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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF630S

Name: IRF630S
Brand: Vishay Siliconix
SKU: IRF630S
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF630S

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF630S.pdf

Description:: MOSFET N-CH 200V 9A D2PAK

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Product details

Overview

IRF630S from Vishay Siliconix is a surface-mount N-channel power MOSFET in D2PAK (TO-263) package, rated for 200 V drain-source voltage, 9.0 A continuous drain current at 25 °C, and 0.40 Ω R_DS(on) at V_GS = 10 V. It delivers fast switching, repetitive avalanche capability, and robust dv/dt immunity for high-current DC-DC converters and motor control circuits.

For engineers reviewing the IRF630S datasheet, IRF630S pinout, IRF630S application, or IRF630S equivalent, key selection criteria include its 74 W maximum power dissipation at T_C = 25 °C, 43 nC total gate charge, 250 mJ single-pulse avalanche energy, and suitability for PCB-mounted high-efficiency switch-mode power supplies requiring ruggedized conduction and controlled turn-off behavior.

Technical Context

This third-generation power MOSFET employs planar V-groove silicon technology optimized for low R_DS(on) and stable threshold voltage across temperature. Its dynamic performance is characterized by 9.4 ns turn-on delay, 28 ns rise time, and 39 ns turn-off delay under standard test conditions (V_DD = 100 V, I_D = 5.9 A, R_g = 12 Ω).

The device integrates an intrinsic body diode with 2.0 V forward voltage at 9.0 A and 170–340 ns reverse recovery time, enabling synchronous rectification and freewheeling operation. Thermal design is supported by 1.7 °C/W junction-to-case resistance and validated 40 °C/W junction-to-ambient rating on 1" FR-4 PCB mount.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200 V - Maximum blocking voltage before breakdown; supports 170 V DC bus designs with 15% margin.
R_DS(on) @ V_GS = 10 V	0.40 Ω - Conduction loss of 2.0 W at 7.1 A; enables thermally constrained PCB-mount applications.
I_D (continuous, T_C = 25 °C)	9.0 A - Sustained current capability with heatsink; derates linearly to 5.7 A at 100 °C case temperature.
Q_g	43 nC - Gate drive energy requirement determines driver strength needed for <100 ns switching transitions.
E_AS	250 mJ - Single-pulse unclamped inductive energy handling; allows safe operation in flyback and boost converters without snubbers.
T_J range	−55 to +150 °C - Extended thermal envelope supports industrial and automotive under-hood environments.
dv/dt rating	5.0 V/ns - Immunity to parasitic turn-on during high-speed switching; reduces need for gate clamping.

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-terminal configuration (G, D, S) in standard leaded layout per JEDEC TO-263AB outline.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Accepts 0–10 V logic-level drive; 7.0 nC gate-source charge enables low-power driver IC compatibility.
D (Drain)	High-side power terminal	Connected to internal die backside and thermal pad; requires full-surface copper pour for thermal management.
S (Source)	Reference and return path	Common node for gate drive reference and load current return; source inductance (7.5 nH) impacts switching overshoot.

Key Features

Feature	Design Value
Repetitive avalanche rated	Supports 9.0 A repetitive avalanche current and 7.4 mJ energy-enables reliable operation in inductive load switching without external protection.
Dynamic dv/dt immunity	5.0 V/ns rating prevents false triggering in noisy high-dV/dt environments such as motor drives and SMPS primary side.
Low R_DS(on) × Q_g figure-of-merit	17.2 Ω·nC - Balances conduction and switching losses for medium-frequency (≤100 kHz) power conversion stages.
Body diode with defined Q_rr	1.1–2.2 μC reverse recovery charge - Enables predictable freewheeling behavior in synchronous rectifier and half-bridge topologies.
Surface-mount packaging	D2PAK footprint supports automated assembly and high-power density layouts while maintaining 2.0 W typical thermal dissipation on PCB.

Applications

DC-DC Converters	Motor Drive Stages
Use Scenario: Step-down (buck) converter in industrial PLC power supply operating at 50–100 kHz. IC Role / Device Role / Timing Role: High-side main switch controlling energy transfer into output inductor. Use Value: 0.40 Ω R_DS(on) minimizes conduction loss at 7 A load; 43 nC Q_g enables efficient gate driving with TC4427-class drivers.	Use Scenario: Half-bridge leg in 24 V brushed DC motor controller for HVAC actuators. IC Role / Device Role / Timing Role: Low-side switching element commutating motor current with body diode freewheeling. Use Value: 250 mJ E_AS withstands inductive kickback during PWM dead-time; 2.0 V V_SD limits freewheeling loss.
Uninterruptible Power Supplies	LED Constant-Current Drivers
Use Scenario: Battery backup inverter stage delivering 120 V AC from 48 V DC bus. IC Role / Device Role / Timing Role: Output switching transistor in push-pull or full-bridge topology. Use Value: 200 V V_DS rating accommodates 170 V peak AC waveform plus safety margin; 150 °C T_J max supports sealed enclosure operation.	Use Scenario: Constant-current buck regulator for high-brightness LED arrays in street lighting. IC Role / Device Role / Timing Role: Series-pass switch regulating LED string current via PWM dimming. Use Value: Repetitive avalanche rating ensures reliability during LED open-circuit fault events; 9.0 A I_D supports multi-string parallel configurations.

DC-DC Converters

Motor Drive Stages

Use Scenario: Step-down (buck) converter in industrial PLC power supply operating at 50–100 kHz.

IC Role / Device Role / Timing Role: High-side main switch controlling energy transfer into output inductor.

Use Value: 0.40 Ω R_DS(on) minimizes conduction loss at 7 A load; 43 nC Q_g enables efficient gate driving with TC4427-class drivers.

Use Scenario: Half-bridge leg in 24 V brushed DC motor controller for HVAC actuators.

IC Role / Device Role / Timing Role: Low-side switching element commutating motor current with body diode freewheeling.

Use Value: 250 mJ E_AS withstands inductive kickback during PWM dead-time; 2.0 V V_SD limits freewheeling loss.

Uninterruptible Power Supplies

LED Constant-Current Drivers

Use Scenario: Battery backup inverter stage delivering 120 V AC from 48 V DC bus.

IC Role / Device Role / Timing Role: Output switching transistor in push-pull or full-bridge topology.

Use Value: 200 V V_DS rating accommodates 170 V peak AC waveform plus safety margin; 150 °C T_J max supports sealed enclosure operation.

Use Scenario: Constant-current buck regulator for high-brightness LED arrays in street lighting.

IC Role / Device Role / Timing Role: Series-pass switch regulating LED string current via PWM dimming.

Use Value: Repetitive avalanche rating ensures reliability during LED open-circuit fault events; 9.0 A I_D supports multi-string parallel configurations.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP20NM60FD	600 V V_DS, 0.32 Ω R_DS(on), 45 nC Q_g, TO-220 package	Higher voltage rating but larger footprint and higher thermal resistance; not surface-mount compatible	Choose when >200 V blocking is required and through-hole mounting is acceptable.
IXTP50N10P	100 V V_DS, 0.022 Ω R_DS(on), 72 nC Q_g, TO-220 package	Lower voltage, much lower on-resistance, higher gate charge; unsuitable for 200 V bus applications	Choose only for ≤100 V systems where ultra-low conduction loss outweighs voltage limitation.

Compared with STP20NM60FD and IXTP50N10P, the IRF630S provides optimal trade-off between 200 V capability, D2PAK surface-mount integration, and 0.40 Ω conduction loss-making it uniquely suited for space-constrained, medium-voltage industrial power stages where PCB thermal management is prioritized over ultimate R_DS(on).

Availability

IRF630S is available at Aetrix Electronics and suitable for DC-DC converters, motor drive stages, uninterruptible power supplies, and LED constant-current drivers requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRF630S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRF630S belongs to Vishay's third-generation power MOSFET family engineered for ruggedized switching in medium-voltage, medium-current applications-emphasizing avalanche robustness, surface-mount thermal performance, and consistent parametric stability across temperature.

FAQ

What is the maximum continuous drain current rating for the IRF630S at 100 °C case temperature?

The IRF630S supports 5.7 A continuous drain current at T_C = 100 °C, per its linear derating factor of 0.59 W/°C from the 74 W maximum power dissipation at 25 °C. This value is confirmed in the Absolute Maximum Ratings table of Vishay document 91032 and applies under steady-state thermal conditions with adequate heatsinking.

Does the IRF630S have a specified body diode reverse recovery time?

Yes, the IRF630S body diode reverse recovery time (t_rr) is specified as 170–340 ns at T_J = 25 °C, I_F = 5.9 A, and di/dt = 100 A/μs. This parameter is measured under standardized conditions and appears in the "Drain-Source Body Diode Characteristics" section of the datasheet, directly supporting design of freewheeling paths in hard-switched topologies.

Is the IRF630S RoHS-compliant and halogen-free?

The IRF630S is offered in both lead (Pb)-free and halogen-free versions (e.g., IRF630STRRPbF), as documented in the Ordering Information table of Vishay document 91032. Compliance status is explicitly stated per material categorization guidelines in Vishay document 99912, and the part meets EU RoHS Directive 2011/65/EU requirements.

What is the gate-source threshold voltage range for the IRF630S?

The IRF630S has a gate-source threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V at V_DS = V_GS and I_D = 250 μA, per the Static Specifications table. This ensures reliable turn-on with standard 5 V or 10 V logic-level gate drivers while maintaining noise immunity against spurious gate excitation.

Can the IRF630S be used in avalanche mode for circuit protection?

Yes, the IRF630S is explicitly rated for repetitive avalanche operation with I_AR = 9.0 A and E_AR = 7.4 mJ, and single-pulse avalanche energy of 250 mJ. These ratings are validated per test conditions in Figure 12 and Note b of the datasheet, confirming its suitability for inductive load switching without external clamping in properly designed circuits.

IRF630S Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 9A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 400mOhm @ 5.4A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 43 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 800 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3W (Ta), 74W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

IRF630S FAQ

1.How can I place an order for IRF630S through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF630S on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF630S reliable?

The price and inventory of IRF630S are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF630S is usually 5 days.

3.What payment methods are accepted for IRF630S?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF630S transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF630S?

IRF630S orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF630S order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF630S?

For technical support, including IRF630S datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF630S requirements.

6.How does Aetrix verify that IRF630S is sourced from the original manufacturer or authorized distributors?

All IRF630S products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF630S meets industry standards.

7.What is the process for return or replacement of IRF630S?

All IRF630S units undergo pre-shipment inspection (PSI). If there is an issue with IRF630S, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF630S part is unused and in its original packaging.

Return procedure for IRF630S:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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