Vishay Siliconix IRF520

Overview

IRF520 from Vishay Siliconix is a 100 V, 9.2 A N-channel power MOSFET in TO-220AB package, featuring 0.27 Ω R_DS(on) at V_GS = 10 V, logic-level gate drive compatibility, and repetitive avalanche rating. It serves as a robust switching element in DC-DC converters, motor drivers, and power supplies up to 50 W dissipation.

For engineers reviewing the IRF520 datasheet, IRF520 pinout, IRF520 application, or IRF520 equivalent, key selection criteria include its 100 V V_DS, 9.2 A continuous drain current at T_C = 25 °C, 0.27 Ω on-resistance, fast switching performance (t_d(on) = 10 ns, t_f = 25 ns), and TO-220AB thermal interface suitability for industrial heat-sink mounting.

Technical Context

The IRF520 employs a planar vertical DMOS structure optimized for high-voltage switching with low conduction loss and controlled dV/dt immunity. Its gate threshold voltage (2.0–4.0 V) enables direct drive from microcontrollers and logic ICs without level-shifting circuitry.

Designed for hard-switched topologies, it supports unclamped inductive switching with 200 mJ single-pulse avalanche energy and exhibits low output capacitance (C_oss = 150 pF at V_DS = 25 V) to minimize switching losses in PWM applications.

Key Specifications

Pinout & Package

IRF520 uses the industry-standard TO-220AB package with isolated tab (drain-connected), enabling direct mechanical mounting to heatsinks without insulating hardware. Thermal resistance from junction to case is 2.5 °C/W, and case-to-sink resistance is 0.50 °C/W with greased flat surface contact.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP10NK50ZFP and FQP30N06L, the IRF520 occupies a mid-voltage niche: it delivers optimal balance of 100 V capability, 9.2 A current, and 0.27 Ω on-resistance for industrial 24–48 V power switching where higher-voltage or ultra-low-R_DS(on) trade-offs are unnecessary.

Availability

IRF520 is available at Aetrix Electronics and suitable for DC motor control, switching power supply design, LED lighting drivers, and industrial relay/solenoid drivers requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRF520 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and thermal performance.

The IRF520 belongs to Vishay's legacy "IRF" power MOSFET family, engineered for general-purpose industrial switching applications demanding proven avalanche capability, ease of drive, and TO-220 thermal scalability.

FAQ

What is the maximum continuous drain current for IRF520 at 100 °C case temperature?

The IRF520 supports 5.5 A continuous drain current at T_C = 100 °C, derived from its 9.2 A rating at 25 °C and linear derating factor of 0.067 A/°C. This value ensures safe operation in enclosed enclosures or high-ambient environments where heatsink temperature reaches 100 °C. Designers must verify junction temperature using R_thJC = 2.5 °C/W and actual power dissipation in the IRF520 to remain within 150 °C limit.

Does IRF520 support logic-level gate drive from 3.3 V microcontrollers?

The IRF520 has a gate threshold voltage range of 2.0–4.0 V, meaning some units may partially enhance at 3.3 V but will not achieve full R_DS(on) specification. At V_GS = 3.3 V, R_DS(on) degrades significantly (typically >1.2 Ω), increasing conduction loss. For reliable logic-level operation, IRF520 requires ≥4.5 V gate drive; the IRL520 (logic-level variant) is recommended for true 3.3 V MCU compatibility. The IRF520 datasheet explicitly specifies R_DS(on) only at V_GS = 10 V.

Can IRF520 be used in parallel configurations?

Yes, the IRF520 supports paralleling due to its positive temperature coefficient of R_DS(on), which promotes current sharing as temperature rises. Successful implementation requires matched gate resistors (≤1 Ω), symmetrical PCB layout, and shared heatsinking to minimize thermal gradients. The IRF520's low gate charge (34 nC) and uniform transconductance reduce dynamic imbalance. However, gate drive strength must scale with total Q_g; for two IRF520 devices, peak gate current should exceed 3.5 A to maintain <20 ns rise time.

What is the body diode reverse recovery time (t_rr) of IRF520?

The IRF520 body diode exhibits t_rr = 130–200 ns at T_J = 25 °C, I_F = 9.2 A, and dI/dt = 100 A/μs. This relatively slow recovery necessitates careful attention in synchronous rectification or bidirectional switching circuits. In half-bridge configurations, dead time must exceed 300 ns to prevent shoot-through. The body diode's soft recovery characteristic minimizes voltage overshoot, but external Schottky diodes are recommended for high-frequency (>50 kHz) freewheeling paths to reduce losses.

Is IRF520 RoHS-compliant and halogen-free?

Yes, the IRF520PbF variant is RoHS-compliant and lead-free, with matte tin-plated leads per JEDEC J-STD-020. The IRF520PbF-BE3 version adds halogen-free qualification (per IEC 61249-2-21), with bromine < 900 ppm and chlorine < 900 ppm. Both variants meet Vishay's material categorization standard (document 99912) and carry no exemptions. Standard IRF520 (non-PbF) contains lead terminations and is not RoHS-compliant.