My Inquiry
My Account
Vishay Siliconix IRF614STRRPBF
- Part No.:
- IRF614STRRPBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRF614STRRPBF.pdf
- Description:
- MOSFET N-CH 250V 2.7A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:6,204
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IRF614STRRPBF from Vishay Siliconix is a surface-mount N-channel power MOSFET in D2PAK (TO-263) package, rated for 250 V drain-source voltage, 2.7 A continuous drain current at 25 °C, and 2.0 Ω on-resistance at VGS = 10 V. It supports fast switching, repetitive avalanche operation, and is optimized for high-current DC-DC converters and motor control circuits.
For engineers reviewing the IRF614STRRPBF datasheet, IRF614STRRPBF pinout, IRF614STRRPBF application, or IRF614STRRPBF equivalent, key selection criteria include its 36 W maximum power dissipation at TC = 25 °C, 8.2 nC total gate charge, 4.8 V/ns peak diode recovery dv/dt rating, and suitability for unclamped inductive switching with 61 mJ single-pulse avalanche energy.
Technical Context
This third-generation power MOSFET uses planar V-groove silicon technology to achieve ruggedized avalanche performance and low RDS(on) while maintaining stable threshold voltage (2.0–4.0 V) across temperature. Its dynamic parameters-including 140 pF input capacitance, 9.6 pF reverse transfer capacitance, and 7.0 ns turn-on delay-support efficient hard-switching up to several hundred kHz.
The device integrates an intrinsic body diode with 2.0 V forward voltage at 2.7 A and 190–390 ns reverse recovery time, enabling synchronous rectification and freewheeling in buck and flyback topologies. Thermal resistance of 3.5 °C/W (junction-to-case) allows direct heatsink mounting for high-power density designs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 250 V - Supports 200 V bus applications with 25 % safety margin against transients |
| RDS(on) @ VGS = 10 V | 2.0 Ω - Enables <1.1 W conduction loss at 2.3 A RMS in 12 V output stages |
| Qg | 8.2 nC - Compatible with standard 1 A gate drivers for ≤500 kHz switching |
| EAS | 61 mJ - Withstands unclamped inductive energy without failure in motor drive fault conditions |
| TJ Range | −55 to +150 °C - Qualified for industrial and automotive under-hood ambient environments |
| ID @ TC = 100 °C | 1.7 A - Defines usable current derating for sustained operation on PCB without heatsink |
| dv/dt Rating | 4.8 V/ns - Resists false turn-on during high-slew-rate commutation in half-bridge configurations |
Pinout & Package
D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration (G, D, S); 14.61–15.88 mm height; 8.38–9.65 mm width; 9.65–10.67 mm length; recommended minimum PCB pad: 10.668 × 9.017 mm (420 × 355 mil).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Gate (G) | Control terminal | Low-input-capacitance node requiring ≤10 V drive; 1.8 nC gate-source charge enables logic-level compatibility with microcontrollers |
| Drain (D) | High-side power output | Exposed metal tab electrically connected to drain; must be isolated from heatsink unless referenced to same potential |
| Source (S) | Power return / reference node | Common return path for load current and gate drive loop; critical for minimizing switching noise coupling into control circuitry |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | 3.6 mJ per pulse - Enables robust operation in inductive load switching without external snubbers |
| Dynamic dv/dt immunity | 4.8 V/ns - Prevents spurious turn-on during high-speed voltage transitions in bridge legs |
| Fast switching | 7.0 ns turn-on delay + 7.6 ns rise time - Reduces switching losses in high-frequency SMPS designs |
| Low gate charge | 8.2 nC total - Lowers driver power consumption and simplifies gate drive design |
| Surface-mount packaging | D2PAK footprint - Supports automated assembly and high thermal conductivity via copper-clad PCB mounting |
Applications
| DC-DC Converter Primary Switch | Brushed DC Motor Driver High-Side |
|---|---|
Use Scenario: 24 V input, 5–12 V output buck converter operating at 250 kHz with 3 A load. IC Role / Device Role / Timing Role: Main power switch controlling energy transfer through inductor; duty-cycle modulated by PWM controller. Use Value: 2.0 Ω RDS(on) limits conduction loss to <1.4 W at full load; 8.2 nC Qg ensures clean 250 kHz switching with minimal driver stress. |
Use Scenario: 24 V brushed motor controlled via H-bridge with PWM frequency of 20 kHz. IC Role / Device Role / Timing Role: High-side switch enabling bidirectional current flow; synchronized with low-side FET using dead-time control. Use Value: 250 V VDS rating accommodates back-EMF spikes >100 V; 4.8 V/ns dv/dt immunity prevents shoot-through during commutation. |
| AC-DC Auxiliary Supply Switch | Industrial Solenoid Driver |
Use Scenario: Flyback auxiliary supply powering control ICs in 400 V PFC front-end systems. IC Role / Device Role / Timing Role: Primary-side switch regulating isolated 15 V output; operates in discontinuous conduction mode. Use Value: 61 mJ EAS withstands leakage inductance energy during MOSFET turn-off; 150 °C max TJ supports sealed enclosure operation. |
Use Scenario: 24 V solenoid actuator with 500 ms ON time and 2 A steady-state current in factory automation PLC output module. IC Role / Device Role / Timing Role: Solid-state replacement for mechanical relay; driven directly from microcontroller GPIO with opto-isolation. Use Value: Repetitive avalanche capability absorbs inductive kickback without clamping diodes; 2.7 A ID sustains solenoid hold current with margin. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP2NK60ZFP | 600 V VDS, 2.0 A ID, 3.0 Ω RDS(on), TO-220FP package | Higher voltage rating but lower current and higher on-resistance; through-hole only | Choose when 600 V isolation is required and board space allows leaded package |
| IXTP2N50D2 | 500 V VDS, 2.0 A ID, 2.7 Ω RDS(on), TO-220 package | Higher voltage, lower current, larger thermal resistance (RthJC = 4.5 °C/W), no avalanche rating | Choose only for non-avalanche, lower-current 500 V applications where D2PAK footprint is unavailable |
Compared with STP2NK60ZFP and IXTP2N50D2, IRF614STRRPBF offers superior current capability (2.7 A vs. ≤2.0 A), lower RDS(on) (2.0 Ω), surface-mount D2PAK packaging for automated assembly, and verified repetitive avalanche performance-making it optimal for compact, high-reliability 250 V industrial switching applications.
Availability
IRF614STRRPBF is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, solenoid controllers, and auxiliary power supplies requiring stable component supply, RoHS-compliant sourcing, and long-term industrial lifecycle support.
Supply support for IRF614STRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, efficiency, and reliability for industrial and automotive markets.
The IRF614STRRPBF belongs to Vishay's third-generation surface-mount power MOSFET family, engineered specifically for high-current, medium-voltage switching applications demanding avalanche robustness and low gate drive requirements.
FAQ
What is the maximum continuous drain current for IRF614STRRPBF at 100 °C case temperature?
The maximum continuous drain current for IRF614STRRPBF is 1.7 A when the case temperature is 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package and ensures junction temperature remains within the −55 to +150 °C operating range. Designers must verify PCB copper area and heatsinking to sustain this current reliably in end equipment.
Does IRF614STRRPBF have avalanche capability, and how is it rated?
Yes, IRF614STRRPBF is repetitively avalanche rated with 3.6 mJ energy per pulse and 2.7 A avalanche current. It also supports 61 mJ single-pulse avalanche energy under defined test conditions (VDD = 50 V, L = 13 mH, IAS = 2.7 A). These ratings are validated per JEDEC standards and enable reliable operation in inductive switching applications without external protection components.
What is the gate threshold voltage range for IRF614STRRPBF, and how does it affect drive requirements?
The gate threshold voltage (VGS(th)) for IRF614STRRPBF is specified from 2.0 V to 4.0 V at TJ = 25 °C. This range confirms logic-level compatibility with 3.3 V and 5 V microcontrollers, though full enhancement requires ≥10 V gate drive to achieve the rated 2.0 Ω RDS(on). Operating below 10 V increases on-resistance nonlinearly and must be verified per application.
Is IRF614STRRPBF RoHS-compliant, and what does the 'PbF' suffix indicate?
Yes, IRF614STRRPBF is RoHS-compliant and halogen-free. The 'PbF' suffix denotes lead (Pb)-free terminations, consistent with Vishay's material categorization per document 99912. This part meets EU RoHS Directive 2011/65/EU and is suitable for environmentally regulated industrial and consumer electronics manufacturing.
How does the D2PAK package of IRF614STRRPBF improve thermal performance compared to TO-220?
The D2PAK (TO-263) package of IRF614STRRPBF provides a junction-to-case thermal resistance of 3.5 °C/W-significantly lower than typical TO-220 devices (~4.5–6.0 °C/W)-due to its large exposed drain pad and optimized internal construction. When mounted on a 1" square FR-4 PCB, it achieves 40 °C/W junction-to-ambient, enabling higher power density and reduced heatsink dependency in space-constrained designs.
IRF614STRRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 250 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 2Ohm @ 1.6A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 8.2 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 140 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.1W (Ta), 36W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
IRF614STRRPBF FAQ
1.How can I place an order for IRF614STRRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF614STRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF614STRRPBF reliable?
The price and inventory of IRF614STRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF614STRRPBF is usually 5 days.
3.What payment methods are accepted for IRF614STRRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF614STRRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF614STRRPBF?
IRF614STRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF614STRRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF614STRRPBF?
For technical support, including IRF614STRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF614STRRPBF requirements.
6.How does Aetrix verify that IRF614STRRPBF is sourced from the original manufacturer or authorized distributors?
All IRF614STRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF614STRRPBF meets industry standards.
7.What is the process for return or replacement of IRF614STRRPBF?
All IRF614STRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF614STRRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF614STRRPBF part is unused and in its original packaging.
Return procedure for IRF614STRRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRF614STRRPBF Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
