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Vishay Siliconix IRF510STRLPBF
- Part No.:
- IRF510STRLPBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRF510STRLPBF.pdf
- Description:
- MOSFET N-CH 100V 5.6A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:250
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Product details
Overview
IRF510STRLPBF from Vishay Siliconix is a surface-mount N-channel enhancement-mode power MOSFET in D2PAK (TO-263) package, rated for 100 V drain-source voltage, 5.6 A continuous drain current at 25 °C, and 0.54 Ω RDS(on) at VGS = 10 V. It delivers fast switching, repetitive avalanche capability, and 175 °C junction operation-used in DC-DC converters, motor control stages, and industrial power supplies.
For engineers reviewing the IRF510STRLPBF datasheet, IRF510STRLPBF pinout, IRF510STRLPBF application, or IRF510STRLPBF equivalent, key selection criteria include its 8.3 nC total gate charge, 5.5 V/ns peak diode recovery dv/dt rating, 75 mJ single-pulse avalanche energy, and PCB-mount thermal resistance of 40 °C/W-critical for high-reliability mid-power switching designs.
Technical Context
This MOSFET employs planar silicon technology with optimized die layout for low RDS(on) and controlled gate charge distribution. Its dynamic dv/dt rating and unclamped inductive switching (UIS) capability support robust operation in hard-switched topologies without external snubbers.
The device integrates an intrinsic body diode with 100–200 ns reverse recovery time and 0.44–0.88 μC Qrr, enabling synchronous rectification and freewheeling in buck and flyback converters where diode conduction is unavoidable.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - Supports input rails up to 80 V DC with margin for transients in industrial and telecom power systems. |
| RDS(on) @ VGS = 10 V | 0.54 Ω - Enables <1.0 W conduction loss at 3.4 A, suitable for medium-current switch-mode applications. |
| Qg | 8.3 nC - Determines gate drive power and switching speed; compatible with standard 1-A peak gate drivers. |
| ID (continuous, TC = 25 °C) | 5.6 A - Delivers >25 W output in TO-263 surface-mount configuration without forced air cooling. |
| EAS | 75 mJ - Withstands unclamped inductive energy spikes in relay driving or solenoid control without failure. |
| TJ max | 175 °C - Allows operation in sealed enclosures or high-ambient environments like motor drives and LED drivers. |
| PD (TC = 25 °C) | 43 W - Reflects package thermal performance when mounted on heatsink; enables high-duty-cycle operation. |
Pinout & Package
D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection. Dimensions per JEDEC outline: 10.67 mm × 9.65 mm × 4.83 mm (L × W × H), 3-pin configuration (G-D-S), lead (Pb)-free and halogen-free construction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control terminal | Receives 10 V logic-level signal to fully enhance channel; 2.3 nC Qgs ensures rapid turn-on with minimal drive loss. |
| D (Drain) | High-side power output | Connected to exposed copper pad on underside; carries full load current and dissipates heat directly to PCB copper pour or heatsink. |
| S (Source) | Power return / reference node | Provides low-inductance source path; internal 7.5 nH source inductance impacts high-speed switching ringing and layout sensitivity. |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | Enables reliable operation under transient overloads (e.g., inductive kickback) without derating or external protection. |
| Dynamic dv/dt immunity | 5.5 V/ns rating prevents false turn-on during high-slew-rate voltage transitions in half-bridge configurations. |
| Fast switching | 6.9 ns turn-on delay + 16 ns rise time supports >500 kHz PWM frequencies in compact power supplies. |
| 175 °C operating temperature | Permits use in thermally constrained spaces such as enclosed LED drivers or automotive under-hood modules. |
| Surface-mount D2PAK package | Offers 2.0 W typical PCB-mount power dissipation and compatibility with automated SMT assembly lines. |
Applications
| DC-DC Buck Converter | Brushed DC Motor Driver |
|---|---|
Use Scenario: Step-down regulation from 24–48 V bus to 5–12 V for embedded controllers and sensors. IC Role / Device Role / Timing Role: High-side synchronous switch controlling duty cycle and current flow into output inductor. Use Value: 0.54 Ω RDS(on) minimizes conduction loss at 3–5 A loads; 8.3 nC Qg enables efficient 300–600 kHz switching with low gate drive loss. |
Use Scenario: H-bridge or half-bridge control of 12–36 V brushed motors in robotics and industrial actuators. IC Role / Device Role / Timing Role: Low-side or high-side power switch handling bidirectional current and regenerative braking energy. Use Value: 75 mJ EAS withstands inductive flyback during PWM commutation; 175 °C rating sustains intermittent stall conditions. |
| LED Constant-Current Driver | Industrial Power Supply OR-ing |
Use Scenario: Constant-current dimming of high-brightness LED strings in signage and architectural lighting. IC Role / Device Role / Timing Role: Series-pass switch modulated via analog or PWM input to regulate LED current. Use Value: Low RDS(on) reduces thermal burden in linear or quasi-linear dimming modes; 5.6 A rating supports multi-string parallel operation. |
Use Scenario: Redundant 24–48 V DC inputs in programmable logic controller (PLC) backplanes and distributed power architectures. IC Role / Device Role / Timing Role: Ideal diode replacement for reverse-polarity and fault-isolation protection. Use Value: Body diode forward voltage ≤2.5 V at 5.6 A allows low-loss forward conduction; fast trr (100 ns typ.) limits reverse recovery losses during switchover. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP55NF06L | 60 V VDS, 55 A ID, 0.014 Ω RDS(on), TO-220 package | Higher current, lower voltage rating; through-hole mounting only | Select for higher-current, lower-voltage (<60 V) applications where PCB space permits larger package and thermal mass. |
| IRFZ44NPBF | 55 V VDS, 49 A ID, 0.028 Ω RDS(on), TO-220 package | Lower voltage rating, higher current, same logic-level gate drive | Choose when designing for 12–24 V systems requiring higher peak current and lower conduction loss, accepting through-hole assembly. |
Compared with STP55NF06L and IRFZ44NPBF, the IRF510STRLPBF offers superior voltage headroom (100 V) and surface-mount compatibility in D2PAK, making it optimal for space-constrained 24–48 V industrial power stages where avalanche ruggedness and thermal management on PCB are critical.
Availability
IRF510STRLPBF is available at Aetrix Electronics and suitable for DC-DC converters, motor control circuits, and LED driver modules requiring stable component supply across extended production lifecycles.
Supply support for IRF510STRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The IRF510STRLPBF belongs to Vishay's third-generation power MOSFET family, engineered for ruggedized switching, fast transition times, and cost-effective performance in mid-power surface-mount applications.
FAQ
What is the maximum continuous drain current for IRF510STRLPBF at 100 °C case temperature?
The IRF510STRLPBF supports 4.0 A continuous drain current at TC = 100 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package under sustained high-temperature operation and must be verified against actual board layout and copper area in the final design. The IRF510STRLPBF maintains safe operation within its SOA curve up to this current level when properly heatsinked.
Does IRF510STRLPBF require a gate resistor for stable switching?
Yes, IRF510STRLPBF benefits from an external gate resistor (typically 10–25 Ω) to dampen ringing caused by its 7.5 nH internal source inductance and 4.5 nH drain inductance. The datasheet specifies switching times using Rg = 24 Ω, confirming that uncontrolled gate drive can induce oscillation and increase EMI. Proper gate resistor selection for IRF510STRLPBF balances switching speed against voltage overshoot and EMI compliance.
Is IRF510STRLPBF RoHS-compliant and halogen-free?
Yes, IRF510STRLPBF is lead (Pb)-free and halogen-free, meeting RoHS Directive 2011/65/EU and Vishay's material categorization per document 99912. The "PbF" suffix explicitly denotes Pb-free termination, and the device uses matte tin plating on leads. Full compliance documentation, including test reports and substance declarations, is available upon request for IRF510STRLPBF.
Can IRF510STRLPBF replace IRF510PBF in existing designs?
No-IRF510STRLPBF is not a drop-in replacement for through-hole IRF510PBF due to fundamental package differences: IRF510STRLPBF uses surface-mount D2PAK (TO-263), while IRF510PBF uses through-hole TO-220. Pinout, thermal path, and PCB footprint are incompatible. However, IRF510STRLPBF may serve as a functional alternative in new designs prioritizing SMT assembly, higher thermal performance on PCB, and improved avalanche ruggedness.
What is the typical body diode reverse recovery charge (Qrr) for IRF510STRLPBF?
The typical body diode reverse recovery charge (Qrr) for IRF510STRLPBF is 0.44 μC, with a maximum of 0.88 μC, measured at TJ = 25 °C, IF = 5.6 A, and di/dt = 100 A/μs. This parameter directly impacts switching loss during freewheeling and must be accounted for in efficiency calculations for buck, flyback, and synchronous rectifier topologies using IRF510STRLPBF.
IRF510STRLPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 5.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 540mOhm @ 3.4A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 8.3 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 180 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 43W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
IRF510STRLPBF FAQ
1.How can I place an order for IRF510STRLPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF510STRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF510STRLPBF reliable?
The price and inventory of IRF510STRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF510STRLPBF is usually 5 days.
3.What payment methods are accepted for IRF510STRLPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF510STRLPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF510STRLPBF?
IRF510STRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF510STRLPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF510STRLPBF?
For technical support, including IRF510STRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF510STRLPBF requirements.
6.How does Aetrix verify that IRF510STRLPBF is sourced from the original manufacturer or authorized distributors?
All IRF510STRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF510STRLPBF meets industry standards.
7.What is the process for return or replacement of IRF510STRLPBF?
All IRF510STRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF510STRLPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF510STRLPBF part is unused and in its original packaging.
Return procedure for IRF510STRLPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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