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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF3808PBF

Name: IRF3808PBF
Brand: Infineon Technologies
SKU: IRF3808PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF3808PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRF3808PBF.pdf

Description:: MOSFET N-CH 75V 140A TO220AB

Quantity:: RFQ Add To RFQ list

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Inventory:1,240

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Product details

Overview

IRF3808PBF from Infineon Technologies (formerly International Rectifier) is a 75V, 140A N-channel enhancement-mode HEXFET® Power MOSFET in TO-220AB package, featuring 7.0 mΩ R_DS(on) at V_GS = 10 V, 175°C maximum junction temperature, and 430 mJ single-pulse avalanche energy - designed for high-current DC-DC converters, motor drive half-bridges, and industrial power switching stages.

For engineers reviewing the IRF3808PBF datasheet, IRF3808PBF pinout, IRF3808PBF application, or IRF3808PBF equivalent, key selection criteria include its low R_DS(on), fast switching (t_r = 140 ns, t_f = 120 ns), robust repetitive avalanche rating up to T_jmax, thermal resistance R_θJC = 0.45°C/W, and body diode recovery performance (t_rr = 93–140 ns).

Technical Context

This MOSFET employs Advanced Planar Stripe processing to minimize on-resistance per silicon area while maintaining ruggedness. Its gate charge profile (Q_g = 150–220 nC, Q_gd = 50–76 nC) supports efficient hard-switching in synchronous buck and H-bridge topologies with moderate gate drive strength.

The device integrates a fast, low-V_SD (1.3 V @ 82 A) body diode with controlled reverse recovery (Q_rr = 340–510 nC, di/dt = 100 A/µs), enabling reliable operation in freewheeling and regenerative braking paths without external Schottky supplementation in many 48V-class systems.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	75 V - Maximum drain-source blocking voltage; suitable for 48V bus systems with 20% transient margin.
R_DS(on)	7.0 mΩ max @ V_GS = 10 V, I_D = 82 A - Enables <1.5 W conduction loss at 100 A continuous in heatsinked designs.
I_D @ T_C = 25°C	140 A - Continuous drain current rating under ideal case cooling; limited to 75 A by package thermal constraint.
E_AS	430 mJ - Single-pulse avalanche energy; allows unclamped inductive turn-off without failure under defined L·di/dt conditions.
t_r/t_f	140 ns / 120 ns - Rise/fall times at V_DD = 38 V, I_D = 82 A, R_G = 2.5 Ω; enables >100 kHz hard-switching with low switching loss.
R_θJC	0.45 °C/W - Junction-to-case thermal resistance; determines minimum heatsink requirement for 175°C T_j limit at full power.
Q_gd	76 nC max - Miller charge; directly impacts voltage-dependent switching delay and gate drive power in high-dV/dt applications.

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard three-terminal layout: Drain (D) on tab and lead 2, Source (S) on leads 1 and 3, Gate (G) on lead 1 (center pin). Mounting torque: 10 lbf·in (1.1 N·m); soldering temperature: 300°C for 10 s at 1.6 mm from case.

Pin/Terminal	Circuit Role	Design Meaning
Lead 1 (center)	Gate (G)	High-impedance control terminal; requires 10 V for full enhancement; gate leakage <200 nA at ±20 V.
Lead 2 (right)	Drain (D)	Main high-side current path; electrically connected to metal tab; must be insulated from heatsink unless referenced to system ground.
Leads 1 & 3 (left + center)	Source (S)	Power return node and gate reference; dual-source configuration reduces source inductance (L_S = 4.5–7.5 nH) for improved switching stability.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	7.0 mΩ max enables <1.5 W conduction loss at 100 A, reducing heatsink size and improving efficiency in 48V industrial supplies.
175°C rated junction temperature	Supports operation in sealed enclosures or high-ambient environments (e.g., motor drive cabinets) without derating below 100°C ambient.
Repetitive avalanche capability	Rated per Fig. 12a–12b and 15–16; allows safe operation during inductive load turn-off transients without snubber circuits in motor control.
Low R_θJC (0.45°C/W)	Enables direct mounting to aluminum heatsinks with thermal grease; achieves 175°C T_j at ~220 W dissipation with 25°C case temperature.
Fast body diode recovery	t_rr = 93–140 ns and Q_rr = 340–510 nC reduce switching losses and EMI in synchronous rectification and bidirectional power flow.

Applications

Industrial Motor Drive

48V DC-DC Converter

Use Scenario: Half-bridge inverter driving 3-phase BLDC motors in HVAC compressors and conveyor systems.

IC Role / Device Role / Timing Role: High-side and low-side switching element; handles 140 A peak phase current with 75 V bus rating.

Use Value: Low R_DS(on) and robust avalanche rating eliminate need for external clamping diodes during commutation transients.

Use Scenario: Primary-side switch in isolated 48V-to-12V flyback or active-clamp forward converter for telecom power shelves.

IC Role / Device Role / Timing Role: Main power switch operating at 100–200 kHz; withstands reflected output voltage spikes up to 75 V.

Use Value: Fast switching and low Q_gd reduce gate drive loss and improve duty cycle accuracy under high-frequency PWM control.

Uninterruptible Power Supply (UPS)

Electric Vehicle Onboard Charger (OBC) Input Stage

Use Scenario: Bidirectional DC link switch in double-conversion UPS inverters handling battery backup and grid synchronization.

IC Role / Device Role / Timing Role: Synchronous rectifier and power switch in LLC resonant half-bridge; conducts reverse current via body diode during dead time.

Use Value: Controlled t_rr and low V_SD minimize reverse recovery loss and thermal stress during zero-voltage switching transitions.

Use Scenario: AC-DC PFC boost switch in 3.3 kW OBC front-end, operating at 65–100 kHz with 400 V DC link.

IC Role / Device Role / Timing Role: High-current, high-reliability switch handling 140 A peak inductor current during boost cycles.

Use Value: 175°C T_j rating and low R_θJC allow sustained operation under high ambient temperatures inside vehicle cabin compartments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP140NF75	R_DS(on) = 7.5 mΩ (max), V_DSS = 75 V, Q_g = 160 nC - slightly higher on-resistance and gate charge.	Same TO-220 package; lower avalanche energy (320 mJ vs. 430 mJ) limits use in high-L·di/dt motor drives.	Preferred where cost sensitivity outweighs marginal conduction loss increase and avalanche margin is not critical.
IXTH120N10L2	V_DSS = 100 V, R_DS(on) = 6.2 mΩ (max), R_θJC = 0.35°C/W - higher voltage rating and better thermal performance but larger TO-247 package.	Requires PCB layout revision; superior for 72V battery systems or designs needing extended voltage headroom.	Select when future-proofing for 100 V bus or when thermal budget is tighter than mechanical footprint constraints.

Compared with STP140NF75 and IXTH120N10L2, the IRF3808PBF offers optimal balance of low R_DS(on), proven avalanche ruggedness, and TO-220 compatibility - making it preferred for cost-sensitive, space-constrained 48–75 V industrial switching where reliability under transient overload is mandatory.

Availability

IRF3808PBF is available at Aetrix Electronics and suitable for industrial motor drives, 48V DC-DC converters, and uninterruptible power supplies requiring stable component supply and long-term manufacturing continuity.

Supply support for IRF3808PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with deep expertise in silicon-based power devices and wide-bandgap technologies.

The IRF3808PBF belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability switching in industrial power conversion, motor control, and renewable energy systems.

FAQ

What is the maximum continuous drain current for IRF3808PBF at 100°C case temperature?

The IRF3808PBF supports 97 A continuous drain current at T_C = 100°C with V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This reflects thermal derating from the 140 A rating at 25°C, governed by the 2.2 W/°C linear derating factor and package limitations.

Does IRF3808PBF have lead-free construction and RoHS compliance?

Yes, the "PbF" suffix explicitly denotes lead-free (RoHS-compliant) construction. The device meets JEDEC J-STD-020 moisture sensitivity level (MSL) 1 and is qualified for reflow soldering at 300°C for 10 seconds at 1.6 mm from the case, per manufacturer specifications.

Can IRF3808PBF be used in synchronous rectification configurations?

Yes - its low R_DS(on) (7.0 mΩ), fast body diode (t_rr = 93–140 ns), and low Q_rr (340–510 nC) make it suitable for synchronous rectification in DC-DC converters up to ~200 kHz, provided gate drive timing avoids shoot-through and accounts for V_GS(th) variation (2.0–4.0 V).

What is the recommended gate resistor value for hard-switching at 150 kHz?

A gate resistor of 2.5 Ω is validated in the datasheet for switching characterization (t_r/t_f test). For 150 kHz hard-switching, 2.2–3.3 Ω balances switching speed (minimizing loss) and gate ringing suppression; ensure gate driver can source/sink ≥2 A peak to charge 220 nC Q_g within 100 ns.

IRF3808PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 75 V

Current - Continuous Drain (Id) @ 25°C:: 140A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 7mOhm @ 82A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 220 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5310 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 330W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRF3808PBF FAQ

1.How can I place an order for IRF3808PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF3808PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF3808PBF reliable?

The price and inventory of IRF3808PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF3808PBF is usually 5 days.

3.What payment methods are accepted for IRF3808PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF3808PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF3808PBF?

IRF3808PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF3808PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF3808PBF?

For technical support, including IRF3808PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF3808PBF requirements.

6.How does Aetrix verify that IRF3808PBF is sourced from the original manufacturer or authorized distributors?

All IRF3808PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF3808PBF meets industry standards.

7.What is the process for return or replacement of IRF3808PBF?

All IRF3808PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF3808PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF3808PBF part is unused and in its original packaging.

Return procedure for IRF3808PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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