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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF540S

Name: IRF540S
Brand: Vishay Siliconix
SKU: IRF540S
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF540S

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF540S.pdf

Description:: MOSFET N-CH 100V 28A D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF540S from Vishay Siliconix is a 100 V, 28 A N-channel enhancement-mode power MOSFET in D2PAK (TO-263) package, featuring 0.077 Ω R_DS(on) at V_GS = 10 V, 72 nC total gate charge, and 175 °C maximum junction temperature - used as a main switch in DC-DC converters, motor drives, and power supplies.

For engineers reviewing the IRF540S datasheet, IRF540S pinout, IRF540S application, or IRF540S equivalent, key selection criteria include avalanche ruggedness (230 mJ single-pulse), fast switching (11 ns turn-on delay), surface-mount thermal performance (1.0 °C/W R_thJC), and PCB-mount power dissipation (3.7 W).

Technical Context

This third-generation power MOSFET employs planar V-groove silicon technology optimized for low conduction loss and high dv/dt immunity. Its design supports repetitive avalanche operation and integrates a robust body diode with 180–360 ns reverse recovery time and 1.3–2.8 μC Q_rr.

The device operates with gate threshold voltage of 2.0–4.0 V and exhibits stable R_DS(on) over temperature (0.13 V/°C V_DS tempco). Dynamic parameters-including C_iss = 1700 pF, C_oss = 560 pF, and C_rss = 120 pF-are specified at V_DS = 25 V and f = 1 MHz for hard-switching layout validation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports 48 V bus systems with 2× safety margin against transients
R_DS(on) @ V_GS = 10 V	0.077 Ω - enables ≤2.2 W conduction loss at 17 A continuous drain current
Q_g	72 nC - determines gate driver power requirement and switching loss in PWM stages
I_D (T_C = 25 °C)	28 A - defines maximum continuous current under heatsink-cooled conditions
E_AS	230 mJ - allows unclamped inductive switching without external snubbers in relay/motor drive
R_thJC	1.0 °C/W - enables direct thermal path to heatsink via exposed drain pad in D2PAK
dv/dt rating	5.5 V/ns - ensures noise-immune operation in high-speed half-bridge configurations

Pinout & Package

D2PAK (TO-263) surface-mount package with thermally enhanced exposed drain pad; 3-pin configuration; JEDEC-compliant outline per document 91364.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control input	Receives 10 V logic-level drive; requires ≥2.0 V to initiate conduction; gate leakage ≤ ±100 nA
D (Drain)	High-side power terminal	Connected to exposed copper pad; carries full load current and serves as primary thermal path to PCB/heatsink
S (Source)	Reference node / return path	Provides common reference for gate drive; internal source inductance LS = 7.5 nH affects di/dt-induced ringing

Key Features

Feature	Design Value
Repetitive avalanche rated	Enables reliable operation under inductive load turn-off without external protection components
Dynamic dv/dt immunity	5.5 V/ns rating suppresses false turn-on in high-noise bridge circuits and motor inverters
175 °C operating temperature	Supports extended thermal margin in sealed enclosures or high-ambient industrial environments
Fast switching with low Q_gd/Q_g	Q_gd = 32 nC / Q_g = 72 nC ratio improves Miller immunity and reduces switching transition time
Surface-mount D2PAK package	Delivers 150 W case dissipation and 3.7 W PCB-mount capability-ideal for space-constrained power stages

Applications

DC-DC Buck Converter	Brushed DC Motor Drive
Use Scenario: Primary high-side switch in 12–48 V input, 3–24 V output synchronous buck regulator. IC Role / Device Role / Timing Role: Main power switch controlling energy transfer into output inductor; duty-cycle modulated at 100–500 kHz. Use Value: Low R_DS(on) minimizes conduction loss; 72 nC Q_g enables efficient gate driving with standard 1-A drivers.	Use Scenario: H-bridge leg switch for bidirectional control of 24 V brushed motors up to 20 A peak. IC Role / Device Role / Timing Role: High-current quadrant switch enabling forward/reverse and brake modes; operated with PWM at 1–20 kHz. Use Value: Repetitive avalanche rating absorbs inductive kickback during PWM off-time; 175 °C T_J sustains burst-load operation.
AC-DC SMPS Secondary Side	Industrial Power Supply OR-ing
Use Scenario: Synchronous rectifier in LLC resonant converter secondary stage delivering 12 V/20 A. IC Role / Device Role / Timing Role: Low-loss replacement for Schottky diode; driven by transformer-coupled gate signal synchronized to primary. Use Value: 0.077 Ω R_DS(on) cuts conduction loss by >40% vs. 40 V Schottky; body diode t_rr = 180–360 ns avoids cross-conduction.	Use Scenario: OR-ing FET in redundant 48 V telecom power system with hot-swap capability. IC Role / Device Role / Timing Role: Back-to-back configured MOSFET providing reverse-current blocking and low-forward-drop power path. Use Value: 100 V V_DS withstands double-bus transients; 28 A I_D supports parallel operation; low Q_g enables fast fault isolation.

DC-DC Buck Converter

Brushed DC Motor Drive

Use Scenario: Primary high-side switch in 12–48 V input, 3–24 V output synchronous buck regulator.

IC Role / Device Role / Timing Role: Main power switch controlling energy transfer into output inductor; duty-cycle modulated at 100–500 kHz.

Use Value: Low R_DS(on) minimizes conduction loss; 72 nC Q_g enables efficient gate driving with standard 1-A drivers.

Use Scenario: H-bridge leg switch for bidirectional control of 24 V brushed motors up to 20 A peak.

IC Role / Device Role / Timing Role: High-current quadrant switch enabling forward/reverse and brake modes; operated with PWM at 1–20 kHz.

Use Value: Repetitive avalanche rating absorbs inductive kickback during PWM off-time; 175 °C T_J sustains burst-load operation.

AC-DC SMPS Secondary Side

Industrial Power Supply OR-ing

Use Scenario: Synchronous rectifier in LLC resonant converter secondary stage delivering 12 V/20 A.

IC Role / Device Role / Timing Role: Low-loss replacement for Schottky diode; driven by transformer-coupled gate signal synchronized to primary.

Use Value: 0.077 Ω R_DS(on) cuts conduction loss by >40% vs. 40 V Schottky; body diode t_rr = 180–360 ns avoids cross-conduction.

Use Scenario: OR-ing FET in redundant 48 V telecom power system with hot-swap capability.

IC Role / Device Role / Timing Role: Back-to-back configured MOSFET providing reverse-current blocking and low-forward-drop power path.

Use Value: 100 V V_DS withstands double-bus transients; 28 A I_D supports parallel operation; low Q_g enables fast fault isolation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP100N10F7	100 V, 100 A, R_DS(on) = 0.0075 Ω @ 10 V, Q_g = 110 nC, TO-220 package	Higher current rating but larger footprint and higher gate charge; no D2PAK thermal pad	Prefer when board space allows TO-220 and >50 A peak current is required
IXTP120N10T	100 V, 120 A, R_DS(on) = 0.0065 Ω @ 10 V, Q_g = 132 nC, TO-220 package	Lower on-resistance but significantly higher Q_g; not surface-mount; lacks avalanche rating	Choose only if ultra-low conduction loss dominates and avalanche ruggedness is not needed

Compared with STP100N10F7 and IXTP120N10T, the IRF540S offers superior surface-mount thermal management via its D2PAK drain pad, lower gate charge for faster switching, and verified repetitive avalanche capability-making it preferred for compact, rugged, medium-power designs where PCB area and reliability are critical.

Availability

IRF540S is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, and industrial power supplies requiring stable component supply, RoHS-compliant sourcing, and long-term production continuity.

Supply support for IRF540S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRF540S belongs to Vishay's third-generation power MOSFET family engineered for optimal balance of low R_DS(on), fast switching, and rugged avalanche performance in surface-mount power conversion systems.

FAQ

What is the maximum continuous drain current for IRF540S at 100 °C case temperature?

The IRF540S supports 20 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the D2PAK package and must be validated with actual PCB layout and heatsinking. The IRF540S maintains safe operation within its SOA curve up to this current when ambient and thermal resistance conditions are met.

Does IRF540S have a qualified avalanche rating, and what does it mean for circuit design?

Yes, the IRF540S is repetitively avalanche rated with E_AS = 230 mJ (single-pulse) and E_AR = 15 mJ (repetitive). This means the IRF540S can safely absorb inductive energy during switching transitions without external snubbers-critical in relay drivers, motor controls, and flyback converters. Designers may eliminate clamping diodes or RC networks where IRF540S operates within its avalanche SOA limits.

What is the gate threshold voltage range for IRF540S, and how does it affect drive requirements?

The IRF540S has a gate threshold voltage V_GS(th) of 2.0–4.0 V at I_D = 250 μA. This range confirms logic-level compatibility with 3.3 V and 5 V microcontrollers when used with appropriate gate resistors. However, full enhancement requires V_GS ≥ 10 V to achieve rated R_DS(on) = 0.077 Ω; the IRF540S must be driven to 10 V for minimal conduction loss in high-current applications.

Can IRF540S be paralleled, and what design considerations apply?

Yes, the IRF540S is designed for ease of paralleling due to its positive temperature coefficient of R_DS(on), which promotes current sharing. Key considerations include matched gate drive impedance, symmetrical PCB layout, and Kelvin-source routing to minimize loop inductance. The IRF540S body diode characteristics and low Q_gd/Q_g ratio further reduce risk of dynamic imbalance during switching transitions.

What is the thermal resistance from junction to case (R_thJC) for IRF540S, and how is it measured?

The IRF540S has a maximum junction-to-case thermal resistance R_thJC of 1.0 °C/W, measured from the silicon die to the exposed drain pad surface of the D2PAK package. This value assumes ideal thermal interface (e.g., soldered copper pour or heatsink contact) and is critical for calculating junction temperature rise under load. The IRF540S achieves this low R_thJC via direct die-to-pad metallization, making it highly effective in thermally constrained layouts.

IRF540S Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 28A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 77mOhm @ 17A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 72 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1700 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.7W (Ta), 150W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

IRF540S FAQ

1.How can I place an order for IRF540S through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF540S on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF540S reliable?

The price and inventory of IRF540S are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF540S is usually 5 days.

3.What payment methods are accepted for IRF540S?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF540S transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF540S?

IRF540S orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF540S order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF540S?

For technical support, including IRF540S datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF540S requirements.

6.How does Aetrix verify that IRF540S is sourced from the original manufacturer or authorized distributors?

All IRF540S products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF540S meets industry standards.

7.What is the process for return or replacement of IRF540S?

All IRF540S units undergo pre-shipment inspection (PSI). If there is an issue with IRF540S, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF540S part is unused and in its original packaging.

Return procedure for IRF540S:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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