Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF510

Name: IRF510
Brand: Vishay Siliconix
SKU: IRF510
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRF510

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRF510.pdf

Description:: MOSFET N-CH 100V 5.6A TO220AB

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:4,208

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRF510 from Vishay Siliconix is a 100 V, 5.6 A N-channel power MOSFET in TO-220AB package, featuring 0.54 Ω R_DS(on) at V_GS = 10 V, 8.3 nC total gate charge, and 175 °C maximum junction temperature. It serves as a main switching device in DC-DC converters, motor drives, and linear regulators requiring rugged avalanche capability and fast switching.

For engineers reviewing the IRF510 datasheet, IRF510 pinout, IRF510 application, or IRF510 equivalent, key selection criteria include its repetitive avalanche rating (E_AS = 75 mJ), dV/dt immunity (5.5 V/ns), and thermal resistance (R_thJC = 3.5 °C/W), critical for high-reliability industrial power stages.

Technical Context

The IRF510 uses a third-generation planar vertical DMOS structure optimized for low conduction loss and robust unclamped inductive switching. Its gate threshold voltage (2.0–4.0 V) enables standard 10 V logic-level drive, while dynamic parameters-including C_iss = 180 pF, C_oss = 81 pF, and Q_gd/Q_gs ratio of 1.65-support predictable turn-on/turn-off timing in hard-switched topologies.

Thermal design is anchored by a low junction-to-case resistance (3.5 °C/W) and 43 W maximum power dissipation at T_C = 25 °C. The integrated body diode exhibits t_rr = 100–200 ns and Q_rr = 0.44–0.88 μC, making it suitable for freewheeling in non-synchronous buck or flyback converters where reverse recovery behavior must be managed.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum blocking voltage before avalanche onset; defines use in ≤100 V DC bus systems
R_DS(on)	0.54 Ω @ V_GS = 10 V - Determines I²R conduction loss; yields ≤10.4 W loss at 4.5 A continuous drain current
Q_g	8.3 nC - Total gate charge required for full enhancement; sets minimum driver current and switching loss budget
I_D (continuous)	5.6 A @ T_C = 25 °C - Continuous safe operating current with heatsink; derates to 4.0 A at 100 °C case temperature
E_AS	75 mJ - Single-pulse avalanche energy rating; enables reliable operation under inductive load turn-off stress
T_J max	+175 °C - Maximum junction temperature; supports high ambient environments without thermal shutdown

Pinout & Package

IRF510 is housed in a TO-220AB package with insulated tab, featuring three leads: Gate (G), Drain (D), and Source (S). The metal tab is electrically connected to the Drain terminal and must be isolated from heatsink unless circuit topology permits common-drain mounting.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate control input	Receives voltage-controlled signal to modulate channel conductivity; requires < ±20 V absolute limit and ≤100 nA leakage
D	Drain power terminal	High-side switching node; connects to load or bus; electrically tied to metal tab and must be insulated if mounted to grounded heatsink
S	Source return path	Reference node for gate drive and current sensing; carries full load current and forms source of internal body diode

Key Features

Feature	Design Value
Repetitive avalanche rated	Rated for repeated unclamped inductive switching up to I_AR = 5.6 A and E_AR = 4.3 mJ - eliminates need for external snubbers in relay/motor drive flyback paths
Dynamic dV/dt immunity	5.5 V/ns - prevents false turn-on during high dv/dt transients in bridge-leg or high-side configurations
Fast switching	td(on) = 6.9 ns, tr = 16 ns, td(off) = 15 ns, tf = 9.4 ns - enables >100 kHz operation with minimal overlap loss in SMPS
Low R_thJC	3.5 °C/W - allows compact heatsinking; achieves 43 W dissipation with ≤150 °C ΔT between junction and case
RoHS-compliant Pb-free	IRF510PbF-BE3 variant meets lead-free and halogen-free requirements per JEDEC J-STD-609 - suitable for automotive and industrial compliance programs

Applications

Switch-Mode Power Supply	DC Motor Drive
Use Scenario: Primary-side switch in 24–48 V input offline flyback or forward converter delivering up to 60 W. IC Role / Device Role / Timing Role: Main power switch controlling energy transfer via duty-cycle-modulated PWM; operates at 60–100 kHz with zero-voltage switching assist. Use Value: 0.54 Ω R_DS(on) minimizes conduction loss at 5 A peak, while 75 mJ E_AS absorbs leakage inductance spikes without clamping diodes.	Use Scenario: H-bridge half-bridge leg driving brushed DC motors in industrial actuators or HVAC dampers. IC Role / Device Role / Timing Role: Low-side or high-side switching element enabling bidirectional current flow; driven by isolated gate driver with 10 V logic interface. Use Value: 5.6 A continuous rating and 175 °C T_J support sustained stall currents; body diode t_rr < 200 ns reduces shoot-through risk during commutation.
Linear Regulator Pass Element	LED Constant-Current Driver
Use Scenario: Series pass transistor in high-stability 5–12 V linear regulator powering analog sensor front-ends. IC Role / Device Role / Timing Role: Voltage-controlled current source dissipating excess power as heat; biased in linear region with feedback loop controlling V_GS. Use Value: Low gate charge (8.3 nC) and simple drive reduce control loop complexity; 3.5 °C/W R_thJC enables stable thermal regulation with passive heatsink.	Use Scenario: Constant-current switch in dimmable LED driver for architectural lighting with 36 V string voltage. IC Role / Device Role / Timing Role: PWM-controlled current sink regulating average LED current; switched at 1–5 kHz to avoid audible noise. Use Value: 100 V V_DS safely handles LED string open-circuit transients; 5.5 V/ns dV/dt immunity prevents false triggering during PWM edge transitions.

Switch-Mode Power Supply

DC Motor Drive

Use Scenario: Primary-side switch in 24–48 V input offline flyback or forward converter delivering up to 60 W.

IC Role / Device Role / Timing Role: Main power switch controlling energy transfer via duty-cycle-modulated PWM; operates at 60–100 kHz with zero-voltage switching assist.

Use Value: 0.54 Ω R_DS(on) minimizes conduction loss at 5 A peak, while 75 mJ E_AS absorbs leakage inductance spikes without clamping diodes.

Use Scenario: H-bridge half-bridge leg driving brushed DC motors in industrial actuators or HVAC dampers.

IC Role / Device Role / Timing Role: Low-side or high-side switching element enabling bidirectional current flow; driven by isolated gate driver with 10 V logic interface.

Use Value: 5.6 A continuous rating and 175 °C T_J support sustained stall currents; body diode t_rr < 200 ns reduces shoot-through risk during commutation.

Linear Regulator Pass Element

LED Constant-Current Driver

Use Scenario: Series pass transistor in high-stability 5–12 V linear regulator powering analog sensor front-ends.

IC Role / Device Role / Timing Role: Voltage-controlled current source dissipating excess power as heat; biased in linear region with feedback loop controlling V_GS.

Use Value: Low gate charge (8.3 nC) and simple drive reduce control loop complexity; 3.5 °C/W R_thJC enables stable thermal regulation with passive heatsink.

Use Scenario: Constant-current switch in dimmable LED driver for architectural lighting with 36 V string voltage.

IC Role / Device Role / Timing Role: PWM-controlled current sink regulating average LED current; switched at 1–5 kHz to avoid audible noise.

Use Value: 100 V V_DS safely handles LED string open-circuit transients; 5.5 V/ns dV/dt immunity prevents false triggering during PWM edge transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP55NF06L	60 V V_DS, 55 A I_D, 0.014 Ω R_DS(on), logic-level (1.7–2.5 V V_GS(th))	Higher current, lower voltage rating; requires 5 V gate drive instead of 10 V	Choose for high-current, low-voltage (<60 V) applications needing logic-level compatibility and lower R_DS(on)
IRFZ44N	55 V V_DS, 49 A I_D, 0.028 Ω R_DS(on), same TO-220AB package	Lower voltage rating but higher current and lower on-resistance; not avalanche-rated	Choose for cost-sensitive 48 V systems where avalanche robustness is not required and layout accommodates higher peak currents

Compared with STP55NF06L and IRFZ44N, the IRF510 offers unique 100 V blocking and certified repetitive avalanche capability-critical for 48–100 V industrial power supplies exposed to inductive kickback-while maintaining proven thermal reliability in TO-220AB with minimal drive complexity.

Availability

IRF510 is available at Aetrix Electronics and suitable for switch-mode power supplies, DC motor drives, linear regulators, and LED constant-current drivers requiring stable component supply across industrial OEM production cycles.

Supply support for IRF510 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, thermal performance, and reliability for industrial and automotive markets.

The IRF510 belongs to Vishay's third-generation power MOSFET family engineered for optimal balance of low R_DS(on), fast switching, and avalanche survivability in commercial-industrial power conversion and motor control.

FAQ

What is the maximum continuous drain current rating for the IRF510 at 100 °C case temperature?

The IRF510 has a maximum continuous drain current of 4.0 A when the case temperature is 100 °C. This derating reflects thermal limits imposed by its 3.5 °C/W junction-to-case thermal resistance and 175 °C maximum junction temperature. At 25 °C case temperature, the rating increases to 5.6 A. Designers must verify heatsink performance to maintain safe junction temperatures under full-load conditions for the IRF510.

Does the IRF510 have an integrated body diode, and what are its key recovery characteristics?

Yes, the IRF510 includes an integral body diode formed by the MOSFET's p-n junction. Its reverse recovery time (t_rr) is 100–200 ns at T_J = 25 °C, IF = 5.6 A, and dI/dt = 100 A/μs, with reverse recovery charge (Q_rr) ranging from 0.44 to 0.88 μC. These values are critical for designing snubberless flyback or synchronous rectifier circuits where diode recovery impacts efficiency and EMI for the IRF510.

Is the IRF510 suitable for avalanche-prone applications such as relay coil suppression or inductive load switching?

Yes, the IRF510 is explicitly rated for repetitive avalanche operation with I_AR = 5.6 A and E_AR = 4.3 mJ, and single-pulse avalanche energy of 75 mJ. This makes it suitable for relay coil suppression, solenoid drivers, and other inductive load switching where voltage spikes exceed V_DS. Its ruggedized device design ensures reliable energy absorption without degradation, a verified capability documented in Vishay's S21-0819 datasheet for the IRF510.

What gate drive voltage is required to fully enhance the IRF510, and how does its threshold compare to logic-level MOSFETs?

The IRF510 requires a minimum gate-source voltage of 10 V to achieve its specified R_DS(on) of 0.54 Ω. Its gate threshold voltage (V_GS(th)) ranges from 2.0 V to 4.0 V, meaning it begins conducting around 2.5 V but is not fully enhanced until ≥10 V. Unlike logic-level MOSFETs (e.g., those with V_GS(th) < 2.0 V), the IRF510 needs a dedicated 10 V gate driver-not 3.3 V or 5 V microcontroller outputs-making proper drive design essential for the IRF510.

What is the thermal resistance from junction to ambient for the IRF510, and how does that affect heatsink selection?

The IRF510 has a maximum junction-to-ambient thermal resistance (R_thJA) of 62 °C/W with no heatsink. When mounted on a standard TO-220 heatsink, thermal performance depends heavily on interface quality and airflow. For reliable operation at full 5.6 A, a heatsink must keep case temperature ≤100 °C, requiring total system R_thJA < 30 °C/W. Since R_thJC = 3.5 °C/W, heatsink + interface resistance must be ≤26.5 °C/W-guiding mechanical design for the IRF510.

IRF510 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 5.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 540mOhm @ 3.4A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 8.3 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 180 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 43W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRF510 FAQ

1.How can I place an order for IRF510 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF510 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF510 reliable?

The price and inventory of IRF510 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF510 is usually 5 days.

3.What payment methods are accepted for IRF510?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF510 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF510?

IRF510 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF510 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF510?

For technical support, including IRF510 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF510 requirements.

6.How does Aetrix verify that IRF510 is sourced from the original manufacturer or authorized distributors?

All IRF510 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF510 meets industry standards.

7.What is the process for return or replacement of IRF510?

All IRF510 units undergo pre-shipment inspection (PSI). If there is an issue with IRF510, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF510 part is unused and in its original packaging.

Return procedure for IRF510:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …