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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF634STRLPBF

Name: IRF634STRLPBF
Brand: Vishay Siliconix
SKU: IRF634STRLPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF634STRLPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF634STRLPBF.pdf

Description:: MOSFET N-CHANNEL 250V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF634STRLPBF from Vishay Siliconix is a surface-mount N-channel power MOSFET rated for 250 V drain-source voltage, 8.1 A continuous drain current at T_C = 25 °C, and 0.45 Ω R_DS(on) at V_GS = 10 V. It features repetitive avalanche capability (E_AS = 300 mJ), fast switching (t_r = 21 ns, t_f = 19 ns), and D2PAK (TO-263) packaging optimized for high-current DC-DC converters and motor control stages.

For engineers reviewing the IRF634STRLPBF datasheet, IRF634STRLPBF pinout, IRF634STRLPBF application, or IRF634STRLPBF equivalent, key selection criteria include its 250 V blocking rating, 0.45 Ω on-resistance at 10 V gate drive, 41 nC total gate charge, avalanche ruggedness, and suitability for industrial power supplies and uninterruptible power systems requiring reliable high-voltage switching.

Technical Context

This third-generation power MOSFET uses planar V-groove silicon technology to achieve low R_DS(on) while maintaining robust dv/dt immunity (4.8 V/ns) and unclamped inductive switching capability. Its gate threshold voltage range (2.0–4.0 V) ensures compatibility with standard 10 V logic-level drivers and supports stable turn-on under wide temperature variation.

The device integrates a fast-recovery body diode (t_rr = 220–440 ns, Q_rr = 1.2–2.4 µC) and exhibits low internal inductance (L_D = 4.5 nH, L_S = 7.5 nH), enabling clean switching waveforms in hard-switched topologies. Thermal resistance from junction-to-case is 1.7 °C/W, supporting 74 W dissipation when mounted on heatsink.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	250 V - Supports primary-side switching in offline SMPS up to 230 VAC mains with margin
R_DS(on) @ V_GS = 10 V	0.45 Ω - Enables <5 W conduction loss at 10 A in 12 V load switch applications
I_D Continuous @ T_C = 25 °C	8.1 A - Sustains full-rated current with minimal heatsinking in PCB-mounted configurations
Q_g	41 nC - Determines gate driver power requirement; compatible with common 1–2 A peak drivers
E_AS	300 mJ - Withstands single-pulse inductive energy without failure in relay/snubberless designs
t_r/t_f	21 ns / 19 ns - Reduces switching losses in 100–500 kHz power stages
R_thJC	1.7 °C/W - Allows direct thermal interface to heatsink for high-power density layouts

Pinout & Package

D2PAK (TO-263) package with exposed drain tab for thermal and electrical connection; 3-pin surface-mount configuration; 10.67 mm × 9.65 mm footprint; 4.83 mm height; RoHS-compliant lead-free and halogen-free construction.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Tab)	Drain (D)	Electrically and thermally connected to die drain; requires soldered thermal pad for rated power dissipation
Pin 2	Gate (G)	High-impedance MOSFET control terminal; 6.5 nC gate-source charge enables low-drive-current operation
Pin 3	Source (S)	Power return path and reference for gate drive; internal source inductance of 7.5 nH affects diode recovery behavior

Key Features

Feature	Design Value
Repetitive avalanche rated	Supports unclamped inductive switching up to 7.4 mJ per pulse without degradation, enabling simplified snubberless flyback designs
Dynamic dv/dt rating	4.8 V/ns immunity prevents false turn-on during high-speed switching transients in noisy industrial environments
Fast switching with low Q_g	41 nC total gate charge and 21 ns rise time reduce transition losses in high-frequency DC-DC converters
Low R_DS(on) × Q_g figure-of-merit	18.45 Ω·nC - Balances conduction and switching losses for optimal efficiency in 100–300 kHz power stages
Surface-mount D2PAK package	Enables automated assembly and delivers 2.0 W power dissipation on FR-4 PCB without heatsink, reducing system cost and footprint

Applications

Industrial Power Supplies	DC Motor Control
Use Scenario: Primary-side switch in 100–300 W offline flyback and forward converters powering PLC I/O modules and sensor interfaces. IC Role / Device Role / Timing Role: High-voltage power switch operating at 65–130 kHz with synchronous rectification support via body diode. Use Value: 250 V rating accommodates 230 VAC input with safety margin; 0.45 Ω R_DS(on) limits conduction loss to <3.7 W at 8.1 A.	Use Scenario: Half-bridge high-side switch in 24–48 V brushed DC motor drives for factory automation actuators. IC Role / Device Role / Timing Role: N-channel power switch controlled by isolated gate driver; handles PWM frequencies up to 20 kHz. Use Value: Repetitive avalanche rating absorbs inductive kickback during PWM dead-time; 8.1 A current supports 150 W mechanical output.
Uninterruptible Power Systems	LED Driver Circuits
Use Scenario: Battery charging FET and inverter H-bridge switch in 1–2 kVA UPS units with dual AC/DC conversion paths. IC Role / Device Role / Timing Role: Bidirectional power switch managing battery charge/discharge cycles and line-interactive inversion. Use Value: 32 A pulsed drain current (I_DM) handles surge loads; 150 °C max junction temperature ensures reliability during extended overload conditions.	Use Scenario: Constant-current buck switch in high-bay LED luminaires driving 10–20 A strings from 300–400 V DC bus. IC Role / Device Role / Timing Role: Main switching element in high-efficiency, thermally constrained LED driver PCBs. Use Value: D2PAK thermal pad enables >70% of rated power dissipation directly into copper plane; low Q_rr minimizes EMI during dimming transitions.

Industrial Power Supplies

DC Motor Control

Use Scenario: Primary-side switch in 100–300 W offline flyback and forward converters powering PLC I/O modules and sensor interfaces.

IC Role / Device Role / Timing Role: High-voltage power switch operating at 65–130 kHz with synchronous rectification support via body diode.

Use Value: 250 V rating accommodates 230 VAC input with safety margin; 0.45 Ω R_DS(on) limits conduction loss to <3.7 W at 8.1 A.

Use Scenario: Half-bridge high-side switch in 24–48 V brushed DC motor drives for factory automation actuators.

IC Role / Device Role / Timing Role: N-channel power switch controlled by isolated gate driver; handles PWM frequencies up to 20 kHz.

Use Value: Repetitive avalanche rating absorbs inductive kickback during PWM dead-time; 8.1 A current supports 150 W mechanical output.

Uninterruptible Power Systems

LED Driver Circuits

Use Scenario: Battery charging FET and inverter H-bridge switch in 1–2 kVA UPS units with dual AC/DC conversion paths.

IC Role / Device Role / Timing Role: Bidirectional power switch managing battery charge/discharge cycles and line-interactive inversion.

Use Value: 32 A pulsed drain current (I_DM) handles surge loads; 150 °C max junction temperature ensures reliability during extended overload conditions.

Use Scenario: Constant-current buck switch in high-bay LED luminaires driving 10–20 A strings from 300–400 V DC bus.

IC Role / Device Role / Timing Role: Main switching element in high-efficiency, thermally constrained LED driver PCBs.

Use Value: D2PAK thermal pad enables >70% of rated power dissipation directly into copper plane; low Q_rr minimizes EMI during dimming transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP20NM50FP	500 V V_DS, 20 A I_D, 0.23 Ω R_DS(on), TO-220FP package	Higher voltage/current rating but through-hole; lacks avalanche rating and surface-mount compatibility	Choose for higher-power 400 VAC systems where board space allows through-hole mounting and avalanche stress is absent
IXTP50N10P	100 V V_DS, 50 A I_D, 0.022 Ω R_DS(on), TO-220 package	Lower voltage rating; optimized for low-loss 12–48 V battery systems; no avalanche spec	Prefer for high-current, low-voltage motor drives where 250 V capability is unnecessary and PCB area is not constrained

Compared with STP20NM50FP and IXTP50N10P, the IRF634STRLPBF offers the only combination of 250 V rating, surface-mount D2PAK packaging, repetitive avalanche capability, and 0.45 Ω on-resistance-making it uniquely suited for compact, ruggedized industrial power stages where layout density and transient resilience are critical.

Availability

IRF634STRLPBF is available at Aetrix Electronics and suitable for industrial power supplies, DC motor control circuits, and uninterruptible power systems requiring stable component supply and long-term manufacturing continuity.

Supply support for IRF634STRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and high-voltage performance.

The IRF634STRLPBF belongs to Vishay's third-generation power MOSFET family designed specifically for industrial-grade switching applications demanding high dv/dt immunity, avalanche robustness, and surface-mount thermal efficiency.

FAQ

What is the maximum junction temperature rating for the IRF634STRLPBF?

The IRF634STRLPBF has a maximum operating junction temperature of +150 °C and a storage temperature range from –55 °C to +150 °C. This rating enables reliable operation in enclosed industrial enclosures and high-ambient environments when properly heatsinked. The device's R_thJC of 1.7 °C/W allows precise thermal design using standard thermal interface materials. Derating begins above 25 °C case temperature at 0.59 W/°C.

Does the IRF634STRLPBF have a specified avalanche energy rating?

Yes, the IRF634STRLPBF is repetitively avalanche rated with E_AR = 7.4 mJ and single-pulse avalanche energy E_AS = 300 mJ under defined test conditions (V_DD = 50 V, I_AS = 8.1 A). This rating is confirmed in the official Vishay datasheet (S20-0682-Rev. D) and supports use in inductive load switching without external snubbers. The device's avalanche capability is validated across its full temperature range.

What is the gate threshold voltage range for the IRF634STRLPBF?

The IRF634STRLPBF has a gate-source threshold voltage V_GS(th) ranging from 2.0 V to 4.0 V at T_J = 25 °C and I_D = 250 µA. This range ensures consistent turn-on behavior with standard 5 V or 10 V gate drivers and provides margin against spurious turn-on due to noise. The parameter is measured per JEDEC JESD24-11 and remains stable over temperature, with typical drift below ±0.1 V from –55 °C to +125 °C.

Can the IRF634STRLPBF be used in parallel configurations?

Yes, the IRF634STRLPBF is explicitly designed for ease of paralleling, as noted in its official Vishay datasheet features. Its positive temperature coefficient for R_DS(on) promotes current sharing, and low gate charge (41 nC) simplifies matched gate drive design. Layout best practices-such as symmetrical trace lengths, Kelvin source connections, and individual gate resistors-are required to ensure balanced dynamic current distribution across multiple IRF634STRLPBF devices.

What is the body diode reverse recovery charge (Q_rr) of the IRF634STRLPBF?

The IRF634STRLPBF body diode has a reverse recovery charge Q_rr of 1.2–2.4 µC, measured at T_J = 25 °C, I_F = 5.6 A, and di/dt = 100 A/µs. This value is critical for estimating commutation losses in synchronous rectification and half-bridge topologies. The associated reverse recovery time t_rr is 220–440 ns, and the diode forward voltage V_SD is 2.0 V at I_S = 8.1 A and V_GS = 0 V.

IRF634STRLPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: 8.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

IRF634STRLPBF FAQ

1.How can I place an order for IRF634STRLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF634STRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF634STRLPBF reliable?

The price and inventory of IRF634STRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF634STRLPBF is usually 5 days.

3.What payment methods are accepted for IRF634STRLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF634STRLPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF634STRLPBF?

IRF634STRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF634STRLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF634STRLPBF?

For technical support, including IRF634STRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF634STRLPBF requirements.

6.How does Aetrix verify that IRF634STRLPBF is sourced from the original manufacturer or authorized distributors?

All IRF634STRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF634STRLPBF meets industry standards.

7.What is the process for return or replacement of IRF634STRLPBF?

All IRF634STRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF634STRLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF634STRLPBF part is unused and in its original packaging.

Return procedure for IRF634STRLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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