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Vishay Siliconix IRF620STRLPBF
- Part No.:
- IRF620STRLPBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRF620STRLPBF.pdf
- Description:
- MOSFET N-CH 200V 5.2A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:811
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Product details
Overview
IRF620STRLPBF from Vishay Siliconix is a 200 V, 5.2 A N-channel surface-mount power MOSFET in D2PAK (TO-263) package, featuring 0.80 Ω RDS(on) at VGS = 10 V, 14 nC total gate charge, and repetitive avalanche rating - designed for high-current DC-DC converters, motor control stages, and industrial power switching.
For engineers reviewing the IRF620STRLPBF datasheet, IRF620STRLPBF pinout, IRF620STRLPBF application, or IRF620STRLPBF equivalent, key selection criteria include its 200 V blocking capability, low on-resistance with fast 7.2 ns turn-on delay, rugged unclamped inductive switching performance (EAS = 110 mJ), and PCB-mount thermal dissipation of 3.0 W.
Technical Context
This third-generation power MOSFET employs planar V-groove silicon technology optimized for fast switching and robust avalanche operation. Its gate threshold voltage (2.0–4.0 V) enables standard 10 V logic-level drive, while dynamic parameters - including Ciss = 260 pF, Coss = 100 pF, and Crss = 30 pF - support stable high-frequency operation up to several hundred kHz.
The device integrates a low-inductance D2PAK package with internal drain (LD = 4.5 nH) and source (LS = 7.5 nH) inductances, enabling clean switching waveforms and reduced EMI. Its body diode exhibits trr = 150–300 ns and Qrr = 0.91–1.8 μC, supporting synchronous rectification and flyback recovery in hard-switched topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 200 V - supports 170 V DC bus designs with 15% margin for transients |
| RDS(on) | 0.80 Ω @ VGS = 10 V - delivers ≤2.0 W conduction loss at 5 A continuous current |
| Qg | 14 nC - enables efficient gate driving with <100 mW average gate power at 100 kHz |
| ID (TC = 100 °C) | 3.3 A - defines safe continuous current under typical heatsink-limited PCB mounting |
| EAS | 110 mJ - sustains single-pulse inductive energy without failure in relay/snubberless designs |
| tr/tf | 22 ns / 13 ns - ensures minimal overlap loss in hard-switched half-bridge configurations |
| RthJC | 2.5 °C/W - allows direct thermal path to heatsink via exposed drain pad for high-power density layouts |
Pinout & Package
D2PAK (TO-263) surface-mount package with isolated gate, high-current drain tab, and Kelvin-source-compatible three-terminal layout. Exposed drain pad provides primary thermal and electrical connection to PCB ground plane.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Receives 10 V logic-level signal; 3.0 nC Qgs enables fast turn-on with minimal driver stress |
| D (Drain) | High-side power terminal | Exposed copper tab - must be soldered to large copper area for thermal management and low-inductance return path |
| S (Source) | Power reference node | Common return for load current and gate drive loop; critical for minimizing switching noise coupling |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | Withstands 5.2 A IAR and 5.0 mJ EAR continuously - eliminates need for external snubbers in inductive load switching |
| Dynamic dv/dt immunity | Rated 5.0 V/ns - prevents false turn-on during high-slew-rate voltage transients in bridge configurations |
| Low gate input resistance | 0.8–3.5 Ω - simplifies RC gate network design and improves ESD robustness without external damping |
| RoHS-compliant & halogen-free | Lead (Pb)-free and halogen-free construction - meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1) for reflow compatibility |
| Simple drive requirements | VGS(th) = 2.0–4.0 V - compatible with microcontroller GPIOs and standard gate drivers without level-shifting |
Applications
| Industrial Motor Drives | DC-DC Converter Switches |
|---|---|
Use Scenario: Half-bridge gate driver stage in 24–48 V BLDC motor controllers for HVAC actuators and conveyor systems. IC Role / Device Role / Timing Role: High-side N-channel switch with integrated body diode used for freewheeling and PWM-controlled power delivery. Use Value: 0.80 Ω RDS(on) minimizes I²R losses at 4 A continuous load; 110 mJ EAS handles back-EMF spikes without clamping diodes. |
Use Scenario: Primary-side switch in non-isolated buck regulators powering PLC I/O modules and sensor interfaces. IC Role / Device Role / Timing Role: Synchronous rectifier replacement in high-efficiency 200 kHz switching supplies. Use Value: Fast 22 ns rise time and low Qgd/Qgs ratio (2.6:1) reduce switching loss and improve duty-cycle fidelity. |
| AC-DC Auxiliary Supplies | LED Driver Power Stages |
Use Scenario: Discrete switch in offline flyback auxiliary supplies for smart meter and industrial gateway power rails. IC Role / Device Role / Timing Role: Self-oscillating or PWM-controlled main switch handling 100–200 V AC-derived DC link. Use Value: 200 V VDS rating accommodates 176 V peak rectified input with safety margin; body diode trr < 300 ns prevents cross-conduction. |
Use Scenario: Constant-current switch in high-brightness LED string drivers for street lighting and signage. IC Role / Device Role / Timing Role: Low-duty-cycle, high-peak-current switch modulating 350–700 mA LED loads. Use Value: 18 A pulsed drain current (IDM) supports 5× overcurrent headroom; RthJC = 2.5 °C/W enables compact heatsinking. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP20NM20 | 200 V, 20 A, RDS(on) = 0.12 Ω @ 10 V, TO-220 package | Higher current rating but through-hole only; lacks D2PAK's PCB thermal efficiency | Select when board space permits larger footprint and higher continuous current is required |
| IXTP20N20P | 200 V, 20 A, RDS(on) = 0.13 Ω @ 10 V, TO-220FP package | Vertical power MOSFET with lower RDS(on) but no avalanche rating; not repetitive avalanche qualified | Choose for cost-sensitive, non-avalanche-critical applications where lower conduction loss outweighs ruggedness needs |
Compared with STP20NM20 and IXTP20N20P, IRF620STRLPBF trades off absolute current capacity and ultra-low RDS(on) for superior surface-mount thermal performance, verified repetitive avalanche capability, and tighter gate charge control - making it optimal for space-constrained, reliability-critical industrial power stages.
Availability
IRF620STRLPBF is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC converter switches, and AC-DC auxiliary supplies requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant manufacturing.
Supply support for IRF620STRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing applications.
The IRF620S family delivers third-generation planar MOSFETs engineered for ruggedized switching in high-voltage, medium-current power conversion - balancing speed, avalanche strength, and manufacturability in surface-mount form factors.
FAQ
What is the maximum continuous drain current for IRF620STRLPBF at 100 °C case temperature?
The maximum continuous drain current for IRF620STRLPBF is 3.3 A when the case temperature (TC) is maintained at 100 °C. This value reflects thermal derating due to junction-to-case thermal resistance (RthJC = 2.5 °C/W) and ensures safe operation within the 150 °C maximum junction temperature limit. The IRF620STRLPBF achieves this rating using its D2PAK package's exposed drain pad for efficient heat transfer to the PCB.
Does IRF620STRLPBF support logic-level gate drive?
IRF620STRLPBF is not a logic-level MOSFET; its gate threshold voltage (VGS(th)) ranges from 2.0 V to 4.0 V, and full enhancement requires VGS = 10 V to achieve the specified 0.80 Ω RDS(on). While it may partially turn on with 5 V drive, the resulting RDS(on) increases significantly - the IRF620STRLPBF is intended for standard 10 V gate drivers, not 3.3 V or 5 V microcontroller outputs without buffering.
What is the avalanche energy rating of IRF620STRLPBF, and how is it tested?
IRF620STRLPBF is rated for 110 mJ single-pulse avalanche energy (EAS) and 5.0 mJ repetitive avalanche energy (EAR). EAS is measured under unclamped inductive switching conditions: VDD = 50 V, IAS = 5.2 A, TJ = 25 °C, with pulse width limited by junction temperature. The IRF620STRLPBF's repetitive rating confirms suitability for circuits with recurring inductive transients, such as relay drivers and solenoid controls.
Can IRF620STRLPBF be paralleled with identical units for higher current handling?
Yes, IRF620STRLPBF supports paralleling due to its positive temperature coefficient of RDS(on), which promotes current sharing as junction temperature rises. Successful paralleling requires matched gate drive paths, symmetrical PCB layout, and individual gate resistors (e.g., 10–25 Ω) to damp oscillation. The IRF620STRLPBF's low gate input resistance (0.8–3.5 Ω) and ease-of-paralleling feature make it suitable for scalable power stage designs.
What is the thermal resistance from junction to ambient for IRF620STRLPBF in standard PCB mount?
When mounted on a 1" square FR-4 PCB, the IRF620STRLPBF has a maximum junction-to-ambient thermal resistance (RthJA) of 40 °C/W. This value assumes standard JEDEC test conditions and enables 3.0 W maximum power dissipation at 25 °C ambient. For higher power, the IRF620STRLPBF's RthJC = 2.5 °C/W allows direct heatsink attachment to the exposed drain pad to bypass PCB limitations.
IRF620STRLPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 200 V
- Current - Continuous Drain (Id) @ 25°C:
- 5.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 800mOhm @ 3.1A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 14 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 260 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3W (Ta), 50W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
IRF620STRLPBF FAQ
1.How can I place an order for IRF620STRLPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF620STRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF620STRLPBF reliable?
The price and inventory of IRF620STRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF620STRLPBF is usually 5 days.
3.What payment methods are accepted for IRF620STRLPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF620STRLPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF620STRLPBF?
IRF620STRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF620STRLPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF620STRLPBF?
For technical support, including IRF620STRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF620STRLPBF requirements.
6.How does Aetrix verify that IRF620STRLPBF is sourced from the original manufacturer or authorized distributors?
All IRF620STRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF620STRLPBF meets industry standards.
7.What is the process for return or replacement of IRF620STRLPBF?
All IRF620STRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF620STRLPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF620STRLPBF part is unused and in its original packaging.
Return procedure for IRF620STRLPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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