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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF530PBF-BE3

Name: IRF530PBF-BE3
Brand: Vishay Siliconix
SKU: IRF530PBF-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF530PBF-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRF530PBF-BE3.pdf

Description:: MOSFET N-CH 100V 14A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF530PBF-BE3 from Vishay Siliconix is a 100 V, 14 A N-channel power MOSFET in TO-220AB package, featuring 0.16 Ω R_DS(on) at V_GS = 10 V, 26 nC total gate charge, and 175 °C maximum junction temperature - designed for DC-DC converters, motor drives, and power switching circuits requiring rugged avalanche capability and fast switching.

For engineers reviewing the IRF530PBF-BE3 datasheet, IRF530PBF-BE3 pinout, IRF530PBF-BE3 application, or IRF530PBF-BE3 equivalent, key selection criteria include its repetitive avalanche rating (14 A), peak diode recovery dV/dt (5.5 V/ns), and thermal resistance (R_thJC = 1.7 °C/W), critical for high-reliability industrial power stage design.

Technical Context

This third-generation planar VDMOS device uses silicon technology optimized for low conduction loss and robust unclamped inductive switching. Its gate threshold voltage (2.0–4.0 V) enables standard 10 V logic-level drive, while dynamic parameters - including Q_gd/Q_g ratio of ~42% - support stable hard-switching operation up to 100 kHz in buck and half-bridge topologies.

The integrated body diode exhibits t_rr = 150–280 ns and Q_rr = 0.85–1.7 μC at I_F = 14 A, dI/dt = 100 A/μs, making it suitable for freewheeling in non-synchronous converters where reverse recovery behavior directly impacts efficiency and EMI.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports input voltages up to 80 V DC with 20% safety margin in industrial power supplies
R_DS(on)	0.16 Ω @ V_GS = 10 V - yields ≤1.8 W conduction loss at 14 A continuous drain current
Q_g	26 nC - determines gate drive power requirement (~130 mW at 100 kHz, V_GS swing = 10 V)
E_AS	69 mJ - enables reliable operation under unclamped inductive load transients without external snubbers
t_r/t_f	34 ns / 24 ns - supports efficient hard-switching in 50–100 kHz SMPS designs with minimal switching loss
T_J max	+175 °C - allows full-rated current derating down to T_C = 100 °C (10 A), enabling compact heatsink solutions
dV/dt rating	5.5 V/ns - ensures immunity to false turn-on during high-speed commutation in noisy motor control environments

Pinout & Package

IRF530PBF-BE3 is housed in a through-hole TO-220AB package with isolated tab (drain-connected), offering low thermal resistance (R_thJC = 1.7 °C/W) and mechanical robustness for industrial mounting. The package includes three leads: Gate (G), Drain (D), and Source (S), with standardized lead spacing and coplanarity compliant with JEDEC TO-220 outline.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate control terminal	Receives voltage-controlled signal to modulate channel conductivity; requires ≤±20 V rating and low-impedance drive due to 26 nC Q_g
D	Drain connection (tab)	High-side power node; electrically connected to metal tab - must be insulated from heatsink unless referenced to same potential
S	Source reference terminal	Return path for load current and gate drive return; forms common reference for V_GS control loop and body diode cathode

Key Features

Feature	Design Value
Repetitive avalanche rated	14 A I_AR, 8.8 mJ E_AR - eliminates need for external clamping in inductive load switching (e.g., solenoid drivers)
Dynamic dV/dt immunity	5.5 V/ns - prevents spurious turn-on during fast voltage transients in half-bridge configurations
Fast switching performance	t_r = 34 ns, t_f = 24 ns - reduces transition losses in 50–100 kHz power converters
Low gate charge	Q_g = 26 nC - enables use of low-cost, low-power gate drivers (e.g., TC4420, UCC3732x)
175 °C operation	Full-rated current available up to T_C = 100 °C - supports high-ambient applications like enclosed motor drives

Applications

DC-DC Buck Converter	Brushed DC Motor Driver
Use Scenario: Step-down regulation from 24–48 V bus to 5–12 V logic rails in industrial PLC modules. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch controlling energy transfer into output inductor. Use Value: 0.16 Ω R_DS(on) minimizes conduction loss at 10 A load; 26 nC Q_g enables efficient 100 kHz operation with minimal driver overhead.	Use Scenario: H-bridge drive for 24 V, 8 A brushed motors in automated gate actuators. IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional current and freewheeling via internal body diode. Use Value: 175 °C T_J rating sustains duty cycles >60% in thermally constrained enclosures; 69 mJ E_AS absorbs inductive kickback during PWM reversal.
AC-DC Auxiliary Supply	LED Constant-Current Driver
Use Scenario: Flyback primary switch in 15 W auxiliary power supply for smart metering systems. IC Role / Device Role / Timing Role: Primary-side power switch operating in discontinuous conduction mode (DCM) at 65 kHz. Use Value: 100 V V_DS accommodates reflected output voltage + leakage spike margin; 5.5 V/ns dV/dt rating suppresses false triggering from transformer ringing.	Use Scenario: Buck-based constant-current driver for high-brightness LED arrays in street lighting fixtures. IC Role / Device Role / Timing Role: Series-pass switch regulating LED string current via analog/PWM dimming interface. Use Value: Repetitive avalanche capability handles open-circuit transients during LED string fault detection; 14 A I_D supports scalable multi-string designs.

DC-DC Buck Converter

Brushed DC Motor Driver

Use Scenario: Step-down regulation from 24–48 V bus to 5–12 V logic rails in industrial PLC modules.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch controlling energy transfer into output inductor.

Use Value: 0.16 Ω R_DS(on) minimizes conduction loss at 10 A load; 26 nC Q_g enables efficient 100 kHz operation with minimal driver overhead.

Use Scenario: H-bridge drive for 24 V, 8 A brushed motors in automated gate actuators.

IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional current and freewheeling via internal body diode.

Use Value: 175 °C T_J rating sustains duty cycles >60% in thermally constrained enclosures; 69 mJ E_AS absorbs inductive kickback during PWM reversal.

AC-DC Auxiliary Supply

LED Constant-Current Driver

Use Scenario: Flyback primary switch in 15 W auxiliary power supply for smart metering systems.

IC Role / Device Role / Timing Role: Primary-side power switch operating in discontinuous conduction mode (DCM) at 65 kHz.

Use Value: 100 V V_DS accommodates reflected output voltage + leakage spike margin; 5.5 V/ns dV/dt rating suppresses false triggering from transformer ringing.

Use Scenario: Buck-based constant-current driver for high-brightness LED arrays in street lighting fixtures.

IC Role / Device Role / Timing Role: Series-pass switch regulating LED string current via analog/PWM dimming interface.

Use Value: Repetitive avalanche capability handles open-circuit transients during LED string fault detection; 14 A I_D supports scalable multi-string designs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP14NF10	100 V, 14 A, R_DS(on) = 0.18 Ω, Q_g = 22 nC, TO-220	Slightly higher on-resistance but lower gate charge; no specified repetitive avalanche rating	Preferred where gate drive power is constrained and avalanche stress is minimal
IXTP12N10P	100 V, 12 A, R_DS(on) = 0.15 Ω, Q_g = 20 nC, TO-220	Lower current rating but superior R_DS(on); avalanche energy not characterized per datasheet	Selected for space-constrained designs needing lowest possible conduction loss below 12 A

Compared with STP14NF10 and IXTP12N10P, IRF530PBF-BE3 provides verified repetitive avalanche capability and higher continuous current (14 A at T_C = 25 °C), making it more suitable for inductive load switching where transient energy absorption is required without external protection.

Availability

IRF530PBF-BE3 is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, and LED drivers requiring stable component supply across industrial production lifecycles.

Supply support for IRF530PBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and thermal performance.

The IRF530PBF-BE3 belongs to Vishay's legacy high-voltage power MOSFET family, engineered for cost-sensitive industrial power switching applications demanding proven avalanche robustness and TO-220 compatibility.

FAQ

What is the maximum continuous drain current for IRF530PBF-BE3 at 100 °C case temperature?

The IRF530PBF-BE3 supports 10 A continuous drain current at T_C = 100 °C, per its linear derating factor of 0.59 W/°C and P_D = 88 W at T_C = 25 °C. This rating ensures sustained operation in thermally demanding environments such as enclosed motor controllers or high-ambient industrial power supplies, provided adequate heatsinking maintains case temperature within specification.

Does IRF530PBF-BE3 have a RoHS-compliant and halogen-free construction?

Yes, IRF530PBF-BE3 is explicitly designated as lead (Pb)-free and halogen-free per Vishay's ordering nomenclature. The "-BE3" suffix confirms compliance with both RoHS Directive 2011/65/EU and halogen-free standards (IEC 61249-2-21), verified in the official datasheet S21-0819-Rev. C. This makes IRF530PBF-BE3 suitable for environmentally regulated industrial and consumer equipment.

What is the typical body diode reverse recovery time (t_rr) of IRF530PBF-BE3?

The IRF530PBF-BE3 exhibits a typical body diode reverse recovery time (t_rr) of 150 ns, with a maximum of 280 ns under test conditions of I_F = 14 A, dI/dt = 100 A/μs, and T_J = 25 °C. This parameter is critical when using the device in non-synchronous buck or flyback topologies where the body diode conducts freewheeling current, directly influencing switching loss and EMI generation.

Can IRF530PBF-BE3 be paralleled with identical units for higher current handling?

Yes, IRF530PBF-BE3 is designed for ease of paralleling, as confirmed in its official features list. Its positive temperature coefficient of R_DS(on) promotes current sharing across multiple devices, and low gate charge (26 nC) simplifies matched gate drive layout. For stable operation, ensure symmetrical PCB routing, individual gate resistors (≤10 Ω), and thermal coupling via shared heatsink to maintain uniform junction temperatures.

What is the gate-source threshold voltage range for IRF530PBF-BE3?

The gate-source threshold voltage (V_GS(th)) for IRF530PBF-BE3 is specified from 2.0 V to 4.0 V at V_DS = V_GS and I_D = 250 μA. This range indicates compatibility with standard 5 V and 10 V logic-level gate drivers, though full enhancement (R_DS(on) ≤ 0.16 Ω) requires V_GS ≥ 10 V. Designers should verify gate drive voltage margins to avoid partial turn-on and excessive conduction loss.

IRF530PBF-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 160mOhm @ 8.4A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 26 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 670 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 88W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRF530PBF-BE3 FAQ

1.How can I place an order for IRF530PBF-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF530PBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF530PBF-BE3 reliable?

The price and inventory of IRF530PBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF530PBF-BE3 is usually 5 days.

3.What payment methods are accepted for IRF530PBF-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF530PBF-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF530PBF-BE3?

IRF530PBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF530PBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF530PBF-BE3?

For technical support, including IRF530PBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF530PBF-BE3 requirements.

6.How does Aetrix verify that IRF530PBF-BE3 is sourced from the original manufacturer or authorized distributors?

All IRF530PBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF530PBF-BE3 meets industry standards.

7.What is the process for return or replacement of IRF530PBF-BE3?

All IRF530PBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRF530PBF-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF530PBF-BE3 part is unused and in its original packaging.

Return procedure for IRF530PBF-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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