Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF624S

Name: IRF624S
Brand: Vishay Siliconix
SKU: IRF624S
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRF624S

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF624S.pdf

Description:: MOSFET N-CH 250V 4.4A D2PAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:3,632

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRF624S from Vishay Siliconix is a 250 V, 4.4 A N-channel power MOSFET in D2PAK (TO-263) package, featuring 1.1 Ω R_DS(on) at V_GS = 10 V, 14 nC total gate charge, and repetitive avalanche rating up to 4.4 A - designed for high-voltage DC-DC converters, motor control stages, and industrial switching power supplies.

For engineers reviewing the IRF624S datasheet, IRF624S pinout, IRF624S application, or IRF624S equivalent, key selection considerations include its 250 V blocking capability, surface-mount D2PAK thermal performance (2.5 °C/W R_thJC), fast 7 ns turn-on delay, and body diode recovery time under 400 ns - critical for hard-switched flyback and half-bridge topologies.

Technical Context

The IRF624S employs a third-generation planar vertical DMOS structure optimized for ruggedness and switching efficiency. Its gate threshold voltage (2.0–4.0 V) enables standard 10 V logic-level drive, while dynamic dv/dt rating of 4.8 V/ns supports stable operation in noisy high-side configurations.

It integrates a monolithic body diode with 1.8 V forward drop at 4.4 A and 200–400 ns reverse recovery time, enabling self-commutated operation in synchronous rectifier and unclamped inductive load circuits without external freewheeling diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	250 V - supports primary-side switching in 200 V AC-input offline SMPS and 48 V industrial bus systems.
R_DS(on)	1.1 Ω @ V_GS = 10 V - limits conduction loss to ≤21 W at 4.4 A continuous drain current in PCB-mounted configuration.
Q_g	14 nC - determines gate drive power requirement (~1.4 mW per MHz at 10 V drive) for PWM frequencies up to 500 kHz.
E_AS	100 mJ single-pulse avalanche energy - enables reliable operation during inductive load turn-off transients without snubber networks.
t_rr	200–400 ns body diode reverse recovery - reduces switching loss and EMI in discontinuous conduction mode (DCM) flyback converters.
R_thJC	2.5 °C/W - allows 50 W dissipation at T_C = 25 °C, supporting high-power density designs with minimal heatsinking.

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for thermal conduction; 3-terminal configuration (G, D, S) compatible with IPC-7351B footprint code SOT227A.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	High-impedance MOSFET control terminal requiring ≤14 nC charge for full enhancement; connects to PWM driver IC output via low-inductance trace.
D	Drain	Main high-voltage power terminal; electrically connected to exposed copper pad on underside - must be soldered to large thermal plane for R_thJC optimization.
S	Source	Power return path and gate reference node; internal source inductance (7.5 nH) impacts high-di/dt switching stability and requires local bypass capacitance.

Key Features

Feature	Design Value
Repetitive avalanche rated	Supports 4.4 A I_AR and 5.0 mJ E_AR without derating - eliminates need for overvoltage clamping in solenoid and relay drivers.
Dynamic dv/dt immunity	Rated 4.8 V/ns - prevents false turn-on in high-speed half-bridge legs with fast-rising bus voltages.
Fast switching	7 ns t_d(on), 13 ns t_r, 20 ns t_d(off), 12 ns t_f - enables >300 kHz operation in LLC resonant converters with low dead-time requirements.
Low gate input resistance	0.7–5.4 Ω R_g - simplifies gate driver selection and minimizes RC delay in high-frequency gate loops.
Surface-mount packaging	D2PAK footprint provides 2× thermal performance vs. TO-220 in same PCB area - ideal for automated assembly and space-constrained industrial modules.

Applications

Industrial Motor Control	Offline SMPS Primary Switch
Use Scenario: Driving 24–48 V brushed DC motors in programmable logic controller (PLC) output modules with PWM frequency up to 20 kHz. IC Role / Device Role / Timing Role: High-side or low-side power switch handling bidirectional current up to 4.4 A with integrated body diode commutation. Use Value: Avalanche rating absorbs inductive kickback without external flyback diode; 1.1 Ω R_DS(on) limits I²R heating to <10 °C rise at full load.	Use Scenario: Primary-side switch in universal-input (85–265 V AC) 30 W flyback converter for industrial sensors and IoT gateways. IC Role / Device Role / Timing Role: Hard-switched power transistor operating at 65 kHz with 250 V V_DS margin above reflected output voltage. Use Value: 100 mJ E_AS withstands startup surges and line transients; 400 ns t_rr ensures clean zero-current switching transitions.
DC-DC Converter High-Side Switch	AC Solid-State Relay Driver
Use Scenario: High-side switch in 48 V–12 V synchronous buck converter for telecom power distribution units. IC Role / Device Role / Timing Role: Main switching element with bootstrap gate drive; body diode conducts during low-side conduction phase. Use Value: 1.8 V V_SD forward drop minimizes conduction loss during freewheeling; 7.8 nC Q_gd ensures crisp voltage transition during duty cycle changes.	Use Scenario: Output stage in opto-isolated AC solid-state relay controlling 120/240 V AC resistive loads up to 1 A RMS. IC Role / Device Role / Timing Role: Zero-crossing triggered power switch with integrated snubberless turn-off capability. Use Value: Repetitive avalanche rating handles AC line voltage reversals without failure; 150 °C T_J(max) supports sealed enclosure operation.

Industrial Motor Control

Offline SMPS Primary Switch

Use Scenario: Driving 24–48 V brushed DC motors in programmable logic controller (PLC) output modules with PWM frequency up to 20 kHz.

IC Role / Device Role / Timing Role: High-side or low-side power switch handling bidirectional current up to 4.4 A with integrated body diode commutation.

Use Value: Avalanche rating absorbs inductive kickback without external flyback diode; 1.1 Ω R_DS(on) limits I²R heating to <10 °C rise at full load.

Use Scenario: Primary-side switch in universal-input (85–265 V AC) 30 W flyback converter for industrial sensors and IoT gateways.

IC Role / Device Role / Timing Role: Hard-switched power transistor operating at 65 kHz with 250 V V_DS margin above reflected output voltage.

Use Value: 100 mJ E_AS withstands startup surges and line transients; 400 ns t_rr ensures clean zero-current switching transitions.

DC-DC Converter High-Side Switch

AC Solid-State Relay Driver

Use Scenario: High-side switch in 48 V–12 V synchronous buck converter for telecom power distribution units.

IC Role / Device Role / Timing Role: Main switching element with bootstrap gate drive; body diode conducts during low-side conduction phase.

Use Value: 1.8 V V_SD forward drop minimizes conduction loss during freewheeling; 7.8 nC Q_gd ensures crisp voltage transition during duty cycle changes.

Use Scenario: Output stage in opto-isolated AC solid-state relay controlling 120/240 V AC resistive loads up to 1 A RMS.

IC Role / Device Role / Timing Role: Zero-crossing triggered power switch with integrated snubberless turn-off capability.

Use Value: Repetitive avalanche rating handles AC line voltage reversals without failure; 150 °C T_J(max) supports sealed enclosure operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP2NK60Z	600 V V_DS, 1.8 Ω R_DS(on), 12 nC Q_g, TO-220 package	Higher voltage rating but higher on-resistance and through-hole mounting	Preferred where 600 V isolation is required and PCB space allows leaded package.
IXTP4N50D2	500 V V_DS, 2.5 Ω R_DS(on), 10 nC Q_g, TO-220FP package	Lower gate charge but significantly higher R_DS(on) and lower current rating (4 A)	Selected when lower drive power is prioritized over conduction loss in low-duty-cycle applications.

Compared with STP2NK60Z and IXTP4N50D2, the IRF624S delivers optimal balance of 250 V rating, 1.1 Ω on-resistance, and D2PAK thermal performance - making it preferred for compact, high-efficiency 48 V industrial power stages where surface-mount assembly and avalanche robustness are mandatory.

Availability

IRF624S is available at Aetrix Electronics and suitable for industrial motor control, offline SMPS, DC-DC converters, and AC solid-state relay designs requiring stable component supply, RoHS-compliant sourcing, and long-term production continuity.

Supply support for IRF624S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRF624S belongs to Vishay's third-generation power MOSFET family engineered for rugged switching in high-voltage, medium-current applications - emphasizing avalanche endurance, fast dv/dt immunity, and surface-mount thermal efficiency.

FAQ

What is the maximum continuous drain current for the IRF624S at 100 °C case temperature?

The IRF624S supports 2.8 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package under sustained power dissipation; actual usable current depends on PCB copper area, ambient temperature, and airflow. The IRF624S maintains safe operation within its SOA curve up to this limit when mounted on a 1" square FR-4 board.

Does the IRF624S have a built-in body diode, and what are its key parameters?

Yes, the IRF624S integrates a monolithic body diode with 1.8 V forward voltage at 4.4 A and 25 °C, 200–400 ns reverse recovery time, and 0.93–1.9 μC reverse recovery charge. This diode enables freewheeling in inductive loads and synchronous rectification in buck converters. The IRF624S body diode is rated for continuous 4.4 A and pulsed 14 A, matching the MOSFET's current capabilities.

Is the IRF624S RoHS-compliant, and what is its lead-free status?

The IRF624S ordering variant IRF624SPbF is lead-free and RoHS-compliant, as confirmed in the Vishay datasheet S20-0683-Rev. D. It uses matte tin plating and meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1). The IRF624S part number itself refers to the same RoHS-compliant device; "PbF" suffix explicitly denotes lead-free termination. No exemptions apply - full compliance with Directive 2011/65/EU is verified.

What is the gate threshold voltage range for the IRF624S, and how does it affect drive requirements?

The IRF624S has a gate threshold voltage (V_GS(th)) range of 2.0–4.0 V at I_D = 250 μA, allowing reliable turn-on with standard 5 V or 10 V logic-level drivers. Its 10 V-rated R_DS(on) ensures full enhancement without overdriving; gate leakage remains ≤±100 nA at ±20 V. The IRF624S does not require specialized gate drivers - compatibility with microcontroller GPIOs and dedicated MOSFET drivers (e.g., TC4420) is direct and robust.

How does the IRF624S perform in avalanche conditions, and what energy levels are rated?

The IRF624S is repetitively avalanche-rated with 5.0 mJ energy per pulse and 4.4 A peak current, and single-pulse rated for 100 mJ. These values are measured under standardized unclamped inductive test conditions (V_DD = 50 V, L = 8.3 mH, I_AS = 4.4 A). The IRF624S sustains repeated avalanche events without parameter shift or degradation, enabling snubberless design in relay drivers and solenoid controls where inductive energy must be absorbed internally.

IRF624S Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 250 V

Current - Continuous Drain (Id) @ 25°C:: 4.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.1Ohm @ 2.6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 14 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 260 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta), 50W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

IRF624S FAQ

1.How can I place an order for IRF624S through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF624S on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF624S reliable?

The price and inventory of IRF624S are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF624S is usually 5 days.

3.What payment methods are accepted for IRF624S?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF624S transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF624S?

IRF624S orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF624S order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF624S?

For technical support, including IRF624S datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF624S requirements.

6.How does Aetrix verify that IRF624S is sourced from the original manufacturer or authorized distributors?

All IRF624S products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF624S meets industry standards.

7.What is the process for return or replacement of IRF624S?

All IRF624S units undergo pre-shipment inspection (PSI). If there is an issue with IRF624S, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF624S part is unused and in its original packaging.

Return procedure for IRF624S:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …