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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF610S

Name: IRF610S
Brand: Vishay Siliconix
SKU: IRF610S
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF610S

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF610S.pdf

Description:: MOSFET N-CH 200V 3.3A D2PAK

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Product details

Overview

IRF610S from Vishay Siliconix is a 200 V, 3.3 A N-channel enhancement-mode power MOSFET in D2PAK (TO-263) surface-mount package, featuring 1.5 Ω R_DS(on) at V_GS = 10 V, 8.2 nC total gate charge, and repetitive avalanche rating-designed for high-voltage DC-DC converters, motor control drivers, and industrial switching power supplies.

For engineers reviewing the IRF610S datasheet, IRF610S pinout, IRF610S application, or IRF610S equivalent, this page delivers verified electrical parameters, thermal derating behavior, diode recovery characteristics, and real-world mounting guidance for PCB-level thermal management and fast-switching layout.

Technical Context

This third-generation power MOSFET uses planar silicon technology optimized for ruggedness and cost-effective high-voltage operation. Its 200 V V_DS rating supports off-line SMPS and AC-input circuits, while its 3.3 A continuous drain current at T_C = 25 °C and 2.1 A at 100 °C reflects thermal-limited conduction capability under standard heatsink conditions.

The device integrates a fast-recovery body diode with t_rr = 150–310 ns and Q_rr = 0.60–1.4 μC, enabling efficient hard-switched topologies. Its dynamic dV/dt rating of 5.0 V/ns and unclamped inductive switching capability (E_AS = 64 mJ) support reliable operation in inductive load environments without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200 V - supports 170 VAC rectified input rails with margin for surge and ringing
R_DS(on)	1.5 Ω @ V_GS = 10 V - determines conduction loss in low-duty-cycle, high-V_DS applications
Q_g	8.2 nC - defines gate drive energy and switching speed with 24 Ω gate resistor
I_D (continuous)	3.3 A @ T_C = 25 °C - usable current level with direct case heatsinking or copper pour
E_AS	64 mJ - enables single-pulse inductive energy absorption without failure
t_r/t_f	17 ns / 8.9 ns - supports >1 MHz switching in resonant or ZVS designs when properly driven
V_GS(th)	2.0–4.0 V - ensures turn-on with standard 5 V logic-level gate drivers

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration (G, D, S) with drain tab electrically and thermally tied to the die backside.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives voltage-controlled signal; requires <100 nA leakage handling and 8.2 nC charge for full enhancement
D (Drain)	High-side power terminal	Connected to exposed metal tab; carries full load current and dissipates heat into PCB copper or heatsink
S (Source)	Reference and return path	Serves as local ground reference for gate drive; internal source inductance (L_S = 7.5 nH) affects switching waveform fidelity

Key Features

Feature	Design Value
Repetitive avalanche rated	Supports 3.3 A I_AR and 3.6 mJ E_AR under controlled pulse conditions-enables robustness in flyback and boost converter primary switches
Dynamic dV/dt rating	5.0 V/ns - prevents false turn-on during high-slew-rate voltage transients across drain-source
Fast switching	td(on) = 8.2 ns, tr = 17 ns - reduces switching losses in high-frequency SMPS above 200 kHz
Low R_DS(on) × Q_g figure-of-merit	12.3 Ω·nC - balances conduction and switching loss trade-off for medium-power 200 V applications
Surface mount (D2PAK)	Enables automated assembly and high-power density layouts with thermal pad soldered to large copper area

Applications

Industrial Motor Drives	Off-Line SMPS
Use Scenario: Half-bridge gate driver stage controlling 24–48 V brushed DC motors in factory automation systems. IC Role / Device Role / Timing Role: High-side N-channel switch in discrete H-bridge; handles bidirectional current up to 3.3 A with body diode freewheeling. Use Value: Repetitive avalanche rating absorbs inductive kickback during PWM commutation without external clamping.	Use Scenario: Primary-side switch in 15–30 W universal-input AC-DC flyback converter for industrial sensors. IC Role / Device Role / Timing Role: Main power switch operating at 65–100 kHz; turns on/off under high V_DS stress with minimal conduction loss. Use Value: 200 V V_DS provides 50 V margin over 375 V DC bus, ensuring reliability during line surges and startup overshoot.
LED Constant-Current Drivers	DC-DC Buck Converters
Use Scenario: High-voltage LED string driver for architectural lighting with 80–120 V output. IC Role / Device Role / Timing Role: Low-side switch in buck-boost topology; regulates current through 10–20 series LEDs. Use Value: Fast body diode recovery (t_rr ≤ 310 ns) minimizes reverse recovery loss and EMI during discontinuous conduction mode.	Use Scenario: Step-down regulator converting 48 V telecom supply to 12 V for fan controllers and interface modules. IC Role / Device Role / Timing Role: Synchronous rectifier replacement in non-isolated buck; operates with gate drive referenced to source. Use Value: 1.5 Ω R_DS(on) limits conduction loss to <1.5 W at 3.3 A, enabling compact thermal design on 1" FR-4 PCB.

Industrial Motor Drives

Off-Line SMPS

Use Scenario: Half-bridge gate driver stage controlling 24–48 V brushed DC motors in factory automation systems.

IC Role / Device Role / Timing Role: High-side N-channel switch in discrete H-bridge; handles bidirectional current up to 3.3 A with body diode freewheeling.

Use Value: Repetitive avalanche rating absorbs inductive kickback during PWM commutation without external clamping.

Use Scenario: Primary-side switch in 15–30 W universal-input AC-DC flyback converter for industrial sensors.

IC Role / Device Role / Timing Role: Main power switch operating at 65–100 kHz; turns on/off under high V_DS stress with minimal conduction loss.

Use Value: 200 V V_DS provides 50 V margin over 375 V DC bus, ensuring reliability during line surges and startup overshoot.

LED Constant-Current Drivers

DC-DC Buck Converters

Use Scenario: High-voltage LED string driver for architectural lighting with 80–120 V output.

IC Role / Device Role / Timing Role: Low-side switch in buck-boost topology; regulates current through 10–20 series LEDs.

Use Value: Fast body diode recovery (t_rr ≤ 310 ns) minimizes reverse recovery loss and EMI during discontinuous conduction mode.

Use Scenario: Step-down regulator converting 48 V telecom supply to 12 V for fan controllers and interface modules.

IC Role / Device Role / Timing Role: Synchronous rectifier replacement in non-isolated buck; operates with gate drive referenced to source.

Use Value: 1.5 Ω R_DS(on) limits conduction loss to <1.5 W at 3.3 A, enabling compact thermal design on 1" FR-4 PCB.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP20NM20	200 V, 20 A, R_DS(on) = 0.22 Ω, Q_g = 25 nC, TO-220 package	Higher current rating but larger footprint and higher gate drive demand	Preferred where board space allows TO-220 and higher peak current is needed
SiHF610S	Identical electrical specs; RoHS-compliant, halogen-free variant with GE3 suffix	No functional difference; differs only in material compliance and tape/reel packaging	Drop-in replacement for IRF610S in new designs requiring lead-free/halogen-free compliance

Compared with STP20NM20, IRF610S offers lower gate charge and smaller D2PAK footprint but reduced current capacity; compared with SiHF610S, IRF610S shares identical performance and pinout but uses Pb-containing terminations per Vishay's ordering matrix.

Availability

IRF610S is available at Aetrix Electronics and suitable for industrial motor drives, off-line SMPS, and LED constant-current drivers requiring stable component supply and long-term manufacturing continuity.

Supply support for IRF610S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, efficiency, and manufacturability.

The IRF610S belongs to Vishay's third-generation power MOSFET family, engineered for cost-sensitive, medium-power high-voltage switching applications where reliability under repetitive stress and ease of PCB thermal management are critical.

FAQ

What is the maximum junction temperature rating for the IRF610S?

The IRF610S has an operating junction and storage temperature range of –55 °C to +150 °C. Absolute maximum ratings specify TJ ≤ 150 °C under steady-state or pulsed conditions; exceeding this limit risks parametric shift or catastrophic failure. Thermal design must ensure R_thJC ≤ 3.5 °C/W and appropriate PCB copper area to maintain safe TJ during continuous 3.3 A operation.

Does the IRF610S have a built-in body diode, and what are its key recovery parameters?

Yes, the IRF610S integrates a parasitic body diode inherent to its vertical N-channel structure. Key recovery parameters include reverse recovery time t_rr = 150–310 ns and reverse recovery charge Q_rr = 0.60–1.4 μC at TJ = 25 °C, IF = 3.3 A, and dI/dt = 100 A/μs. These values directly impact switching loss and EMI in hard-switched topologies using the body diode for freewheeling.

What is the gate threshold voltage range for the IRF610S, and how does it affect drive compatibility?

The IRF610S gate threshold voltage V_GS(th) is specified from 2.0 V to 4.0 V at V_DS = V_GS and I_D = 250 μA. This range ensures reliable turn-on with standard 5 V logic-level drivers while maintaining noise immunity against spurious gate excursions. Full enhancement to R_DS(on) = 1.5 Ω requires V_GS ≥ 10 V, making the IRF610S compatible with both 5 V and 12 V gate drive systems.

Can the IRF610S be used in avalanche mode, and what are the limits?

Yes, the IRF610S is explicitly rated for repetitive avalanche operation with I_AR = 3.3 A and E_AR = 3.6 mJ per pulse, and single-pulse avalanche energy E_AS = 64 mJ. These ratings assume pulse width limited by maximum junction temperature (see Fig. 11), with test conditions defined as V_DD = 50 V, L = 8.8 mH, R_g = 25 Ω, and starting T_J = 25 °C. Operation beyond these limits requires derating and thermal validation.

What PCB layout recommendations apply to the IRF610S D2PAK package?

Vishay recommends a minimum 0.420" × 0.355" (10.67 mm × 9.02 mm) copper pad for the drain tab of the IRF610S D2PAK package, with thermal vias to inner or back-layer planes. The datasheet specifies 1" square FR-4 PCB for 3.0 W dissipation, and notes that internal drain/source inductances (L_D = 4.5 nH, L_S = 7.5 nH) require short, wide traces to minimize ringing and overshoot during switching transitions.

IRF610S Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 3.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.5Ohm @ 2A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 8.2 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 140 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3W (Ta), 36W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

IRF610S FAQ

1.How can I place an order for IRF610S through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF610S on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF610S reliable?

The price and inventory of IRF610S are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF610S is usually 5 days.

3.What payment methods are accepted for IRF610S?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF610S transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF610S?

IRF610S orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF610S order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF610S?

For technical support, including IRF610S datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF610S requirements.

6.How does Aetrix verify that IRF610S is sourced from the original manufacturer or authorized distributors?

All IRF610S products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF610S meets industry standards.

7.What is the process for return or replacement of IRF610S?

All IRF610S units undergo pre-shipment inspection (PSI). If there is an issue with IRF610S, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF610S part is unused and in its original packaging.

Return procedure for IRF610S:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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