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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF634STRRPBF

Name: IRF634STRRPBF
Brand: Vishay Siliconix
SKU: IRF634STRRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF634STRRPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF634STRRPBF.pdf

Description:: MOSFET N-CH 250V 8.1A D2PAK

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Product details

Overview

IRF634STRRPBF from Vishay Siliconix is a surface-mount N-channel power MOSFET in D2PAK (TO-263) package, rated for 250 V drain-source voltage, 8.1 A continuous drain current at 25 °C, and 0.45 Ω R_DS(on) at V_GS = 10 V. It delivers fast switching, repetitive avalanche capability, and robust dv/dt immunity for high-reliability DC-DC converters and motor control stages.

For engineers reviewing the IRF634STRRPBF datasheet, IRF634STRRPBF pinout, IRF634STRRPBF application, or IRF634STRRPBF equivalent, key selection criteria include its 74 W junction-to-case thermal rating, 41 nC total gate charge, 300 mJ single-pulse avalanche energy, and suitability for high-current, medium-voltage industrial power switching where ruggedness and surface-mount scalability are required.

Technical Context

This third-generation power MOSFET employs planar silicon technology with optimized die layout to achieve low R_DS(on) while maintaining high avalanche ruggedness and stable dynamic performance across temperature. Its gate threshold voltage range (2.0–4.0 V) ensures reliable turn-on with standard 10 V logic-level drivers.

The device integrates a fast-recovery body diode (t_rr = 220–440 ns, Q_rr = 1.2–2.4 μC) and exhibits low internal inductance (L_D = 4.5 nH, L_S = 7.5 nH), supporting clean switching waveforms in hard-switched topologies without external snubbing.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	250 V - Supports 200 V DC bus designs with 25 % safety margin
R_DS(on) @ V_GS = 10 V	0.45 Ω - Enables ≤ 18.5 W conduction loss at 8.1 A ID
Q_g	41 nC - Requires ~0.41 mC gate drive per 10 kHz switching cycle
I_D (T_C = 25 °C)	8.1 A - Delivers full rated current with heatsink or PCB copper area
E_AS	300 mJ - Withstands unclamped inductive energy spikes in relay/motor drive faults
t_rr (body diode)	220–440 ns - Minimizes reverse recovery losses in synchronous rectification
R_thJC	1.7 °C/W - Allows direct thermal path to heatsink for high-power density layouts

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration (G, D, S); 14.61–15.88 mm height; 8.38–9.65 mm width; 9.65–10.67 mm length; recommended minimum PCB pad: 10.668 × 9.017 mm (0.420″ × 0.355″).

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control input	Accepts 10 V logic-level drive; 6.5 nC Qgs enables fast turn-on with low driver stress
D (Drain)	High-side power output	Exposed metal tab - must be electrically connected to high-voltage node and thermally coupled to heatsink
S (Source)	Power return / reference	Common return for gate drive and load current; low-inductance source path critical for dv/dt stability

Key Features

Feature	Design Value
Repetitive avalanche rated	7.4 mJ per pulse - supports continuous operation under transient overloads without derating
Dynamic dv/dt immunity	4.8 V/ns - Prevents false turn-on in high-noise bridge configurations
Fast switching	td(on) = 9.6 ns, tr = 21 ns - Reduces switching losses in 100–500 kHz SMPS designs
Low gate input resistance	0.6–2.9 Ω - Simplifies gate driver selection and reduces RC delay sensitivity
RoHS-compliant, lead-free	Meets JEDEC J-STD-609A Class 2a marking - suitable for automotive and industrial compliance programs

Applications

Industrial Motor Drives	DC-DC Converters
Use Scenario: Half-bridge switching stage in 24–48 V BLDC motor controllers driving fans, pumps, or conveyors. IC Role / Device Role / Timing Role: High-side N-channel switch controlling phase voltage; synchronized with complementary low-side FET. Use Value: 0.45 Ω R_DS(on) and 8.1 A rating enable >95 % efficiency at 5 A load; avalanche rating protects against back-EMF transients.	Use Scenario: Primary-side switch in isolated flyback or forward converter for industrial power supplies (24 V/5 A output). IC Role / Device Role / Timing Role: Main power switch operating at 100–200 kHz; handles 200 V reflected output voltage plus leakage spike margin. Use Value: 250 V V_DS and 300 mJ E_AS ensure safe operation during transformer reset and output short-circuit events.
Uninterruptible Power Supplies	Lighting Ballasts
Use Scenario: Inverter stage in line-interactive UPS converting 350 V DC bus to 230 V AC output. IC Role / Device Role / Timing Role: Bridge-leg switch in H-bridge topology; commutated at 50/60 Hz with PWM modulation for waveform shaping. Use Value: Low R_DS(on) minimizes conduction loss during extended battery runtime; rugged dv/dt rating prevents shoot-through in noisy grid environments.	Use Scenario: Resonant half-bridge driver in electronic CFL or LED retrofit ballasts (100–250 V AC input). IC Role / Device Role / Timing Role: High-frequency (25–50 kHz) resonant switch enabling zero-voltage switching (ZVS) startup and regulation. Use Value: Fast t_r/t_f and low C_oss (190 pF) support efficient ZVS operation; body diode t_rr < 440 ns avoids cross-conduction losses.

Industrial Motor Drives

DC-DC Converters

Use Scenario: Half-bridge switching stage in 24–48 V BLDC motor controllers driving fans, pumps, or conveyors.

IC Role / Device Role / Timing Role: High-side N-channel switch controlling phase voltage; synchronized with complementary low-side FET.

Use Value: 0.45 Ω R_DS(on) and 8.1 A rating enable >95 % efficiency at 5 A load; avalanche rating protects against back-EMF transients.

Use Scenario: Primary-side switch in isolated flyback or forward converter for industrial power supplies (24 V/5 A output).

IC Role / Device Role / Timing Role: Main power switch operating at 100–200 kHz; handles 200 V reflected output voltage plus leakage spike margin.

Use Value: 250 V V_DS and 300 mJ E_AS ensure safe operation during transformer reset and output short-circuit events.

Uninterruptible Power Supplies

Lighting Ballasts

Use Scenario: Inverter stage in line-interactive UPS converting 350 V DC bus to 230 V AC output.

IC Role / Device Role / Timing Role: Bridge-leg switch in H-bridge topology; commutated at 50/60 Hz with PWM modulation for waveform shaping.

Use Value: Low R_DS(on) minimizes conduction loss during extended battery runtime; rugged dv/dt rating prevents shoot-through in noisy grid environments.

Use Scenario: Resonant half-bridge driver in electronic CFL or LED retrofit ballasts (100–250 V AC input).

IC Role / Device Role / Timing Role: High-frequency (25–50 kHz) resonant switch enabling zero-voltage switching (ZVS) startup and regulation.

Use Value: Fast t_r/t_f and low C_oss (190 pF) support efficient ZVS operation; body diode t_rr < 440 ns avoids cross-conduction losses.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP20NM50FP	500 V V_DS, 20 A I_D, 0.27 Ω R_DS(on), TO-220FP package	Higher voltage/current rating but through-hole; lacks surface-mount scalability and same avalanche energy	Choose for higher-voltage legacy designs requiring TO-220 footprint; not drop-in for D2PAK PCBs
IXTP50N10P	100 V V_DS, 50 A I_D, 0.022 Ω R_DS(on), TO-220 package	Lower voltage rating, much higher current; no avalanche rating specified; different thermal profile	Choose only for low-voltage, high-current applications where 250 V margin is unnecessary

Compared with STP20NM50FP and IXTP50N10P, IRF634STRRPBF offers optimal balance of 250 V rating, D2PAK surface-mount compatibility, and verified 300 mJ avalanche robustness-making it uniquely suited for space-constrained, medium-voltage industrial switching where reliability under transient stress is non-negotiable.

Availability

IRF634STRRPBF is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC converters, uninterruptible power supplies, and lighting ballasts requiring stable component supply and long-term manufacturing continuity.

Supply support for IRF634STRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRF634S family was designed for rugged medium-voltage power switching in space-constrained applications-emphasizing avalanche survivability, surface-mount thermal performance, and consistent parametric stability across temperature and production lots.

FAQ

What is the maximum continuous drain current for IRF634STRRPBF at 100 °C case temperature?

The maximum continuous drain current for IRF634STRRPBF is 5.1 A when the case temperature is 100 °C. This derating reflects thermal limitations of the D2PAK package and ensures safe operation within the 150 °C maximum junction temperature limit. The 8.1 A rating applies only at TC = 25 °C, and linear derating (0.59 W/°C) must be applied above that point. IRF634STRRPBF maintains stable R_DS(on) up to 150 °C junction temperature.

Does IRF634STRRPBF have a specified avalanche energy rating?

Yes, IRF634STRRPBF is repetitively avalanche rated with 7.4 mJ maximum repetitive avalanche energy (E_AR) and 300 mJ single-pulse avalanche energy (E_AS). These values are measured under defined test conditions (V_DD = 50 V, I_AS = 8.1 A, L = 7.3 mH, R_g = 25 Ω). The device's avalanche capability is integral to its ruggedized design and validated per Vishay's S20-0682 specification. IRF634STRRPBF does not require external clamping in properly designed inductive switching circuits.

What is the gate threshold voltage range for IRF634STRRPBF?

The gate threshold voltage (V_GS(th)) for IRF634STRRPBF is specified from 2.0 V to 4.0 V at V_DS = V_GS and I_D = 250 μA. This range ensures reliable turn-on with standard 5 V or 10 V gate drivers while avoiding unintended conduction near ground potential. The typical value is ~3.0 V, and the device remains fully enhanced above 10 V. IRF634STRRPBF is not a logic-level MOSFET and requires ≥10 V for minimal R_DS(on).

Can IRF634STRRPBF be used in parallel configurations?

Yes, IRF634STRRPBF is explicitly designed for ease of paralleling, as confirmed in its official features list. Its positive temperature coefficient of R_DS(on) promotes current sharing, and low gate input resistance (0.6–2.9 Ω) minimizes gate loop imbalance. For stable parallel operation, matched gate resistors and symmetrical PCB layout are required. IRF634STRRPBF has been validated in multi-device configurations for high-current motor drive inverters and redundant PSU outputs.

What is the thermal resistance from junction to ambient for IRF634STRRPBF on a standard PCB?

The maximum junction-to-ambient thermal resistance (R_thJA) for IRF634STRRPBF mounted on a 1" square FR-4 PCB is 40 °C/W. This value assumes standard JEDEC test conditions and defines worst-case natural-convection cooling. When mounted directly to an external heatsink via the exposed drain pad, R_thJC drops to 1.7 °C/W - enabling significantly higher power dissipation. IRF634STRRPBF's D2PAK package is optimized for both PCB and heatsink thermal paths.

IRF634STRRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 250 V

Current - Continuous Drain (Id) @ 25°C:: 8.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 450mOhm @ 5.1A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 41 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 770 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta), 74W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

IRF634STRRPBF FAQ

1.How can I place an order for IRF634STRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF634STRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF634STRRPBF reliable?

The price and inventory of IRF634STRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF634STRRPBF is usually 5 days.

3.What payment methods are accepted for IRF634STRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF634STRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF634STRRPBF?

IRF634STRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF634STRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF634STRRPBF?

For technical support, including IRF634STRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF634STRRPBF requirements.

6.How does Aetrix verify that IRF634STRRPBF is sourced from the original manufacturer or authorized distributors?

All IRF634STRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF634STRRPBF meets industry standards.

7.What is the process for return or replacement of IRF634STRRPBF?

All IRF634STRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF634STRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF634STRRPBF part is unused and in its original packaging.

Return procedure for IRF634STRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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