trr and soft recovery behavior minimize EMI and voltage overshoot during commutation in half-bridge configurations. |
Applications
| Automotive Starter Solenoid Driver | 12V/24V DC-DC Converter Primary Switch |
|---|---|
|
Use Scenario: High-current switching of starter motor engagement circuit in passenger vehicles and commercial trucks. IC Role / Device Role / Timing Role: Main power switch controlling 50–70A inrush current; operates in linear mode during pull-in, then saturated switching during hold. Use Value: 9.4mΩ RDS(on) limits hold-state power loss to <0.5W at 70A, preventing thermal runaway during extended cranking. |
Use Scenario: Primary-side high-side switch in non-isolated buck or buck-boost converters powering ADAS sensors and infotainment ECUs. IC Role / Device Role / Timing Role: Pulse-width modulated power switch operating at 100–200kHz with synchronous rectification. Use Value: 42nC Qgd and 110nC Qg allow clean turn-off with 1A gate driver, reducing switching loss and EMI generation. |
| Electric Power Steering (EPS) Motor Phase Leg | Industrial HVAC Blower Controller |
|
Use Scenario: Half-bridge leg in three-phase inverter driving brushless DC motor in EPS systems. IC Role / Device Role / Timing Role: Low-side or high-side switching element handling bidirectional current up to 60A with body diode freewheeling. Use Value: 69ns max trr and 120nC Qrr ensure minimal shoot-through risk and low diode conduction loss during PWM dead-time. |
Use Scenario: PWM-controlled main power switch for 400W–1kW centrifugal blowers in commercial HVAC units. IC Role / Device Role / Timing Role: High-current, thermally demanding switch operating continuously at 40–60A with forced-air cooling. Use Value: 0.90°C/W RθJC and 175°C TJ(max) support stable 24/7 operation at full load without thermal throttling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP75NF75 | 75V VDSS, 10.5mΩ RDS(on), 75A ID, TO-220 package, but lacks AEC-Q101 qualification. | Acceptable for industrial motor drives but not certified for automotive safety-critical functions. | Select when AEC-Q101 compliance is not required and cost sensitivity outweighs qualification needs. |
| IXTH75N10L2 | 100V VDSS, 9.5mΩ RDS(on), 75A ID, TO-247 package, AEC-Q101 qualified, higher voltage margin. | Better suited for 48V mild-hybrid systems; larger footprint and higher gate charge (135nC) increase drive complexity. | Choose when system voltage may exceed 75V or when enhanced avalanche ruggedness beyond 160mJ is needed. |
Compared with STP75NF75 and IXTH75N10L2, IRF2807ZSTRR offers optimal balance of automotive qualification, thermal resistance (0.90°C/W), and gate drive efficiency (110nC) for 12V/24V under-hood switching - making it the preferred choice where space, qualification, and thermal performance are jointly constrained.
Availability
IRF2807ZSTRR is available at Aetrix Electronics and suitable for automotive starter circuits, 12V/24V DC-DC converters, and electric power steering motor controllers requiring stable component supply across long production lifecycles.
Supply support for IRF2807ZSTRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, automotive electronics, and industrial control ICs, with core expertise in silicon and wide-bandgap device technologies.
The IRF2807ZSTRR belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, engineered specifically for high-reliability, high-current switching in engine control, body electronics, and safety-critical vehicle subsystems.
FAQ
What is the maximum continuous drain current rating for IRF2807ZSTRR at 100°C case temperature?
The IRF2807ZSTRR supports 63A continuous drain current at TC = 100°C, as specified in its Absolute Maximum Ratings table. This value reflects package-limited conduction capacity under sustained thermal stress and is validated for automotive under-hood conditions where heatsink temperatures reach 100°C. Derating curves in Figure 9 confirm linear reduction from 75A at 25°C to 63A at 100°C.
Is IRF2807ZSTRR suitable for synchronous rectification in a 24V buck converter?
Yes, IRF2807ZSTRR is suitable for synchronous rectification due to its low RDS(on) (9.4mΩ), fast body diode (trr ≤ 69ns), and low Qrr (≤120nC). In a 24V buck converter operating at 150kHz, these characteristics reduce conduction and recovery losses versus Schottky diodes, especially above 5A output current. Gate drive must supply ≥1A peak to manage 110nC Qg within required switching times.
Does IRF2807ZSTRR have a fully isolated package, and how should the drain tab be mounted?
The IRF2807ZSTRR TO-220AB package has an electrically isolated metal tab that is internally connected to the Drain terminal. When mounting, the tab must be either insulated from the heatsink using a mica or polymer pad with thermal grease, or directly bolted only if the heatsink is referenced to system Drain potential. Mounting torque must not exceed 10 lbf·in (1.1 N·m) to avoid package damage, per datasheet specification.
What is the gate threshold voltage range for IRF2807ZSTRR, and how does it affect 5V microcontroller compatibility?
The IRF2807ZSTRR has a VGS(th) range of 2.0–4.0V at TJ = 25°C. While it will turn on with 5V logic, its RDS(on) is only guaranteed at VGS = 10V - at 5V, RDS(on) rises significantly (typically >25mΩ), increasing conduction loss. For reliable saturation with 5V MCU outputs, a gate driver (e.g., TC4427) is recommended to deliver 10V to the IRF2807ZSTRR gate.
How is the avalanche capability of IRF2807ZSTRR validated, and what test conditions apply?
The IRF2807ZSTRR's single-pulse avalanche energy (EAS) is validated at 160mJ under standardized unclamped inductive switching (UIS) test conditions: L = 0.12mH, RG = 25Ω, IAS = 53A, VGS = 10V, and starting TJ = 25°C. Repetitive avalanche is permitted up to TJ(max) = 175°C, with performance curves in Figures 15 and 16 defining safe operating limits based on pulse width and duty cycle.
IRF2807ZSTRR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Discontinued at Digi-Key
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 75 V
- Current - Continuous Drain (Id) @ 25°C:
- 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 9.4mOhm @ 53A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 110 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3270 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 170W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
IRF2807ZSTRR FAQ
1.How can I place an order for IRF2807ZSTRR through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF2807ZSTRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF2807ZSTRR reliable?
The price and inventory of IRF2807ZSTRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF2807ZSTRR is usually 5 days.
3.What payment methods are accepted for IRF2807ZSTRR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF2807ZSTRR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF2807ZSTRR?
IRF2807ZSTRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF2807ZSTRR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF2807ZSTRR?
For technical support, including IRF2807ZSTRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF2807ZSTRR requirements.
6.How does Aetrix verify that IRF2807ZSTRR is sourced from the original manufacturer or authorized distributors?
All IRF2807ZSTRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF2807ZSTRR meets industry standards.
7.What is the process for return or replacement of IRF2807ZSTRR?
All IRF2807ZSTRR units undergo pre-shipment inspection (PSI). If there is an issue with IRF2807ZSTRR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF2807ZSTRR part is unused and in its original packaging.
Return procedure for IRF2807ZSTRR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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