Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay Siliconix IRF630STRRPBF

Part No.:
IRF630STRRPBF
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixIRF630STRRPBF.pdf
Description:
MOSFET N-CH 200V 9A D2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:557

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IRF630STRRPBF from Vishay Siliconix is a surface-mount N-channel power MOSFET rated for 200 V drain-source voltage, 9.0 A continuous drain current at TC = 25 °C, and 0.40 Ω RDS(on) at VGS = 10 V - used as a main switching device in offline SMPS, DC-DC converters, and motor drive half-bridges.

For engineers reviewing the IRF630STRRPBF datasheet, IRF630STRRPBF pinout, IRF630STRRPBF application, or IRF630STRRPBF equivalent, key selection criteria include avalanche ruggedness (250 mJ single-pulse EAS), fast switching (tr = 28 ns), low gate charge (Qg = 43 nC), and D2PAK thermal performance (RthJC = 1.7 °C/W).

Technical Context

This third-generation power MOSFET employs planar V-groove silicon technology optimized for high-voltage switching with controlled dv/dt immunity and robust unclamped inductive switching capability. Its design supports repetitive avalanche operation up to IAR = 9.0 A and EAR = 7.4 mJ under defined pulse conditions.

The device integrates a low-loss body diode (VSD = 2.0 V at IS = 9.0 A, trr = 170–340 ns) and features tightly specified gate parameters: VGS(th) = 2.0–4.0 V, Ciss = 800 pF, and Rg = 0.6–3.3 Ω - enabling simple gate driving and stable paralleling in high-current designs.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 200 V - supports 170 VAC mains-derived bus voltages with 30 V margin for transients.
RDS(on) @ VGS = 10 V 0.40 Ω - limits conduction loss to ≤ 2.0 W at 7.07 A RMS in continuous conduction mode.
Qg 43 nC - determines gate driver power requirement (~430 µW per MHz of switching frequency).
ID (continuous, TC = 25 °C) 9.0 A - defines maximum steady-state current with heatsink; derates linearly to 5.7 A at 100 °C case.
EAS 250 mJ - enables reliable operation in hard-switched flyback or forward converters without snubbers.
tr / tf 28 ns / 20 ns - supports >500 kHz switching in resonant topologies with minimal overlap loss.
RthJC 1.7 °C/W - allows 74 W dissipation with ≤127 °C junction rise above 25 °C case temperature.

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for thermal conduction and mechanical anchoring; 3-pin configuration (G-D-S) with G and S on leadframe, D on backside thermal pad.

Pin/Terminal Circuit Role Design Meaning
G (Gate) Control terminal Receives 10 V logic-level signal; threshold range 2.0–4.0 V ensures TTL/CMOS compatibility.
D (Drain) High-side power output Connected to PCB thermal pad; carries full load current and withstands 200 V transient spikes.
S (Source) Power return reference Provides low-inductance source path; internal LS = 7.5 nH impacts diode recovery behavior.

Key Features

Feature Design Value
Repetitive avalanche rated Enables reliable operation in inductive load switching without external clamping circuits.
Dynamic dv/dt rating 5.0 V/ns immunity prevents false turn-on during high-slew-rate voltage transients.
Low RDS(on) × Qg figure-of-merit 17.2 Ω·nC - balances conduction and switching losses for medium-frequency SMPS efficiency.
Fast body diode recovery trr = 170–340 ns with Qrr = 1.1–2.2 µC - reduces cross-conduction loss in synchronous rectification.
Surface-mount D2PAK package Supports automated assembly and delivers 2.0 W power dissipation on standard FR-4 PCBs.

Applications

Offline AC-DC Adapters Industrial DC-DC Converters

Use Scenario: 65 W universal-input flyback converter for industrial control power supplies.

IC Role / Device Role / Timing Role: Primary-side switching transistor operating at 65 kHz with ZVS-assisted turn-on.

Use Value: 200 V rating accommodates 375 V DC bus with margin; 0.40 Ω RDS(on) keeps conduction loss below 1.5 W at full load.

Use Scenario: 48 V input, 12 V output half-bridge DC-DC module for PLC I/O power rails.

IC Role / Device Role / Timing Role: High-side switch in 200 kHz fixed-frequency phase-shifted topology.

Use Value: 43 nC Qg enables efficient gate drive with low-power IC drivers; avalanche rating handles transformer leakage energy.

Motor Drive Half-Bridges LED Driver Switching Stages

Use Scenario: 24 V brushed DC motor H-bridge for factory automation actuators.

IC Role / Device Role / Timing Role: Low-side switching element with PWM duty cycle up to 95 %.

Use Value: 9.0 A continuous rating supports 7 A motor stall current; 7.5 nH LS minimizes shoot-through risk during dead-time transitions.

Use Scenario: Constant-current buck LED driver for high-bay lighting (100 W, 350 mA output).

IC Role / Device Role / Timing Role: Main switching FET in 300 kHz current-mode controller loop.

Use Value: 250 mJ EAS absorbs inductor energy during overcurrent shutdown; fast tf = 20 ns reduces switching loss at high dimming frequencies.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STP20NM50FP 500 V VDS, 20 A ID, RDS(on) = 0.27 Ω - higher voltage rating but larger die and Qg = 65 nC. Better suited for 400 V bus systems; slower switching increases loss above 200 kHz. Select when higher voltage margin or higher current headroom is required; verify gate drive strength.
IXTP12N20P 200 V VDS, 12 A ID, RDS(on) = 0.22 Ω, Qg = 24 nC - lower RDS(on) and faster switching, but TO-220 package. Requires through-hole mounting and larger heatsink; not surface-mount compatible. Choose for improved efficiency in space-tolerant designs where D2PAK footprint is not mandatory.

Compared with STP20NM50FP and IXTP12N20P, the IRF630STRRPBF offers optimal balance of surface-mount integration, 200 V rating, and proven avalanche ruggedness in compact D2PAK - making it preferred for cost-sensitive, medium-power industrial SMPS where layout area and thermal management are constrained.

Availability

IRF630STRRPBF is available at Aetrix Electronics and suitable for offline AC-DC adapters, industrial DC-DC converters, and motor drive half-bridges requiring stable component supply and long-term manufacturing continuity.

Supply support for IRF630STRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability and ruggedized design.

The IRF630STRRPBF belongs to Vishay's third-generation high-voltage power MOSFET family, engineered for robust switching in industrial power conversion, motor control, and lighting applications where avalanche tolerance and thermal stability are critical.

FAQ

What is the maximum junction temperature for IRF630STRRPBF?

The IRF630STRRPBF has an operating junction temperature range of –55 °C to +150 °C. Absolute maximum rating is +150 °C; sustained operation above 135 °C requires derating of power dissipation per the linear derating factor of 0.59 W/°C. Thermal design must ensure TJ remains within this limit under worst-case ambient and load conditions. The IRF630STRRPBF datasheet specifies RthJC = 1.7 °C/W for thermal modeling.

Is IRF630STRRPBF RoHS-compliant and halogen-free?

Yes, IRF630STRRPBF is lead (Pb)-free and halogen-free, meeting RoHS Directive 2011/65/EU and Vishay's material compliance standards per document 99912. The "-GE3" suffix in related part numbers (e.g., SiHF630STRR-GE3) explicitly denotes this compliance; IRF630STRRPBF follows the same material specification and packaging process.

Does IRF630STRRPBF support parallel operation?

Yes, IRF630STRRPBF supports parallel operation due to its positive temperature coefficient of RDS(on) and low gate input resistance (0.6–3.3 Ω), which promote current sharing across multiple devices. Layout symmetry, matched gate drive paths, and Kelvin source connections are recommended. The IRF630STRRPBF datasheet cites "ease of paralleling" as a key feature.

What is the typical gate threshold voltage for IRF630STRRPBF?

The gate-source threshold voltage (VGS(th)) for IRF630STRRPBF is specified from 2.0 V to 4.0 V at ID = 250 µA and TJ = 25 °C. This range ensures reliable turn-on with standard 5 V or 10 V logic-level gate drivers while maintaining noise immunity. The IRF630STRRPBF exhibits stable VGS(th) drift over temperature, supporting consistent switching behavior across –55 °C to +150 °C.

Can IRF630STRRPBF replace IRF630NPbF in existing designs?

IRF630STRRPBF is not a direct drop-in replacement for IRF630NPbF due to differing packages: IRF630NPbF uses TO-220AB, while IRF630STRRPBF uses D2PAK (TO-263). Although both share identical electrical specifications (VDS = 200 V, RDS(on) = 0.40 Ω, Qg = 43 nC), the D2PAK requires revised PCB layout, thermal pad design, and reflow profile. The IRF630STRRPBF offers superior thermal resistance (RthJC = 1.7 °C/W vs. ~2.5 °C/W for TO-220), but mechanical compatibility is not assured.

IRF630STRRPBF Specifications

Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
-
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
200 V
Current - Continuous Drain (Id) @ 25°C:
9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
400mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
43 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
800 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
3W (Ta), 74W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-263 (D2PAK)

IRF630STRRPBF FAQ

1.How can I place an order for IRF630STRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF630STRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF630STRRPBF reliable?

The price and inventory of IRF630STRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF630STRRPBF is usually 5 days.

3.What payment methods are accepted for IRF630STRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF630STRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF630STRRPBF?

IRF630STRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF630STRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF630STRRPBF?

For technical support, including IRF630STRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF630STRRPBF requirements.

6.How does Aetrix verify that IRF630STRRPBF is sourced from the original manufacturer or authorized distributors?

All IRF630STRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF630STRRPBF meets industry standards.

7.What is the process for return or replacement of IRF630STRRPBF?

All IRF630STRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF630STRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF630STRRPBF part is unused and in its original packaging.

Return procedure for IRF630STRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IRF630STRRPBF Tags

  • IRF630STRRPBF
  • IRF630STRRPBF PDF
  • IRF630STRRPBF Datasheet
  • IRF630STRRPBF Specifications
  • IRF630STRRPBF Images
  • Vishay Siliconix
  • Vishay Siliconix IRF630STRRPBF
  • Buy IRF630STRRPBF
  • IRF630STRRPBF Price
  • IRF630STRRPBF Distributor
  • IRF630STRRPBF Supplier
  • IRF630STRRPBF Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER