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Vishay Siliconix IRF530SPBF
- Part No.:
- IRF530SPBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRF530SPBF.pdf
- Description:
- MOSFET N-CH 100V 14A TO263
- Quantity:
- Payment:
- Shipping:
Inventory:2,572
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Product details
Overview
IRF530SPBF from Vishay Siliconix is a surface-mount N-channel enhancement-mode power MOSFET in D2PAK (TO-263) package, rated for 100 V drain-source voltage, 14 A continuous drain current at 25 °C, and 0.16 Ω RDS(on) at VGS = 10 V. It delivers fast switching, repetitive avalanche capability, and 175 °C junction operation-used in DC-DC converters, motor drive half-bridges, and industrial power supplies.
For engineers reviewing the IRF530SPBF datasheet, IRF530SPBF pinout, IRF530SPBF application, or IRF530SPBF equivalent, key selection criteria include its 26 nC total gate charge, 5.5 V gate threshold range, 69 mJ single-pulse avalanche energy, thermal resistance of 1.7 °C/W (junction-to-case), and compatibility with high-current PCB-mount designs requiring ruggedized switching performance.
Technical Context
This third-generation power MOSFET employs planar silicon technology optimized for low conduction loss and robust unclamped inductive switching. Its dynamic dv/dt rating of 5.5 V/ns and 14 A repetitive avalanche current support reliable operation under hard-switching conditions without external snubbers.
The device integrates a fast-recovery body diode with 150–280 ns reverse recovery time and 0.85–1.7 μC Qrr, enabling efficient synchronous rectification and freewheeling in buck and flyback topologies. Gate drive requirements are defined by 5.5 nC Qgs, 11 nC Qgd, and 1.0–4.7 Ω gate input resistance.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - Maximum blocking voltage in high-side switch or bridge-leg applications |
| RDS(on) @ VGS = 10 V | 0.16 Ω - Enables ≤2.2 W conduction loss at 11.7 A RMS in 100 kHz PWM inverters |
| ID Continuous @ TC = 25 °C | 14 A - Supports ≥120 W output in thermally managed surface-mount power stages |
| Qg Total | 26 nC - Determines gate driver peak current requirement (~2.2 A for 12 ns rise time) |
| EAS Single-Pulse Avalanche | 69 mJ - Allows safe operation during 528 μH inductive turn-off transients up to 14 A |
| TJ Operating Range | −55 to +175 °C - Enables deployment in automotive under-hood and industrial motor control environments |
| RthJC | 1.7 °C/W - Requires minimum 1"² copper area for full 88 W dissipation at case temperature |
Pinout & Package
D2PAK (TO-263) surface-mount package with exposed drain tab for thermal and electrical connection; 3-pin configuration (G, D, S) with G and S on gull-wing leads, D on integral thermal pad.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Receives 10 V logic-level drive; 5.5 nC Qgs defines Miller plateau duration |
| D (Drain) | High-side power terminal | Connected to exposed thermal pad; carries full load current and avalanche energy return path |
| S (Source) | Reference and return node | Common return for gate drive and load current; internal source inductance LS = 7.5 nH affects di/dt ringing |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | Supports 8.8 mJ per pulse at 14 A without derating-eliminates need for external clamping in relay drivers |
| Dynamic dv/dt immunity | 5.5 V/ns - Prevents false turn-on in high-di/dt half-bridge configurations with shared ground paths |
| Fast switching | 10 ns turn-on delay + 34 ns rise time - Enables >500 kHz operation in LLC resonant converters |
| 175 °C max junction temperature | Enables sealed enclosure use without active cooling in industrial PLC power modules |
| Low RDS(on) × Qg figure-of-merit | 4.16 Ω·nC - Balances conduction and switching losses for mid-power SMPS efficiency optimization |
Applications
| DC-DC Buck Converter | Brushed DC Motor Driver |
|---|---|
Use Scenario: 24 V input, 5–12 V output, 8 A continuous step-down stage in telecom power shelf. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 300 kHz with 10 V gate drive. Use Value: 0.16 Ω RDS(on) limits conduction loss to <1.3 W; 26 nC Qg enables clean 12 ns edge transitions. |
Use Scenario: H-bridge driver for 24 V, 10 A brushed motor in automated gate actuator. IC Role / Device Role / Timing Role: Low-side switch controlling motor direction and PWM speed regulation. Use Value: 69 mJ EAS safely absorbs inductive kickback during 100% duty-cycle braking events. |
| AC-DC PFC Front-End | Industrial Solenoid Control |
Use Scenario: Boost PFC stage in 300 W server PSU with 380 V DC bus and 10 A peak inductor current. IC Role / Device Role / Timing Role: Switching element in critical conduction mode (CRM) boost converter. Use Value: 100 V VDS provides 20% margin over 380 V bus; 175 °C rating sustains operation during ambient 70 °C chassis temps. |
Use Scenario: 24 V/12 A solenoid valve driver in hydraulic control system with 10 ms on-time pulses. IC Role / Device Role / Timing Role: High-current, low-duty-cycle switch with fast turn-off to prevent coil overheating. Use Value: 24 ns fall time and 23 ns turn-off delay ensure precise 10 ms pulse width control; 14 A ID handles cold-start surge. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP14NF10 | 100 V, 14 A, RDS(on) = 0.18 Ω, Qg = 22 nC, TO-220 package | Higher RDS(on) and through-hole mounting limit thermal performance in dense SMT layouts | Prefer when legacy through-hole assembly or lower gate charge is prioritized over thermal density |
| IXTP12N10D2 | 100 V, 12 A, RDS(on) = 0.14 Ω, Qg = 20 nC, TO-220AB package, no avalanche rating | Lacks repetitive avalanche specification; unsuitable for inductive switching without external protection | Select only in resistive-load or clamped-inductive applications where EAS is not required |
Compared with STP14NF10 and IXTP12N10D2, the IRF530SPBF offers superior thermal management via D2PAK mounting, verified 69 mJ avalanche robustness, and tighter RDS(on) tolerance-making it optimal for high-reliability, high-density SMT power stages where layout space and transient resilience are critical.
Availability
IRF530SPBF is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, and industrial solenoid controllers requiring stable component supply and RoHS-compliant lead-free packaging.
Supply support for IRF530SPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, thermal performance, and reliability.
The IRF530SPBF belongs to Vishay's third-generation surface-mount power MOSFET family, engineered for high-current, high-temperature industrial and automotive power conversion where avalanche capability and low RDS(on) × Qg are essential.
FAQ
What is the maximum continuous drain current for IRF530SPBF at 100 °C case temperature?
The IRF530SPBF supports 10 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package under sustained high-temperature operation. Designers must verify PCB copper area and airflow to maintain case temperature below 100 °C when operating near this limit. The IRF530SPBF datasheet confirms this value applies to both leaded and lead-free versions including IRF530SPBF.
Does IRF530SPBF have a specified body diode reverse recovery time?
Yes, the IRF530SPBF body diode has a typical reverse recovery time (trr) of 150 ns and maximum of 280 ns at TJ = 25 °C, IF = 14 A, and di/dt = 100 A/μs. This parameter is critical for evaluating cross-conduction losses in synchronous rectifiers and freewheeling paths. The IRF530SPBF datasheet includes trr in the Drain-Source Body Diode Characteristics section, confirming its relevance for high-frequency switching applications.
Is IRF530SPBF suitable for logic-level gate drive?
No, the IRF530SPBF is not a logic-level MOSFET. Its gate threshold voltage (VGS(th)) ranges from 2.0 V to 4.0 V, but full enhancement requires VGS = 10 V to achieve RDS(on) = 0.16 Ω. Driving it with 3.3 V or 5 V logic will result in significantly higher on-resistance and conduction loss. The IRF530SPBF datasheet specifies RDS(on) only at VGS = 10 V, confirming standard-level gate drive requirement.
What is the thermal resistance from junction to ambient for IRF530SPBF in standard PCB mount?
The IRF530SPBF has a maximum junction-to-ambient thermal resistance (RthJA) of 40 °C/W when mounted on a 1" square FR-4 PCB, per the Thermal Resistance Ratings table. This value assumes standard JEDEC test conditions and is substantially better than the 62 °C/W rating for still-air ambient. The IRF530SPBF's D2PAK package relies on PCB copper area for heat spreading, so actual RthJA depends heavily on board layout-verified in the IRF530SPBF datasheet Figure 9 and thermal notes.
Can IRF530SPBF be paralleled with identical units for higher current handling?
Yes, the IRF530SPBF is explicitly designed for ease of paralleling, as stated in its Features list. Its positive temperature coefficient of RDS(on) ensures current sharing stability across multiple devices. Designers should match gate drive impedance and minimize source inductance imbalance (<1 nH difference) to avoid dynamic current skew. The IRF530SPBF datasheet confirms this capability in both the Features section and Typical Characteristics curves showing normalized on-resistance vs. temperature.
IRF530SPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 160mOhm @ 8.4A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 26 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 670 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.7W (Ta), 88W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
IRF530SPBF FAQ
1.How can I place an order for IRF530SPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF530SPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF530SPBF reliable?
The price and inventory of IRF530SPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF530SPBF is usually 5 days.
3.What payment methods are accepted for IRF530SPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF530SPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF530SPBF?
IRF530SPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF530SPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF530SPBF?
For technical support, including IRF530SPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF530SPBF requirements.
6.How does Aetrix verify that IRF530SPBF is sourced from the original manufacturer or authorized distributors?
All IRF530SPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF530SPBF meets industry standards.
7.What is the process for return or replacement of IRF530SPBF?
All IRF530SPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF530SPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF530SPBF part is unused and in its original packaging.
Return procedure for IRF530SPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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