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Vishay Siliconix IRF630STRL
- Part No.:
- IRF630STRL
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRF630STRL.pdf
- Description:
- MOSFET N-CH 200V 9A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:4,898
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Product details
Overview
IRF630STRL from Vishay Siliconix is a surface-mount N-channel power MOSFET in D2PAK (TO-263) package, rated for 200 V drain-source voltage, 9.0 A continuous drain current at TC = 25 °C, and 0.40 Ω RDS(on) at VGS = 10 V. It delivers fast switching, repetitive avalanche capability, and low gate charge (43 nC), making it suitable for DC-DC converters, motor control circuits, and industrial power supplies.
For engineers reviewing the IRF630STRL datasheet, IRF630STRL pinout, IRF630STRL application, or IRF630STRL equivalent, key selection considerations include its 200 V blocking rating, 74 W power dissipation at TC = 25 °C, dynamic dv/dt tolerance of 5.0 V/ns, body diode reverse recovery time (170–340 ns), and compatibility with standard gate drivers due to simple drive requirements.
Technical Context
This third-generation power MOSFET uses planar silicon technology optimized for ruggedness and cost-effective high-voltage switching. Its design integrates a low-inductance D2PAK package with internal source/drain inductances specified at 7.5 nH and 4.5 nH respectively, enabling stable high-di/dt operation up to 120 A/μs in unclamped inductive switching.
The device features a gate threshold voltage range of 2.0–4.0 V, zero-gate-voltage drain leakage ≤25 μA at 200 V, and is rated for repetitive avalanche energy of 7.4 mJ - confirming robustness under transient overvoltage conditions without external snubbers in properly designed circuits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 200 V - supports primary-side switching in offline SMPS up to 170 V AC input with margin. |
| RDS(on) @ VGS = 10 V | 0.40 Ω - limits conduction loss to ≤2.0 W at 7.07 A RMS in continuous conduction mode. |
| Qg | 43 nC - determines gate drive power requirement; compatible with common 1-A peak gate drivers. |
| ID (continuous, TC = 25 °C) | 9.0 A - enables use in 100–200 W power stages with adequate heatsinking. |
| EAS | 250 mJ - allows safe single-pulse inductive turn-off without clamping at IAS = 9.0 A. |
| TJ range | −55 to +150 °C - supports operation in industrial ambient environments without derating below −40 °C. |
| dv/dt rating | 5.0 V/ns - ensures immunity to parasitic turn-on during high-speed hard-switching transitions. |
Pinout & Package
D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-terminal configuration (G, D, S); lead (Pb)-free and halogen-free per RoHS Directive 2011/65/EU.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Gate (G) | Control electrode | Accepts 0–10 V logic-level gate drive; 7.0 nC gate-source charge enables fast turn-on with minimal Miller effect. |
| Drain (D) | High-side power output | Connected to exposed copper pad on underside; carries full load current and dissipates heat directly to PCB thermal plane. |
| Source (S) | Reference node / return path | Provides low-impedance return for load current and gate drive loop; internal 7.5 nH inductance affects diode recovery behavior. |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | 9.0 A IAR, 7.4 mJ EAR - eliminates need for external avalanche protection in flyback or boost converters. |
| Dynamic dv/dt immunity | 5.0 V/ns - prevents false triggering during high-slew-rate switching in noisy industrial environments. |
| Fast switching | 9.4 ns td(on), 28 ns tr, 39 ns td(off), 20 ns tf - reduces total switching losses below 100 kHz operation. |
| Low RDS(on) × Qg figure-of-merit | 17.2 Ω·nC - balances conduction and switching loss for medium-frequency power conversion. |
| Surface-mount packaging | D2PAK footprint - supports automated assembly and high-power density layouts with 2.0 W typical PCB-mount dissipation. |
Applications
| AC-DC Power Supply | Brushed DC Motor Drive |
|---|---|
|
Use Scenario: Primary-side switch in 65–150 W offline flyback converter with universal AC input (85–265 VAC). IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer via transformer; operates at 65–100 kHz with ZVS-assisted turn-on. Use Value: 200 V VDS rating provides 30% margin above reflected output voltage spikes; avalanche rating absorbs leakage inductance energy without snubber. |
Use Scenario: H-bridge half-bridge leg driving 24 V, 5 A brushed DC motor in industrial actuator. IC Role / Device Role / Timing Role: Low-side or high-side switching element; commutated at ≤20 kHz with PWM duty cycle modulation. Use Value: 0.40 Ω RDS(on) limits resistive loss to <1.0 W at full load; fast turn-off (59 ns combined td(off) + tf) minimizes shoot-through risk during dead-time transitions. |
| DC-DC Boost Converter | Inductive Load Switching |
|
Use Scenario: Boost switch in 12 V to 48 V telecom power module delivering 3 A output. IC Role / Device Role / Timing Role: Main energy-storage switch; operates in continuous conduction mode at 200 kHz with synchronous rectification. Use Value: 43 nC Qg enables efficient gate driving with low-power controller ICs; Coss = 240 pF reduces capacitive switching loss at high frequency. |
Use Scenario: Solenoid or relay driver in programmable logic controller (PLC) output stage handling 24 V, 2 A inductive loads. IC Role / Device Role / Timing Role: Single-ended load switch with integrated body diode providing freewheeling path during de-energization. Use Value: Body diode VSD = 2.0 V at 9.0 A ensures low forward drop during flyback; trr = 170–340 ns avoids cross-conduction in multi-device sequencing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP20NM60FD | 600 V VDS, 0.32 Ω RDS(on), 45 nC Qg, TO-220 package | Higher voltage rating but larger through-hole footprint; higher gate charge increases driver demand | Prefer when >300 V system clearance required; not drop-in due to package and pinout mismatch |
| IRFZ44NPBF | 55 V VDS, 0.028 Ω RDS(on), 67 nC Qg, TO-220 package | Lower voltage, much lower on-resistance, higher gate charge; unsuitable for 200 V bus applications | Select only for ≤60 V DC systems where ultra-low conduction loss outweighs voltage limitation |
Compared with STP20NM60FD and IRFZ44NPBF, the IRF630STRL offers optimal balance of 200 V rating, surface-mount D2PAK packaging, and moderate gate charge-making it uniquely suited for space-constrained industrial power stages where voltage margin and assembly automation are critical.
Availability
IRF630STRL is available at Aetrix Electronics and suitable for AC-DC power supplies, brushed DC motor drives, and DC-DC boost converters requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.
Supply support for IRF630STRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and application-specific optimization.
The IRF630STRL belongs to Vishay's third-generation power MOSFET family engineered for high-voltage switching efficiency and avalanche robustness in industrial and commercial power conversion systems.
FAQ
What is the maximum continuous drain current rating for IRF630STRL at 100 °C case temperature?
The IRF630STRL supports 5.7 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal resistance limitations of the D2PAK package and must be validated against actual PCB layout and heatsinking. The IRF630STRL maintains RDS(on) stability across this range, with normalized on-resistance rising to ~1.8× its 25 °C value at 150 °C junction temperature.
Does IRF630STRL have a built-in body diode, and what are its key parameters?
Yes, the IRF630STRL integrates a monolithic body diode with 9.0 A continuous forward current rating (IS), 2.0 V forward voltage (VSD) at 9.0 A and 25 °C, and reverse recovery time (trr) of 170–340 ns. These values are measured under standardized conditions (TJ = 25 °C, IF = 5.9 A, di/dt = 100 A/μs) and confirm suitability for freewheeling in inductive switching applications without external diodes.
Is IRF630STRL RoHS-compliant, and what does the 'PbF' suffix indicate?
Yes, IRF630STRL is RoHS-compliant and halogen-free. The 'PbF' suffix in IRF630STRLPbF explicitly denotes lead (Pb)-free terminations per EU Directive 2011/65/EU. Vishay documents this compliance in datasheet revision D (07-Sep-2020), confirming material categorization per document 99912 and absence of restricted substances above threshold limits.
What is the thermal resistance from junction to case (RthJC) for IRF630STRL, and how does it impact heatsink design?
The IRF630STRL has a maximum junction-to-case (drain) thermal resistance of 1.7 °C/W, measured from die to the exposed drain pad. This low value enables efficient heat transfer to external heatsinks or copper planes. When designing PCB thermal relief, the 1.7 °C/W figure - combined with the 74 W PD rating at TC = 25 °C - implies that maintaining TC ≤ 75 °C requires ≤43 °C temperature rise across the thermal interface, achievable with standard thermal vias and 1"² FR-4 copper area.
Can IRF630STRL be used in avalanche-mode operation, and what are the limits?
Yes, the IRF630STRL is explicitly rated for repetitive avalanche operation: 9.0 A repetitive avalanche current (IAR) and 7.4 mJ repetitive avalanche energy (EAR). These ratings assume pulse width limited by junction temperature (per Fig. 11) and are validated per test condition b in the datasheet (VDD = 50 V, L = 4.6 mH, Rg = 25 Ω). The IRF630STRL should not be operated beyond these limits without derating for temperature or duty cycle.
IRF630STRL Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 200 V
- Current - Continuous Drain (Id) @ 25°C:
- 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 400mOhm @ 5.4A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 43 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 800 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3W (Ta), 74W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
IRF630STRL FAQ
1.How can I place an order for IRF630STRL through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF630STRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF630STRL reliable?
The price and inventory of IRF630STRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF630STRL is usually 5 days.
3.What payment methods are accepted for IRF630STRL?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF630STRL transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF630STRL?
IRF630STRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF630STRL order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF630STRL?
For technical support, including IRF630STRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF630STRL requirements.
6.How does Aetrix verify that IRF630STRL is sourced from the original manufacturer or authorized distributors?
All IRF630STRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF630STRL meets industry standards.
7.What is the process for return or replacement of IRF630STRL?
All IRF630STRL units undergo pre-shipment inspection (PSI). If there is an issue with IRF630STRL, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF630STRL part is unused and in its original packaging.
Return procedure for IRF630STRL:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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