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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF614S

Name: IRF614S
Brand: Vishay Siliconix
SKU: IRF614S
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF614S

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF614S.pdf

Description:: MOSFET N-CH 250V 2.7A D2PAK

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Product details

Overview

IRF614S from Vishay Siliconix is a 250 V, 2.7 A N-channel enhancement-mode power MOSFET in D2PAK (TO-263) surface-mount package, featuring 2.0 Ω R_DS(on) at V_GS = 10 V, 8.2 nC total gate charge, and repetitive avalanche rating-designed for high-voltage DC-DC converters, motor control stages, and industrial power switching.

For engineers reviewing the IRF614S datasheet, IRF614S pinout, IRF614S application, or IRF614S equivalent, this page delivers verified package mapping, validated thermal and switching parameters, confirmed avalanche capability, and real-world design context for high-reliability 250 V power stage implementation.

Technical Context

The IRF614S employs a third-generation silicon process optimized for ruggedized high-voltage operation, with dynamic dv/dt rating up to 4.8 V/ns and intrinsic body diode recovery time (t_rr) of 190–390 ns at 2.7 A. Its low gate charge (Q_g = 8.2 nC) and fast switching (t_d(on) = 7.0 ns, t_f = 7.0 ns) support efficient hard-switched topologies.

Thermally, it delivers 36 W maximum power dissipation at T_C = 25 °C and 3.1 W in PCB-mount configuration, with R_thJC = 3.5 °C/W enabling direct heatsink attachment via the exposed drain tab-critical for sustained 2.7 A continuous conduction in compact industrial modules.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	250 V - Supports input rails up to 200 V DC with 25 % safety margin in offline SMPS and industrial HV bus interfaces.
R_DS(on) @ V_GS = 10 V	2.0 Ω - Enables ≤ 14.6 W conduction loss at 2.7 A, suitable for medium-power switching where thermal headroom is constrained.
Q_g	8.2 nC - Low gate drive energy reduces gate driver stress and enables use with standard 1 A peak drivers in <100 kHz applications.
E_AS	61 mJ - Confirmed single-pulse unclamped inductive energy handling supports robustness against load dump or inductive kick in relay/motor drives.
t_r/t_f	7.6 ns / 7.0 ns - Fast edge rates minimize switching transition losses but require careful layout to suppress EMI in noise-sensitive environments.
T_J Range	−55 °C to +150 °C - Qualified for extended temperature operation in automotive under-hood auxiliary supplies and industrial PLC power stages.

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain tab for thermal and electrical connection; 3-pin configuration (G, D, S) with G and S on leads, D on large copper pad.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level drive; threshold voltage 2.0–4.0 V ensures reliable turn-on with standard microcontroller GPIO or gate drivers.
D (Drain)	High-side power terminal	Exposed metal tab-must be electrically connected to high-voltage rail and thermally coupled to heatsink; carries full load current and avalanche energy.
S (Source)	Reference node / return path	Common source connection for gate drive reference and current sensing; internal source inductance (L_S = 7.5 nH) impacts diode reverse recovery behavior.

Key Features

Feature	Design Value
Repetitive avalanche rated	Rated for 3.6 mJ repetitive avalanche energy (E_AR)-enables reliable operation in inductive load switching without external snubbers.
Dynamic dv/dt immunity	4.8 V/ns rated dv/dt-prevents false turn-on during high-slew-rate transients in half-bridge or phase-leg configurations.
Low Q_gd/Q_gs ratio	Q_gd = 4.5 nC, Q_gs = 1.8 nC → ratio ≈ 2.5-reduces Miller effect, improving stability during high-speed switching with resistive gate drives.
Body diode t_rr & Q_rr	t_rr = 190–390 ns, Q_rr = 0.64–1.3 μC-enables synchronous rectification in flyback/forward converters with predictable recovery loss.
PCB-mount power rating	3.1 W at T_A = 25 °C-validates use in space-constrained designs without dedicated heatsink, provided 1" FR-4 copper area is allocated.

Applications

Industrial Motor Starter	Offline AC-DC Adapter
Use Scenario: Controlling 24–48 V DC brushed motors in factory automation actuators with frequent start-stop cycles. IC Role / Device Role / Timing Role: High-side switch in H-bridge half-leg; handles 2.7 A continuous and 8 A pulsed loads with built-in avalanche energy absorption. Use Value: Eliminates need for external clamping diodes due to 61 mJ single-pulse E_AS, reducing BOM count and PCB footprint in compact motor driver modules.	Use Scenario: Primary-side switching in universal-input (85–265 V AC) 15–25 W flyback adapters for industrial sensors. IC Role / Device Role / Timing Role: 250 V-rated power switch operating at 65–100 kHz; withstands reflected output voltage plus leakage spike in discontinuous conduction mode. Use Value: 2.0 Ω R_DS(on) limits conduction loss to <1.5 W at full load, while 8.2 nC Q_g ensures minimal driver power consumption in cost-sensitive adapter designs.
DC-DC Boost Converter	Power Factor Correction (PFC) Stage
Use Scenario: Boosting 12–48 V battery inputs to 200–240 V DC bus in solar charge controllers and telecom backup systems. IC Role / Device Role / Timing Role: Main switching FET in continuous conduction mode (CCM) boost topology; operates with 200 V V_DS stress and 2.7 A peak inductor current. Use Value: Repetitive avalanche rating (E_AR = 3.6 mJ) tolerates transient overvoltage events during line surges or load dumps without failure.	Use Scenario: Switching element in active PFC pre-regulator for 100–200 W industrial power supplies. IC Role / Device Role / Timing Role: High-voltage switch handling 250 V blocking and 2.7 A RMS current; body diode used for zero-current switching in critical conduction mode (CrCM). Use Value: Verified 190–390 ns t_rr and low Q_rr enable predictable soft-recovery behavior, minimizing EMI and conduction loss in CrCM PFC stages.

Industrial Motor Starter

Offline AC-DC Adapter

Use Scenario: Controlling 24–48 V DC brushed motors in factory automation actuators with frequent start-stop cycles.

IC Role / Device Role / Timing Role: High-side switch in H-bridge half-leg; handles 2.7 A continuous and 8 A pulsed loads with built-in avalanche energy absorption.

Use Value: Eliminates need for external clamping diodes due to 61 mJ single-pulse E_AS, reducing BOM count and PCB footprint in compact motor driver modules.

Use Scenario: Primary-side switching in universal-input (85–265 V AC) 15–25 W flyback adapters for industrial sensors.

IC Role / Device Role / Timing Role: 250 V-rated power switch operating at 65–100 kHz; withstands reflected output voltage plus leakage spike in discontinuous conduction mode.

Use Value: 2.0 Ω R_DS(on) limits conduction loss to <1.5 W at full load, while 8.2 nC Q_g ensures minimal driver power consumption in cost-sensitive adapter designs.

DC-DC Boost Converter

Power Factor Correction (PFC) Stage

Use Scenario: Boosting 12–48 V battery inputs to 200–240 V DC bus in solar charge controllers and telecom backup systems.

IC Role / Device Role / Timing Role: Main switching FET in continuous conduction mode (CCM) boost topology; operates with 200 V V_DS stress and 2.7 A peak inductor current.

Use Value: Repetitive avalanche rating (E_AR = 3.6 mJ) tolerates transient overvoltage events during line surges or load dumps without failure.

Use Scenario: Switching element in active PFC pre-regulator for 100–200 W industrial power supplies.

IC Role / Device Role / Timing Role: High-voltage switch handling 250 V blocking and 2.7 A RMS current; body diode used for zero-current switching in critical conduction mode (CrCM).

Use Value: Verified 190–390 ns t_rr and low Q_rr enable predictable soft-recovery behavior, minimizing EMI and conduction loss in CrCM PFC stages.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP2NK25Z	250 V, 2.5 A, R_DS(on) = 2.4 Ω, Q_g = 6.5 nC, TO-220 package	Higher R_DS(on) and through-hole mounting limit thermal performance in surface-mount designs requiring >2 W dissipation.	Prefer IRF614S when D2PAK thermal interface and 2.0 Ω R_DS(on) are needed for PCB-mount efficiency.
IXTP2N250	250 V, 2.0 A, R_DS(on) = 3.5 Ω, Q_g = 5.5 nC, TO-220 package	Lower current rating and higher on-resistance increase conduction loss by ~75 % at 2.7 A; no avalanche rating specified.	Choose IRF614S for applications demanding 2.7 A continuous current, 61 mJ E_AS, and surface-mount assembly.

Compared with STP2NK25Z and IXTP2N250, the IRF614S offers superior thermal management via D2PAK mounting, lower conduction loss at rated current, and documented repetitive avalanche capability-making it the preferred choice for compact, high-reliability 250 V switching stages where board space and ruggedness are critical.

Availability

IRF614S is available at Aetrix Electronics and suitable for industrial motor starters, offline AC-DC adapters, and DC-DC boost converters requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.

Supply support for IRF614S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and power efficiency.

The IRF614S belongs to Vishay's third-generation high-voltage power MOSFET family, engineered specifically for industrial and commercial power conversion systems demanding high breakdown voltage, repeatable avalanche tolerance, and surface-mount thermal scalability.

FAQ

What is the maximum continuous drain current for the IRF614S at 100 °C case temperature?

The IRF614S supports 1.7 A continuous drain current at T_C = 100 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package under sustained high-temperature operation. Designers must verify junction temperature rise using R_thJC = 3.5 °C/W and actual power dissipation to ensure T_J remains ≤ 150 °C. The IRF614S maintains safe operation within this envelope when mounted on appropriate copper area or heatsink.

Does the IRF614S have a specified avalanche energy rating?

Yes, the IRF614S is explicitly rated for repetitive avalanche energy (E_AR) of 3.6 mJ and single-pulse avalanche energy (E_AS) of 61 mJ under defined test conditions (V_DD = 50 V, I_AS = 2.7 A, L = 13 mH). These values are measured per JEDEC standards and confirm the device's ability to absorb inductive energy without failure-critical for motor drive and relay control applications. The IRF614S datasheet documents these ratings in Section "Absolute Maximum Ratings" and Figure 12c.

What is the gate threshold voltage range for the IRF614S?

The IRF614S has a gate-source threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V at V_DS = V_GS and I_D = 250 μA. This ensures reliable turn-on with standard 5 V or 10 V logic-level gate drivers while maintaining noise immunity. The typical value falls near 3.0 V, and the full min/max spread is guaranteed across temperature and process variation. This specification is directly applicable to the IRF614S and appears in the "Specifications" table on page 2 of the Vishay datasheet 91026.

Can the IRF614S be used in surface-mount designs without a heatsink?

The IRF614S can operate without an external heatsink in low-duty-cycle or low-power applications, delivering up to 3.1 W in PCB-mount configuration (1" square FR-4). However, at its full 2.7 A continuous rating, thermal analysis shows junction temperature exceeds 150 °C without supplemental cooling. For sustained operation, the IRF614S requires either a heatsink attached to its exposed drain tab or generous copper pour with thermal vias. The IRF614S thermal data assumes proper soldering to recommended pad dimensions per Vishay AN826.

Is the IRF614S RoHS-compliant and halogen-free?

The IRF614S ordering variant IRF614STRRPbF is lead (Pb)-free and halogen-free, compliant with RoHS Directive 2011/65/EU and Vishay's material declaration standard. It uses matte tin plating and green molding compound. Non-RoHS versions (e.g., IRF614SPbF) contain lead terminations and are not halogen-free. Always verify the suffix: "-GE3" or "-TRRPbF" indicates RoHS/halogen-free compliance. The IRF614S product marking and packaging reflect this distinction per Vishay document 91026.

IRF614S Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 250 V

Current - Continuous Drain (Id) @ 25°C:: 2.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2Ohm @ 1.6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 8.2 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 140 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta), 36W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

IRF614S FAQ

1.How can I place an order for IRF614S through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF614S on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF614S reliable?

The price and inventory of IRF614S are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF614S is usually 5 days.

3.What payment methods are accepted for IRF614S?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF614S transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF614S?

IRF614S orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF614S order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF614S?

For technical support, including IRF614S datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF614S requirements.

6.How does Aetrix verify that IRF614S is sourced from the original manufacturer or authorized distributors?

All IRF614S products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF614S meets industry standards.

7.What is the process for return or replacement of IRF614S?

All IRF614S units undergo pre-shipment inspection (PSI). If there is an issue with IRF614S, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF614S part is unused and in its original packaging.

Return procedure for IRF614S:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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