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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF614STRR

Name: IRF614STRR
Brand: Vishay Siliconix
SKU: IRF614STRR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF614STRR

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF614STRR.pdf

Description:: MOSFET N-CH 250V 2.7A D2PAK

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Product details

Overview

IRF614STRR from Vishay Siliconix is a surface-mount N-channel power MOSFET in D2PAK (TO-263) package, rated for 250 V drain-source voltage, 2.7 A continuous drain current at 25 °C, and 2.0 Ω on-resistance at V_GS = 10 V. It delivers fast switching (turn-on delay 7.0 ns), repetitive avalanche capability (E_AS = 61 mJ), and is optimized for high-voltage DC-DC converters and industrial motor control.

For engineers reviewing the IRF614STRR datasheet, IRF614STRR pinout, IRF614STRR application, or IRF614STRR equivalent, key selection criteria include its 250 V blocking rating, 2.0 Ω R_DS(on), D2PAK thermal performance (R_thJC = 3.5 °C/W), avalanche ruggedness, and compatibility with standard gate-drive voltages (±20 V).

Technical Context

This third-generation power MOSFET uses planar silicon technology with optimized die layout for low gate charge (Q_g = 8.2 nC) and controlled internal inductance (L_D = 4.5 nH, L_S = 7.5 nH). Its dynamic dv/dt rating (4.8 V/ns) and body diode recovery time (t_rr = 190–390 ns) support reliable operation in hard-switched inductive loads.

The device integrates a robust intrinsic body diode rated for 2.7 A continuous source-drain current and 8.0 A pulsed current, with V_SD = 2.0 V at T_J = 25 °C. Thermal design is enabled by its low junction-to-case resistance and suitability for PCB-mount dissipation up to 3.1 W.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	250 V - Supports primary-side switching in offline SMPS up to 230 VAC mains with margin.
R_DS(on) @ V_GS = 10 V	2.0 Ω - Enables efficient conduction at ≤2.7 A load currents without forced cooling.
I_D (continuous, T_C = 25 °C)	2.7 A - Sustains full-rated current when mounted on heatsink or thermally enhanced PCB.
Q_g	8.2 nC - Low gate charge reduces driver power loss and enables >100 kHz switching in compact designs.
E_AS	61 mJ - Withstands unclamped inductive energy spikes without failure in relay drivers or solenoid controls.
t_r/t_f	7.6 ns / 7.0 ns - Fast edge rates minimize switching losses in high-frequency power stages.
T_J range	−55 to +150 °C - Qualified for industrial ambient environments and sealed enclosure applications.

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-terminal configuration (G, D, S); 10.67 mm × 9.65 mm footprint; 15.88 mm max height; RoHS-compliant lead-free and halogen-free construction.

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control input	Receives 10 V logic-level drive; ±20 V absolute max rating prevents gate oxide damage.
Drain (D)	High-side power output	Connected to exposed metal tab; must be electrically isolated from heatsink unless referenced to same potential.
Source (S)	Power return / reference node	Provides low-inductance return path; internal source inductance (7.5 nH) affects diode recovery behavior.

Key Features

Feature	Design Value
Repetitive avalanche rated	Enables reliable operation under transient overloads without external snubbers in flyback or boost converters.
Dynamic dv/dt immunity	4.8 V/ns rating suppresses false turn-on in high-noise environments like motor drives and industrial PLC outputs.
Low Q_gd/Q_gs ratio	4.5 nC / 1.8 nC = 2.5 - Improves Miller immunity and enables stable paralleling of multiple IRF614STRR devices.
PCB-mount power dissipation	3.1 W at T_A = 25 °C - Achievable with 1"² FR-4 board; eliminates need for discrete heatsink in space-constrained designs.
Body diode soft recovery	t_rr = 190–390 ns with Q_rr = 0.64–1.3 μC - Reduces EMI and voltage overshoot during freewheeling in half-bridge topologies.

Applications

Industrial Motor Control	Offline AC-DC Power Supplies
Use Scenario: Driving 24–48 V brushed DC motors in programmable logic controller (PLC) output modules. IC Role / Device Role / Timing Role: High-side switch controlling motor direction and braking via PWM at 20–50 kHz. Use Value: Avalanche rating absorbs inductive kickback during rapid PWM turn-off; D2PAK thermal mass sustains 2.7 A peak current without derating.	Use Scenario: Primary-side switching transistor in 15–30 W universal-input flyback converters. IC Role / Device Role / Timing Role: Main power switch operating at 65–100 kHz with self-supplied gate drive. Use Value: 250 V V_DS provides 50 V margin above 200 VDC rectified peak; low Q_g minimizes driver loss at high frequency.
DC-DC Boost Converters	Solenoid & Relay Drivers
Use Scenario: Step-up stage in battery-powered instrumentation requiring 12–24 V output from 3.3–5 V input. IC Role / Device Role / Timing Role: Synchronous or asynchronous boost switch handling 2–3 A inductor current. Use Value: 2.0 Ω R_DS(on) limits conduction loss to <150 mW at 2.7 A; fast t_r/t_f supports >200 kHz operation.	Use Scenario: Solid-state replacement for electromechanical relays controlling HVAC dampers or valve actuators. IC Role / Device Role / Timing Role: Single-pole, single-throw (SPST) electronic switch with integrated flyback diode handling 2.7 A steady-state load. Use Value: Built-in body diode eliminates external freewheeling diode; E_AS = 61 mJ safely clamps inductive energy during de-energization.

Industrial Motor Control

Offline AC-DC Power Supplies

Use Scenario: Driving 24–48 V brushed DC motors in programmable logic controller (PLC) output modules.

IC Role / Device Role / Timing Role: High-side switch controlling motor direction and braking via PWM at 20–50 kHz.

Use Value: Avalanche rating absorbs inductive kickback during rapid PWM turn-off; D2PAK thermal mass sustains 2.7 A peak current without derating.

Use Scenario: Primary-side switching transistor in 15–30 W universal-input flyback converters.

IC Role / Device Role / Timing Role: Main power switch operating at 65–100 kHz with self-supplied gate drive.

Use Value: 250 V V_DS provides 50 V margin above 200 VDC rectified peak; low Q_g minimizes driver loss at high frequency.

DC-DC Boost Converters

Solenoid & Relay Drivers

Use Scenario: Step-up stage in battery-powered instrumentation requiring 12–24 V output from 3.3–5 V input.

IC Role / Device Role / Timing Role: Synchronous or asynchronous boost switch handling 2–3 A inductor current.

Use Value: 2.0 Ω R_DS(on) limits conduction loss to <150 mW at 2.7 A; fast t_r/t_f supports >200 kHz operation.

Use Scenario: Solid-state replacement for electromechanical relays controlling HVAC dampers or valve actuators.

IC Role / Device Role / Timing Role: Single-pole, single-throw (SPST) electronic switch with integrated flyback diode handling 2.7 A steady-state load.

Use Value: Built-in body diode eliminates external freewheeling diode; E_AS = 61 mJ safely clamps inductive energy during de-energization.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiHF614STRR-GE3	Same die, identical R_DS(on), Q_g, and avalanche specs; Pb-free/halogen-free per JEDEC J-STD-609A Class 2a.	No functional difference; fully interchangeable in new designs requiring RoHS/REACH compliance.	Select SiHF614STRR-GE3 when halogen-free certification is required for end-equipment environmental compliance.
IRF610PbF	Lower voltage rating (200 V), higher R_DS(on) (3.5 Ω), lower Q_g (6.2 nC); same D2PAK package and pinout.	Not suitable for 250 V applications; acceptable only where input voltage remains ≤170 VDC after rectification.	Choose IRF610PbF only if system maximum V_DS stress is confirmed ≤180 V and higher on-resistance is acceptable.

Compared with IRF614STRR, SiHF614STRR-GE3 offers identical electrical performance with enhanced environmental compliance, while IRF610PbF trades voltage headroom and conduction loss for slightly faster switching-making it viable only in lower-voltage legacy replacements.

Availability

IRF614STRR is available at Aetrix Electronics and suitable for industrial motor control, offline AC-DC power supplies, and DC-DC boost converters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRF614STRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and thermal performance.

The IRF614STRR belongs to Vishay's third-generation high-voltage power MOSFET family, engineered for cost-effective, high-efficiency switching in industrial and consumer power conversion systems.

FAQ

What is the maximum continuous drain current for IRF614STRR at 100 °C case temperature?

The IRF614STRR supports 1.7 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package and must be applied when heatsinking is insufficient to maintain T_C ≤ 25 °C. Designers should verify junction temperature using R_thJC = 3.5 °C/W and actual power dissipation in their layout.

Does IRF614STRR have a built-in body diode, and what are its key parameters?

Yes, IRF614STRR integrates a monolithic body diode with 2.7 A continuous forward current rating, 8.0 A pulsed capability, 2.0 V forward voltage at 2.7 A and 25 °C, and reverse recovery time of 190–390 ns. These values are measured under standardized conditions (T_J = 25 °C, I_F = 2.7 A, di/dt = 100 A/μs) and enable use in freewheeling and synchronous rectification roles without external diodes.

Is IRF614STRR suitable for logic-level gate drive?

No, IRF614STRR is not a logic-level MOSFET. Its gate threshold voltage ranges from 2.0 V to 4.0 V, but full enhancement requires V_GS = 10 V to achieve the specified 2.0 Ω R_DS(on). Driving it with 3.3 V or 5 V logic will result in significantly higher on-resistance and conduction loss. For logic-level operation, consider Vishay's Si2300 or similar dedicated low-threshold devices.

What is the avalanche energy rating of IRF614STRR, and how is it tested?

The IRF614STRR is rated for 61 mJ single-pulse avalanche energy (E_AS) under test conditions of V_DD = 50 V, starting T_J = 25 °C, L = 13 mH, R_g = 25 Ω, and I_AS = 2.7 A. This rating is validated per JEDEC standard JESD24-1 and confirms the device's ability to absorb inductive energy without failure during unclamped inductive switching events common in relay and motor drive circuits.

Can IRF614STRR be paralleled with other units for higher current handling?

Yes, IRF614STRR supports paralleling due to its positive temperature coefficient of R_DS(on) and low Q_gd/Q_gs ratio (2.5), which promotes current sharing stability. To ensure balanced operation, use matched gate resistors (≤25 Ω), symmetrical PCB layout with equal trace lengths, and shared thermal mounting. Derate total current by 15% to account for parametric spread and thermal coupling.

IRF614STRR Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 250 V

Current - Continuous Drain (Id) @ 25°C:: 2.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2Ohm @ 1.6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 8.2 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 140 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta), 36W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

IRF614STRR FAQ

1.How can I place an order for IRF614STRR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF614STRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF614STRR reliable?

The price and inventory of IRF614STRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF614STRR is usually 5 days.

3.What payment methods are accepted for IRF614STRR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF614STRR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF614STRR?

IRF614STRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF614STRR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF614STRR?

For technical support, including IRF614STRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF614STRR requirements.

6.How does Aetrix verify that IRF614STRR is sourced from the original manufacturer or authorized distributors?

All IRF614STRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF614STRR meets industry standards.

7.What is the process for return or replacement of IRF614STRR?

All IRF614STRR units undergo pre-shipment inspection (PSI). If there is an issue with IRF614STRR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF614STRR part is unused and in its original packaging.

Return procedure for IRF614STRR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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