Vishay Siliconix IRF614

Overview

IRF614 from Vishay Siliconix is a 250 V, 2.7 A N-channel enhancement-mode power MOSFET in TO-220AB package, featuring 2.0 Ω R_DS(on) at V_GS = 10 V, 8.2 nC total gate charge, and repetitive avalanche rating-designed for flyback converters, motor control, and DC-DC power switches operating up to 150 °C junction temperature.

For engineers reviewing the IRF614 datasheet, IRF614 pinout, IRF614 application, or IRF614 equivalent, this page delivers verified electrical parameters, thermal resistance values (R_thJC = 3.5 °C/W), body diode recovery characteristics (t_rr = 190–390 ns), and real-world switching timing (t_d(off) = 16 ns) critical for hard-switched SMPS design.

Technical Context

The IRF614 employs a third-generation planar vertical DMOS structure optimized for ruggedness and fast switching in unclamped inductive load conditions. Its dynamic dV/dt rating of 4.8 V/ns and 61 mJ single-pulse avalanche energy support reliable operation in snubberless flyback and relay drive circuits without external clamping.

Gate drive is simplified by low threshold voltage (2.0–4.0 V) and modest Q_g (8.2 nC), enabling direct interface with 5 V or 10 V logic-level controllers. The integral body diode exhibits 2.0 V forward drop at 2.7 A and controlled reverse recovery (Q_rr = 0.64–1.3 μC), reducing switching losses in synchronous rectification alternatives.

Key Specifications

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-lead through-hole mounting, 0.50 °C/W case-to-sink thermal resistance with greased flat surface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP2N50 and IRF630, the IRF614 offers optimal balance of 250 V blocking, 2.7 A current, and 2.0 Ω on-resistance in a non-insulated TO-220AB package-making it ideal for cost-sensitive 100–200 V DC industrial power stages where avalanche robustness is mandatory.

Availability

IRF614 is available at Aetrix Electronics and suitable for switch-mode power supplies, DC motor control, relay drivers, and LED constant-current regulators requiring stable component supply across industrial OEM production programs.

Supply support for IRF614 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRF614 belongs to Vishay's third-generation power MOSFET family engineered for ruggedness, fast switching, and cost-effective implementation in commercial-industrial power conversion-emphasizing avalanche survivability and ease of paralleling.

FAQ

What is the maximum continuous drain current for IRF614 at 100 °C case temperature?

The IRF614 specifies a continuous drain current (I_D) of 1.7 A at T_C = 100 °C, derived from its 36 W maximum power dissipation and thermal derating factor of 0.29 W/°C above 25 °C. This value reflects real-world thermal constraints in enclosed industrial enclosures without forced airflow, and must be validated against actual heatsink performance and ambient conditions in the final design. The IRF614 datasheet confirms this rating in the Absolute Maximum Ratings table.

Does IRF614 have a RoHS-compliant version, and what is its orderable part number?

Yes, the RoHS-compliant version of IRF614 is designated IRF614PbF, indicating lead-free terminations and compliance with EU Directive 2011/65/EU. This variant uses halogen-free molding compound and is documented in Vishay's S21-0340-Rev. C datasheet. The IRF614PbF is the standard orderable part offered by Vishay and distributed by Aetrix Electronics for new designs requiring environmental compliance.

What is the typical body diode reverse recovery time (t_rr) of IRF614, and how does it affect circuit performance?

The IRF614 body diode exhibits a typical reverse recovery time (t_rr) of 190 ns, with a maximum of 390 ns at T_J = 25 °C, I_F = 2.7 A, and dI/dt = 100 A/μs. This parameter directly influences voltage overshoot and switching loss during commutation in transformer-coupled topologies. The IRF614's t_rr is consistent with its 0.64–1.3 μC Q_rr, making it suitable for moderate-frequency flyback and forward converters where soft recovery is not mandatory.

Can IRF614 be used in parallel configurations, and what design considerations apply?

Yes, the IRF614 is explicitly designed for ease of paralleling, as noted in its datasheet features. Key enablers include positive temperature coefficient of R_DS(on) (confirmed by normalized R_DS(on) vs. temperature curve), matched threshold voltage (2.0–4.0 V), and low gate charge (8.2 nC). To ensure current sharing, use individual gate resistors (≥25 Ω), symmetrical PCB layout, and common-source routing. The IRF614's thermal resistance (R_thJC = 3.5 °C/W) further supports balanced die temperature in multi-device arrays.

What is the gate-source threshold voltage range for IRF614, and why does it matter for drive circuit design?

The IRF614 has a gate-source threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V at I_D = 250 μA, per its datasheet specifications. This wide tolerance means gate drive must exceed 4.0 V to guarantee full enhancement across process and temperature extremes. For reliable 2.7 A conduction, 10 V drive is recommended to achieve the specified 2.0 Ω R_DS(on). The IRF614's V_GS(th) behavior directly impacts noise immunity and minimum logic-high voltage requirements in microcontroller-driven applications.