My Inquiry
My Account
Vishay Siliconix IRF520SPBF
- Part No.:
- IRF520SPBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRF520SPBF.pdf
- Description:
- MOSFET N-CH 100V 9.2A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:17
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IRF520SPBF from Vishay Siliconix is a surface-mount N-channel enhancement-mode Power MOSFET in D2PAK (TO-263) package, rated for 100 V drain-source voltage, 9.2 A continuous drain current at 25 °C, and 0.27 Ω RDS(on) at VGS = 10 V. It delivers fast switching, repetitive avalanche capability, and 175 °C operating junction temperature - used in DC-DC converters, motor drivers, and power supply output stages.
For engineers reviewing the IRF520SPBF datasheet, IRF520SPBF pinout, IRF520SPBF application, or IRF520SPBF equivalent, key selection criteria include its 100 V rating, 9.2 A thermal-limited current, 16 nC total gate charge, D2PAK thermal performance (RthJC = 2.5 °C/W), and body diode recovery time (trr = 110–260 ns).
Technical Context
This MOSFET employs third-generation silicon process optimized for low RDS(on) and rugged unclamped inductive switching. Its dynamic dV/dt rating of 5.5 V/ns supports reliable operation in noisy high-speed switching environments, while the integrated body diode enables synchronous rectification and freewheeling in buck and half-bridge topologies.
The device features a hexagonal die layout in D2PAK package with low-inductance internal source (LS = 7.5 nH) and drain (LD = 4.5 nH) paths, enabling stable paralleling and minimizing switching oscillation. Repetitive avalanche energy rating (EAR = 6.0 mJ) confirms robustness under transient overvoltage conditions without external snubbers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - Supports input rails up to 80 V DC with margin for transients in industrial and automotive power supplies. |
| RDS(on) @ VGS = 10 V | 0.27 Ω - Enables <1.4 W conduction loss at 7 A, suitable for medium-power switch-mode applications. |
| ID (continuous, TC = 25 °C) | 9.2 A - Requires heatsinking or PCB copper area for sustained operation above 6.5 A at 100 °C case temperature. |
| Qg | 16 nC - Determines gate drive power requirement; compatible with standard 1-A peak gate drivers at ≤100 kHz. |
| trr (body diode) | 110–260 ns - Limits reverse recovery losses in hard-switched topologies; impacts EMI and efficiency in flyback/freewheeling use. |
| EAS | 200 mJ - Withstands single-pulse inductive energy events (e.g., motor stall, solenoid de-energization) without failure. |
| RthJC | 2.5 °C/W - Enables 60 W power dissipation with modest heatsink; critical for thermal design in compact D2PAK layouts. |
Pinout & Package
D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection. Standard 3-lead configuration: Gate (G), Drain (D), Source (S). Package dimensions per JEDEC TO-263AB outline; recommended minimum PCB pad: 10.67 mm × 9.02 mm (420 mil × 355 mil) for thermal relief.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control terminal | Receives 10 V logic-level drive; threshold voltage 2.0–4.0 V ensures compatibility with microcontroller GPIOs and dedicated gate drivers. |
| D (Drain) | High-side power output | Connected to load or bus rail; electrically and thermally tied to large copper pour via exposed backside metal pad. |
| S (Source) | Reference/return path | Serves as local ground reference for gate drive; must be routed with low inductance to minimize switching overshoot and ringing. |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | Enables reliable operation under inductive load switching without external protection components; EAR = 6.0 mJ. |
| Dynamic dV/dt rating | 5.5 V/ns immunity prevents false turn-on during high-slew-rate voltage transients in motor drives and SMPS. |
| Fast switching | Turn-on delay 8.8 ns + rise time 30 ns; fall time 20 ns - reduces switching losses below 200 kHz operation. |
| 175 °C operating temperature | Supports extended ambient operation in sealed enclosures or high-temperature industrial environments without derating. |
| Halogen-free construction | Complies with IEC 61249-2-21; meets environmental requirements for RoHS-compliant industrial and consumer end equipment. |
Applications
| DC-DC Buck Converter | Brushed DC Motor Driver |
|---|---|
|
Use Scenario: Step-down regulation from 24 V or 48 V battery to 5–12 V logic rails in industrial controllers. IC Role / Device Role / Timing Role: High-side synchronous switch in fixed-frequency PWM topology; handles 5–10 A load current. Use Value: Low RDS(on) minimizes conduction loss; fast switching and low Qg reduce driver complexity and improve efficiency above 90%. |
Use Scenario: H-bridge or half-bridge control of 12–24 V brushed motors in robotics, actuators, and HVAC dampers. IC Role / Device Role / Timing Role: Low-side or high-side power switch; operates with PWM frequencies up to 50 kHz. Use Value: Repetitive avalanche rating absorbs inductive kickback during direction reversal; 175 °C rating sustains duty cycles in enclosed chassis. |
| AC-DC Auxiliary Supply | LED Constant-Current Driver |
|
Use Scenario: Secondary-side synchronous rectifier or primary-side switch in offline flyback adapters (≤30 W). IC Role / Device Role / Timing Role: Primary switch in discontinuous conduction mode (DCM); withstands 100 V reflected voltage. Use Value: Body diode trr and Qrr values enable predictable soft-recovery behavior; reduces EMI vs. slower diodes. |
Use Scenario: Constant-current dimming stage for high-brightness LED strings in signage and architectural lighting. IC Role / Device Role / Timing Role: Linear or PWM-controlled current sink; dissipates up to 5 W in constant-current regulation. Use Value: Low RDS(on) and high thermal conductivity (RthJC = 2.5 °C/W) allow direct PCB mounting without discrete heatsink. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP10NK50ZFP | 500 V VDS, 10 A ID, RDS(on) = 0.55 Ω - higher voltage rating but double on-resistance. | Better suited for universal-input offline SMPS; less efficient at 24–48 V due to higher conduction loss. | Select when >100 V blocking is required; avoid for low-voltage, high-efficiency designs where IRF520SPBF's 0.27 Ω gives advantage. |
| IRFZ44NPBF | 55 V VDS, 49 A ID, RDS(on) = 0.028 Ω - lower voltage, much lower RDS(on), higher current capability. | Optimized for 12–24 V systems with high current demand (e.g., power tools); not safe for 48 V+ rails. | Choose for cost-sensitive, high-current 12–24 V applications; IRF520SPBF remains preferred for 48–80 V input ranges requiring 100 V rating. |
Compared with STP10NK50ZFP and IRFZ44NPBF, the IRF520SPBF occupies a mid-voltage niche: it offers superior 100 V capability versus IRFZ44NPBF and significantly lower RDS(on) than STP10NK50ZFP at 24–48 V, making it optimal for industrial DC power distribution and motor control where both voltage margin and conduction efficiency matter.
Availability
IRF520SPBF is available at Aetrix Electronics and suitable for industrial motor control, DC-DC conversion, and LED driver applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for IRF520SPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and thermal performance.
The IRF520SPBF belongs to Vishay's third-generation Power MOSFET family, engineered for high-current, surface-mount power switching in industrial, automotive, and computing applications where fast switching, avalanche robustness, and thermal stability are essential.
FAQ
What is the maximum continuous drain current for IRF520SPBF at 100 °C case temperature?
The IRF520SPBF supports 6.5 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the D2PAK package; operation above this requires active cooling or reduced duty cycle. The IRF520SPBF maintains full functionality across its -55 °C to +175 °C junction temperature range.
Does IRF520SPBF require a gate resistor for basic switching operation?
Yes - a gate resistor is recommended to control dv/dt and suppress ringing. Typical values range from 10 Ω to 47 Ω depending on drive strength and layout; the IRF520SPBF datasheet uses Rg = 25 Ω for avalanche testing and Rg = 18 Ω for switching time characterization. Omitting the resistor risks shoot-through and EMI in high-speed applications using the IRF520SPBF.
Is IRF520SPBF RoHS-compliant and halogen-free?
Yes - IRF520SPBF is lead (Pb)-free and halogen-free per IEC 61249-2-21, as confirmed in the Vishay datasheet revision D. It carries the "-PbF" suffix indicating RoHS compliance and is categorized under Vishay's environmentally compliant material classification. No exemptions apply; the IRF520SPBF meets full EU RoHS Directive 2011/65/EU requirements.
Can IRF520SPBF be used in parallel configurations?
Yes - the IRF520SPBF is explicitly designed for ease of paralleling, supported by positive temperature coefficient of RDS(on) and matched threshold voltage. Layout best practices include symmetrical gate routing, Kelvin source connections, and individual gate resistors. When paralleling multiple IRF520SPBF units, total current scales linearly with unit count under proper thermal management.
What is the body diode forward voltage of IRF520SPBF at 9.2 A and 25 °C?
The body diode forward voltage (VSD) of IRF520SPBF is 1.8 V maximum at IS = 9.2 A and TJ = 25 °C, as specified in the Drain-Source Body Diode Characteristics table. This value increases with temperature and current; at 150 °C, VSD rises to ~2.1 V. Designers should account for this drop in freewheeling paths and synchronous rectification circuits using the IRF520SPBF.
IRF520SPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 9.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 270mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 16 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 360 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.7W (Ta), 60W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
IRF520SPBF FAQ
1.How can I place an order for IRF520SPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF520SPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF520SPBF reliable?
The price and inventory of IRF520SPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF520SPBF is usually 5 days.
3.What payment methods are accepted for IRF520SPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF520SPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF520SPBF?
IRF520SPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF520SPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF520SPBF?
For technical support, including IRF520SPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF520SPBF requirements.
6.How does Aetrix verify that IRF520SPBF is sourced from the original manufacturer or authorized distributors?
All IRF520SPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF520SPBF meets industry standards.
7.What is the process for return or replacement of IRF520SPBF?
All IRF520SPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF520SPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF520SPBF part is unused and in its original packaging.
Return procedure for IRF520SPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRF520SPBF Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
