Vishay Siliconix IRF620S

Overview

IRF620S from Vishay Siliconix is a 200 V, 5.2 A N-channel enhancement-mode power MOSFET in D2PAK (TO-263) package, featuring 0.80 Ω R_DS(on) at V_GS = 10 V, 14 nC total gate charge, and repetitive avalanche rating-designed for high-voltage DC-DC converters, motor control stages, and industrial SMPS primary-side switching.

For engineers reviewing the IRF620S datasheet, IRF620S pinout, IRF620S application, or IRF620S equivalent, key selection criteria include its 200 V V_DS, 5.2 A continuous drain current at T_C = 25 °C, 50 W maximum power dissipation, 2.5 °C/W junction-to-case thermal resistance, and fast 7.2 ns turn-on delay with 22 ns rise time.

Technical Context

The IRF620S employs a third-generation silicon process optimized for ruggedized high-voltage operation, with dynamic dv/dt rating up to 5.0 V/ns and unclamped inductive switching capability (E_AS = 110 mJ). Its internal body diode supports freewheeling in flyback and buck topologies.

Designed for surface-mount implementation on FR-4 PCBs, the device delivers 3.0 W power dissipation in standard PCB-mount configuration and leverages low-inductance D2PAK packaging-featuring 4.5 nH internal drain inductance and 7.5 nH source inductance-to minimize switching losses and voltage overshoot during hard commutation.

Key Specifications

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain tab for thermal and electrical connection; 3-terminal configuration (G, D, S); 15.88 mm × 10.67 mm footprint; 4.83 mm height; RoHS-compliant lead-free and halogen-free construction.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP20NM50FP and IRF640NPbF, the IRF620S offers optimal balance of voltage rating, surface-mount compatibility, thermal performance via D2PAK, and gate drive simplicity-making it preferred for space-constrained, medium-power industrial converters where 200 V and 5.2 A are sufficient.

Availability

IRF620S is available at Aetrix Electronics and suitable for industrial motor control, AC-DC power supplies, and DC-DC converters requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.

Supply support for IRF620S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and high-voltage performance.

The IRF620S belongs to Vishay's third-generation power MOSFET family engineered for high-voltage switching in industrial power conversion, motor drives, and lighting-prioritizing avalanche robustness, fast switching, and surface-mount thermal efficiency.

FAQ

What is the maximum continuous drain current rating for the IRF620S at 100 °C case temperature?

The IRF620S has a maximum continuous drain current of 3.3 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package under sustained high-temperature operation and must be applied in thermal design calculations alongside its 2.5 °C/W R_thJC. The IRF620S remains fully functional within this limit across its -55 °C to +150 °C operating junction range.

Does the IRF620S have a built-in body diode, and what are its key recovery characteristics?

Yes, the IRF620S integrates a parasitic body diode inherent to its N-channel MOSFET structure. Its reverse recovery time (t_rr) is 150–300 ns at T_J = 25 °C, with reverse recovery charge (Q_rr) of 0.91–1.8 μC. These values are measured at I_F = 4.8 A and di/dt = 100 A/μs. The IRF620S body diode supports freewheeling in inductive loads but is not optimized for synchronous rectification-designers should verify t_rr impact in high-frequency topologies.

Can the IRF620S be used in avalanche mode, and what is its rated single-pulse energy?

Yes, the IRF620S is explicitly rated for repetitive and single-pulse avalanche operation. Its single-pulse avalanche energy (E_AS) is 110 mJ under test conditions of V_DD = 50 V, I_AS = 5.2 A, L = 6.1 mH, and R_g = 25 Ω. This rating enables robust handling of inductive switching transients in relay drivers and motor controllers without external clamping-provided pulse width and duty cycle remain within datasheet limits.

What is the gate threshold voltage range for the IRF620S, and how does it affect logic-level drive compatibility?

The IRF620S has a gate-source threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V at I_D = 250 μA. While this allows turn-on with 5 V logic signals, full enhancement requires V_GS ≥ 10 V to achieve its specified 0.80 Ω R_DS(on). Therefore, the IRF620S is not a logic-level MOSFET; it needs a dedicated gate driver or level-shifting circuit when driven from 3.3 V or 5 V microcontrollers. The IRF620S gate leakage (±100 nA) remains negligible across its ±20 V V_GS rating.

What thermal resistance values apply to the IRF620S in PCB-mount versus heatsink-mount configurations?

The IRF620S specifies two thermal resistances: maximum junction-to-case (R_thJC) is 2.5 °C/W-applicable when the drain tab is mounted to an external heatsink-and maximum junction-to-ambient (R_thJA) is 40 °C/W for PCB-mount operation on a 1" square FR-4 board. The latter value assumes standard copper area and airflow; actual R_thJA improves significantly with added copper pour or forced convection. These values directly determine allowable power dissipation in the IRF620S design.