Vishay Siliconix IRF3205ZSTRL
- Part No.:
- IRF3205ZSTRL
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRF3205ZSTRL.pdf
- Description:
- MOSFET N-CH 55V 75A D2PAK
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
IRF3205ZSTRL from Infineon Technologies (formerly International Rectifier) is an N-channel automotive-grade HEXFET® Power MOSFET in TO-220AB package, rated for 55 V VDSS, 6.5 mΩ RDS(on) at VGS = 10 V, and 75 A continuous drain current at TC = 25°C. It integrates a robust body diode, supports repetitive avalanche up to TJmax = 175°C, and is qualified per AEC-Q101 for under-hood power switching in DC-DC converters and motor control.
For engineers reviewing the IRF3205ZSTRL datasheet, IRF3205ZSTRL pinout, IRF3205ZSTRL application, or IRF3205ZSTRL equivalent, key selection criteria include its 0.90°C/W junction-to-case thermal resistance, 76 nC total gate charge, fast 95 ns rise time, and validated unclamped inductive switching performance per Figures 12a–12b and 15–16 in the official datasheet.
Technical Context
This device employs advanced silicon processing to minimize on-resistance per die area while maintaining ruggedness for automotive transients. Its gate threshold voltage (2.0–4.0 V) enables compatibility with 3.3 V and 5 V logic-level drivers when operated with sufficient VGS margin, and its 310 pF reverse transfer capacitance (Crss) directly impacts Miller-effect-induced turn-off delay in high-speed switching.
The integrated body diode exhibits 1.3 V forward voltage at 66 A and 28–42 ns reverse recovery time, enabling synchronous rectification in buck converters without external diodes. Thermal design must account for its 62°C/W junction-to-ambient rating in free-air and 40°C/W on PCB mount - critical for sustained 75 A operation in engine control units.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 55 V - Maximum blocking voltage before avalanche; defines safe operating range in 42 V automotive systems and 24 V industrial supplies. |
| RDS(on) | 4.9–6.5 mΩ @ VGS = 10 V - Directly determines conduction loss (Pcond = ID² × RDS(on)) in high-current paths like starter solenoid drivers. |
| ID (TC = 25°C) | 75 A - Continuous drain current limited by silicon capability; requires heatsinking to sustain at full rating. |
| Qg | 76–110 nC - Total gate charge dictates driver strength requirement; 6.8 Ω gate resistor yields 45 ns turn-off delay in typical test conditions. |
| TJmax | 175°C - Maximum junction temperature; enables operation in under-hood environments where ambient exceeds 125°C. |
| EAS | 110 mJ - Single-pulse avalanche energy rating; allows safe handling of inductive kickback in relay and solenoid drive circuits. |
| RθJC | 0.90°C/W - Junction-to-case thermal resistance; defines minimum heatsink interface performance needed to maintain TJ < 175°C at full load. |
Pinout & Package
IRF3205ZSTRL uses the TO-220AB package - a through-hole, single-ended heat-transfer outline with isolated tab (drain-connected), standardized for mechanical mounting and thermal coupling to heatsinks. The package complies with JEDEC TO-220AB and features 3 leads: Gate (Lead 1), Drain (Lead 2 and 4), Source (Lead 3).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (GATE) | Control terminal | Receives gate drive voltage; input capacitance (Ciss = 3450 pF) dominates turn-on timing and EMI generation. |
| 2 & 4 (DRAIN) | High-side power output | Electrically connected to metal tab; must be insulated from heatsink unless system ground reference permits direct mounting. |
| 3 (SOURCE) | Power return path | Common reference for gate drive and load current; internal source inductance (LS = 7.5 nH) affects di/dt during switching transitions. |
Key Features
| Feature | Design Value |
|---|---|
| Automotive qualification | AEC-Q101 qualified - verified for temperature cycling, humidity bias, and mechanical shock required in engine control modules and transmission ECUs. |
| Ultra-low RDS(on) | 6.5 mΩ max @ 10 V - reduces conduction losses by >30% vs. legacy 55 V MOSFETs, improving efficiency in 12 V/24 V battery-powered inverters. |
| Repetitive avalanche rating | Tested to 75 A IAR and 440 mJ EAR - enables reliable operation in unclamped inductive loads without snubber networks in fuel injector drivers. |
| Fast switching | 95 ns rise time / 67 ns fall time @ VDD = 28 V, ID = 66 A - supports PWM frequencies up to 100 kHz in BLDC motor gate drivers with minimal switching loss. |
| High-temperature operation | 175°C TJmax with normalized RDS(on) ≤ 2.5× nominal at 150°C - maintains stable on-resistance across full automotive temperature range. |
Applications
| Engine Control Unit (ECU) Fuel Injector Driver | Automotive DC-DC Converter Primary Switch |
|---|---|
Use Scenario: High-speed, high-current switching of 12 V fuel injectors in gasoline direct injection systems. IC Role / Device Role / Timing Role: Low-side N-channel switch controlling injector coil current with precise pulse-width modulation. Use Value: 75 A rating handles peak inrush currents; 6.5 mΩ RDS(on) minimizes self-heating during extended duty cycles; 175°C rating ensures reliability near hot engine blocks. | Use Scenario: Primary-side synchronous rectifier in 12 V to 5 V/3.3 V step-down converter for infotainment head units. IC Role / Device Role / Timing Role: High-efficiency power switch operating at 200–500 kHz PWM frequency in buck topology. Use Value: 3450 pF Ciss and 310 pF Crss enable clean gate drive with standard 1 A drivers; low Qg reduces gate drive power loss. |
| Electric Power Steering (EPS) Motor Phase Switch | Commercial Vehicle Starter Solenoid Interface |
Use Scenario: Half-bridge phase leg in 24 V EPS motor controllers requiring bidirectional current handling via body diode. IC Role / Device Role / Timing Role: N-channel high-side or low-side switch in three-phase inverter driving brushed or brushless assist motors. Use Value: 1.3 V VSD and 28–42 ns trr allow efficient freewheeling during PWM dead-time; 440 A pulsed source current supports regenerative braking peaks. | Use Scenario: High-current interface between vehicle battery and starter solenoid coil in heavy-duty trucks. IC Role / Device Role / Timing Role: Solid-state replacement for electromechanical relay, providing zero-bounce switching and programmable dwell time. Use Value: 110 mJ EAS withstands solenoid coil de-energization spikes; 0.90°C/W RθJC enables compact heatsink integration in space-constrained cab modules. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP75NF75 | 75 V VDSS, 8.5 mΩ RDS(on), TO-220 package, non-AEC-Q101 | Lacks automotive qualification; higher RDS(on) increases conduction loss in 12 V systems | Acceptable for industrial 24 V motor drives where AEC-Q101 is not mandated. |
| IXTH75N10L2 | 100 V VDSS, 10.5 mΩ RDS(on), TO-247 package, AEC-Q101 qualified | Higher voltage rating and larger package increase cost and board area; lower current density than IRF3205ZSTRL | Preferred only when system overvoltage transients exceed 60 V or layout allows TO-247 footprint. |
Compared with STP75NF75 and IXTH75N10L2, IRF3205ZSTRL delivers optimal balance of low on-resistance, automotive qualification, and TO-220AB thermal performance for 12–24 V automotive power switching - making it the most cost-effective and thermally efficient choice for ECU, EPS, and starter interface designs.
Availability
IRF3205ZSTRL is available at Aetrix Electronics and suitable for automotive engine control, electric power steering, and commercial vehicle starter interface applications requiring stable component supply and long-term lifecycle support.
Supply support for IRF3205ZSTRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global R&D and manufacturing infrastructure.
The HEXFET® Power MOSFET product line was developed specifically for high-reliability automotive and industrial power conversion, emphasizing low RDS(on), rugged avalanche capability, and AEC-Q101 compliance - exemplified by the IRF3205ZSTRL's 175°C operation and 75 A current handling.
FAQ
What is the maximum continuous drain current rating for IRF3205ZSTRL at 100°C case temperature?
The IRF3205ZSTRL supports 180 A continuous drain current at TC = 100°C when limited by silicon capability, as specified in the Absolute Maximum Ratings table. This value assumes proper heatsinking and gate drive at VGS = 10 V. In practice, thermal limits and PCB layout constrain real-world operation - always verify junction temperature using RθJC = 0.90°C/W and ambient conditions before final design validation of IRF3205ZSTRL.
Does IRF3205ZSTRL have a built-in body diode, and what are its key parameters?
Yes, IRF3205ZSTRL integrates a monolithic body diode with 1.3 V forward voltage at 66 A, 28–42 ns reverse recovery time (trr), and 25–38 nC reverse recovery charge (Qrr). These values are measured under VDD = 25 V, IF = 66 A, and di/dt = 100 A/µs. The diode enables freewheeling in inductive loads and synchronous rectification in buck converters without external components - a key feature confirmed in the "Source-Drain Ratings and Characteristics" section of the IRF3205ZSTRL datasheet.
Is IRF3205ZSTRL pin-compatible with other variants like IRF3205Z or IRF3205ZL?
No, IRF3205ZSTRL is not pin-compatible with IRF3205Z (TO-220AB), IRF3205ZS (D2Pak), or IRF3205ZL (TO-262). Although all share identical electrical specifications, they differ in package outline and lead configuration: IRF3205ZSTRL uses TO-220AB with isolated tab and 3-pin layout (Gate-Drain-Source), while IRF3205ZS uses D2Pak surface-mount footprint and IRF3205ZL uses TO-262 with different mounting hole spacing. PCB layout must match the exact package variant - IRF3205ZSTRL requires TO-220AB land pattern per JEDEC MS-001.
What gate drive voltage is recommended for reliable switching of IRF3205ZSTRL?
IRF3205ZSTRL is specified for full enhancement at VGS = 10 V, delivering guaranteed RDS(on) ≤ 6.5 mΩ. While its gate threshold voltage ranges from 2.0–4.0 V, operation below 8 V risks incomplete turn-on and excessive conduction loss. For automotive applications, a 10–12 V gate drive with <1 Ω series resistance is recommended to achieve the 18 ns turn-on delay and 45 ns turn-off delay shown in the switching characteristics. Always reference the "Electrical Characteristics" table and Figure 6 (Gate Charge vs. VGS) in the IRF3205ZSTRL datasheet for drive optimization.
How does the repetitive avalanche capability of IRF3205ZSTRL impact circuit protection design?
The IRF3205ZSTRL is rated for repetitive avalanche energy up to 440 mJ (EAR) and current up to 75 A (IAR), validated per Figures 15–16 and AN-1005. This allows elimination of external snubbers in inductive load switching (e.g., fuel injectors, solenoids) - provided junction temperature remains ≤175°C during each event. Designers must calculate allowable avalanche duty cycle using ZthJC(D,tav) from Figure 11 and ensure ∆TJ from avalanche pulses does not accumulate beyond thermal limits. This capability is intrinsic to IRF3205ZSTRL and does not require external circuitry.
IRF3205ZSTRL Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Discontinued at Digi-Key
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 6.5mOhm @ 66A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 110 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3450 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 170W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
IRF3205ZSTRL FAQ
1.How can I place an order for IRF3205ZSTRL through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF3205ZSTRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF3205ZSTRL reliable?
The price and inventory of IRF3205ZSTRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF3205ZSTRL is usually 5 days.
3.What payment methods are accepted for IRF3205ZSTRL?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF3205ZSTRL transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF3205ZSTRL?
IRF3205ZSTRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF3205ZSTRL order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF3205ZSTRL?
For technical support, including IRF3205ZSTRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF3205ZSTRL requirements.
6.How does Aetrix verify that IRF3205ZSTRL is sourced from the original manufacturer or authorized distributors?
All IRF3205ZSTRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF3205ZSTRL meets industry standards.
7.What is the process for return or replacement of IRF3205ZSTRL?
All IRF3205ZSTRL units undergo pre-shipment inspection (PSI). If there is an issue with IRF3205ZSTRL, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF3205ZSTRL part is unused and in its original packaging.
Return procedure for IRF3205ZSTRL:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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