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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF614PBF

Name: IRF614PBF
Brand: Vishay Siliconix
SKU: IRF614PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF614PBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRF614PBF.pdf

Description:: MOSFET N-CH 250V 2.7A TO220AB

Quantity:: RFQ Add To RFQ list

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Inventory:3,912

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Product details

Overview

IRF614PBF from Vishay Siliconix is a 250 V, 2.7 A N-channel power MOSFET in TO-220AB package, optimized for medium-voltage switching in offline SMPS, motor control, and DC-DC converters. It features 2.0 Ω R_DS(on) at V_GS = 10 V, 8.2 nC total gate charge, and repetitive avalanche rating up to 2.7 A.

For engineers reviewing the IRF614PBF datasheet, IRF614PBF pinout, IRF614PBF application, or IRF614PBF equivalent, key selection criteria include its 250 V V_DS, 36 W P_D at T_C = 25 °C, 3.5 °C/W R_thJC, and fast switching with 7.0 ns t_d(on) and 7.0 ns t_f.

Technical Context

The IRF614PBF uses a third-generation planar vertical DMOS structure enabling robust unclamped inductive switching and dynamic dV/dt tolerance up to 4.8 V/ns. Its gate threshold voltage (2.0–4.0 V) and low input capacitance (140 pF C_iss) support simple drive with standard logic-level gate drivers.

Designed for hard-switched topologies, it delivers stable R_DS(on) over temperature (0.39 V/°C V_DS tempco) and integrates a fast-recovery body diode (t_rr = 190–390 ns, Q_rr = 0.64–1.3 μC), critical for flyback and active clamp circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	250 V - supports 230 VAC mains-derived bus voltages with margin
R_DS(on)	2.0 Ω @ V_GS = 10 V - enables <2.7 A continuous conduction with ≤14.6 W I²R loss at T_C = 25 °C
Q_g	8.2 nC - determines gate drive power and switching speed in 100–500 kHz SMPS
E_AS	61 mJ - allows safe single-pulse energy absorption during inductive turn-off transients
t_r/t_f	7.6 ns / 7.0 ns - minimizes switching transition losses in high-frequency converters
T_J Range	−55 to +150 °C - ensures operation in industrial ambient environments with heatsink mounting

Pinout & Package

IRF614PBF is housed in a through-hole TO-220AB package with isolated tab (drain-connected), offering low thermal resistance (R_thJC = 3.5 °C/W) and mechanical robustness for manual or wave-solder assembly.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Accepts 10 V logic-level drive; 1.8 nC Q_gs enables fast turn-on with minimal Miller effect
D (Drain)	High-side power terminal	Internally connected to metal tab; requires electrical isolation when mounted to heatsink
S (Source)	Power return and reference	Serves as local ground reference for gate drive; carries full load current and body diode reverse recovery charge

Key Features

Feature	Design Value
Repetitive avalanche rated	Supports 2.7 A I_AR and 3.6 mJ E_AR without derating-enables reliable operation in inductive load switching
Dynamic dV/dt immunity	Rated 4.8 V/ns-prevents false turn-on in high-noise bridge or flyback configurations
Fast switching performance	7.0 ns t_d(on), 7.0 ns t_f, and 140 pF C_iss reduce transition losses in 200+ kHz designs
Low gate charge	8.2 nC Q_g with 4.5 nC Q_gd-minimizes driver stress and improves efficiency in high-duty-cycle applications

Applications

Offline AC-DC Adapters	Industrial Motor Drives
Use Scenario: 20–60 W universal-input flyback converter powering consumer electronics. IC Role / Device Role / Timing Role: Primary-side switching transistor handling 250 V DC bus, synchronized with PWM controller. Use Value: 61 mJ E_AS absorbs leakage inductance spikes; 2.0 Ω R_DS(on) limits conduction loss at 2.7 A peak current.	Use Scenario: Low-power BLDC gate driver stage in HVAC blowers or pump controllers. IC Role / Device Role / Timing Role: High-side switch in half-bridge configuration controlling phase winding current. Use Value: 4.8 V/ns dV/dt rating prevents spurious turn-on during fast commutation; TO-220AB enables direct heatsink mounting.
DC-DC Converters	Lighting Ballasts
Use Scenario: 48 V input, 12 V output forward converter in telecom power systems. IC Role / Device Role / Timing Role: Main power switch operating at 250 kHz with synchronous rectification. Use Value: 140 pF C_iss and 9.6 pF Crss reduce capacitive coupling; 7.6 ns rise time maintains tight duty cycle control.	Use Scenario: Electronic ballast for fluorescent lamps driving resonant tank at 25–50 kHz. IC Role / Device Role / Timing Role: Resonant switch managing zero-voltage switching transitions. Use Value: Fast body diode (t_rr = 190–390 ns) enables clean reverse recovery; 150 °C max T_J sustains thermal cycling in enclosed fixtures.

Offline AC-DC Adapters

Industrial Motor Drives

Use Scenario: 20–60 W universal-input flyback converter powering consumer electronics.

IC Role / Device Role / Timing Role: Primary-side switching transistor handling 250 V DC bus, synchronized with PWM controller.

Use Value: 61 mJ E_AS absorbs leakage inductance spikes; 2.0 Ω R_DS(on) limits conduction loss at 2.7 A peak current.

Use Scenario: Low-power BLDC gate driver stage in HVAC blowers or pump controllers.

IC Role / Device Role / Timing Role: High-side switch in half-bridge configuration controlling phase winding current.

Use Value: 4.8 V/ns dV/dt rating prevents spurious turn-on during fast commutation; TO-220AB enables direct heatsink mounting.

DC-DC Converters

Lighting Ballasts

Use Scenario: 48 V input, 12 V output forward converter in telecom power systems.

IC Role / Device Role / Timing Role: Main power switch operating at 250 kHz with synchronous rectification.

Use Value: 140 pF C_iss and 9.6 pF Crss reduce capacitive coupling; 7.6 ns rise time maintains tight duty cycle control.

Use Scenario: Electronic ballast for fluorescent lamps driving resonant tank at 25–50 kHz.

IC Role / Device Role / Timing Role: Resonant switch managing zero-voltage switching transitions.

Use Value: Fast body diode (t_rr = 190–390 ns) enables clean reverse recovery; 150 °C max T_J sustains thermal cycling in enclosed fixtures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP2N50	500 V V_DS, 2.0 A I_D, 4.5 Ω R_DS(on), TO-220	Higher voltage rating but higher on-resistance and lower current capability	Choose STP2N50 only if >350 V blocking is required; IRF614PBF offers better conduction efficiency below 250 V
FQP27N25	250 V V_DS, 27 A I_D, 0.11 Ω R_DS(on), TO-220	Higher current and lower R_DS(on), but larger gate charge (42 nC) and slower switching	Select FQP27N25 for high-current linear or low-frequency switching; IRF614PBF preferred for compact 2–3 A SMPS with fast dynamics

Compared with STP2N50 and FQP27N25, the IRF614PBF balances moderate voltage headroom, low gate drive demand, and proven avalanche ruggedness-making it optimal for cost-sensitive, thermally constrained 25–60 W offline converters where layout simplicity and reliability outweigh raw current capacity.

Availability

IRF614PBF is available at Aetrix Electronics and suitable for offline AC-DC adapters, industrial motor drives, and lighting ballasts requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for IRF614PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, thermal performance, and reliability.

The IRF614PBF belongs to Vishay's third-generation power MOSFET family, engineered for commercial-industrial switching applications demanding repeatable avalanche capability, fast dV/dt immunity, and stable on-resistance across temperature.

FAQ

What is the maximum continuous drain current of the IRF614PBF at 100 °C case temperature?

The IRF614PBF supports 1.7 A continuous drain current at T_C = 100 °C, per its absolute maximum ratings table. This derating reflects thermal limitations of the TO-220AB package and ensures junction temperature remains within −55 to +150 °C range. At 25 °C case temperature, the rating rises to 2.7 A. Designers must verify heatsink sizing using R_thJC = 3.5 °C/W and R_thCS = 0.50 °C/W.

Does the IRF614PBF have a built-in body diode, and what are its key recovery characteristics?

Yes, the IRF614PBF integrates a monolithic body diode with typical reverse recovery time (t_rr) of 190–390 ns and reverse recovery charge (Q_rr) of 0.64–1.3 μC at T_J = 25 °C, I_F = 2.7 A, and dI/dt = 100 A/μs. These values enable use in flyback and resonant converters where controlled diode turn-off reduces voltage overshoot. The diode's V_SD is 2.0 V at I_S = 2.7 A and V_GS = 0 V.

Is the IRF614PBF RoHS-compliant, and what does the 'PbF' suffix indicate?

Yes, the IRF614PBF is RoHS-compliant. The 'PbF' suffix denotes lead (Pb)-free termination per EU RoHS Directive 2011/65/EU and Vishay specification 99912. The device uses matte tin plating over copper leads and meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1). Non-PbF variants (e.g., IRF614) contain leaded terminations and are not RoHS-compliant.

What is the gate-source threshold voltage range for the IRF614PBF, and how does it affect drive requirements?

The IRF614PBF has a gate-source threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V at I_D = 250 μA. This ensures reliable turn-on with standard 5 V or 10 V logic-level gate drivers while avoiding unintended conduction from noise. Its 1.8 nC Q_gs and 8.2 nC total Q_g allow fast switching with low-drive-strength ICs such as UC384x or TL494 without external buffer stages.

Can the IRF614PBF be used in parallel configurations, and what design considerations apply?

Yes, the IRF614PBF is designed for ease of paralleling, as confirmed by Vishay's datasheet features. Key requirements include matched gate resistors (≤25 Ω), symmetrical PCB layout to minimize loop inductance, and individual source resistors for current balancing. Its positive R_DS(on) temperature coefficient (0.39 V/°C V_DS tempco) promotes inherent current sharing above 100 °C, reducing thermal runaway risk in multi-device arrays.

IRF614PBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 250 V

Current - Continuous Drain (Id) @ 25°C:: 2.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2Ohm @ 1.6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 8.2 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 140 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 36W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRF614PBF FAQ

1.How can I place an order for IRF614PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF614PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF614PBF reliable?

The price and inventory of IRF614PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF614PBF is usually 5 days.

3.What payment methods are accepted for IRF614PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF614PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF614PBF?

IRF614PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF614PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF614PBF?

For technical support, including IRF614PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF614PBF requirements.

6.How does Aetrix verify that IRF614PBF is sourced from the original manufacturer or authorized distributors?

All IRF614PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF614PBF meets industry standards.

7.What is the process for return or replacement of IRF614PBF?

All IRF614PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF614PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF614PBF part is unused and in its original packaging.

Return procedure for IRF614PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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