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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF624

Name: IRF624
Brand: Vishay Siliconix
SKU: IRF624
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF624

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRF624.pdf

Description:: MOSFET N-CH 250V 4.4A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF624 from Vishay Siliconix is a 250 V, 4.4 A N-channel enhancement-mode power MOSFET in TO-220AB package, featuring 1.1 Ω R_DS(on) at V_GS = 10 V, 14 nC total gate charge, and repetitive avalanche rating-designed for mid-power switching in DC-DC converters, motor controls, and lamp ballasts.

For engineers reviewing the IRF624 datasheet, IRF624 pinout, IRF624 application, or IRF624 equivalent, key selection criteria include its 250 V V_DS, 4.4 A continuous drain current at T_C = 25 °C, 2.5 °C/W junction-to-case thermal resistance, and fast 7 ns turn-on delay-critical for reliable hard-switched industrial power stages.

Technical Context

The IRF624 employs a third-generation planar vertical DMOS structure optimized for ruggedness and cost-effective switching up to ~50 W dissipation. Its 1.1 Ω on-resistance balances conduction loss and die size, while 14 nC gate charge enables efficient drive with standard gate drivers.

Rated for repetitive avalanche (I_AR = 4.4 A, E_AR = 5.0 mJ), it supports unclamped inductive switching without external snubbers in flyback or relay-drive topologies. The TO-220AB package provides low R_thJC (2.5 °C/W) and mechanical compatibility with industry-standard heatsinks.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	250 V - Supports input voltages up to 200 V DC in offline or high-voltage DC-DC designs with margin.
R_DS(on) @ V_GS = 10 V	1.1 Ω - Delivers ≤20 W conduction loss at 4.4 A, enabling compact thermal design in 25–50 W applications.
Q_g	14 nC - Compatible with low-current gate drivers (e.g., TC4420, UCC27531); enables <100 ns switching transitions at 100 kHz.
I_D (continuous) @ T_C = 25 °C	4.4 A - Sustains full load in 50 W resistive or inductive loads with proper heatsinking.
E_AS	100 mJ - Absorbs single-pulse inductive energy from 8.3 mH coils at 4.4 A without failure (per fig. 12).
T_J range	−55 to +150 °C - Qualified for industrial ambient environments including motor control enclosures and power supplies.

Pinout & Package

IRF624 is housed in a TO-220AB package with isolated tab (drain-connected), offering low thermal resistance (R_thJC = 2.5 °C/W) and mechanical robustness for bolt-down heatsink mounting.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level drive; 2.0–4.0 V threshold enables compatibility with microcontroller GPIOs via level-shifting.
D (Drain)	High-side power terminal	Internally connected to metal tab; must be electrically isolated from heatsink unless system ground reference permits.
S (Source)	Power return / reference node	Serves as local ground reference for gate drive; source inductance (L_S = 7.5 nH) impacts switching ringing in high-dI/dt layouts.

Key Features

Feature	Design Value
Repetitive avalanche rated	Withstands 4.4 A repetitive avalanche current (I_AR) and 5.0 mJ energy (E_AR)-enables reliable operation in inductive load switching without snubber circuits.
Dynamic dV/dt rating	4.8 V/ns peak diode recovery dV/dt-prevents false turn-on during fast voltage transients across drain-source in bridge configurations.
Low gate charge	14 nC total gate charge reduces driver power loss and simplifies gate drive design for 50–200 kHz SMPS applications.
Ruggedized device design	Third-generation planar MOSFET structure with enhanced body diode softness (t_rr = 200–400 ns) and reduced Q_rr (0.93–1.9 μC) for lower EMI in flyback converters.

Applications

AC-DC Adapter Power Stage	Lamp Ballast Control
Use Scenario: Switching element in 30–40 W flyback converter for universal-input AC-DC adapters. IC Role / Device Role / Timing Role: Primary-side power switch operating at 65–100 kHz with self-supplied gate drive. Use Value: 250 V V_DS accommodates reflected output voltage plus leakage spikes; 1.1 Ω R_DS(on) limits conduction loss to <1.5 W at full load.	Use Scenario: Half-bridge switch in electronic CFL or LED lamp ballasts driving resonant LC tanks. IC Role / Device Role / Timing Role: High-side switch in discrete half-bridge topology with bootstrap gate drive. Use Value: Repetitive avalanche rating absorbs energy from resonant tank reversal; 4.4 A I_D supports 25–35 W lamp loads.
DC Motor Speed Control	Industrial Relay/Clutch Driver
Use Scenario: Low-frequency PWM switch (1–20 kHz) controlling brushed DC motors in HVAC actuators or conveyor systems. IC Role / Device Role / Timing Role: Single-ended high-side or low-side power switch interfacing with microcontroller PWM outputs. Use Value: 150 °C max junction temperature and −55 °C min storage enable operation in wide-temperature industrial enclosures; TO-220AB allows direct bolt-on heatsinking.	Use Scenario: Solid-state replacement for electromechanical relays driving solenoids, clutches, or pneumatic valves in factory automation. IC Role / Device Role / Timing Role: Inductive load switch with integrated body diode providing freewheeling path. Use Value: Body diode V_SD = 1.8 V at 4.4 A ensures low-loss freewheeling; 100 mJ E_AS withstands coil energy during forced turn-off.

AC-DC Adapter Power Stage

Lamp Ballast Control

Use Scenario: Switching element in 30–40 W flyback converter for universal-input AC-DC adapters.

IC Role / Device Role / Timing Role: Primary-side power switch operating at 65–100 kHz with self-supplied gate drive.

Use Value: 250 V V_DS accommodates reflected output voltage plus leakage spikes; 1.1 Ω R_DS(on) limits conduction loss to <1.5 W at full load.

Use Scenario: Half-bridge switch in electronic CFL or LED lamp ballasts driving resonant LC tanks.

IC Role / Device Role / Timing Role: High-side switch in discrete half-bridge topology with bootstrap gate drive.

Use Value: Repetitive avalanche rating absorbs energy from resonant tank reversal; 4.4 A I_D supports 25–35 W lamp loads.

DC Motor Speed Control

Industrial Relay/Clutch Driver

Use Scenario: Low-frequency PWM switch (1–20 kHz) controlling brushed DC motors in HVAC actuators or conveyor systems.

IC Role / Device Role / Timing Role: Single-ended high-side or low-side power switch interfacing with microcontroller PWM outputs.

Use Value: 150 °C max junction temperature and −55 °C min storage enable operation in wide-temperature industrial enclosures; TO-220AB allows direct bolt-on heatsinking.

Use Scenario: Solid-state replacement for electromechanical relays driving solenoids, clutches, or pneumatic valves in factory automation.

IC Role / Device Role / Timing Role: Inductive load switch with integrated body diode providing freewheeling path.

Use Value: Body diode V_SD = 1.8 V at 4.4 A ensures low-loss freewheeling; 100 mJ E_AS withstands coil energy during forced turn-off.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP2N250	250 V V_DS, 2.5 A I_D, 4.5 Ω R_DS(on) - higher on-resistance, lower current rating.	Lower power (<20 W) linear-regulated or low-duty-cycle switching; not suitable for 4.4 A continuous loads.	Select STP2N250 only when board space or cost constraints outweigh need for 4.4 A capability and 1.1 Ω R_DS(on).
FQP27P06	P-channel, −60 V V_DS, −27 A I_D, 0.05 Ω R_DS(on) - opposite polarity, lower voltage, much higher current.	Requires high-side gate drive with negative bias; suited for automotive 12 V loads-not a functional substitute for IRF624's 250 V N-channel role.	FQP27P06 is not a drop-in alternative; use only in new P-channel designs where polarity and voltage match system architecture.

Compared with STP2N250 and FQP27P06, the IRF624 uniquely delivers 250 V blocking with 4.4 A continuous current and 1.1 Ω on-resistance in TO-220AB-making it optimal for 30–50 W industrial switching where voltage headroom and thermal efficiency are jointly critical.

Availability

IRF624 is available at Aetrix Electronics and suitable for AC-DC adapters, lamp ballasts, DC motor controllers, and industrial relay drivers requiring stable component supply across extended production lifecycles.

Supply support for IRF624 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, computing, and automotive markets.

The IRF624 belongs to Vishay's third-generation power MOSFET family engineered for rugged, cost-effective switching in commercial-industrial power conversion-emphasizing avalanche robustness, low R_DS(on), and TO-220AB thermal performance.

FAQ

What is the maximum continuous drain current for IRF624 at 100 °C case temperature?

The IRF624 supports 2.8 A continuous drain current at T_C = 100 °C, per the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220AB package; designers must ensure heatsink interface resistance (R_thCS = 0.50 °C/W typical) and ambient conditions maintain T_J ≤ 150 °C. The IRF624 datasheet specifies linear derating above 25 °C at 0.40 W/°C.

Does IRF624 have a built-in body diode, and what are its key parameters?

Yes, the IRF624 integrates a parasitic body diode inherent to its vertical N-channel MOSFET structure. Key diode specs include 4.4 A continuous forward current (I_S), 1.8 V forward voltage (V_SD) at 4.4 A and 25 °C, 200–400 ns reverse recovery time (t_rr), and 0.93–1.9 μC reverse recovery charge (Q_rr). These values are confirmed in the "Drain-Source Body Diode Characteristics" section of the IRF624 datasheet.

Is IRF624 suitable for logic-level gate drive applications?

No, the IRF624 is not a logic-level MOSFET. Its gate threshold voltage (V_GS(th)) ranges from 2.0 V to 4.0 V, but full enhancement requires V_GS = 10 V to achieve the specified 1.1 Ω R_DS(on). Driving it with 3.3 V or 5 V logic alone results in high on-resistance (>5 Ω) and excessive conduction loss. The IRF624 requires a dedicated gate driver or level-shifter for reliable operation.

What is the avalanche energy rating of IRF624, and how is it tested?

The IRF624 is rated for 100 mJ single-pulse avalanche energy (E_AS) and 5.0 mJ repetitive avalanche energy (E_AR). E_AS is measured under unclamped inductive switching conditions: V_DD = 50 V, L = 8.3 mH, R_g = 25 Ω, I_AS = 4.4 A (per Figure 12). The IRF624's repetitive rating assumes pulse width and duty cycle limits defined in Note "a" of the Absolute Maximum Ratings table.

What package variant does IRF624PbF-BE3 correspond to, and what does the suffix mean?

IRF624PbF-BE3 is the lead (Pb)-free and halogen-free version of the IRF624 in TO-220AB package. "PbF" indicates RoHS-compliant termination finish; "BE3" denotes Vishay's bulk packaging format (tape-and-reel compatible with automated assembly). The IRF624PbF-BE3 shares identical electrical and thermal specifications with the base IRF624, differing only in environmental compliance and packaging.

IRF624 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 250 V

Current - Continuous Drain (Id) @ 25°C:: 4.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.1Ohm @ 2.6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 14 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 260 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 50W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRF624 FAQ

1.How can I place an order for IRF624 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF624 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF624 reliable?

The price and inventory of IRF624 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF624 is usually 5 days.

3.What payment methods are accepted for IRF624?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF624 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF624?

IRF624 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF624 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF624?

For technical support, including IRF624 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF624 requirements.

6.How does Aetrix verify that IRF624 is sourced from the original manufacturer or authorized distributors?

All IRF624 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF624 meets industry standards.

7.What is the process for return or replacement of IRF624?

All IRF624 units undergo pre-shipment inspection (PSI). If there is an issue with IRF624, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF624 part is unused and in its original packaging.

Return procedure for IRF624:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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