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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF624PBF-BE3

Name: IRF624PBF-BE3
Brand: Vishay Siliconix
SKU: IRF624PBF-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF624PBF-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRF624PBF-BE3.pdf

Description:: MOSFET N-CH 250V 4.4A TO220AB

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Product details

Overview

IRF624PBF-BE3 from Vishay Siliconix is a 250 V, 4.4 A N-channel power MOSFET in TO-220AB package, featuring 1.1 Ω R_DS(on) at V_GS = 10 V, 14 nC total gate charge, and repetitive avalanche rating-designed for mid-power switching in DC-DC converters, motor drives, and power supplies.

For engineers reviewing the IRF624PBF-BE3 datasheet, IRF624PBF-BE3 pinout, IRF624PBF-BE3 application, or IRF624PBF-BE3 equivalent, key selection criteria include its 250 V V_DS, 4.4 A continuous drain current at T_C = 25 °C, 2.5 °C/W junction-to-case thermal resistance, and RoHS-compliant/halogen-free construction per ordering code BE3.

Technical Context

This third-generation power MOSFET uses planar V-groove technology to achieve low on-resistance with ruggedized avalanche capability. Its dynamic dV/dt rating of 4.8 V/ns and 100 mJ single-pulse avalanche energy support reliable operation under inductive switching stress.

The device integrates a fast-recovery body diode (t_rr = 200–400 ns, Q_rr = 0.93–1.9 μC) and exhibits low gate input resistance (0.7–5.4 Ω), enabling simple drive requirements and ease of paralleling without external gate resistors in many configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	250 V - supports 200 V bus designs with 25 % voltage margin for transients
R_DS(on) @ V_GS = 10 V	1.1 Ω - enables <4.4 A continuous conduction with ≤2.7 W conduction loss at T_C = 25 °C
Q_g	14 nC - determines gate drive power requirement; compatible with standard 1-A peak drivers
I_D (continuous)	4.4 A @ T_C = 25 °C - defines maximum steady-state current with heatsink
E_AS	100 mJ - allows unclamped inductive switching up to 4.4 A without failure
t_rr	200–400 ns - limits reverse recovery losses in hard-switched topologies
P_D	50 W @ T_C = 25 °C - sets thermal design baseline for TO-220AB mounting

Pinout & Package

TO-220AB package: insulated tab, vertical lead orientation, 3-pin through-hole mount with 2.54 mm pitch; case-to-sink thermal resistance of 0.50 °C/W with greased flat surface.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current path from source to load	Connected to MOSFET die backside; electrically tied to metal tab-requires isolation when mounted to heatsink
Gate (G)	Control electrode for channel formation	High-impedance input; 14 nC total charge requires ~140 ns to fully switch with 100 mA driver
Source (S)	Reference node for gate drive and current return	Common connection point for load return path and gate drive ground; internal source inductance = 7.5 nH

Key Features

Feature	Design Value
Repetitive avalanche rated	Supports 4.4 A I_AR and 5.0 mJ E_AR under repetitive inductive turn-off, eliminating need for external snubbers in many flyback/boost stages
Dynamic dV/dt rating	4.8 V/ns immunity prevents false turn-on during high-speed voltage transients across drain-source
Fast switching	7 ns turn-on delay + 13 ns rise time enables >100 kHz operation with low switching loss
Low R_DS(on) × Q_g figure of merit	15.4 Ω·nC - balances conduction and switching loss for optimized efficiency in 20–100 kHz SMPS
RoHS-compliant & halogen-free	Meets JEDEC JS709A and IEC 61249-2-21; BE3 suffix confirms Pb-free and Br/Cl-free terminations

Applications

Switch-Mode Power Supplies	DC Motor Drives
Use Scenario: Primary-side switch in 30–60 W offline flyback converters with universal AC input. IC Role / Device Role / Timing Role: Main power switch controlling energy transfer via duty-cycle modulation; operates at 65–100 kHz. Use Value: 250 V V_DS and 100 mJ E_AS withstand reflected output voltage spikes and leakage inductance energy without clamping.	Use Scenario: H-bridge low-side switch for 24 V brushed DC motors in industrial actuators. IC Role / Device Role / Timing Role: Synchronous rectifier and PWM-controlled current path; commutated at 1–20 kHz. Use Value: 4.4 A continuous current and 1.1 Ω R_DS(on) limit conduction loss to <25 W at full load, reducing heatsink size.
LED Drivers	Power Inverters
Use Scenario: Constant-current buck controller for high-brightness LED strings in architectural lighting. IC Role / Device Role / Timing Role: High-side or low-side current-regulating switch; modulated at 1–5 kHz for dimming. Use Value: Fast 12 ns fall time minimizes switching loss during PWM dimming cycles, improving thermal stability.	Use Scenario: Half-bridge leg in 100–500 W pure-sine-wave inverters for solar micro-inverters. IC Role / Device Role / Timing Role: Bridge arm switch synchronized with complementary gate drive; operated at 20–50 kHz. Use Value: Body diode t_rr ≤ 400 ns and Q_rr ≤ 1.9 μC reduce shoot-through risk and reverse recovery loss during dead-time transitions.

Switch-Mode Power Supplies

DC Motor Drives

Use Scenario: Primary-side switch in 30–60 W offline flyback converters with universal AC input.

IC Role / Device Role / Timing Role: Main power switch controlling energy transfer via duty-cycle modulation; operates at 65–100 kHz.

Use Value: 250 V V_DS and 100 mJ E_AS withstand reflected output voltage spikes and leakage inductance energy without clamping.

Use Scenario: H-bridge low-side switch for 24 V brushed DC motors in industrial actuators.

IC Role / Device Role / Timing Role: Synchronous rectifier and PWM-controlled current path; commutated at 1–20 kHz.

Use Value: 4.4 A continuous current and 1.1 Ω R_DS(on) limit conduction loss to <25 W at full load, reducing heatsink size.

LED Drivers

Power Inverters

Use Scenario: Constant-current buck controller for high-brightness LED strings in architectural lighting.

IC Role / Device Role / Timing Role: High-side or low-side current-regulating switch; modulated at 1–5 kHz for dimming.

Use Value: Fast 12 ns fall time minimizes switching loss during PWM dimming cycles, improving thermal stability.

Use Scenario: Half-bridge leg in 100–500 W pure-sine-wave inverters for solar micro-inverters.

IC Role / Device Role / Timing Role: Bridge arm switch synchronized with complementary gate drive; operated at 20–50 kHz.

Use Value: Body diode t_rr ≤ 400 ns and Q_rr ≤ 1.9 μC reduce shoot-through risk and reverse recovery loss during dead-time transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP25NE20	200 V V_DS, 25 A I_D, 0.08 Ω R_DS(on), TO-220FP package	Higher current, lower voltage rating; higher thermal resistance (3.5 °C/W)	Select when higher current handling is required and bus voltage stays ≤180 V; verify layout for different pinout (G-D-S vs D-G-S)
IXTP12N25P	250 V V_DS, 12 A I_D, 0.28 Ω R_DS(on), TO-220AB package, no avalanche rating	Higher current and lower R_DS(on), but lacks repetitive avalanche specification	Prefer where conduction loss dominates and inductive energy is externally clamped; not suitable for unclamped inductive loads

Compared with STP25NE20 and IXTP12N25P, the IRF624PBF-BE3 offers balanced 250 V/4.4 A capability with verified repetitive avalanche performance and industry-standard TO-220AB pinout-making it optimal for cost-sensitive, thermally constrained 30–60 W power stages requiring robustness without overdesign.

Availability

IRF624PBF-BE3 is available at Aetrix Electronics and suitable for switch-mode power supplies, DC motor drives, LED drivers, and power inverters requiring stable component supply and long-term industrial availability.

Supply support for IRF624PBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and application-specific optimization.

The IRF624PBF-BE3 belongs to Vishay's third-generation power MOSFET family, engineered for commercial-industrial switching applications demanding high voltage tolerance, avalanche robustness, and thermal efficiency in TO-220AB packaging.

FAQ

What is the maximum continuous drain current for IRF624PBF-BE3 at 100 °C case temperature?

The IRF624PBF-BE3 supports 2.8 A continuous drain current at T_C = 100 °C, derated linearly from 4.4 A at 25 °C using the 0.40 W/°C derating factor. This reflects real thermal limits under sustained conduction-engineers must ensure heatsink design maintains case temperature ≤100 °C for reliable 2.8 A operation. The IRF624PBF-BE3 datasheet specifies this value in Absolute Maximum Ratings Table.

Does IRF624PBF-BE3 have a specified body diode reverse recovery time?

Yes, the IRF624PBF-BE3 body diode has a reverse recovery time (t_rr) of 200–400 ns at T_J = 25 °C, I_F = 4.4 A, and dI/dt = 100 A/μs. This parameter is critical for hard-switched topologies like synchronous buck or half-bridge inverters. The IRF624PBF-BE3 datasheet lists t_rr in the Drain-Source Body Diode Characteristics table on page 2.

Is IRF624PBF-BE3 pin-compatible with earlier IRF624 variants like IRF624PbF?

Yes, IRF624PBF-BE3 is mechanically and electrically pin-compatible with IRF624PbF and other TO-220AB-packaged IRF624 variants. Both share identical pinout (D-G-S), thermal footprint, and electrical specifications-the BE3 suffix only denotes halogen-free and Pb-free terminations. The IRF624PBF-BE3 can replace IRF624PbF without PCB changes.

What is the gate threshold voltage range for IRF624PBF-BE3?

The IRF624PBF-BE3 has a gate-source threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V at V_DS = V_GS and I_D = 250 μA. This ensures reliable turn-on with standard 5 V or 10 V logic-level gate drivers while maintaining noise immunity. The IRF624PBF-BE3 datasheet specifies V_GS(th) in the Static Electrical Characteristics table on page 2.

Can IRF624PBF-BE3 be used in avalanche mode for energy clamping?

Yes, the IRF624PBF-BE3 is explicitly rated for repetitive avalanche operation: 4.4 A I_AR and 5.0 mJ E_AR at T_J ≤ 150 °C. It also supports 100 mJ single-pulse avalanche energy. This makes the IRF624PBF-BE3 suitable for unclamped inductive switching in flyback, boost, and relay-driving circuits without external snubbers.

IRF624PBF-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 250 V

Current - Continuous Drain (Id) @ 25°C:: 4.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 1.1Ohm @ 2.6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 14 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 260 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 50W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRF624PBF-BE3 FAQ

1.How can I place an order for IRF624PBF-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF624PBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF624PBF-BE3 reliable?

The price and inventory of IRF624PBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF624PBF-BE3 is usually 5 days.

3.What payment methods are accepted for IRF624PBF-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF624PBF-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF624PBF-BE3?

IRF624PBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF624PBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF624PBF-BE3?

For technical support, including IRF624PBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF624PBF-BE3 requirements.

6.How does Aetrix verify that IRF624PBF-BE3 is sourced from the original manufacturer or authorized distributors?

All IRF624PBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF624PBF-BE3 meets industry standards.

7.What is the process for return or replacement of IRF624PBF-BE3?

All IRF624PBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRF624PBF-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF624PBF-BE3 part is unused and in its original packaging.

Return procedure for IRF624PBF-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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