Vishay Siliconix IRF624SPBF
- Part No.:
- IRF624SPBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRF624SPBF.pdf
- Description:
- MOSFET N-CH 250V 4.4A D2PAK
- Quantity:
- Payment:

- Shipping:

Inventory:969
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IRF624SPBF from Vishay Siliconix is a 250 V, 4.4 A N-channel surface-mount power MOSFET in D2PAK (TO-263) package, featuring 1.1 Ω RDS(on) at VGS = 10 V, 14 nC total gate charge, and repetitive avalanche rating-designed for high-voltage DC-DC converters, motor control stages, and industrial power switching where ruggedness and fast switching are critical.
For engineers reviewing the IRF624SPBF datasheet, IRF624SPBF pinout, IRF624SPBF application, or IRF624SPBF equivalent, key selection considerations include its 250 V drain-source breakdown voltage, 1.1 Ω on-resistance at 10 V gate drive, 4.4 A continuous drain current at TC = 25 °C, and D2PAK thermal performance enabling up to 50 W dissipation with heatsink mounting.
Technical Context
This device belongs to Vishay's third-generation power MOSFET family optimized for high-voltage switching with low conduction loss and robust avalanche capability. Its dynamic dv/dt rating of 4.8 V/ns and body diode reverse recovery time of 200–400 ns support reliable operation in inductive load circuits.
The IRF624SPBF uses planar silicon technology with HEX-4 die size in D2PAK, delivering lowest possible RDS(on) among surface-mount packages at this voltage class. Its gate threshold voltage range (2.0–4.0 V) ensures compatibility with standard 10 V logic-level drivers while maintaining noise immunity.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 250 V - Supports input rails up to 200 V DC in offline or industrial SMPS without derating. |
| RDS(on) @ VGS = 10 V | 1.1 Ω - Enables ≤5 W conduction loss at 4.4 A, suitable for thermally constrained PCB-mount designs. |
| Qg | 14 nC - Determines gate drive power requirement; compatible with low-current 10 V drivers (e.g., TC4427). |
| ID (continuous, TC = 25 °C) | 4.4 A - Sustains full-load current in compact 1" × 1" FR-4 PCB layouts with 3.1 W natural convection limit. |
| EAS | 100 mJ - Withstands unclamped inductive energy spikes in relay/motor driver fault conditions without failure. |
| TJ range | −55 to +150 °C - Qualified for extended industrial temperature operation including motor drive enclosures. |
| Body diode VSD | 1.8 V @ IS = 4.4 A - Limits freewheeling loss during synchronous rectification or flyback catch phases. |
Pinout & Package
D2PAK (TO-263) package: surface-mount power package with exposed drain pad for thermal conduction; 3-pin configuration (G, D, S); 9.65 mm × 10.67 mm footprint; 14.61 mm height; RoHS-compliant lead-free termination.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Gate (G) | Control terminal | Receives 10 V logic-level signal; 2.0–4.0 V threshold enables direct microcontroller interface with pull-up. |
| Drain (D) | High-side power output | Connected to exposed copper thermal pad; carries full load current and must be routed over large copper pour for heat dissipation. |
| Source (S) | Reference node / return path | Provides ground reference for gate drive; internal source inductance (7.5 nH) affects high-speed switching ringing. |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | Withstands 4.4 A repetitive avalanche current and 5.0 mJ energy per pulse-enables robust operation in inductive switching without external snubbers. |
| Dynamic dv/dt rating | 4.8 V/ns - Prevents false turn-on during high-slew-rate voltage transients in half-bridge or LLC resonant topologies. |
| Fast switching | 7.0 ns turn-on delay + 13 ns rise time - Reduces switching losses below 200 kHz, supporting efficient medium-frequency SMPS. |
| Low gate charge | 14 nC total with 2.7 nC gate-source component - Minimizes driver power consumption and simplifies gate resistor selection. |
| Surface-mount packaging | D2PAK footprint supports automated assembly and delivers 2.0 W power dissipation on standard FR-4 PCB without heatsink. |
Applications
| Industrial Motor Drive | Offline AC-DC Adapter |
|---|---|
|
Use Scenario: Half-bridge leg in 24–48 V brushed DC motor controller driving 3–5 A loads. IC Role / Device Role / Timing Role: High-side N-channel switch controlling motor direction and PWM speed regulation. Use Value: 250 V rating accommodates back-EMF spikes up to 180 V; 1.1 Ω RDS(on) limits I²R loss to <2.5 W at full load. |
Use Scenario: Primary-side switch in 30 W universal-input flyback converter. IC Role / Device Role / Timing Role: Main power switch operating at 65 kHz with 200 V reflected output voltage. Use Value: 100 mJ single-pulse avalanche energy absorbs transformer leakage inductance spikes without clamping circuit. |
| DC-DC Boost Converter | Power Factor Correction (PFC) |
|
Use Scenario: Boost switch in 12 V to 48 V telecom power supply delivering 2.5 A output. IC Role / Device Role / Timing Role: High-efficiency step-up switch with 100 kHz fixed-frequency operation. Use Value: 14 nC Qg enables low-loss gate drive using integrated controller (e.g., UCC28019), reducing driver BOM count. |
Use Scenario: Switching element in continuous-conduction-mode (CCM) PFC stage for 100–240 VAC input. IC Role / Device Role / Timing Role: Fast-switching, high-voltage switch handling 390 V DC bus with 50 kHz–100 kHz operation. Use Value: Body diode reverse recovery time (200–400 ns) and Qrr (0.93–1.9 μC) minimize commutation loss during zero-crossing transitions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP25NM50FP | 500 V VDS, 25 A ID, 0.22 Ω RDS(on), TO-220FP package | Higher voltage/current rating but through-hole; requires PCB cutout and heatsink mounting | Choose when higher power density and forced-air cooling are available; not drop-in for D2PAK layout. |
| SiHF624S-GE3 | Identical electrical specs; same D2PAK package; halogen-free, lead-free construction per JEDEC J-STD-020 | No functional difference; qualified for automotive-grade reflow profiles | Preferred for RoHS/halogen-free compliance programs; identical pinout and thermal behavior to IRF624SPBF. |
Compared with STP25NM50FP and SiHF624S-GE3, the IRF624SPBF offers optimal balance of 250 V rating, D2PAK surface-mount compatibility, and 1.1 Ω on-resistance for space-constrained industrial power stages-where SiHF624S-GE3 serves as a direct material-compliance alternative, while STP25NM50FP addresses higher-power through-hole needs.
Availability
IRF624SPBF is available at Aetrix Electronics and suitable for industrial motor drives, offline AC-DC adapters, and DC-DC boost converters requiring stable component supply across multi-year production cycles.
Supply support for IRF624SPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing applications.
The IRF624SPBF belongs to Vishay's third-generation surface-mount power MOSFET product line, engineered for high-voltage switching efficiency, rugged avalanche performance, and thermal reliability in compact PCB-mounted power systems.
FAQ
What is the maximum continuous drain current for IRF624SPBF at 100 °C case temperature?
The IRF624SPBF supports 2.8 A continuous drain current at TC = 100 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal resistance limitations in surface-mount configurations; designers must ensure adequate copper area and airflow to maintain case temperature within this limit during sustained operation. The IRF624SPBF datasheet confirms this value under standard test conditions with PCB mount.
Does IRF624SPBF have a built-in body diode, and what are its key parameters?
Yes, the IRF624SPBF integrates a monolithic body diode with 4.4 A continuous forward current rating, 1.8 V forward voltage at 4.4 A and 25 °C, and reverse recovery time of 200–400 ns. These values are measured under standardized conditions (TJ = 25 °C, IF = 4.4 A, di/dt = 100 A/μs) and directly impact performance in freewheeling and synchronous rectification applications. The IRF624SPBF body diode characteristics are fully documented in the "Drain-Source Body Diode Characteristics" section of its datasheet.
Can IRF624SPBF be used with 5 V logic-level gate drive?
No-the IRF624SPBF has a gate threshold voltage range of 2.0–4.0 V and is not a logic-level MOSFET; it requires 10 V gate drive to achieve its specified 1.1 Ω RDS(on). At 5 V, RDS(on) increases significantly (not characterized in datasheet), leading to excessive conduction loss. For 5 V drive, consider dedicated logic-level alternatives. The IRF624SPBF gate drive specification is explicitly defined for VGS = 10 V in all key parameter tables.
What is the thermal resistance from junction to ambient for IRF624SPBF in standard PCB mount?
The maximum junction-to-ambient thermal resistance (RthJA) for IRF624SPBF in PCB mount configuration is 40 °C/W, measured on a 1" × 1" FR-4 board per JEDEC standards. This value assumes no external heatsink and defines the worst-case temperature rise under 3.1 W power dissipation. The IRF624SPBF thermal performance is validated in the "Thermal Resistance Ratings" table of its official datasheet.
Is IRF624SPBF RoHS-compliant and halogen-free?
The IRF624SPBF is RoHS-compliant (lead-free) but not halogen-free; its ordering code "PbF" indicates lead-free termination only. For halogen-free compliance, use SiHF624S-GE3, which is functionally identical and explicitly certified halogen-free per JEDEC J-STD-020. The IRF624SPBF material status is confirmed in the "Ordering Information" and "Material categorization" sections of Vishay document 91030.
IRF624SPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 250 V
- Current - Continuous Drain (Id) @ 25°C:
- 4.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1.1Ohm @ 2.6A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 14 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 260 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.1W (Ta), 50W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
IRF624SPBF FAQ
1.How can I place an order for IRF624SPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF624SPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF624SPBF reliable?
The price and inventory of IRF624SPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF624SPBF is usually 5 days.
3.What payment methods are accepted for IRF624SPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF624SPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF624SPBF?
IRF624SPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF624SPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF624SPBF?
For technical support, including IRF624SPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF624SPBF requirements.
6.How does Aetrix verify that IRF624SPBF is sourced from the original manufacturer or authorized distributors?
All IRF624SPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF624SPBF meets industry standards.
7.What is the process for return or replacement of IRF624SPBF?
All IRF624SPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF624SPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF624SPBF part is unused and in its original packaging.
Return procedure for IRF624SPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRF624SPBF Tags

-
BSZ180P03NS3EGATMA1
Infineon Technologies

-
SIRA14DP-T1-GE3
Vishay Siliconix

-
AO4419
Alpha & Omega Semiconductor Inc.

-
SISA14BDN-T1-GE3
Vishay Siliconix

-
PSMN9R5-30YLC,115
Nexperia USA Inc.

-
BUK9Y21-40E,115
Nexperia USA Inc.

-
RTQ035N03HZGTR
Rohm Semiconductor

-
FDMS7680
onsemi

-
RQ3E180BNTB
Rohm Semiconductor

-
STL6N2VH5
STMicroelectronics

-
DMPH4029LFGQ-7
Diodes Incorporated

-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

