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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF610STRLPBF

Name: IRF610STRLPBF
Brand: Vishay Siliconix
SKU: IRF610STRLPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF610STRLPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF610STRLPBF.pdf

Description:: MOSFET N-CH 200V 3.3A D2PAK

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Product details

Overview

IRF610STRLPBF from Vishay Siliconix is a 200 V, 3.3 A N-channel surface-mount power MOSFET in D2PAK (TO-263) package, featuring 1.5 Ω R_DS(on) at V_GS = 10 V, 8.2 nC total gate charge, and repetitive avalanche rating-designed for high-voltage DC-DC converters, motor control stages, and industrial power supplies.

For engineers reviewing the IRF610STRLPBF datasheet, IRF610STRLPBF pinout, IRF610STRLPBF application, or IRF610STRLPBF equivalent, key selection criteria include its 200 V drain-source breakdown voltage, 3.3 A continuous drain current at T_C = 25 °C, 36 W maximum power dissipation, dV/dt ruggedness of 5.0 V/ns, and body diode reverse recovery time of 150–310 ns.

Technical Context

This N-channel enhancement-mode MOSFET uses planar silicon technology optimized for high-voltage switching with low conduction loss and robust unclamped inductive switching capability. Its 1.5 Ω on-resistance at 10 V gate drive enables efficient operation in 100–200 V bus applications, while the 8.2 nC gate charge supports fast turn-on/turn-off with moderate gate driver strength.

The device integrates a co-packaged body diode with 2.0 V forward voltage at 3.3 A and 150–310 ns reverse recovery time, enabling synchronous rectification support and flyback snubberless designs. Thermal design is enabled by 3.5 °C/W junction-to-case resistance and validated PCB-mount derating to 3.0 W at 25 °C ambient.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200 V - supports 170 V DC bus systems with 15 % margin for transients
R_DS(on)	1.5 Ω @ V_GS = 10 V - yields ≤ 16.5 W conduction loss at 3.3 A full-load current
I_D (continuous)	3.3 A @ T_C = 25 °C - defines thermal limit for heatsink-free operation on 1" FR-4 PCB
Q_g	8.2 nC - requires ≤ 0.82 mA average gate current for 10 kHz switching at 10 V drive
E_AS	64 mJ - withstands single-pulse inductive energy up to 64 mJ without failure
dV/dt rating	5.0 V/ns - ensures reliable operation in high-dV/dt environments like SMPS primary switches
T_J range	−55 to +150 °C - qualified for industrial and extended-temperature embedded power stages

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration (G, D, S) with drain tab electrically and thermally connected to the die backside.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Accepts 10 V logic-level drive; 1.8 nC gate-source charge enables fast turn-on with minimal Miller effect
D (Drain)	High-side power terminal	Connected to exposed copper pad; carries full load current and dissipates heat directly to PCB copper pour
S (Source)	Reference and return path	Common node for gate drive return and current sensing; internal source inductance 7.5 nH affects high-speed switching ringing

Key Features

Feature	Design Value
Repetitive avalanche rated	3.3 A I_AR, 3.6 mJ E_AR - enables reliable operation under inductive load interruption without external clamping
Dynamic dV/dt rating	5.0 V/ns - prevents spurious turn-on during high-slew-rate voltage transitions in half-bridge topologies
Fast switching	8.2 ns t_d(on), 17 ns t_r, 14 ns t_d(off), 8.9 ns t_f - reduces switching losses in 50–200 kHz SMPS designs
Low Q_gd/Q_gs ratio	4.5 nC / 1.8 nC = 2.5 - improves hard-switching immunity and reduces Miller plateau duration
RoHS-compliant & halogen-free	Lead (Pb)-free and halogen-free construction per Vishay specification - meets IPC-J-STD-609 Class 1

Applications

Switch-Mode Power Supply (SMPS)	DC Motor Drive Stage
Use Scenario: Primary-side switch in 100–200 V input offline flyback or forward converter operating at 60–150 kHz. IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer via transformer primary winding; operates in hard-switched PWM mode. Use Value: 200 V V_DS rating accommodates 170 V rectified mains with safety margin; 1.5 Ω R_DS(on) limits conduction loss to < 17 W at 3.3 A peak current.	Use Scenario: Low-side or H-bridge switch driving brushed DC motors in industrial actuators or HVAC blowers. IC Role / Device Role / Timing Role: Unidirectional or bidirectional power switch controlling motor current direction and magnitude; commutated at ≤ 20 kHz. Use Value: Repetitive avalanche rating absorbs inductive kickback during PWM turn-off; 3.3 A continuous current supports 25 W mechanical output at 85 % efficiency.
LED Driver Power Stage	Industrial Solenoid Control
Use Scenario: Constant-current buck regulator stage powering high-brightness LED strings from 100–150 V DC bus. IC Role / Device Role / Timing Role: Synchronous rectifier or main switch regulating LED current via duty-cycle control; operates in continuous conduction mode. Use Value: Fast 17 ns rise time minimizes switching loss during high-frequency dimming; body diode V_SD = 2.0 V ensures low forward drop during freewheeling.	Use Scenario: On/off control of 24–48 V solenoid valves in PLC I/O modules or fluid control systems. IC Role / Device Role / Timing Role: High-side or low-side power switch delivering pulsed current to inductive solenoid coil; driven by microcontroller GPIO. Use Value: 64 mJ single-pulse avalanche energy safely clamps coil flyback without external TVS; 10 A pulsed drain current handles 5× inrush surge.

Switch-Mode Power Supply (SMPS)

DC Motor Drive Stage

Use Scenario: Primary-side switch in 100–200 V input offline flyback or forward converter operating at 60–150 kHz.

IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer via transformer primary winding; operates in hard-switched PWM mode.

Use Value: 200 V V_DS rating accommodates 170 V rectified mains with safety margin; 1.5 Ω R_DS(on) limits conduction loss to < 17 W at 3.3 A peak current.

Use Scenario: Low-side or H-bridge switch driving brushed DC motors in industrial actuators or HVAC blowers.

IC Role / Device Role / Timing Role: Unidirectional or bidirectional power switch controlling motor current direction and magnitude; commutated at ≤ 20 kHz.

Use Value: Repetitive avalanche rating absorbs inductive kickback during PWM turn-off; 3.3 A continuous current supports 25 W mechanical output at 85 % efficiency.

LED Driver Power Stage

Industrial Solenoid Control

Use Scenario: Constant-current buck regulator stage powering high-brightness LED strings from 100–150 V DC bus.

IC Role / Device Role / Timing Role: Synchronous rectifier or main switch regulating LED current via duty-cycle control; operates in continuous conduction mode.

Use Value: Fast 17 ns rise time minimizes switching loss during high-frequency dimming; body diode V_SD = 2.0 V ensures low forward drop during freewheeling.

Use Scenario: On/off control of 24–48 V solenoid valves in PLC I/O modules or fluid control systems.

IC Role / Device Role / Timing Role: High-side or low-side power switch delivering pulsed current to inductive solenoid coil; driven by microcontroller GPIO.

Use Value: 64 mJ single-pulse avalanche energy safely clamps coil flyback without external TVS; 10 A pulsed drain current handles 5× inrush surge.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF620STRLPBF	200 V V_DS, 4.5 A I_D, 1.2 Ω R_DS(on), 11.5 nC Q_g	Higher current and lower on-resistance but higher gate charge increases driver demand	Select when ≥ 4 A continuous current or < 1.2 Ω R_DS(on) is required; verify gate driver can supply 11.5 nC at target frequency
STP20NM60FD	600 V V_DS, 20 A I_D, 0.3 Ω R_DS(on), 45 nC Q_g, SuperFET II	Higher voltage rating and current capacity but significantly higher gate charge and cost	Select only if 600 V blocking or > 10 A current is needed; not drop-in due to different voltage class and layout requirements

Compared with IRF610STRLPBF, IRF620STRLPBF offers higher current and lower conduction loss but demands more gate drive energy, while STP20NM60FD targets much higher voltage applications and introduces substantial gate drive overhead-neither is pin-compatible, and both require PCB layout review for thermal and routing changes.

Availability

IRF610STRLPBF is available at Aetrix Electronics and suitable for industrial power supplies, motor control circuits, and LED driver designs requiring stable component supply and long-term production continuity.

Supply support for IRF610STRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRF610STRLPBF belongs to Vishay's third-generation high-voltage power MOSFET family, engineered for rugged switching performance, low on-resistance, and ease of paralleling in space-constrained surface-mount power systems.

FAQ

What is the maximum continuous drain current rating for IRF610STRLPBF at 100 °C case temperature?

The IRF610STRLPBF has a continuous drain current rating of 2.1 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package under sustained high-temperature operation and must be used with appropriate PCB copper area and airflow to maintain junction temperature below 150 °C. The IRF610STRLPBF datasheet confirms this value applies under steady-state conditions with proper heatsinking.

Does IRF610STRLPBF support logic-level gate drive?

No, IRF610STRLPBF is not a logic-level MOSFET. Its gate-threshold voltage ranges from 2.0 V to 4.0 V, and it is characterized for R_DS(on) at V_GS = 10 V. For reliable enhancement-mode operation and low on-resistance, a minimum 10 V gate drive is required. Driving IRF610STRLPBF with 3.3 V or 5 V logic signals will result in high R_DS(on) and excessive conduction loss. The IRF610STRLPBF datasheet explicitly specifies test conditions at V_GS = 10 V.

What is the thermal resistance from junction to case (R_thJC) for IRF610STRLPBF?

The maximum junction-to-case thermal resistance (R_thJC) for IRF610STRLPBF is 3.5 °C/W, as published in the Thermal Resistance Ratings table. This value assumes direct thermal contact between the exposed drain pad and a sufficiently large copper pour on the PCB. It enables calculation of junction temperature rise above case temperature using ΔT_JC = P_D × R_thJC. The IRF610STRLPBF thermal model is validated for D2PAK mounting per JEDEC standards.

Can IRF610STRLPBF be used in avalanche mode repeatedly?

Yes, IRF610STRLPBF is explicitly rated for repetitive avalanche operation with I_AR = 3.3 A and E_AR = 3.6 mJ, as stated in the Absolute Maximum Ratings table. This capability allows safe handling of inductive energy during switching transitions without external snubbers, provided pulse width and duty cycle remain within limits defined by junction temperature constraints. The IRF610STRLPBF datasheet includes Fig. 11 and associated notes confirming repetitive avalanche validation.

What is the body diode reverse recovery time (t_rr) for IRF610STRLPBF?

The body diode reverse recovery time (t_rr) for IRF610STRLPBF is specified as 150–310 ns at T_J = 25 °C, I_F = 3.3 A, and dI/dt = 100 A/μs. This parameter is critical for synchronous rectification and freewheeling applications where diode turn-off speed impacts switching loss and EMI. The IRF610STRLPBF datasheet lists t_rr in the Dynamic section of the Specifications table and provides typical curves in Fig. 7.

IRF610STRLPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 3.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.5Ohm @ 2A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 8.2 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 140 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3W (Ta), 36W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

IRF610STRLPBF FAQ

1.How can I place an order for IRF610STRLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF610STRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF610STRLPBF reliable?

The price and inventory of IRF610STRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF610STRLPBF is usually 5 days.

3.What payment methods are accepted for IRF610STRLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF610STRLPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF610STRLPBF?

IRF610STRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF610STRLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF610STRLPBF?

For technical support, including IRF610STRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF610STRLPBF requirements.

6.How does Aetrix verify that IRF610STRLPBF is sourced from the original manufacturer or authorized distributors?

All IRF610STRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF610STRLPBF meets industry standards.

7.What is the process for return or replacement of IRF610STRLPBF?

All IRF610STRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF610STRLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF610STRLPBF part is unused and in its original packaging.

Return procedure for IRF610STRLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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