My Inquiry
My Account
Vishay Siliconix IRF620PBF-BE3
- Part No.:
- IRF620PBF-BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
IRF620PBF-BE3.pdf
- Description:
- MOSFET N-CH 200V 5.2A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:2,494
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IRF620PBF-BE3 from Vishay Siliconix is a 200 V, 5.2 A N-channel power MOSFET in TO-220AB package, featuring 0.80 Ω RDS(on) at VGS = 10 V, 14 nC total gate charge, and repetitive avalanche rating-designed for switch-mode power supplies, DC-DC converters, and motor control circuits requiring rugged, cost-effective high-voltage switching.
For engineers reviewing the IRF620PBF-BE3 datasheet, IRF620PBF-BE3 pinout, IRF620PBF-BE3 application, or IRF620PBF-BE3 equivalent, key selection criteria include its 200 V VDS, 5.2 A continuous drain current at TC = 25 °C, 2.5 °C/W junction-to-case thermal resistance, and lead-free/halogen-free compliance per ordering code IRF620PBF-BE3.
Technical Context
This third-generation power MOSFET employs planar V-groove technology to achieve low on-resistance with robust avalanche capability. Its dynamic dv/dt rating of 5.0 V/ns and 110 mJ single-pulse avalanche energy support reliable operation in inductive switching environments.
The device integrates an intrinsic body diode with 150–300 ns reverse recovery time and 0.91–1.8 μC Qrr, enabling moderate-frequency hard-switched topologies. Gate drive simplicity is ensured by a 2.0–4.0 V threshold voltage and low 0.8–3.5 Ω gate input resistance.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 200 V - supports primary-side switching in offline SMPS up to 170 V AC mains with margin |
| RDS(on) @ VGS = 10 V | 0.80 Ω - limits conduction loss to ≤2.0 W at 5.2 A, enabling TO-220AB thermal handling without forced cooling |
| Qg | 14 nC - determines gate driver current requirement (~1.4 A peak for 10 ns rise time) |
| ID (continuous, TC = 25 °C) | 5.2 A - defines maximum steady-state load current with case heatsinking |
| EAS | 110 mJ - enables unclamped inductive switching survival in relay drivers or solenoid controls |
| TJ range | −55 to +150 °C - qualifies for industrial ambient and internal temperature excursions in enclosed power modules |
Pinout & Package
IRF620PBF-BE3 uses the industry-standard TO-220AB package with isolated tab (drain-connected), offering low 2.5 °C/W junction-to-case thermal resistance and compatibility with widely available mechanical mounting hardware (6-32 or M3 screw, 10 lbf·in torque).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Accepts 10 V logic-level drive; 2.0–4.0 V VGS(th) ensures turn-on with standard microcontroller GPIO or dedicated gate drivers |
| D (Drain) | High-side power terminal | Internally connected to metal tab; requires electrical isolation when mounted to heatsink unless system ground reference permits |
| S (Source) | Power return / reference node | Serves as local ground reference for gate drive; source inductance (7.5 nH) impacts switching waveform ringing in high-di/dt applications |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | 5.2 A IAR, 5.0 mJ EAR - enables reliable operation under transient overloads without derating in UPS or battery protection circuits |
| Fast switching | 7.2 ns td(on), 22 ns tr, 19 ns td(off), 13 ns tf - supports 100–500 kHz switching frequencies in compact DC-DC designs |
| Dynamic dv/dt immunity | 5.0 V/ns - suppresses false turn-on during high-speed voltage transients in half-bridge configurations |
| Low Qgd/Qg ratio | 7.9/14 = 0.56 - improves Miller immunity and reduces risk of shoot-through in synchronous rectifiers |
Applications
| Switch-Mode Power Supply | DC Motor Drive |
|---|---|
Use Scenario: Primary-side switching transistor in 30–60 W offline flyback converter. IC Role / Device Role / Timing Role: High-voltage N-channel power switch controlling energy transfer from AC line to transformer primary. Use Value: 200 V VDS and 110 mJ EAS withstand reflected output voltage spikes and transformer leakage inductance energy. | Use Scenario: H-bridge low-side switch for 24 V brushed DC motor (≤100 W). IC Role / Device Role / Timing Role: Synchronous power switch managing bidirectional current flow and PWM speed control. Use Value: 0.80 Ω RDS(on) minimizes I²R losses at 5 A stall current; 5.2 A continuous rating supports intermittent peak loads. |
| LED Driver | Industrial Relay/Solenoid Control |
Use Scenario: Constant-current buck controller for high-brightness LED strings (36–48 V bus). IC Role / Device Role / Timing Role: Main power switch regulating average LED current via high-frequency PWM. Use Value: 14 nC Qg enables efficient gate driving at 200–300 kHz, reducing switching loss while maintaining thermal stability. | Use Scenario: Snubberless inductive load switch for 24/48 V DC control relays or pneumatic solenoids. IC Role / Device Role / Timing Role: Unclamped inductive switching element absorbing stored coil energy via avalanche mode. Use Value: Repetitive avalanche rating (5.2 A, 5.0 mJ) eliminates need for external flyback diodes in space-constrained PLC I/O modules. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP20NM20 | 200 V VDS, 20 A ID, 0.12 Ω RDS(on), TO-220FP package (lower PD = 30 W) | Higher current, lower RDS(on), but reduced power dissipation margin due to smaller package | Select when higher efficiency at >3 A is critical and thermal design accommodates lower PD |
| FQP20N20 | 200 V VDS, 20 A ID, 0.13 Ω RDS(on), TO-220 package, no avalanche rating specified | Higher current and lower on-resistance, but lacks documented repetitive avalanche capability | Select for non-inductive, low-stress switching where avalanche robustness is not required |
Compared with STP20NM20 and FQP20N20, IRF620PBF-BE3 trades higher RDS(on) for proven repetitive avalanche performance and full 50 W power dissipation in TO-220AB-making it preferable for cost-sensitive, thermally constrained, or inductive-load applications where reliability under transient stress is essential.
Availability
IRF620PBF-BE3 is available at Aetrix Electronics and suitable for switch-mode power supplies, DC motor drives, LED drivers, and industrial relay controls requiring stable component supply across production lifecycles.
Supply support for IRF620PBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix, a division of Vishay Intertechnology, designs and manufactures discrete semiconductors with emphasis on power handling, reliability, and ruggedized packaging for industrial and automotive markets.
The IRF620PBF-BE3 belongs to Vishay's third-generation power MOSFET family, engineered specifically for cost-effective, high-voltage switching in commercial and industrial power conversion where avalanche tolerance and thermal robustness are mandatory.
FAQ
What is the maximum continuous drain current for IRF620PBF-BE3 at 100 °C case temperature?
The IRF620PBF-BE3 supports 3.3 A continuous drain current at TC = 100 °C, derived from its 5.2 A rating at 25 °C and linear derating factor of 0.40 W/°C. This reflects thermal limitation of the TO-220AB package rather than silicon capability-designers must ensure heatsink interface resistance and ambient conditions maintain TC ≤ 100 °C for sustained 3.3 A operation.
Does IRF620PBF-BE3 have a specified body diode reverse recovery time?
Yes, IRF620PBF-BE3 specifies a body diode reverse recovery time (trr) of 150–300 ns at TJ = 25 °C, IF = 4.8 A, and dI/dt = 100 A/μs. This parameter is critical for synchronous rectification and freewheeling paths; designers should account for associated Qrr (0.91–1.8 μC) in loss calculations and layout to minimize ringing.
Is IRF620PBF-BE3 RoHS-compliant and halogen-free?
Yes, IRF620PBF-BE3 is both RoHS-compliant and halogen-free, as indicated by the "-BE3" suffix in the ordering code. This designation confirms lead-free terminations and absence of brominated flame retardants, satisfying IPC-1752A material declaration requirements for environmentally regulated electronics manufacturing.
What is the gate-source threshold voltage range for IRF620PBF-BE3?
The gate-source threshold voltage (VGS(th)) for IRF620PBF-BE3 is specified from 2.0 V to 4.0 V at VDS = VGS and ID = 250 μA. This range ensures consistent turn-on behavior across process variation and temperature, supporting reliable operation with 5 V TTL or 3.3 V CMOS gate drivers when combined with appropriate gate resistor selection.
Can IRF620PBF-BE3 be used in parallel configurations?
Yes, IRF620PBF-BE3 is designed for ease of paralleling, as confirmed by Vishay's datasheet features. Its positive RDS(on) temperature coefficient promotes current sharing, and low gate input resistance (0.8–3.5 Ω) simplifies matched gate drive layout-critical for high-current inverters or redundant power stages where multiple IRF620PBF-BE3 units share load.
IRF620PBF-BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 200 V
- Current - Continuous Drain (Id) @ 25°C:
- 5.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 800mOhm @ 3.1A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 14 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 260 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 50W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
IRF620PBF-BE3 FAQ
1.How can I place an order for IRF620PBF-BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF620PBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF620PBF-BE3 reliable?
The price and inventory of IRF620PBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF620PBF-BE3 is usually 5 days.
3.What payment methods are accepted for IRF620PBF-BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF620PBF-BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF620PBF-BE3?
IRF620PBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF620PBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF620PBF-BE3?
For technical support, including IRF620PBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF620PBF-BE3 requirements.
6.How does Aetrix verify that IRF620PBF-BE3 is sourced from the original manufacturer or authorized distributors?
All IRF620PBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF620PBF-BE3 meets industry standards.
7.What is the process for return or replacement of IRF620PBF-BE3?
All IRF620PBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRF620PBF-BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF620PBF-BE3 part is unused and in its original packaging.
Return procedure for IRF620PBF-BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRF620PBF-BE3 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
