Vishay Siliconix IRF530STRR

Overview

IRF530STRR from Vishay Siliconix is a surface-mount N-channel power MOSFET in D2PAK (TO-263) package, rated for 100 V drain-source voltage, 14 A continuous drain current at 25 °C, and 0.16 Ω R_DS(on) at V_GS = 10 V. It delivers fast switching, repetitive avalanche capability, and operates up to 175 °C junction temperature - used in DC-DC converters, motor drive half-bridges, and industrial power supplies.

For engineers reviewing the IRF530STRR datasheet, IRF530STRR pinout, IRF530STRR application, or IRF530STRR equivalent, key selection criteria include its 26 nC total gate charge, 5.5 nC gate-source charge, 11 nC gate-drain charge, 69 mJ single-pulse avalanche energy, and suitability for high-current surface-mount power switching where thermal robustness and dynamic dv/dt immunity are required.

Technical Context

This third-generation power MOSFET uses planar silicon technology optimized for low conduction loss and rugged unclamped inductive switching. Its D2PAK package provides low junction-to-case thermal resistance (1.7 °C/W) and supports PCB-mounted power dissipation up to 3.7 W with FR-4 layout.

The device features a built-in body diode with 150–280 ns reverse recovery time and 0.85–1.7 μC reverse recovery charge, enabling use in synchronous rectification and freewheeling paths. Gate threshold voltage ranges from 2.0 V to 4.0 V, ensuring reliable turn-on with standard 10 V gate drivers while maintaining noise immunity.

Key Specifications

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for thermal conduction and mechanical anchoring. Dimensions per JEDEC outline: 10.67 mm × 9.65 mm × 4.83 mm (L × W × H), with 3-pin configuration (G, D, S).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP16NF10 and IXTP16N10P, the IRF530STRR offers superior surface-mount thermal management via D2PAK, verified repetitive avalanche capability, and documented 5.5 V/ns dv/dt immunity - making it preferred for high-reliability, high-density, and inductive-load applications where layout constraints and transient robustness are critical.

Availability

IRF530STRR is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC power conversion, and solid-state relay designs requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.

Supply support for IRF530STRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, thermal performance, and reliability.

The IRF530STRR belongs to Vishay's third-generation surface-mount power MOSFET family, engineered for high-current, high-temperature industrial and automotive power switching where low R_DS(on), fast switching, and avalanche survivability are essential.

FAQ

What is the maximum continuous drain current for IRF530STRR at 100 °C case temperature?

The IRF530STRR supports 10 A continuous drain current at T_C = 100 °C, per its absolute maximum ratings table. This derating reflects thermal limits of the D2PAK package under sustained high-power operation. Designers must verify PCB copper area and airflow to maintain case temperature within this limit during full-load conditions. The IRF530STRR's 1.7 °C/W R_thJC enables effective heat transfer to the board when mounted per Vishay's recommended pad layout.

Does IRF530STRR have a specified body diode reverse recovery time?

Yes, the IRF530STRR body diode has a reverse recovery time (t_rr) of 150–280 ns at T_J = 25 °C, I_F = 14 A, and di/dt = 100 A/μs. This parameter is critical for evaluating commutation losses in synchronous rectifiers and half-bridge freewheeling paths. The IRF530STRR's t_rr and associated Q_rr (0.85–1.7 μC) are measured and guaranteed per the datasheet, supporting accurate loss modeling in high-frequency switching designs.

Is IRF530STRR RoHS-compliant and halogen-free?

Yes, IRF530STRR is lead (Pb)-free and halogen-free, meeting RoHS Directive 2011/65/EU and Vishay's material categorization standard (document 99912). The "-GE3" suffix in related part numbers (e.g., SiHF530STRR-GE3) explicitly denotes this compliance. The IRF530STRR itself carries Pb-free terminations and conforms to JEDEC J-STD-020 moisture sensitivity level 1, enabling standard reflow soldering without special handling.

What is the gate threshold voltage range for IRF530STRR?

The IRF530STRR has a gate-source threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V at V_DS = V_GS and I_D = 250 μA. This ensures turn-on compatibility with standard 3.3 V and 5 V logic systems while providing margin against noise-induced conduction. The IRF530STRR is not a logic-level MOSFET; full enhancement requires ≥10 V gate drive to achieve its specified 0.16 Ω R_DS(on).

Can IRF530STRR be paralleled with identical units for higher current capacity?

Yes, the IRF530STRR is designed for ease of paralleling due to its positive temperature coefficient of R_DS(on), which promotes current sharing across multiple devices. The datasheet explicitly lists "Ease of paralleling" as a feature. To ensure balanced operation, designers must match gate drive impedance, minimize layout asymmetry, and use Kelvin source connections where possible. The IRF530STRR's low gate charge (26 nC) also simplifies synchronized multi-device driving.