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Vishay Siliconix IRF610STRRPBF
- Part No.:
- IRF610STRRPBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRF610STRRPBF.pdf
- Description:
- MOSFET N-CH 200V 3.3A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:7,589
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Product details
Overview
IRF610STRRPBF from Vishay Siliconix is a 200 V, 3.3 A N-channel power MOSFET in D2PAK (TO-263) surface-mount package, featuring 1.5 Ω RDS(on) at VGS = 10 V, 8.2 nC total gate charge, and repetitive avalanche rating - designed for high-voltage DC-DC converters, AC-DC front-end switches, and industrial motor control stages.
For engineers reviewing the IRF610STRRPBF datasheet, IRF610STRRPBF pinout, IRF610STRRPBF application, or IRF610STRRPBF equivalent, this page delivers verified electrical specs, thermal derating data, diode recovery characteristics, and real-world switching timing values measured under standardized test conditions (VDD = 100 V, ID = 3.3 A, Rg = 24 Ω).
Technical Context
This third-generation power MOSFET uses planar V-groove silicon technology optimized for ruggedness and fast switching. Its 200 V VDS rating supports off-line switch-mode power supplies up to 170 V RMS input, while its 3.3 A continuous drain current at TC = 25 °C enables compact high-side switching in flyback and forward topologies.
The device integrates a low-Qrr (0.60–1.4 μC) body diode with 150–310 ns reverse recovery time and 5.0 V/ns peak dV/dt immunity, enabling reliable operation in hard-switched inductive loads without external snubbers. Thermal resistance RthJC = 3.5 °C/W ensures efficient heat transfer to the PCB copper pour.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 200 V - supports 170 VRMS AC line inputs with 20 % margin for surge transients |
| RDS(on) | 1.5 Ω @ VGS = 10 V - limits conduction loss to ≤15 W at 3.3 A, enabling thermally constrained layouts |
| Qg | 8.2 nC - enables full turn-on with ≤100 ns delay using standard 1 A gate drivers |
| tr/tf | 17 ns / 8.9 ns - reduces switching losses below 100 kHz in hard-switched SMPS designs |
| EAS | 64 mJ single-pulse avalanche energy - sustains unclamped inductive turn-off without failure in relay or solenoid drive |
| TJ Range | −55 to +150 °C - qualified for industrial ambient environments with no derating below 100 °C case temperature |
| ID (TC = 100 °C) | 2.1 A - defines usable current limit in enclosed enclosures with limited airflow |
Pinout & Package
D2PAK (TO-263) surface-mount package with exposed drain tab for thermal and electrical connection to PCB copper pour. Standard 3-lead configuration: Gate (G), Drain (D), Source (S). Mounting requires minimum 0.420" × 0.355" (10.67 mm × 9.02 mm) copper pad per AN826 recommendation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G | Gate control terminal | Accepts 0–10 V logic-level drive; ±100 nA leakage ensures stable bias in high-impedance gate networks |
| D | Drain (high-side switch node) | Exposed metal tab - must be connected to system ground or high-voltage rail via ≥1.5 oz copper for thermal and EMI control |
| S | Source (return path) | Reference node for gate drive; internal source inductance (LS = 7.5 nH) impacts high-di/dt ringing during turn-off |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | 3.3 A IAR, 3.6 mJ EAR - enables robust operation in inductive load switching without external clamping |
| Dynamic dV/dt immunity | 5.0 V/ns - prevents false turn-on during high-slew-rate voltage transients across drain-source |
| Low Qgd/Qgs ratio | 4.5 nC / 1.8 nC = 2.5 - improves Miller immunity and reduces risk of shoot-through in half-bridge configurations |
| Fast body diode recovery | trr = 150–310 ns, Qrr = 0.60–1.4 μC - minimizes reverse recovery loss and EMI in synchronous rectifier or freewheeling paths |
| Surface-mount packaging | D2PAK footprint - supports automated assembly and high-power density layout with direct thermal coupling to PCB |
Applications
| AC-DC Power Supply Front-End | Industrial Motor Control |
|---|---|
Use Scenario: High-voltage switching in 85–265 VAC offline flyback converters for industrial PLC power modules. IC Role / Device Role / Timing Role: Primary-side high-side switch operating at 65 kHz with 50 % duty cycle and 100 VDS blocking during off-time. Use Value: 200 V VDS and 64 mJ EAS ensure safe operation during line surges and transformer leakage spikes without snubber circuits. |
Use Scenario: Half-bridge leg in 24–48 V brushed DC motor H-bridge drivers for factory automation actuators. IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional current up to 3.3 A with PWM frequency ≤20 kHz. Use Value: 1.5 Ω RDS(on) limits I²R loss to <17 W at full load, enabling operation on 2-layer PCB without heatsink. |
| DC-DC Converter High-Side Switch | Relay/Solenoid Driver |
Use Scenario: 12–48 V input step-up converter for powering isolated sensor interfaces in building management systems. IC Role / Device Role / Timing Role: Synchronous rectifier replacement in boost topology, conducting during low-side FET on-time. Use Value: Fast 17 ns rise time and low 7.5 nH source inductance reduce switching transition losses and voltage overshoot. |
Use Scenario: Solid-state replacement for electromechanical relays controlling HVAC dampers and valve actuators. IC Role / Device Role / Timing Role: Unclamped inductive load switch with 10 A pulsed drain current capability during coil de-energization. Use Value: Repetitive avalanche rating (3.3 A, 3.6 mJ) absorbs stored magnetic energy without external TVS or flyback diode. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP20NM20 | 200 V, 20 A, RDS(on) = 0.22 Ω, TO-220 package, higher current but larger footprint and no avalanche rating | Requires heatsink for >2 A continuous; unsuitable for space-constrained D2PAK layouts or unclamped inductive loads | Choose when higher current and lower RDS(on) outweigh surface-mount compatibility and avalanche robustness |
| IXTP2N200D2 | 200 V, 2 A, RDS(on) = 6.5 Ω, TO-220, ultra-high-voltage trench MOSFET with 100% avalanche tested | Lower current rating and higher on-resistance increase conduction loss; validated for 100 % avalanche stress testing | Prefer when absolute avalanche reliability is critical and 2 A continuous current suffices |
Compared with STP20NM20 and IXTP2N200D2, IRF610STRRPBF delivers balanced trade-offs: moderate RDS(on) and current in a surface-mount package with guaranteed repetitive avalanche capability - making it optimal for cost-sensitive, medium-power industrial switching where PCB area and transient robustness are both constraints.
Availability
IRF610STRRPBF is available at Aetrix Electronics and suitable for AC-DC power supplies, industrial motor control, and DC-DC converter designs requiring stable component supply, RoHS-compliant lead-free termination, and traceable lot-level sourcing.
Supply support for IRF610STRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The IRF610STRRPBF belongs to Vishay's third-generation high-voltage power MOSFET family, engineered for rugged switching performance in off-line power conversion and industrial control applications where avalanche tolerance and surface-mount scalability are essential.
FAQ
What is the maximum continuous drain current for IRF610STRRPBF at 100 °C case temperature?
The IRF610STRRPBF supports 2.1 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects linear derating from 3.3 A at 25 °C using the 0.29 W/°C factor, and applies only when mounted on a PCB with adequate copper area per Vishay's thermal guidelines. Exceeding this current risks junction temperature exceeding 150 °C.
Does IRF610STRRPBF have a fully rated avalanche capability?
Yes, IRF610STRRPBF is explicitly rated for repetitive avalanche operation: 3.3 A repetitive avalanche current (IAR) and 3.6 mJ repetitive avalanche energy (EAR) at TJ ≤ 150 °C. These values are validated per test condition b in the datasheet (VDD = 50 V, L = 8.8 mH, Rg = 25 Ω), confirming suitability for unclamped inductive switching in relay drivers and motor commutation.
What is the gate threshold voltage range for IRF610STRRPBF?
The gate-source threshold voltage (VGS(th)) for IRF610STRRPBF is specified from 2.0 V to 4.0 V at VDS = VGS and ID = 250 μA. This range indicates standard-level (not logic-level) drive requirements: full enhancement requires ≥10 V gate drive, and partial conduction begins near 2.5 V, necessitating clean gate signals to avoid linear-mode operation and thermal runaway.
Can IRF610STRRPBF be used in parallel configurations?
Yes, IRF610STRRPBF is designed for ease of paralleling, as confirmed in the Features section. Its positive RDS(on) temperature coefficient (shown in Fig. 4) promotes current sharing, and low gate charge (8.2 nC) simplifies matched gate drive design. For stable parallel operation, use individual gate resistors (≥10 Ω) and symmetrical PCB layout to minimize loop inductance imbalance between devices.
What is the typical reverse recovery charge (Qrr) of the body diode in IRF610STRRPBF?
The body diode reverse recovery charge (Qrr) for IRF610STRRPBF is specified from 0.60 μC to 1.4 μC at TJ = 25 °C, IF = 3.3 A, and dI/dt = 100 A/μs. This low Qrr contributes to reduced switching loss and EMI in freewheeling and synchronous rectification applications, especially when compared to older MOSFET generations with Qrr > 2 μC.
IRF610STRRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 200 V
- Current - Continuous Drain (Id) @ 25°C:
- 3.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1.5Ohm @ 2A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 8.2 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 140 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3W (Ta), 36W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
IRF610STRRPBF FAQ
1.How can I place an order for IRF610STRRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF610STRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF610STRRPBF reliable?
The price and inventory of IRF610STRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF610STRRPBF is usually 5 days.
3.What payment methods are accepted for IRF610STRRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF610STRRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF610STRRPBF?
IRF610STRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF610STRRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF610STRRPBF?
For technical support, including IRF610STRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF610STRRPBF requirements.
6.How does Aetrix verify that IRF610STRRPBF is sourced from the original manufacturer or authorized distributors?
All IRF610STRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF610STRRPBF meets industry standards.
7.What is the process for return or replacement of IRF610STRRPBF?
All IRF610STRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF610STRRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF610STRRPBF part is unused and in its original packaging.
Return procedure for IRF610STRRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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