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Vishay Siliconix IRF530STRRPBF
- Part No.:
- IRF530STRRPBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRF530STRRPBF.pdf
- Description:
- MOSFET N-CH 100V 14A TO263
- Quantity:
- Payment:
- Shipping:
Inventory:197
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Product details
Overview
IRF530STRRPBF from Vishay Siliconix is a surface-mount N-channel power MOSFET in D2PAK (TO-263) package, rated for 100 V drain-source voltage, 14 A continuous drain current at TC = 25 °C, and 0.16 Ω RDS(on) at VGS = 10 V. It supports fast switching, repetitive avalanche operation, and 175 °C junction temperature - used in DC-DC converters, motor drives, and power supply primary-side switches.
For engineers reviewing the IRF530STRRPBF datasheet, IRF530STRRPBF pinout, IRF530STRRPBF application, or IRF530STRRPBF equivalent, key selection criteria include its 100 V rating, 0.16 Ω on-resistance, 26 nC total gate charge, D2PAK thermal performance, and suitability for high-current surface-mount power switching where ruggedness and ease of paralleling are required.
Technical Context
This third-generation power MOSFET uses planar V-groove silicon technology optimized for low RDS(on) and robust avalanche capability. Its dynamic dv/dt rating of 5.5 V/ns and 69 mJ single-pulse avalanche energy support reliable operation under inductive switching stress.
The device features integrated body diode with 150–280 ns reverse recovery time and 0.85–1.7 μC Qrr, enabling use in freewheeling and synchronous rectification roles without external diodes in moderate-frequency topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - supports 48 V input systems with ≥2× safety margin against transients |
| RDS(on) @ VGS = 10 V | 0.16 Ω - enables ≤2.2 W conduction loss at 12 A, suitable for thermally constrained PCB mounts |
| ID (continuous, TC = 25 °C) | 14 A - delivers high current density in D2PAK without external heatsink in forced-air designs |
| Qg | 26 nC - determines gate drive power requirement (~130 µJ per switch cycle at 10 V) |
| EAS | 69 mJ - allows unclamped inductive switching up to 14 A without failure, reducing snubber complexity |
| TJ max | 175 °C - permits operation in automotive under-hood or industrial ambient environments |
| RthJC | 1.7 °C/W - enables efficient heat transfer to heatsink or copper pour, critical for >5 W dissipation |
Pinout & Package
D2PAK (TO-263) package: surface-mount, single-ended drain tab (exposed thermal pad), 3-pin configuration with Gull-wing leads. Thermal pad soldered to PCB copper area improves thermal resistance by up to 40% vs. standard FR-4 mounting.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Gate (G) | Control terminal | Receives 10 V logic-level drive; 5.5 nC Qgs ensures fast turn-on with low drive current demand |
| Drain (D) | High-side power output | Connected to exposed copper thermal pad; carries full load current and dissipates heat directly into PCB |
| Source (S) | Reference node / return path | Serves as common reference for gate drive and current sensing; internal source inductance = 7.5 nH affects switching ringing |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | 8.8 mJ per pulse - enables reliable operation in hard-switched flyback or forward converters without overvoltage clamping |
| Dynamic dv/dt immunity | 5.5 V/ns - suppresses false turn-on during high-speed commutation in noisy power stages |
| Fast switching | 10 ns td(on), 23 ns td(off) - reduces switching losses in 100–500 kHz SMPS designs |
| Easy paralleling | Positive RDS(on) temperature coefficient - ensures current sharing stability across multiple devices without ballast resistors |
| RoHS-compliant, halogen-free | Lead (Pb)-free and halogen-free construction - meets IPC-1752A material declaration and EU ELV requirements |
Applications
| DC-DC Buck Converter | Brushed DC Motor Driver |
|---|---|
Use Scenario: Step-down regulation from 48 V bus to 12 V/5 V for industrial control modules. IC Role / Device Role / Timing Role: High-side synchronous switch operating at 250 kHz with 14 A peak current. Use Value: 0.16 Ω RDS(on) limits conduction loss to <1.5 W at full load; D2PAK thermal pad sustains 175 °C junction under 100% duty cycling. |
Use Scenario: H-bridge half-bridge leg driving 24 V, 10 A brushed motors in automated gate actuators. IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional current with body diode freewheeling. Use Value: 150–280 ns trr and 2.5 V VSD minimize diode conduction loss and recovery spikes during PWM commutation. |
| AC-DC Power Supply | LED Constant-Current Driver |
Use Scenario: Primary-side switch in 65 W offline flyback converter with universal AC input. IC Role / Device Role / Timing Role: Main power switch subjected to 600 V transient spikes and repetitive avalanche stress. Use Value: 69 mJ EAS and 100 V VDS allow safe operation without snubber network in cost-sensitive consumer adapters. |
Use Scenario: Constant-current buck controller for high-brightness LED strings in street lighting fixtures. IC Role / Device Role / Timing Role: PWM-controlled current regulator modulating 1–3 A through 12–24 V LED loads. Use Value: 14 A ID rating provides 3× headroom for surge currents; 175 °C TJ rating ensures reliability in sealed outdoor enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP14NK100ZFP | 1000 V rating, 0.58 Ω RDS(on), TO-220FP package | Better for 400 V DC-link applications; higher RDS(on) increases conduction loss at 12–24 V loads | Select when higher voltage blocking is needed and surface-mount is not mandatory |
| IRFZ44NPBF | 55 V VDS, 0.028 Ω RDS(on), TO-220 package | Lower voltage rating limits use to ≤24 V systems; lower on-resistance benefits high-current 12 V battery apps | Select for cost-sensitive 12 V automotive or portable power where 100 V margin is unnecessary |
Compared with STP14NK100ZFP and IRFZ44NPBF, the IRF530STRRPBF uniquely balances 100 V capability, D2PAK surface-mount compatibility, and 0.16 Ω on-resistance - making it optimal for space-constrained 24–48 V industrial power stages requiring both ruggedness and thermal efficiency.
Availability
IRF530STRRPBF is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, and AC-DC power supplies requiring stable component supply, long-term manufacturability, and RoHS-compliant sourcing.
Supply support for IRF530STRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The IRF530STRRPBF belongs to Vishay's third-generation surface-mount power MOSFET family, engineered for high-current, high-temperature switching in compact power conversion systems where thermal performance and avalanche ruggedness are critical.
FAQ
What is the maximum continuous drain current for IRF530STRRPBF at 100 °C case temperature?
The IRF530STRRPBF supports 10 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package under sustained high-power operation and must be validated with actual board layout and airflow conditions. The IRF530STRRPBF maintains safe operation up to 175 °C junction temperature, allowing design margin in thermally challenging environments.
Does IRF530STRRPBF require a gate resistor for stable switching?
Yes - a gate resistor is recommended to control dV/dt and suppress oscillation caused by the IRF530STRRPBF's 7.5 nH internal source inductance and 26 nC total gate charge. Typical values range from 10 Ω to 47 Ω depending on switching frequency and drive strength. The IRF530STRRPBF datasheet specifies Rg = 12 Ω in switching time test circuits, confirming its sensitivity to gate loop inductance and need for controlled turn-on/turn-off.
Is IRF530STRRPBF pin-compatible with older IRF530 variants in TO-220?
No - the IRF530STRRPBF uses the D2PAK (TO-263) surface-mount package with three gull-wing leads and an exposed drain thermal pad, whereas legacy IRF530 in TO-220 has through-hole leads and no thermal pad. Pin count and function (G/D/S) match, but mechanical footprint, thermal interface, and soldering process differ significantly. The IRF530STRRPBF cannot be substituted without PCB redesign.
What is the body diode forward voltage of IRF530STRRPBF at 14 A and 25 °C?
The body diode forward voltage (VSD) of the IRF530STRRPBF is 2.5 V at IS = 14 A and TJ = 25 °C, as measured with VGS = 0 V. This parameter is critical for freewheeling applications and impacts conduction loss during dead-time intervals. At elevated temperatures (e.g., 175 °C), VSD decreases slightly due to negative temperature coefficient of the intrinsic p-n junction.
Can IRF530STRRPBF be used in linear mode (as a pass transistor)?
The IRF530STRRPBF is not characterized or guaranteed for linear-mode operation. Its Safe Operating Area (SOA) curve shows limited capability above 10 V VDS at high current, and thermal runaway risk increases due to positive temperature coefficient of RDS(on). For linear regulation, dedicated lateral MOSFETs or BJTs with SOA-rated curves should be selected instead of the IRF530STRRPBF.
IRF530STRRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 160mOhm @ 8.4A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 26 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 670 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.7W (Ta), 88W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
IRF530STRRPBF FAQ
1.How can I place an order for IRF530STRRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF530STRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF530STRRPBF reliable?
The price and inventory of IRF530STRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF530STRRPBF is usually 5 days.
3.What payment methods are accepted for IRF530STRRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF530STRRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF530STRRPBF?
IRF530STRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF530STRRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF530STRRPBF?
For technical support, including IRF530STRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF530STRRPBF requirements.
6.How does Aetrix verify that IRF530STRRPBF is sourced from the original manufacturer or authorized distributors?
All IRF530STRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF530STRRPBF meets industry standards.
7.What is the process for return or replacement of IRF530STRRPBF?
All IRF530STRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF530STRRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF530STRRPBF part is unused and in its original packaging.
Return procedure for IRF530STRRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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