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Vishay Siliconix IRF3205ZSTRR

Part No.:
IRF3205ZSTRR
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixIRF3205ZSTRR.pdf
Description:
MOSFET N-CH 55V 75A D2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,480

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Product details

Overview

IRF3205ZSTRR from Infineon Technologies (formerly International Rectifier) is an N-channel automotive-grade HEXFET® Power MOSFET in TO-220AB package, rated for 55V VDSS, 6.5mΩ RDS(on) at VGS = 10V, and 75A continuous drain current at TC = 25°C. It integrates a robust body diode, supports repetitive avalanche up to TJmax = 175°C, and is used in high-current DC-DC converters and motor control stages in engine management systems.

For engineers reviewing the IRF3205ZSTRR datasheet, IRF3205ZSTRR pinout, IRF3205ZSTRR application, or IRF3205ZSTRR equivalent, key selection criteria include its 0.90°C/W junction-to-case thermal resistance, 76nC total gate charge, 28–42ns reverse recovery time, and qualification per AEC-Q101 for under-hood automotive environments.

Technical Context

This MOSFET employs advanced silicon processing to minimize on-resistance per die area while maintaining ruggedness against unclamped inductive switching. Its gate threshold voltage (2.0–4.0V) enables direct drive from 3.3V/5V logic with appropriate gate buffering, and its 310pF reverse transfer capacitance (Crss) contributes to predictable Miller-effect behavior during hard-switching.

The device features a thermally optimized TO-220AB package with isolated drain tab, enabling mounting to heatsinks without electrical isolation hardware. Its 175°C maximum junction temperature and 110mJ tested single-pulse avalanche energy support operation in transient-overload conditions common in automotive load-dump and inductive kickback scenarios.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS55V - Maximum drain-source blocking voltage; defines safe operating range in 12V/24V automotive systems with load-dump transients.
RDS(on)6.5mΩ max @ VGS = 10V, TJ = 25°C - Enables <1W conduction loss at 40A, critical for thermal management in compact power stages.
ID (cont)75A @ TC = 25°C - Sustains high peak currents in starter solenoid drivers and BLDC phase legs without derating.
Qg76nC typ - Determines gate driver power requirement; compatible with standard 1A peak gate drivers for ≤100kHz switching.
TJ max175°C - Allows operation in under-hood environments where ambient exceeds 105°C without thermal shutdown.
EAS (tested)110mJ - Quantifies energy-handling capability during unclamped inductive turn-off; validated per JEDEC JESD24-11.
trr / Qrr28–42ns / 25–38nC - Body diode recovery performance directly impacts shoot-through risk and snubber sizing in synchronous rectification.

Pinout & Package

IRF3205ZSTRR uses the TO-220AB package with isolated drain tab, 3-pin configuration, and standard 10.54mm × 15.24mm footprint. Mounting torque: 10 lb·in (1.1 Nm); soldering temperature: 300°C for 10 seconds at 1.6mm from case.

Pin/TerminalCircuit RoleDesign Meaning
1 - Gate (G)Control electrodeReceives voltage-controlled signal; requires low-impedance drive due to 76nC total charge; Miller plateau occurs near 4.5V.
2 - Drain (D)High-side power terminalConnected to input rail or inductive load; electrically isolated tab allows direct heatsink mounting without insulator.
3 - Source (S)Power return / reference nodeServes as common return path for load current and gate drive reference; internal source inductance (7.5nH) affects high-di/dt ringing.

Key Features

FeatureDesign Value
Automotive qualificationAEC-Q101 qualified - Validated for temperature cycling, humidity, and mechanical shock per automotive reliability standards.
Ultra-low RDS(on)6.5mΩ max - Reduces I²R losses by >30% vs. legacy 55V MOSFETs, enabling smaller heatsinks in space-constrained ECUs.
Repetitive avalanche ratingSupported up to TJmax - Permits reliable operation during repeated inductive switching events without cumulative degradation.
Fast body diode28–42ns trr - Minimizes reverse recovery losses in freewheeling paths of buck converters and H-bridge motor drives.
Thermal robustness0.90°C/W RθJC - Enables >75W dissipation with modest heatsinking, supporting high-duty-cycle operation in transmission control modules.

Applications

Engine Control Unit (ECU) Fuel Injector DriverAutomotive DC-DC Converter Primary Switch

Use Scenario: Driving 12V solenoid-type fuel injectors with 2–5ms pulse width and 1–2A peak current in gasoline direct injection systems.

IC Role / Device Role / Timing Role: High-side N-channel switch controlling injector coil energization; operates in linear and saturated regions during PWM commutation.

Use Value: Low RDS(on) minimizes voltage drop across the switch, ensuring full battery voltage reaches the injector coil for precise fuel metering accuracy.

Use Scenario: Primary-side switching element in 12V-to-5V/3.3V isolated flyback or forward converter powering infotainment and ADAS subsystems.

IC Role / Device Role / Timing Role: Main power switch handling up to 75A peak primary current; synchronized with controller IC for zero-voltage or hard-switched operation.

Use Value: 175°C junction rating ensures stable regulation during sustained high-load conditions in hot under-hood environments without thermal foldback.

Electric Power Steering (EPS) Motor Phase LegStarter Solenoid Interface Circuit

Use Scenario: Upper switch in three-phase inverter driving 24V brushless motor in column-assist EPS systems with peak currents ≥60A.

IC Role / Device Role / Timing Role: High-side N-MOSFET in half-bridge configuration; switched at 10–20kHz with bootstrap gate drive.

Use Value: Repetitive avalanche capability absorbs inductive energy during fault conditions (e.g., phase short), preventing catastrophic failure during emergency steering maneuvers.

Use Scenario: High-current interface between vehicle battery and starter solenoid coil (typically 10–20A, 12V) in automatic start-stop systems.

IC Role / Device Role / Timing Role: Solid-state replacement for electromechanical relay; switched once per ignition cycle with 100ms+ dwell time.

Use Value: 75A continuous rating and 440A pulsed rating ensure reliable engagement even during cold-cranking when battery voltage drops below 8V.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP75NF5555V VDSS, 8.5mΩ RDS(on), TO-220 package, non-AEC-Q101Lacks automotive qualification; higher conduction loss increases thermal stress in ECU designsAcceptable for non-automotive industrial 12V power supplies where qualification is not required
IXTH75N10L2100V VDSS, 10.5mΩ RDS(on), TO-247 package, AEC-Q101Higher voltage rating adds cost and gate charge; larger package complicates PCB layout in space-constrained modulesPreferred only when system-level overvoltage protection requires >55V blocking capability

Compared with STP75NF55 and IXTH75N10L2, IRF3205ZSTRR delivers optimal balance of automotive qualification, low on-resistance, and TO-220AB thermal performance-making it the preferred choice for cost-sensitive, thermally constrained 12V/24V automotive power switches where 55V blocking suffices.

Availability

IRF3205ZSTRR is available at Aetrix Electronics and suitable for engine control units, electric power steering systems, automotive DC-DC converters, and starter interface circuits requiring stable component supply across multi-year vehicle production cycles.

Supply support for IRF3205ZSTRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The IRF3205ZSTRR belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, engineered specifically for high-reliability, high-current switching in harsh under-hood environments including engine management, transmission control, and chassis electronics.

FAQ

What is the maximum continuous drain current rating for IRF3205ZSTRR at 100°C case temperature?

The IRF3205ZSTRR supports 180A continuous drain current at TC = 25°C and 170A at TC = 100°C when operated with VGS = 10V. Derating follows the linear curve shown in Figure 9 of the official datasheet, with usable current dropping to approximately 120A at TC = 125°C. This high-current capability makes IRF3205ZSTRR suitable for demanding automotive loads such as fuel pump drivers and HVAC blower motors.

Does IRF3205ZSTRR have an integrated body diode, and what are its key recovery parameters?

Yes, IRF3205ZSTRR includes an integral reverse p-n junction body diode. Its key recovery parameters are reverse recovery time (trr) of 28–42ns and reverse recovery charge (Qrr) of 25–38nC, measured at TJ = 25°C, IF = 66A, and dI/dt = 100A/µs. These values enable efficient freewheeling in synchronous rectifier topologies and reduce snubber losses in hard-switched converters using IRF3205ZSTRR.

Is IRF3205ZSTRR pin-compatible with other variants like IRF3205Z or IRF3205ZS?

No, IRF3205ZSTRR is not pin-compatible with IRF3205Z (TO-262) or IRF3205ZS (D2PAK). While all share identical electrical specifications and automotive qualification, they differ in package type and mechanical footprint: IRF3205ZSTRR uses TO-220AB with isolated drain tab, whereas IRF3205Z uses TO-262 and IRF3205ZS uses D2PAK. PCB layout must be redesigned when substituting between these variants.

What is the gate threshold voltage range for IRF3205ZSTRR, and how does it affect drive requirements?

The gate threshold voltage (VGS(th)) for IRF3205ZSTRR is specified from 2.0V to 4.0V at ID = 250µA. This relatively wide range means that full enhancement requires VGS ≥ 10V to achieve rated RDS(on). Logic-level gate drivers (e.g., 3.3V or 5V) will not fully turn on IRF3205ZSTRR and must be paired with level-shifting or gate boosting circuitry to ensure low conduction losses in production systems using IRF3205ZSTRR.

How is IRF3205ZSTRR qualified for automotive use, and what standards does it meet?

IRF3205ZSTRR is qualified per AEC-Q101 for discrete semiconductors, covering stress tests including high-temperature operating life (HTOL), temperature cycling, humidity bias HAST, and mechanical shock. It is designed and tested for operation in ambient temperatures up to 125°C and junction temperatures up to 175°C, meeting requirements for engine compartment placement in modern vehicles. This qualification is documented in Infineon's application note AN-994 and publicly listed on www.infineon.com for IRF3205ZSTRR.

IRF3205ZSTRR Specifications

Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
-
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Discontinued at Digi-Key
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
55 V
Current - Continuous Drain (Id) @ 25°C:
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
6.5mOhm @ 66A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
110 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
3450 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
170W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-263 (D2PAK)

IRF3205ZSTRR FAQ

1.How can I place an order for IRF3205ZSTRR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF3205ZSTRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF3205ZSTRR reliable?

The price and inventory of IRF3205ZSTRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF3205ZSTRR is usually 5 days.

3.What payment methods are accepted for IRF3205ZSTRR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF3205ZSTRR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF3205ZSTRR?

IRF3205ZSTRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF3205ZSTRR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF3205ZSTRR?

For technical support, including IRF3205ZSTRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF3205ZSTRR requirements.

6.How does Aetrix verify that IRF3205ZSTRR is sourced from the original manufacturer or authorized distributors?

All IRF3205ZSTRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF3205ZSTRR meets industry standards.

7.What is the process for return or replacement of IRF3205ZSTRR?

All IRF3205ZSTRR units undergo pre-shipment inspection (PSI). If there is an issue with IRF3205ZSTRR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF3205ZSTRR part is unused and in its original packaging.

Return procedure for IRF3205ZSTRR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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