Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF530

Name: IRF530
Brand: Vishay Siliconix
SKU: IRF530
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRF530

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRF530.pdf

Description:: MOSFET N-CH 100V 14A TO220AB

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:7,053

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRF530 from Vishay Siliconix is a 100 V, 14 A N-channel power MOSFET in TO-220AB package, featuring 0.16 Ω R_DS(on) at V_GS = 10 V, 26 nC total gate charge, and 175 °C maximum junction temperature. It serves as a main switching element in DC-DC converters, motor drives, and power supplies requiring rugged avalanche capability and fast switching.

For engineers reviewing the IRF530 datasheet, IRF530 pinout, IRF530 application, or IRF530 equivalent, key selection criteria include its 100 V V_DS, repetitive avalanche rating (E_AS = 69 mJ), TO-220AB thermal resistance (R_thJC = 1.7 °C/W), and body diode recovery time (t_rr = 150–280 ns) for hard-switched topologies.

Technical Context

This third-generation power MOSFET uses planar V-groove technology to achieve low on-resistance and high dV/dt immunity. Its gate threshold voltage (2.0–4.0 V) enables standard 10 V logic-level drive, while dynamic dV/dt rating (5.5 V/ns) supports reliable operation in noisy inductive switching environments.

The device integrates a robust intrinsic body diode with 14 A continuous source-drain current and 150–280 ns reverse recovery time. Its safe operating area (SOA) is defined up to 100 V and 14 A at T_C = 25 °C, with linear derating to 10 A at 100 °C case temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum blocking voltage for use in 48 V bus and offline auxiliary supply designs
R_DS(on)	0.16 Ω @ V_GS = 10 V - Enables ≤2.2 W conduction loss at 14 A DC, suitable for medium-power SMPS
Q_g	26 nC - Determines gate driver power requirement; compatible with common 1-A peak drivers
I_D (continuous)	14 A @ T_C = 25 °C - Supports 100–150 W load levels with appropriate heatsinking
E_AS	69 mJ - Single-pulse unclamped inductive energy handling without failure, critical for relay/snubberless flyback
t_r/t_f	34 ns / 24 ns - Fast switching transitions reduce overlap losses in hard-switched converters
T_J max	+175 °C - Allows operation in high-ambient industrial enclosures without derating penalty

Pinout & Package

IRF530 is housed in a through-hole TO-220AB package with isolated tab (drain-connected), offering low thermal resistance (R_thJC = 1.7 °C/W) and mechanical robustness for manual or wave-solder assembly.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Receives 10 V logic-level signal; 5.5 nC gate-source charge enables simple CMOS/TTL drive
D (Drain)	High-side power output	Connected to package tab; requires insulating washer when mounted to heatsink
S (Source)	Power return/reference node	Common reference for gate drive and current sensing; ties to low-side switch node in half-bridge

Key Features

Feature	Design Value
Repetitive avalanche rated	14 A I_AR, 8.8 mJ E_AR - Enables reliable operation under transient overloads without external clamping
Dynamic dV/dt immunity	5.5 V/ns - Prevents false turn-on during high-speed switching in noisy power stages
Fast switching	10 ns t_d(on), 23 ns t_d(off) - Reduces switching losses in 50–200 kHz SMPS designs
Ease of paralleling	Positive R_DS(on) temperature coefficient - Ensures current sharing stability across multiple devices
Simple drive requirements	V_GS(th) = 2.0–4.0 V - Compatible with standard 5 V/10 V microcontroller outputs and gate drivers

Applications

DC-DC Buck Converter	Brushed DC Motor Drive
Use Scenario: 24 V input, 5–12 V output, 5–10 A buck regulator for industrial control modules. IC Role / Device Role / Timing Role: Main high-side switching transistor; operates at 100–200 kHz with synchronous rectification. Use Value: 0.16 Ω R_DS(on) limits conduction loss to <1.5 W at 10 A, while 26 nC Q_g ensures minimal driver loss.	Use Scenario: H-bridge driver for 24 V, 5 A brushed motors in automated gate systems. IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration; handles bidirectional current and PWM commutation. Use Value: 14 A continuous rating and 175 °C T_J support sustained stall-current pulses without thermal shutdown.
AC-DC Auxiliary Supply	LED Driver (Constant Current)
Use Scenario: 85–265 V AC input flyback converter delivering 12 V/1 A for system control logic. IC Role / Device Role / Timing Role: Primary-side switching MOSFET; subjected to unclamped inductive stress during demagnetization. Use Value: 69 mJ single-pulse avalanche energy eliminates need for snubber circuits, reducing BOM count and layout area.	Use Scenario: Constant-current buck LED driver for 24 V, 350 mA streetlight modules. IC Role / Device Role / Timing Role: Regulating switch controlling average LED current via PWM dimming at 1–5 kHz. Use Value: Body diode t_rr = 150–280 ns minimizes reverse recovery spikes, improving EMI performance and MOSFET reliability.

DC-DC Buck Converter

Brushed DC Motor Drive

Use Scenario: 24 V input, 5–12 V output, 5–10 A buck regulator for industrial control modules.

IC Role / Device Role / Timing Role: Main high-side switching transistor; operates at 100–200 kHz with synchronous rectification.

Use Value: 0.16 Ω R_DS(on) limits conduction loss to <1.5 W at 10 A, while 26 nC Q_g ensures minimal driver loss.

Use Scenario: H-bridge driver for 24 V, 5 A brushed motors in automated gate systems.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration; handles bidirectional current and PWM commutation.

Use Value: 14 A continuous rating and 175 °C T_J support sustained stall-current pulses without thermal shutdown.

AC-DC Auxiliary Supply

LED Driver (Constant Current)

Use Scenario: 85–265 V AC input flyback converter delivering 12 V/1 A for system control logic.

IC Role / Device Role / Timing Role: Primary-side switching MOSFET; subjected to unclamped inductive stress during demagnetization.

Use Value: 69 mJ single-pulse avalanche energy eliminates need for snubber circuits, reducing BOM count and layout area.

Use Scenario: Constant-current buck LED driver for 24 V, 350 mA streetlight modules.

IC Role / Device Role / Timing Role: Regulating switch controlling average LED current via PWM dimming at 1–5 kHz.

Use Value: Body diode t_rr = 150–280 ns minimizes reverse recovery spikes, improving EMI performance and MOSFET reliability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP16NF10	100 V, 16 A, R_DS(on) = 0.13 Ω, Q_g = 25 nC, TO-220FP package (full-pack)	Lower R_DS(on) but higher thermal resistance (R_thJC = 2.5 °C/W); no isolated tab	Preferred where lower conduction loss is critical and heatsink isolation is not required
FQP13N10	100 V, 12.5 A, R_DS(on) = 0.18 Ω, Q_g = 22 nC, TO-220 package with non-isolated tab	Slightly lower current rating and higher R_DS(on); same pinout but drain not electrically isolated from tab	Cost-optimized alternative when board-level isolation is handled externally

Compared with STP16NF10 and FQP13N10, the IRF530 offers superior thermal interface via its isolated TO-220AB tab and proven avalanche ruggedness-critical for flyback and motor drive applications where voltage transients exceed 80 V.

Availability

IRF530 is available at Aetrix Electronics and suitable for DC-DC converters, brushed motor drives, and AC-DC auxiliary supplies requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRF530 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, efficiency, and reliability.

The IRF530 belongs to Vishay's third-generation power MOSFET family, engineered for commercial and industrial switching applications demanding high avalanche energy, fast switching, and ease of thermal management in TO-220 platforms.

FAQ

What is the maximum continuous drain current for IRF530 at 100 °C case temperature?

The IRF530 supports 10 A continuous drain current at T_C = 100 °C, per its absolute maximum ratings table. This derating reflects thermal limitations of the TO-220AB package and ensures safe operation within the 175 °C maximum junction temperature limit. Designers must verify heatsink sizing using R_thJC = 1.7 °C/W and ambient conditions to maintain this rating in IRF530-based systems.

Does IRF530 have an electrically isolated drain tab?

Yes, the IRF530 uses the TO-220AB package variant with an electrically isolated drain tab. This allows direct mounting to a grounded heatsink without requiring an insulating pad, simplifying thermal design and reducing parasitic inductance. The isolation is confirmed in Vishay's package drawings and ordering information for IRF530PbF-BE3, distinguishing it from non-isolated TO-220 variants.

What is the typical gate threshold voltage range for IRF530?

The IRF530 has a gate-source threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V at T_J = 25 °C and I_D = 250 μA. This logic-level-compatible range ensures reliable turn-on with standard 5 V or 10 V gate drivers, while the positive temperature coefficient of V_GS(th) provides inherent current limiting during overload conditions in IRF530 circuits.

Can IRF530 be used in avalanche mode for energy clamping?

Yes, the IRF530 is explicitly rated for repetitive avalanche operation with I_AR = 14 A and E_AR = 8.8 mJ, and single-pulse avalanche energy of 69 mJ. These values are validated per test condition b (V_DD = 25 V, L = 528 μH, R_g = 25 Ω). Designers may use IRF530 in unclamped inductive switching without external snubbers, provided pulse width and duty cycle remain within datasheet limits.

What is the body diode reverse recovery time for IRF530?

The IRF530 body diode exhibits a reverse recovery time (t_rr) of 150–280 ns at T_J = 25 °C, I_F = 14 A, and dI/dt = 100 A/μs. This fast recovery characteristic reduces switching noise and improves efficiency in synchronous rectification and freewheeling applications. The associated Q_rr is 0.85–1.7 μC, directly impacting turn-off losses in high-frequency IRF530 designs.

IRF530 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 160mOhm @ 8.4A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 26 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 670 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 88W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRF530 FAQ

1.How can I place an order for IRF530 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF530 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF530 reliable?

The price and inventory of IRF530 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF530 is usually 5 days.

3.What payment methods are accepted for IRF530?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF530 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF530?

IRF530 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF530 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF530?

For technical support, including IRF530 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF530 requirements.

6.How does Aetrix verify that IRF530 is sourced from the original manufacturer or authorized distributors?

All IRF530 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF530 meets industry standards.

7.What is the process for return or replacement of IRF530?

All IRF530 units undergo pre-shipment inspection (PSI). If there is an issue with IRF530, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF530 part is unused and in its original packaging.

Return procedure for IRF530:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …