Infineon Technologies IRF3808STRLPBF

Overview

IRF3808STRLPBF from Infineon Technologies is a 75 V, 106 A N-channel D2PAK (TO-263) HEXFET® Power MOSFET with R_DS(on) = 5.9 mΩ at V_GS = 10 V, 175°C maximum junction temperature, and 430 mJ single-pulse avalanche energy - designed for high-current DC-DC converters and motor drive half-bridges.

For engineers reviewing the IRF3808STRLPBF datasheet, IRF3808STRLPBF pinout, IRF3808STRLPBF application, or IRF3808STRLPBF equivalent, key selection criteria include its low R_DS(on), fast switching (t_r = 140 ns, t_f = 120 ns), robust repetitive avalanche rating up to T_jmax, and thermal resistance R_θJC = 0.75°C/W for high-power board-level thermal management.

Technical Context

This N-channel enhancement-mode MOSFET uses advanced planar stripe processing to minimize conduction loss while maintaining high dv/dt immunity (5.5 V/ns) and stable gate threshold (V_GS(th) = 2.0–4.0 V). Its body diode supports synchronous rectification with t_rr = 93–140 ns and Q_rr = 340–510 nC.

The device operates across –55°C to +175°C, features 150–220 nC total gate charge, and delivers 200 W power dissipation at T_C = 25°C with linear derating of 1.3 W/°C - enabling reliable use in industrial motor drives and high-efficiency SMPS where thermal margin and avalanche ruggedness are critical.

Key Specifications

Pinout & Package

IRF3808STRLPBF is housed in a surface-mount D2PAK (TO-263) package with exposed drain pad for thermal and electrical connection. The three terminals are arranged in standard S-D-G order (Source–Drain–Gate) on the bottom side, with Drain electrically and thermally tied to the large copper tab.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STL110N7F7AG and IXFH110N075T2, IRF3808STRLPBF offers the best balance of avalanche ruggedness, thermal performance, and proven field reliability in motor drive and industrial SMPS - especially where transient overvoltage and thermal cycling dominate failure modes.

Availability

IRF3808STRLPBF is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, and automotive DC-DC converters requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for IRF3808STRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon and wide-bandgap power devices.

The IRF3808STRLPBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability power conversion in industrial and transportation systems where thermal resilience and avalanche survival are mandatory.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRF3808STRLPBF supports 75 A continuous drain current at T_C = 100°C with V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This reflects thermal derating from 106 A at 25°C, governed by the 1.3 W/°C linear derating factor and R_θJC = 0.75°C/W. Operation at this current requires adequate PCB copper area and airflow to maintain case temperature.

Does IRF3808STRLPBF have a specified repetitive avalanche energy rating?

Yes - repetitive avalanche energy (E_AR) is documented in Figures 12a, 12b, 15, and 16 of the datasheet, with values dependent on pulse width, starting junction temperature, and duty cycle. At T_J = 25°C and single-pulse conditions, E_AR reaches 430 mJ; at 10% duty cycle and T_J = 150°C, it drops to ~200 mJ. Safe operation requires monitoring T_j ≤ 175°C.

Can IRF3808STRLPBF be used in synchronous rectification topologies?

Yes - its integrated body diode has V_SD = 1.3 V at I_S = 82 A and T_J = 25°C, with t_rr = 93–140 ns and Q_rr = 340–510 nC. These parameters support synchronous rectification in LLC and phase-shifted full-bridge converters up to 300 kHz, provided gate timing avoids shoot-through and accounts for diode recovery delay.

Is the D2PAK package of IRF3808STRLPBF compatible with standard reflow soldering processes?

Yes - the IRF3808STRLPBF is RoHS-compliant and rated MSL Level 1 per IPC-J-STD-020, meaning it can withstand standard Pb-free reflow profiles (peak 260°C for 10 seconds) without preconditioning. The D2PAK footprint requires a minimum 10 mm × 10 mm thermal pad with 8–12 vias (0.3 mm diameter) to ensure mechanical integrity and thermal performance.