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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF620

Name: IRF620
Brand: Vishay Siliconix
SKU: IRF620
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF620

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRF620.pdf

Description:: MOSFET N-CH 200V 5.2A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF620 from Vishay Siliconix is a 200 V, 5.2 A N-channel enhancement-mode power MOSFET in TO-220AB package, featuring 0.80 Ω R_DS(on) at V_GS = 10 V, 14 nC total gate charge, and repetitive avalanche rating - used in offline switch-mode power supplies, DC-DC converters, and motor control circuits.

For engineers reviewing the IRF620 datasheet, IRF620 pinout, IRF620 application, or IRF620 equivalent, key selection criteria include its 200 V V_DS, 5.2 A continuous drain current at T_C = 25 °C, TO-220AB thermal resistance (R_thJC = 2.5 °C/W), fast switching (t_r = 22 ns), and body diode recovery time (t_rr = 150–300 ns).

Technical Context

The IRF620 operates as a voltage-controlled unidirectional switch with gate threshold voltage of 2.0–4.0 V and exhibits dynamic dv/dt immunity up to 5.0 V/ns. Its ruggedized third-generation silicon design supports repetitive avalanche energy of 5.0 mJ and single-pulse avalanche energy of 110 mJ under defined test conditions.

Thermal performance is defined by maximum junction temperature of +150 °C, case-to-sink thermal resistance of 0.50 °C/W (flat greased surface), and linear derating factor of 0.40 W/°C above 25 °C. The device integrates an intrinsic body diode with V_SD = 1.8 V at I_S = 5.2 A and Q_rr = 0.91–1.8 μC.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200 V - maximum blocking voltage for AC line-connected topologies like flyback and forward converters
R_DS(on)	0.80 Ω @ V_GS = 10 V - conduction loss of ~2.0 W at 5 A, enabling efficient operation below 50 W dissipation
Q_g	14 nC - gate drive energy requirement determines driver sizing and switching loss in hard-switched applications
I_D (continuous)	5.2 A @ T_C = 25 °C - usable current level with heatsinking; derates to 3.3 A at 100 °C case temperature
E_AS	110 mJ - unclamped inductive switching capability enables robustness in relay/snubberless designs
t_rr	150–300 ns - body diode recovery speed impacts cross-conduction losses in synchronous rectification and half-bridge configurations
P_D	50 W @ T_C = 25 °C - thermal limit set by TO-220AB package; requires external heatsink for sustained operation

Pinout & Package

IRF620 is housed in TO-220AB package: insulated tab, vertical lead orientation, 3-pin through-hole configuration with standard mounting hole (6-32 or M3 screw, 10 lbf·in torque). Thermal resistance from junction to case is 2.5 °C/W; case-to-sink resistance is 0.50 °C/W with greased flat interface.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main high-side current path	Connected to heat sink via metal tab; carries full load current and must be isolated if tab is not electrically tied to drain
Gate (G)	Voltage-controlled switch input	High-impedance node requiring low-inductance routing; 10 V drive ensures full enhancement and minimal R_DS(on)
Source (S)	Reference node and return path	Common connection point for gate drive reference and load return; internal source inductance (L_S = 7.5 nH) affects switching waveform fidelity

Key Features

Feature	Design Value
Repetitive avalanche rated	Supports 5.2 A I_AR and 5.0 mJ E_AR without degradation - eliminates need for external snubbers in inductive load switching
Dynamic dv/dt rating	5.0 V/ns immunity - prevents false turn-on in high-noise environments such as industrial motor drives and SMPS primary side
Fast switching	22 ns rise time and 13 ns fall time - reduces transition losses in 50–100 kHz power converters
Low gate charge	14 nC Q_g with 3.0 nC Q_gs and 7.9 nC Q_gd - enables use of low-power gate drivers and minimizes drive-stage power consumption
TO-220AB package	Industry-standard outline with 2.5 °C/W R_thJC - allows direct replacement in legacy designs and compatibility with common heatsink clips

Applications

Offline AC-DC Adapters	DC-DC Buck Converters
Use Scenario: 24–48 V input, 5–12 V output, 20–40 W isolated flyback converter for industrial sensors and IoT gateways. IC Role / Device Role / Timing Role: Primary-side switching transistor controlling energy transfer across transformer; operated at 65–100 kHz. Use Value: 200 V V_DS safely withstands reflected output voltage plus leakage spike; 0.80 Ω R_DS(on) limits conduction loss to <2 W at full load.	Use Scenario: 48 V bus step-down to 12 V/3 A for telecom power shelves and PoE injectors. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch in non-isolated buck topology; driven by dedicated gate driver IC. Use Value: Fast t_r/t_f (22/13 ns) and low Q_g reduce switching loss; body diode t_rr < 300 ns avoids shoot-through during dead-time.
Brushed DC Motor Control	LED Constant-Current Drivers
Use Scenario: 24 V, 3–5 A H-bridge driver for small industrial actuators and valve control modules. IC Role / Device Role / Timing Role: Low-side switching element in half-bridge leg; PWM frequency 1–20 kHz. Use Value: Repetitive avalanche rating absorbs inductive kickback during PWM off-time; 5.2 A I_D supports peak stall currents without derating.	Use Scenario: Constant-current dimmable LED driver for architectural lighting (36–72 V string, 350–700 mA). IC Role / Device Role / Timing Role: Series pass switch regulating current through LED string using analog/PWM dimming. Use Value: Low R_DS(on) minimizes voltage drop and thermal rise; TO-220AB mechanical robustness supports long-life outdoor deployment.

Offline AC-DC Adapters

DC-DC Buck Converters

Use Scenario: 24–48 V input, 5–12 V output, 20–40 W isolated flyback converter for industrial sensors and IoT gateways.

IC Role / Device Role / Timing Role: Primary-side switching transistor controlling energy transfer across transformer; operated at 65–100 kHz.

Use Value: 200 V V_DS safely withstands reflected output voltage plus leakage spike; 0.80 Ω R_DS(on) limits conduction loss to <2 W at full load.

Use Scenario: 48 V bus step-down to 12 V/3 A for telecom power shelves and PoE injectors.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch in non-isolated buck topology; driven by dedicated gate driver IC.

Use Value: Fast t_r/t_f (22/13 ns) and low Q_g reduce switching loss; body diode t_rr < 300 ns avoids shoot-through during dead-time.

Brushed DC Motor Control

LED Constant-Current Drivers

Use Scenario: 24 V, 3–5 A H-bridge driver for small industrial actuators and valve control modules.

IC Role / Device Role / Timing Role: Low-side switching element in half-bridge leg; PWM frequency 1–20 kHz.

Use Value: Repetitive avalanche rating absorbs inductive kickback during PWM off-time; 5.2 A I_D supports peak stall currents without derating.

Use Scenario: Constant-current dimmable LED driver for architectural lighting (36–72 V string, 350–700 mA).

IC Role / Device Role / Timing Role: Series pass switch regulating current through LED string using analog/PWM dimming.

Use Value: Low R_DS(on) minimizes voltage drop and thermal rise; TO-220AB mechanical robustness supports long-life outdoor deployment.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP20NM20	200 V V_DS, 20 A I_D, 0.12 Ω R_DS(on), TO-220FP package (insulated flange)	Higher current rating and lower on-resistance, but larger gate charge (34 nC) and different thermal interface (full-pack insulation)	Preferred where higher current headroom and isolation are required; not drop-in due to different mounting and drive strength needs
FQP20N20	200 V V_DS, 20 A I_D, 0.13 Ω R_DS(on), TO-220 package (non-insulated tab)	Lower R_DS(on) and higher I_D, but no specified repetitive avalanche rating and higher Q_g (32 nC)	Selected for cost-sensitive high-current linear or switching apps where avalanche robustness is not critical

Compared with STP20NM20 and FQP20N20, the IRF620 offers verified repetitive avalanche capability and optimized gate charge for medium-power SMPS, while maintaining TO-220AB compatibility and proven reliability in thermally constrained designs up to 50 W.

Availability

IRF620 is available at Aetrix Electronics and suitable for offline AC-DC adapters, brushed DC motor control, and LED constant-current drivers requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for IRF620 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, efficiency, and reliability across industrial and automotive markets.

The IRF620 belongs to Vishay's third-generation power MOSFET family engineered for commercial-industrial switch-mode power conversion, balancing low R_DS(on), fast switching, and avalanche survivability in TO-220AB packaging.

FAQ

What is the maximum continuous drain current for IRF620 at 100 °C case temperature?

The IRF620 supports 3.3 A continuous drain current at T_C = 100 °C, per its absolute maximum ratings table. This derating reflects thermal limitations of the TO-220AB package and must be validated with actual heatsink performance and ambient conditions. The IRF620 datasheet specifies linear derating factor of 0.40 W/°C above 25 °C, confirming safe operation within thermal design margins when properly mounted.

Does IRF620 have a built-in body diode, and what are its key parameters?

Yes, the IRF620 integrates a parasitic body diode inherent to its vertical N-channel MOSFET structure. Key parameters include 5.2 A continuous source-drain current (I_S), 18 A pulsed rating (I_SM), 1.8 V forward voltage (V_SD) at 5.2 A and 25 °C, and reverse recovery time (t_rr) of 150–300 ns. These values are measured under standardized conditions and directly impact performance in freewheeling and synchronous rectification roles.

Is IRF620 suitable for avalanche operation, and how is it rated?

Yes, the IRF620 is explicitly rated for repetitive avalanche operation with I_AR = 5.2 A and E_AR = 5.0 mJ, and single-pulse avalanche energy E_AS = 110 mJ. These ratings are validated per Vishay's test conditions (V_DD = 50 V, L = 6.1 mH, R_g = 25 Ω) and enable reliable unclamped inductive switching without external protection components in appropriately designed circuits.

What is the gate threshold voltage range for IRF620, and how does it affect drive requirements?

The IRF620 has a gate-source threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V at I_D = 250 μA. This means logic-level drive (e.g., 5 V microcontroller outputs) may partially enhance the device but full conduction requires ≥10 V gate drive to achieve specified R_DS(on) = 0.80 Ω. Using 10 V ensures consistent low on-resistance and avoids operating in the linear region where power dissipation rises sharply.

How does the TO-220AB package of IRF620 differ from standard TO-220 in thermal and mounting terms?

The TO-220AB package used by IRF620 features an insulated metal tab, allowing direct mounting to a grounded heatsink without electrical isolation hardware. Its thermal resistance is R_thJC = 2.5 °C/W (junction-to-case) and R_thCS = 0.50 °C/W (case-to-sink with greased flat surface). Unlike non-insulated TO-220 variants, TO-220AB eliminates risk of short-circuiting the drain to chassis ground, simplifying mechanical integration in safety-critical power stages.

IRF620 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 5.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 800mOhm @ 3.1A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 14 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 260 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 50W (Tc)

Operating Temperature:: -65°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRF620 FAQ

1.How can I place an order for IRF620 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF620 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF620 reliable?

The price and inventory of IRF620 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF620 is usually 5 days.

3.What payment methods are accepted for IRF620?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF620 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF620?

IRF620 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF620 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF620?

For technical support, including IRF620 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF620 requirements.

6.How does Aetrix verify that IRF620 is sourced from the original manufacturer or authorized distributors?

All IRF620 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF620 meets industry standards.

7.What is the process for return or replacement of IRF620?

All IRF620 units undergo pre-shipment inspection (PSI). If there is an issue with IRF620, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF620 part is unused and in its original packaging.

Return procedure for IRF620:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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