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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF610SPBF

Name: IRF610SPBF
Brand: Vishay Siliconix
SKU: IRF610SPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF610SPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF610SPBF.pdf

Description:: MOSFET N-CH 200V 3.3A D2PAK

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Product details

Overview

IRF610SPBF from Vishay Siliconix is a 200 V, 3.3 A N-channel power MOSFET in D2PAK (TO-263) package, featuring 1.5 Ω R_DS(on) at V_GS = 10 V, 8.2 nC total gate charge, and repetitive avalanche rating-designed for high-voltage DC-DC converters, motor control snubbers, and AC solid-state relay drivers.

For engineers reviewing the IRF610SPBF datasheet, IRF610SPBF pinout, IRF610SPBF application, or IRF610SPBF equivalent, key selection criteria include its 200 V V_DS, 3.3 A continuous drain current at T_C = 25 °C, 64 mJ single-pulse avalanche energy, surface-mount D2PAK thermal performance, and fast switching with 8.2 ns turn-on delay.

Technical Context

This device belongs to Vishay's third-generation power MOSFET family optimized for ruggedness and cost-effective high-voltage switching. It integrates a low-inductance D2PAK package with internal source/drain inductances of 7.5 nH and 4.5 nH respectively, enabling stable operation under high dI/dt conditions up to 70 A/μs.

The IRF610SPBF supports unclamped inductive switching with validated 3.3 A repetitive avalanche current and 3.6 mJ energy per pulse. Its gate threshold voltage range (2.0–4.0 V) and ±20 V gate-source rating allow compatibility with standard 10 V logic-level drive while maintaining robust overvoltage protection.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200 V - supports primary-side switching in offline SMPS up to 170 V RMS input.
R_DS(on)	1.5 Ω @ V_GS = 10 V - limits conduction loss to ≤10 W at 2.6 A continuous drain current.
Q_g	8.2 nC - enables efficient 100 kHz switching with <1 W gate drive loss using 10 Ω resistor.
I_D (continuous)	3.3 A @ T_C = 25 °C - delivers 36 W power dissipation capability with heatsink mounting.
E_AS	64 mJ - sustains single-pulse inductive energy without failure in flyback snubber circuits.
dV/dt Rating	5.0 V/ns - ensures immunity to parasitic turn-on in high-noise industrial gate-drive environments.
T_J Range	−55 to +150 °C - qualified for extended-temperature industrial and automotive under-hood auxiliary loads.

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain tab for thermal conduction and mechanical anchoring; 3-pin configuration (G-D-S), 10.67 mm × 9.65 mm footprint, 4.83 mm height, JEDEC-compliant outline.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level signal; 100 nA leakage ensures low standby power in always-on systems.
D (Drain)	High-side power terminal	Exposed metal tab electrically connected to drain; provides primary thermal path to PCB copper pour or heatsink.
S (Source)	Reference node / return path	Low-inductance connection point for current sensing and gate drive reference; 7.5 nH internal inductance minimizes ringing during hard switching.

Key Features

Feature	Design Value
Repetitive avalanche rated	Validated for 3.3 A, 3.6 mJ pulses - eliminates need for external clamping in inductive load commutation.
Dynamic dV/dt rating	5.0 V/ns - prevents false triggering in high-slew-rate gate driver layouts near noisy power stages.
Fast switching	8.2 ns t_d(on), 8.9 ns t_f - reduces transition losses in 100–500 kHz DC-DC topologies.
Low Q_gd/Q_g ratio	4.5/8.2 = 55% - improves Miller immunity and enables stable paralleling without gate resistors.
Surface mount	D2PAK footprint compatible with automated reflow assembly - supports high-volume production without through-hole drilling.

Applications

AC Solid-State Relay Driver	Offline Flyback Snubber
Use Scenario: Driving TRIAC/SCR gates in industrial AC load switching with zero-crossing isolation. IC Role / Device Role / Timing Role: High-voltage level-shifting switch controlling gate trigger pulse timing relative to AC phase. Use Value: 200 V V_DS withstands peak line transients; 3.3 A I_D supports multi-TRIAC fan-out without derating.	Use Scenario: Clamping voltage spikes across transformer primary in discontinuous-conduction-mode flyback converters. IC Role / Device Role / Timing Role: Active clamp switch absorbing leakage inductance energy during MOSFET turn-off. Use Value: 64 mJ E_AS handles worst-case unclamped inductive kick; 1.5 Ω R_DS(on) minimizes clamp conduction loss.
DC Motor Brake Circuit	High-Voltage LED String Switch
Use Scenario: Rapidly dissipating stored kinetic energy in brushed DC motors during emergency stop. IC Role / Device Role / Timing Role: Low-impedance freewheeling path activated synchronously with PWM shutdown. Use Value: Repetitive avalanche rating allows repeated 3.3 A braking pulses without degradation; D2PAK thermal mass sustains short bursts.	Use Scenario: On/off control of 100–180 V LED strings in architectural lighting and signage. IC Role / Device Role / Timing Role: High-side constant-current switch regulating string current via external sense resistor. Use Value: 200 V V_DS accommodates full string voltage plus safety margin; 1.5 Ω R_DS(on) enables precise current regulation below 1% error.

AC Solid-State Relay Driver

Offline Flyback Snubber

Use Scenario: Driving TRIAC/SCR gates in industrial AC load switching with zero-crossing isolation.

IC Role / Device Role / Timing Role: High-voltage level-shifting switch controlling gate trigger pulse timing relative to AC phase.

Use Value: 200 V V_DS withstands peak line transients; 3.3 A I_D supports multi-TRIAC fan-out without derating.

Use Scenario: Clamping voltage spikes across transformer primary in discontinuous-conduction-mode flyback converters.

IC Role / Device Role / Timing Role: Active clamp switch absorbing leakage inductance energy during MOSFET turn-off.

Use Value: 64 mJ E_AS handles worst-case unclamped inductive kick; 1.5 Ω R_DS(on) minimizes clamp conduction loss.

DC Motor Brake Circuit

High-Voltage LED String Switch

Use Scenario: Rapidly dissipating stored kinetic energy in brushed DC motors during emergency stop.

IC Role / Device Role / Timing Role: Low-impedance freewheeling path activated synchronously with PWM shutdown.

Use Value: Repetitive avalanche rating allows repeated 3.3 A braking pulses without degradation; D2PAK thermal mass sustains short bursts.

Use Scenario: On/off control of 100–180 V LED strings in architectural lighting and signage.

IC Role / Device Role / Timing Role: High-side constant-current switch regulating string current via external sense resistor.

Use Value: 200 V V_DS accommodates full string voltage plus safety margin; 1.5 Ω R_DS(on) enables precise current regulation below 1% error.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP2NK60ZFP	600 V V_DS, 2 A I_D, 10 Ω R_DS(on), TO-220FP package	Higher voltage rating but lower current and higher on-resistance; requires through-hole mounting	Select when >300 V transient immunity is required and board space permits larger through-hole footprint.
IXTP2N50D2	500 V V_DS, 2 A I_D, 4.5 Ω R_DS(on), TO-220AB package	Higher voltage and faster switching (Q_g = 5.5 nC), but lower avalanche energy (E_AS = 25 mJ)	Prefer for high-frequency resonant converters where voltage margin outweighs avalanche robustness needs.

Compared with STP2NK60ZFP and IXTP2N50D2, the IRF610SPBF offers optimal balance of 200 V rating, 3.3 A current, 1.5 Ω on-resistance, and 64 mJ avalanche energy in a surface-mount D2PAK-making it uniquely suited for cost-sensitive, medium-voltage industrial switching where thermal performance and layout simplicity are critical.

Availability

IRF610SPBF is available at Aetrix Electronics and suitable for high-voltage DC-DC converters, AC solid-state relay drivers, and motor brake circuits requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRF610SPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix designs discrete semiconductors with emphasis on power efficiency, ruggedness, and manufacturability for industrial, computing, and automotive markets.

The IRF610SPBF belongs to Vishay's third-generation power MOSFET product line engineered for high-voltage switching applications demanding reliable avalanche performance, low gate charge, and surface-mount thermal scalability.

FAQ

What is the maximum continuous drain current for IRF610SPBF at 100 °C case temperature?

The IRF610SPBF supports 2.1 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal resistance limitations of the D2PAK package and must be verified against actual PCB copper area and airflow conditions in the final design. The IRF610SPBF maintains safe operation within its 150 °C maximum junction temperature limit under these conditions.

Does IRF610SPBF have a built-in body diode, and what are its key parameters?

Yes, the IRF610SPBF integrates a body diode with 3.3 A continuous forward current rating, 2.0 V forward voltage at 3.3 A and 25 °C, and 150–310 ns reverse recovery time. Its 0.60–1.4 μC reverse recovery charge enables use in synchronous rectification and freewheeling paths. The IRF610SPBF body diode is rated for repetitive operation within the device's thermal limits and avalanche specifications.

Can IRF610SPBF be used in parallel configurations, and what design considerations apply?

Yes, the IRF610SPBF is designed for ease of paralleling due to its positive temperature coefficient of R_DS(on) and low Q_gd/Q_g ratio (55%). To ensure current sharing, use matched gate resistors (≤10 Ω), minimize loop inductance with symmetrical PCB routing, and maintain uniform thermal coupling. The IRF610SPBF's D2PAK package facilitates thermal balancing across multiple devices mounted on shared copper pours.

What is the gate threshold voltage range for IRF610SPBF, and how does it affect drive requirements?

IRF610SPBF has a gate threshold voltage range of 2.0 V to 4.0 V at I_D = 250 μA. This allows reliable turn-on with standard 5 V or 10 V logic-level drivers while providing noise margin against spurious triggering. For full enhancement, V_GS ≥ 10 V is required to achieve the specified 1.5 Ω R_DS(on); the IRF610SPBF is not a logic-level MOSFET and requires appropriate gate drive voltage headroom.

Is IRF610SPBF RoHS-compliant, and what does the 'PbF' suffix indicate?

Yes, IRF610SPBF is lead (Pb)-free and RoHS-compliant, as confirmed by Vishay's material categorization documentation. The 'PbF' suffix explicitly denotes lead-free termination finish per JEDEC J-STD-609. The IRF610SPBF meets exemption 7a for high-melting-temperature solder alloys and carries full RoHS-6 compliance certification with halogen-free packaging per Vishay specification 99912.

IRF610SPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 3.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.5Ohm @ 2A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 8.2 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 140 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3W (Ta), 36W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

IRF610SPBF FAQ

1.How can I place an order for IRF610SPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF610SPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF610SPBF reliable?

The price and inventory of IRF610SPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF610SPBF is usually 5 days.

3.What payment methods are accepted for IRF610SPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF610SPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF610SPBF?

IRF610SPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF610SPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF610SPBF?

For technical support, including IRF610SPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF610SPBF requirements.

6.How does Aetrix verify that IRF610SPBF is sourced from the original manufacturer or authorized distributors?

All IRF610SPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF610SPBF meets industry standards.

7.What is the process for return or replacement of IRF610SPBF?

All IRF610SPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF610SPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF610SPBF part is unused and in its original packaging.

Return procedure for IRF610SPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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