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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF630STRLPBF

Name: IRF630STRLPBF
Brand: Vishay Siliconix
SKU: IRF630STRLPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF630STRLPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF630STRLPBF.pdf

Description:: MOSFET N-CH 200V 9A D2PAK

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Product details

Overview

IRF630STRLPBF from Vishay Siliconix is a surface-mount N-channel power MOSFET in D2PAK (TO-263) package, rated for 200 V drain-source voltage, 9.0 A continuous drain current at 25 °C, and 0.40 Ω R_DS(on) at V_GS = 10 V. It supports fast switching, repetitive avalanche operation, and is used in DC-DC converters, motor drives, and AC/DC power supplies.

For engineers reviewing the IRF630STRLPBF datasheet, IRF630STRLPBF pinout, IRF630STRLPBF application, or IRF630STRLPBF equivalent, key selection criteria include its 200 V blocking capability, 43 nC total gate charge, 74 W maximum power dissipation at T_C = 25 °C, and suitability for high-current surface-mount power switching with ruggedized avalanche rating.

Technical Context

This third-generation power MOSFET employs planar silicon technology optimized for low conduction loss and robust unclamped inductive switching. Its dynamic dv/dt rating of 5.0 V/ns and 250 mJ single-pulse avalanche energy support reliable operation under transient overvoltage and inductive load conditions.

The device features a 7.0 nC gate-source charge and 23 nC gate-drain charge, enabling efficient gate drive with standard logic-level drivers. Its internal source inductance (7.5 nH) and drain inductance (4.5 nH) are characterized for accurate switching waveform prediction in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200 V - Supports primary-side switching in offline SMPS up to 170 VAC mains with margin.
R_DS(on) @ V_GS = 10 V	0.40 Ω - Delivers ≤ 2.0 W conduction loss at 7.07 A RMS, suitable for medium-power converters.
I_D Continuous @ T_C = 25 °C	9.0 A - Enables use in 100–200 W power stages without forced cooling on standard PCBs.
Q_g Total Gate Charge	43 nC - Requires ~0.43 mC per million cycles at 100 kHz; dictates gate driver current capability.
E_AS Single-Pulse Avalanche Energy	250 mJ - Withstands unclamped inductive turn-off events in relay drivers or solenoid controls.
T_J Operating Range	−55 to +150 °C - Qualified for industrial and automotive under-hood auxiliary power applications.
R_thJC	1.7 °C/W - Enables thermal design with heatsink interface; junction-to-case path dominates thermal management.

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration (G, D, S), lead (Pb)-free and halogen-free construction.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level drive; 7.0 nC Q_gs enables fast turn-on with low gate resistance.
D (Drain)	High-side power terminal	Exposed metal tab - must be electrically connected to PCB ground plane or heatsink for thermal and EMI control.
S (Source)	Power return and reference node	Common return for gate drive loop; internal 7.5 nH source inductance affects switching speed and ringing.

Key Features

Feature	Design Value
Repetitive avalanche rated	9.0 A I_AR, 7.4 mJ E_AR - Enables reliable operation in circuits with unavoidable inductive energy recovery.
Dynamic dv/dt immunity	5.0 V/ns - Reduces risk of false turn-on during high-speed switching in noisy environments.
Fast switching performance	9.4 ns t_d(on), 28 ns t_r, 39 ns t_d(off), 20 ns t_f - Supports >200 kHz operation with minimized switching losses.
Low R_DS(on) × Q_g figure-of-merit	17.2 Ω·nC - Balances conduction and switching loss for medium-frequency power conversion.
Surface-mount packaging	D2PAK footprint - Compatible with automated assembly; 2.0 W power dissipation on FR-4 PCB without heatsink.

Applications

DC-DC Buck Converter	Brushed DC Motor Driver
Use Scenario: Step-down regulation from 24–48 V input to 5–12 V output in industrial PLC modules. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 100–300 kHz with 50% duty cycle. Use Value: 0.40 Ω R_DS(on) limits conduction loss to <1.5 W at 6 A load; 43 nC Q_g allows use with low-cost gate drivers.	Use Scenario: H-bridge half-bridge leg controlling 12–24 V brushed motors in HVAC actuators. IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional current up to 9 A peak. Use Value: Repetitive avalanche rating protects against back-EMF spikes during motor commutation; 150 °C T_J rating ensures reliability in enclosed enclosures.
AC/DC Flyback Power Supply	Inductive Load Switch (Relay/Solenoid)
Use Scenario: Primary-side switch in 30–60 W offline flyback adapters for medical and test equipment. IC Role / Device Role / Timing Role: Self-oscillating or PWM-controlled main power switch with 200 V breakdown margin. Use Value: 200 V V_DS accommodates reflected output voltage plus leakage spike; 250 mJ E_AS absorbs clamp circuit transients.	Use Scenario: Solid-state replacement for electromechanical relays driving 24 V solenoids in fluid control valves. IC Role / Device Role / Timing Role: Unclamped inductive turn-off switch managing stored energy in coil windings. Use Value: 250 mJ single-pulse avalanche energy safely dissipates inductive kickback without external snubber.

DC-DC Buck Converter

Brushed DC Motor Driver

Use Scenario: Step-down regulation from 24–48 V input to 5–12 V output in industrial PLC modules.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 100–300 kHz with 50% duty cycle.

Use Value: 0.40 Ω R_DS(on) limits conduction loss to <1.5 W at 6 A load; 43 nC Q_g allows use with low-cost gate drivers.

Use Scenario: H-bridge half-bridge leg controlling 12–24 V brushed motors in HVAC actuators.

IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional current up to 9 A peak.

Use Value: Repetitive avalanche rating protects against back-EMF spikes during motor commutation; 150 °C T_J rating ensures reliability in enclosed enclosures.

AC/DC Flyback Power Supply

Inductive Load Switch (Relay/Solenoid)

Use Scenario: Primary-side switch in 30–60 W offline flyback adapters for medical and test equipment.

IC Role / Device Role / Timing Role: Self-oscillating or PWM-controlled main power switch with 200 V breakdown margin.

Use Value: 200 V V_DS accommodates reflected output voltage plus leakage spike; 250 mJ E_AS absorbs clamp circuit transients.

Use Scenario: Solid-state replacement for electromechanical relays driving 24 V solenoids in fluid control valves.

IC Role / Device Role / Timing Role: Unclamped inductive turn-off switch managing stored energy in coil windings.

Use Value: 250 mJ single-pulse avalanche energy safely dissipates inductive kickback without external snubber.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP20NM20	200 V, 20 A, R_DS(on) = 0.20 Ω, Q_g = 35 nC, TO-220 package	Higher current rating but through-hole mounting; lower R_DS(on) improves conduction efficiency at high load.	Preferred where board space allows through-hole and higher continuous current (>12 A) is required.
IXTP12N20P	200 V, 12 A, R_DS(on) = 0.28 Ω, Q_g = 24 nC, TO-220 package	Lower gate charge and on-resistance, but lacks repetitive avalanche rating and uses different package.	Selected when faster switching and lower drive loss are prioritized over ruggedness in well-clamped circuits.

Compared with STP20NM20 and IXTP12N20P, the IRF630STRLPBF offers surface-mount compatibility and verified repetitive avalanche capability-critical for cost-sensitive, space-constrained industrial power stages where inductive stress is uncontrolled.

Availability

IRF630STRLPBF is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, and AC/DC power supplies requiring stable component supply, RoHS-compliant sourcing, and tape-and-reel delivery for SMT production.

Supply support for IRF630STRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, efficiency, and manufacturability.

The IRF630STRLPBF belongs to Vishay's third-generation power MOSFET family, designed specifically for high-reliability industrial and commercial power conversion where surface-mount scalability and avalanche robustness are essential.

FAQ

What is the maximum continuous drain current for IRF630STRLPBF at 100 °C case temperature?

The IRF630STRLPBF supports 5.7 A continuous drain current at T_C = 100 °C, per its absolute maximum ratings table. This derating reflects thermal limitations of the D2PAK package; designers must ensure adequate PCB copper area or heatsinking to maintain safe junction temperature below 150 °C under sustained load. The IRF630STRLPBF's 0.59 W/°C linear derating factor confirms this relationship.

Does IRF630STRLPBF have a built-in body diode, and what are its key parameters?

Yes, the IRF630STRLPBF integrates a parasitic body diode inherent to its vertical N-channel MOSFET structure. Key diode specs include 9.0 A continuous source-drain current, 2.0 V forward voltage at 9.0 A and 25 °C, and 170–340 ns reverse recovery time (t_rr) with 1.1–2.2 μC Q_rr. These values are measured under specified test conditions (T_J = 25 °C, I_F = 5.9 A, di/dt = 100 A/μs) and impact performance in synchronous rectification or freewheeling paths.

Is IRF630STRLPBF suitable for logic-level gate drive?

No, the IRF630STRLPBF is not a logic-level MOSFET. Its gate threshold voltage (V_GS(th)) ranges from 2.0 V to 4.0 V, and it requires 10 V gate drive to achieve rated R_DS(on) of 0.40 Ω. Driving it with 3.3 V or 5 V logic will result in significantly higher on-resistance and excessive conduction loss. The IRF630STRLPBF must be paired with a dedicated gate driver or level-shifting circuit for full enhancement.

What is the thermal resistance from junction to ambient for IRF630STRLPBF in standard PCB mount?

For IRF630STRLPBF mounted on a 1" square FR-4 PCB, the maximum junction-to-ambient thermal resistance (R_thJA) is 40 °C/W. This value assumes standard layout per Vishay's recommended pads and no external heatsink. When using the device in high-power applications, designers should verify actual board layout thermal performance, as R_thJA can vary significantly with copper area, layer count, and airflow. The IRF630STRLPBF's R_thJC of 1.7 °C/W provides a more stable basis for heatsink-based thermal design.

Can IRF630STRLPBF replace IRF630NPbF in existing designs?

Yes, IRF630STRLPBF is a direct drop-in replacement for IRF630NPbF in terms of electrical specifications, pinout, and D2PAK package dimensions. Both share identical V_DS, R_DS(on), Q_g, and avalanche ratings. The IRF630STRLPBF adds lead (Pb)-free and halogen-free compliance per JEDEC standards, making it suitable for RoHS-compliant manufacturing without layout or thermal redesign. Always verify solder profile compatibility due to differing plating systems.

IRF630STRLPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 9A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 400mOhm @ 5.4A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 43 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 800 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3W (Ta), 74W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

IRF630STRLPBF FAQ

1.How can I place an order for IRF630STRLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF630STRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF630STRLPBF reliable?

The price and inventory of IRF630STRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF630STRLPBF is usually 5 days.

3.What payment methods are accepted for IRF630STRLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF630STRLPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF630STRLPBF?

IRF630STRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF630STRLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF630STRLPBF?

For technical support, including IRF630STRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF630STRLPBF requirements.

6.How does Aetrix verify that IRF630STRLPBF is sourced from the original manufacturer or authorized distributors?

All IRF630STRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF630STRLPBF meets industry standards.

7.What is the process for return or replacement of IRF630STRLPBF?

All IRF630STRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF630STRLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF630STRLPBF part is unused and in its original packaging.

Return procedure for IRF630STRLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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