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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF630PBF-BE3

Name: IRF630PBF-BE3
Brand: Vishay Siliconix
SKU: IRF630PBF-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF630PBF-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRF630PBF-BE3.pdf

Description:: MOSFET N-CH 200V 9A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF630PBF-BE3 from Vishay Siliconix is a 200 V, 9.0 A N-channel power MOSFET in TO-220AB package, featuring 0.40 Ω R_DS(on) at V_GS = 10 V, 43 nC total gate charge, and repetitive avalanche rating-designed for hard-switched DC-DC converters, motor drive half-bridges, and AC mains-switching circuits.

For engineers reviewing the IRF630PBF-BE3 datasheet, IRF630PBF-BE3 pinout, IRF630PBF-BE3 application, or IRF630PBF-BE3 equivalent, key selection criteria include its 200 V V_DS, 9.0 A continuous drain current at T_C = 25 °C, 1.7 °C/W junction-to-case thermal resistance, and RoHS-compliant/halogen-free construction per ordering code BE3.

Technical Context

This third-generation planar vertical power MOSFET uses silicon process optimization to balance low conduction loss and fast switching. Its gate threshold voltage (2.0–4.0 V) enables standard 10 V logic-level drive, while dynamic dV/dt rating (5.0 V/ns) supports reliable operation in noisy inductive load environments.

The device integrates a robust body diode with 170–340 ns reverse recovery time and 1.1–2.2 nC Q_rr, supporting synchronous rectification and freewheeling in buck and flyback topologies without external snubbing in moderate-frequency (<100 kHz) applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200 V - Supports 170 VAC RMS input rectified to ~240 VDC bus with margin for surge and ringing.
R_DS(on)	0.40 Ω @ V_GS = 10 V - Delivers ≤ 3.24 W conduction loss at 9 A, enabling thermally constrained PCB layouts.
Q_g	43 nC - Requires ≥ 0.43 mC gate driver charge capacity per switching cycle at 10 kHz, influencing driver IC selection.
I_D (continuous)	9.0 A @ T_C = 25 °C - Sustains full-load current in heatsinked industrial power stages up to 74 W dissipation.
E_AS	250 mJ - Absorbs unclamped inductive energy during fault events without failure, enhancing system robustness.
T_J range	−55 to +150 °C - Qualified for extended-temperature industrial and automotive under-hood auxiliary systems.

Pinout & Package

IRF630PBF-BE3 is housed in a through-hole TO-220AB package with isolated tab (drain-connected), standardized for mechanical mounting and thermal interface to heatsinks via M3 screw (1.1 N·m torque).

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level signal; 7.0 nC Qgs ensures fast turn-on with minimal Miller effect.
D (Drain)	High-side power terminal	Internally connected to metal tab; requires electrical isolation when mounted to heatsink.
S (Source)	Power return / reference node	Serves as local ground reference for gate drive; 7.5 nH internal source inductance affects high-dI/dt switching.

Key Features

Feature	Design Value
Repetitive avalanche rated	9.0 A I_AR, 7.4 mJ E_AR - Enables reliable operation under transient overloads without derating.
Dynamic dV/dt rating	5.0 V/ns - Suppresses false turn-on in high-noise bridge-leg configurations with fast bus transients.
Low R_thJC	1.7 °C/W - Allows direct heatsink coupling for efficient thermal management in space-constrained enclosures.
RoHS + halogen-free	BE3 suffix - Meets IPC-1752A material declaration requirements for green electronics manufacturing.

Applications

Motor Drive Half-Bridge	AC-DC Power Supply Switch
Use Scenario: Driving brushed DC motors in industrial actuators with PWM frequencies up to 20 kHz. IC Role / Device Role / Timing Role: High-side or low-side switching element in H-bridge topology, handling bidirectional current up to 9 A. Use Value: 0.40 Ω R_DS(on) minimizes I²R losses during continuous conduction mode, extending battery life and reducing heatsink size.	Use Scenario: Primary-side switching transistor in offline 50–100 W flyback converters with universal AC input. IC Role / Device Role / Timing Role: Main power switch clamped by RCD snubber, operating at 65 kHz with 50% duty cycle. Use Value: 250 mJ single-pulse avalanche energy absorbs leakage inductance spikes, eliminating need for oversized snubbers.
DC-DC Converter Switch	Lighting Ballast Control
Use Scenario: Step-down (buck) converter in 12 V to 5 V/3.3 V point-of-load regulation for embedded controllers. IC Role / Device Role / Timing Role: Synchronous rectifier or high-side switch in non-isolated buck stage, switching at 300 kHz. Use Value: 43 nC Q_g enables efficient gate driving with low-power MOSFET drivers, reducing control-stage power consumption.	Use Scenario: Electronic ballast for fluorescent lamps in commercial lighting fixtures with dimming capability. IC Role / Device Role / Timing Role: Resonant inverter switch controlling lamp current via variable-frequency square-wave excitation. Use Value: 150 °C max junction temperature supports sealed fixture operation without forced air cooling.

Motor Drive Half-Bridge

AC-DC Power Supply Switch

Use Scenario: Driving brushed DC motors in industrial actuators with PWM frequencies up to 20 kHz.

IC Role / Device Role / Timing Role: High-side or low-side switching element in H-bridge topology, handling bidirectional current up to 9 A.

Use Value: 0.40 Ω R_DS(on) minimizes I²R losses during continuous conduction mode, extending battery life and reducing heatsink size.

Use Scenario: Primary-side switching transistor in offline 50–100 W flyback converters with universal AC input.

IC Role / Device Role / Timing Role: Main power switch clamped by RCD snubber, operating at 65 kHz with 50% duty cycle.

Use Value: 250 mJ single-pulse avalanche energy absorbs leakage inductance spikes, eliminating need for oversized snubbers.

DC-DC Converter Switch

Lighting Ballast Control

Use Scenario: Step-down (buck) converter in 12 V to 5 V/3.3 V point-of-load regulation for embedded controllers.

IC Role / Device Role / Timing Role: Synchronous rectifier or high-side switch in non-isolated buck stage, switching at 300 kHz.

Use Value: 43 nC Q_g enables efficient gate driving with low-power MOSFET drivers, reducing control-stage power consumption.

Use Scenario: Electronic ballast for fluorescent lamps in commercial lighting fixtures with dimming capability.

IC Role / Device Role / Timing Role: Resonant inverter switch controlling lamp current via variable-frequency square-wave excitation.

Use Value: 150 °C max junction temperature supports sealed fixture operation without forced air cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP20NM60FD	600 V V_DS, 0.32 Ω R_DS(on), TO-220FP package (full-pack, no isolated tab)	Higher voltage rating suits 400 VDC bus designs; lower R_DS(on) reduces conduction loss but increases gate charge (65 nC)	Select when higher blocking voltage and lower on-resistance outweigh gate drive complexity and thermal interface constraints.
FQP13N20L	200 V V_DS, 0.24 Ω R_DS(on), logic-level V_GS(th) (1–2.5 V), TO-220 package	Lower threshold enables direct microcontroller drive; reduced R_DS(on) improves efficiency but lacks documented avalanche rating	Prefer for low-voltage logic-driven systems where avalanche ruggedness is secondary to ease of drive and conduction loss.

Compared with STP20NM60FD and FQP13N20L, IRF630PBF-BE3 offers balanced 200 V/9 A capability with verified repetitive avalanche performance and industry-standard TO-220AB mechanical interface-making it optimal for cost-sensitive, thermally managed industrial switching where reliability under transient stress is critical.

Availability

IRF630PBF-BE3 is available at Aetrix Electronics and suitable for motor drives, AC-DC power supplies, and DC-DC converters requiring stable component supply across long-lifecycle industrial programs.

Supply support for IRF630PBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, thermal performance, and reliability.

The IRF630 series belongs to Vishay's third-generation planar power MOSFET product line, engineered for high-efficiency, hard-switched power conversion in commercial and industrial equipment where cost, thermal behavior, and transient robustness are jointly prioritized.

FAQ

What is the maximum continuous drain current for IRF630PBF-BE3 at 100 °C case temperature?

The IRF630PBF-BE3 supports 5.7 A continuous drain current at T_C = 100 °C, derived from its linear derating factor of 0.59 W/°C and 74 W P_D at 25 °C. This value reflects real thermal limits under sustained conduction, not pulsed conditions. Designers must verify heatsink performance to maintain T_C ≤ 100 °C when operating near this current level in IRF630PBF-BE3-based circuits.

Does IRF630PBF-BE3 have a fully isolated drain tab?

Yes, the IRF630PBF-BE3 uses a TO-220AB package with electrically isolated drain tab-meaning the metal tab is internally connected only to the drain terminal and not to the source or gate. This allows safe mounting to a common heatsink without additional insulation, provided the heatsink remains at drain potential or is properly isolated. The isolation is confirmed in Vishay's package drawings and thermal test setup diagrams for IRF630PBF-BE3.

What is the typical reverse recovery time of the body diode in IRF630PBF-BE3?

The body diode of IRF630PBF-BE3 has a typical reverse recovery time (t_rr) of 170 ns at T_J = 25 °C, I_F = 5.9 A, and dI/dt = 100 A/μs. Maximum t_rr is specified as 340 ns under identical conditions. This parameter directly impacts switching losses in synchronous rectification and freewheeling paths, and is measured using the test circuit in Figure 13 of the IRF630PBF-BE3 datasheet.

Is IRF630PBF-BE3 suitable for logic-level gate drive?

No, IRF630PBF-BE3 is not a logic-level MOSFET. Its gate threshold voltage (V_GS(th)) ranges from 2.0 V to 4.0 V, and it is characterized for full enhancement at V_GS = 10 V-requiring a dedicated gate driver or level-shifting circuit when driven from 3.3 V or 5 V microcontrollers. For direct logic-level operation, alternatives like FQP13N20L should be considered instead of IRF630PBF-BE3.

What does the "BE3" suffix indicate in IRF630PBF-BE3?

"BE3" denotes Vishay's lead (Pb)-free and halogen-free packaging standard: matte tin plating on leads, no brominated flame retardants, and compliance with JEDEC JS709B and IPC-1752A material declarations. It supersedes earlier "PbF" (lead-free only) variants and ensures full environmental compliance for export-controlled and green-certified electronics programs using IRF630PBF-BE3.

IRF630PBF-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 9A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 400mOhm @ 5.4A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 43 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 800 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 74W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRF630PBF-BE3 FAQ

1.How can I place an order for IRF630PBF-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF630PBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF630PBF-BE3 reliable?

The price and inventory of IRF630PBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF630PBF-BE3 is usually 5 days.

3.What payment methods are accepted for IRF630PBF-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF630PBF-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF630PBF-BE3?

IRF630PBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF630PBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF630PBF-BE3?

For technical support, including IRF630PBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF630PBF-BE3 requirements.

6.How does Aetrix verify that IRF630PBF-BE3 is sourced from the original manufacturer or authorized distributors?

All IRF630PBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF630PBF-BE3 meets industry standards.

7.What is the process for return or replacement of IRF630PBF-BE3?

All IRF630PBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRF630PBF-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF630PBF-BE3 part is unused and in its original packaging.

Return procedure for IRF630PBF-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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