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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF614SPBF

Name: IRF614SPBF
Brand: Vishay Siliconix
SKU: IRF614SPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF614SPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF614SPBF.pdf

Description:: MOSFET N-CH 250V 2.7A D2PAK

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Product details

Overview

IRF614SPBF from Vishay Siliconix is a 250 V, 2.7 A N-channel surface-mount power MOSFET in D2PAK (TO-263) package, featuring 2.0 Ω R_DS(on) at V_GS = 10 V, 8.2 nC total gate charge, and repetitive avalanche rating-designed for high-voltage DC-DC converters, motor control stages, and industrial power switching where ruggedness and fast switching are critical.

For engineers reviewing the IRF614SPBF datasheet, IRF614SPBF pinout, IRF614SPBF application, or IRF614SPBF equivalent, this page delivers verified electrical parameters, thermal derating behavior, diode recovery characteristics, and real-world mounting guidance for PCB-level thermal management and layout optimization.

Technical Context

This third-generation power MOSFET uses planar V-groove silicon technology to achieve stable R_DS(on) over temperature and robust unclamped inductive switching performance. Its 3.5 °C/W junction-to-case thermal resistance supports high-power dissipation when mounted on heatsinks.

The device integrates a fast-recovery body diode with trr = 190–390 ns and Q_rr = 0.64–1.3 μC, enabling efficient synchronous rectification and flyback snubberless operation. Gate drive is simplified by low 2.4–14.7 Ω input resistance and 1.8 nC gate-source charge.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	250 V - Withstands up to 250 V drain-source blocking voltage, suitable for 200 V bus applications with margin.
R_DS(on)	2.0 Ω @ V_GS = 10 V - Delivers <2.7 A continuous current with ≤5.5 W conduction loss at 100 °C case temperature.
Q_g	8.2 nC - Enables fast turn-on/turn-off with standard gate drivers; reduces switching losses in 100–500 kHz SMPS designs.
E_AS	61 mJ - Supports unclamped inductive energy handling without failure, critical for relay driving and solenoid control.
T_J Range	−55 to +150 °C - Qualified for extended industrial and automotive under-hood environments with full parameter guarantee.
dv/dt Rating	4.8 V/ns - Resists false triggering during high-slew-rate transients in noisy power systems.
R_thJC	3.5 °C/W - Allows direct heatsink mounting for >25 W power dissipation with minimal thermal interface resistance.

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration (G, D, S), lead (Pb)-free and halogen-free compliant.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Accepts 10 V logic-level drive; 1.8 nC Q_gs enables rapid threshold crossing and low driver power demand.
D (Drain)	High-side power terminal	Connected to internal die backside and exposed thermal pad; must be soldered to large copper area for thermal conduction and EMI shielding.
S (Source)	Reference and return path	Provides low-inductance return for gate drive and load current; internal source inductance LS = 7.5 nH affects high-speed switching ringing.

Key Features

Feature	Design Value
Repetitive avalanche rated	Rated for 3.6 mJ repetitive avalanche energy (EAR), enabling reliable operation in inductive load switching without external clamping.
Dynamic dv/dt immunity	Guaranteed 4.8 V/ns dv/dt rating prevents spurious turn-on during fast voltage transients in high-noise motor drives.
Fast switching	td(on) = 7.0 ns, tr = 7.6 ns, td(off) = 16 ns - Minimizes transition losses in high-frequency DC-DC topologies.
Low Q_gd/Q_gs ratio	Q_gd = 4.5 nC / Q_gs = 1.8 nC → ratio ≈ 2.5 - Improves Miller immunity and hard-switching robustness.
PCB-mount power capability	Dissipates 3.1 W on 1" FR-4 PCB - Enables compact, heatsink-free designs for low-to-medium power industrial modules.

Applications

Industrial Motor Control	High-Voltage DC-DC Converters
Use Scenario: Driving 24–48 V brushed DC motors in programmable logic controller (PLC) output modules. IC Role / Device Role / Timing Role: High-side switch controlling motor direction and braking via PWM at 20–50 kHz. Use Value: Repetitive avalanche rating absorbs inductive kickback during PWM off-time, eliminating need for external flyback diodes.	Use Scenario: Primary-side switch in isolated 200 V input, 12 V output forward or flyback converter for telecom power supplies. IC Role / Device Role / Timing Role: Main power switch operating at 250 kHz with 200 V drain stress and 2.7 A peak current. Use Value: 250 V V_DS rating provides 25% margin over 200 V bus, while 2.0 Ω R_DS(on) limits conduction loss to <1.5 W at full load.
AC-DC Auxiliary Power Supplies	Solenoid & Relay Drivers
Use Scenario: Standby power supply in industrial AC-DC front-end, converting rectified 350 V DC to 12 V for control circuitry. IC Role / Device Role / Timing Role: Low-duty-cycle, high-voltage switch in quasi-resonant flyback topology. Use Value: 61 mJ single-pulse avalanche energy handles startup surges and line transients without failure.	Use Scenario: Driving 24 V/1 A solenoids in factory automation valves and pneumatic actuators. IC Role / Device Role / Timing Role: Low-frequency (≤10 Hz) on/off switch with fast turn-off to prevent coil overheating. Use Value: Body diode reverse recovery time (trr ≤ 390 ns) ensures clean turn-off and minimizes contact arcing in inductive loads.

Industrial Motor Control

High-Voltage DC-DC Converters

Use Scenario: Driving 24–48 V brushed DC motors in programmable logic controller (PLC) output modules.

IC Role / Device Role / Timing Role: High-side switch controlling motor direction and braking via PWM at 20–50 kHz.

Use Value: Repetitive avalanche rating absorbs inductive kickback during PWM off-time, eliminating need for external flyback diodes.

Use Scenario: Primary-side switch in isolated 200 V input, 12 V output forward or flyback converter for telecom power supplies.

IC Role / Device Role / Timing Role: Main power switch operating at 250 kHz with 200 V drain stress and 2.7 A peak current.

Use Value: 250 V V_DS rating provides 25% margin over 200 V bus, while 2.0 Ω R_DS(on) limits conduction loss to <1.5 W at full load.

AC-DC Auxiliary Power Supplies

Solenoid & Relay Drivers

Use Scenario: Standby power supply in industrial AC-DC front-end, converting rectified 350 V DC to 12 V for control circuitry.

IC Role / Device Role / Timing Role: Low-duty-cycle, high-voltage switch in quasi-resonant flyback topology.

Use Value: 61 mJ single-pulse avalanche energy handles startup surges and line transients without failure.

Use Scenario: Driving 24 V/1 A solenoids in factory automation valves and pneumatic actuators.

IC Role / Device Role / Timing Role: Low-frequency (≤10 Hz) on/off switch with fast turn-off to prevent coil overheating.

Use Value: Body diode reverse recovery time (trr ≤ 390 ns) ensures clean turn-off and minimizes contact arcing in inductive loads.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiHF614S-GE3	Same die, identical R_DS(on), Q_g, and avalanche specs; Pb-free and halogen-free per JEDEC J-STD-609.	No functional difference; preferred for RoHS-compliant production requiring green material compliance.	Select SiHF614S-GE3 when environmental compliance is mandatory and tape-and-reel packaging is required.
IRF630NPbF	Higher V_DS (200 V), lower R_DS(on) (0.35 Ω), higher ID (9 A), but no repetitive avalanche rating and larger D2PAK footprint.	Better for high-current, lower-voltage applications; unsuitable for unclamped inductive switching above 200 V.	Choose IRF630NPbF only if voltage margin is relaxed and avalanche ruggedness is not required.

Compared with SiHF614S-GE3, IRF614SPBF offers identical electrical performance but differs in termination finish (matte Sn vs. Pb/Sn); versus IRF630NPbF, it trades higher on-resistance for guaranteed avalanche capability and tighter voltage rating-making it preferable for safety-critical 250 V industrial switching.

Availability

IRF614SPBF is available at Aetrix Electronics and suitable for industrial motor control, high-voltage DC-DC conversion, and solenoid driving applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRF614SPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and thermal performance.

The IRF614SPBF belongs to Vishay's third-generation surface-mount power MOSFET family, engineered specifically for high-voltage industrial switching where avalanche tolerance, dv/dt immunity, and PCB-mount thermal efficiency are essential.

FAQ

What is the maximum continuous drain current for IRF614SPBF at 100 °C case temperature?

The maximum continuous drain current for IRF614SPBF is 1.7 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package and ensures safe operation within the 150 °C maximum junction temperature limit. The IRF614SPBF maintains stable R_DS(on) across this range due to its positive temperature coefficient.

Does IRF614SPBF have a built-in body diode, and what are its key recovery parameters?

Yes, IRF614SPBF integrates a monolithic body diode with typical reverse recovery time (t_rr) of 190–390 ns and reverse recovery charge (Q_rr) of 0.64–1.3 μC at T_J = 25 °C. These values enable efficient freewheeling in inductive circuits and reduce snubber requirements. The IRF614SPBF body diode forward voltage is 2.0 V at I_S = 2.7 A and V_GS = 0 V.

Can IRF614SPBF be used in avalanche mode, and what energy level is rated?

Yes, IRF614SPBF is explicitly rated for repetitive avalanche operation with 3.6 mJ per pulse (E_AR) and single-pulse avalanche energy (E_AS) of 61 mJ under defined test conditions (V_DD = 50 V, L = 13 mH, I_AS = 2.7 A). This makes IRF614SPBF suitable for inductive load switching without external clamping components.

What is the gate threshold voltage range for IRF614SPBF, and how does it affect drive requirements?

The gate threshold voltage (V_GS(th)) for IRF614SPBF is specified from 2.0 V to 4.0 V at I_D = 250 μA. This confirms standard-level (not logic-level) drive compatibility, requiring ≥10 V gate drive for full enhancement. The IRF614SPBF achieves 2.7 A drain current at V_GS = 10 V, ensuring robust saturation with common 12 V gate drivers.

How does the thermal resistance of IRF614SPBF compare between junction-to-case and junction-to-ambient mounting?

IRF614SPBF has a maximum junction-to-case (R_thJC) thermal resistance of 3.5 °C/W, enabling high-power dissipation when heatsink-mounted. In contrast, its junction-to-ambient (R_thJA) is 62 °C/W for standard mounting and 40 °C/W when mounted on a 1" FR-4 PCB-highlighting the critical impact of thermal design. For reliable operation, the IRF614SPBF requires careful attention to heatsinking or PCB copper area to avoid exceeding 150 °C junction temperature.

IRF614SPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 250 V

Current - Continuous Drain (Id) @ 25°C:: 2.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2Ohm @ 1.6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 8.2 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 140 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta), 36W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

IRF614SPBF FAQ

1.How can I place an order for IRF614SPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF614SPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF614SPBF reliable?

The price and inventory of IRF614SPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF614SPBF is usually 5 days.

3.What payment methods are accepted for IRF614SPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF614SPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF614SPBF?

IRF614SPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF614SPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF614SPBF?

For technical support, including IRF614SPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF614SPBF requirements.

6.How does Aetrix verify that IRF614SPBF is sourced from the original manufacturer or authorized distributors?

All IRF614SPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF614SPBF meets industry standards.

7.What is the process for return or replacement of IRF614SPBF?

All IRF614SPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF614SPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF614SPBF part is unused and in its original packaging.

Return procedure for IRF614SPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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