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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics IRF640

Name: IRF640
Brand: STMicroelectronics
SKU: IRF640
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF640

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRF640.pdf

Description:: MOSFET N-CH 200V 18A TO220AB

Quantity:: RFQ Add To RFQ list

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Inventory:4,287

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Product details

Overview

IRF640 from STMicroelectronics is an N-channel enhancement-mode power MOSFET in TO-220 package, rated for 200V drain-source voltage, 18A continuous drain current at 25°C, and 0.15Ω typical R_DS(on) at V_GS = 10V. It employs MESH OVERLAY™ strip layout technology to achieve high dv/dt immunity and low intrinsic capacitances, enabling robust switching in DC-DC converters and motor drive half-bridges.

For engineers reviewing the IRF640 datasheet, IRF640 pinout, IRF640 application, or IRF640 equivalent, key selection considerations include its 125W total dissipation (TO-220), 1.0°C/W junction-to-case thermal resistance, avalanche energy rating of 280mJ, and gate charge profile optimized for fast turn-on with minimal drive loss.

Technical Context

This MOSFET operates as a unidirectional high-side or low-side switch in hard-switched topologies. Its 200V V_DS rating supports 120VAC rectified bus applications, while the 72A pulsed drain current enables short-duration overload handling in UPS inverters and solenoid drivers.

The device features a built-in body diode with 1.5V forward voltage at 18A and 240ns reverse recovery time under specified conditions (T_j = 150°C, di/dt = 100A/µs). Its 1200pF input capacitance and 60pF reverse transfer capacitance support stable gate driving with moderate external gate resistors.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200V - Supports operation across 120VAC-derived 340V DC bus with margin
R_DS(on)	0.15Ω typ @ V_GS=10V - Delivers ≤2.4W conduction loss at 9A continuous
I_D (cont)	18A @ T_C=25°C - Requires heatsink for sustained >11A operation above 100°C case temp
Q_g	55nC typ - Enables <1µs turn-on with 50mA gate driver at 10V swing
E_AS	280mJ - Withstands single unclamped inductive switching events up to 50V × 18A
dv/dt	5V/ns - Resists false triggering during fast transient coupling in noisy industrial environments
R_thj-case	1.0°C/W (TO-220) - Allows 125W dissipation with ≤125°C junction rise above 25°C case

Pinout & Package

IRF640 uses standard TO-220 package with isolated tab (drain-connected), 3-pin vertical mounting configuration. Pin 1 is Gate, Pin 2 is Drain (tab), Pin 3 is Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Left)	Gate	High-impedance control terminal requiring ≥10V to fully enhance; sensitive to ESD
Pin 2 (Center/Tab)	Drain	High-voltage power node electrically connected to metal tab; requires insulating washer when mounted to heatsink
Pin 3 (Right)	Source	Power return path and reference for gate drive; common node for current sensing and feedback

Key Features

Feature	Design Value
MESH OVERLAY™ process	Enables lower R_DS(on) and higher cell density than conventional planar MOSFETs
Extremely high dv/dt capability	5V/ns rating prevents spurious turn-on during fast voltage transients in SMPS
Low C_iss/C_rss ratio	1200pF / 60pF = 20:1 - Improves Miller immunity and reduces gate drive power
Integrated source-drain diode	18A continuous / 72A pulsed body diode enables synchronous rectification in flyback converters
Avalanche-rated design	280mJ single-pulse energy allows safe operation without external snubbers in inductive loads

Applications

DC-DC Converter Switch

Motor Drive Half-Bridge

Use Scenario: High-efficiency 12V-to-48V boost converter in telecom power supplies.

IC Role / Device Role / Timing Role: Primary high-side switching element operating at 100kHz with 50% duty cycle.

Use Value: 0.15Ω R_DS(on) limits conduction loss to 1.2W at 9A, supporting >94% efficiency at full load.

Use Scenario: 24V brushed DC motor H-bridge in industrial actuator control.

IC Role / Device Role / Timing Role: Low-side switch in complementary pair with IRF640 on opposite leg.

Use Value: 72A pulsed current rating handles 3× stall current surges without SOA violation.

UPS Inverter Output Stage

Solenoid Driver

Use Scenario: 600W line-interactive UPS delivering pure sine wave output.

IC Role / Device Role / Timing Role: Final-stage switching device in full-bridge inverter topology.

Use Value: 200V V_DS provides 30% margin over 340V DC bus, ensuring reliability during brownouts.

Use Scenario: 24V/15A solenoid valve driver in automated fluid control system.

IC Role / Device Role / Timing Role: Single-ended switch controlling solenoid coil with freewheeling path via body diode.

Use Value: 240ns t_rr minimizes voltage overshoot during coil de-energization, reducing snubber size by 40%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP16NF20	200V, 16A, 0.15Ω R_DS(on), TO-220 - Slightly lower I_D rating but identical on-resistance and voltage class	Same switching speed and thermal profile; suitable where 16A continuous suffices	Select when lower gate charge (42nC vs 55nC) reduces driver stress in high-frequency designs
IRFP460	500V, 20A, 0.27Ω R_DS(on), TO-3P - Higher voltage rating but 80% higher conduction loss at 9A	Required only in 230VAC-fed systems needing >400V blocking; not drop-in for 200V designs	Choose only if system requires 500V V_DS margin; avoid in 200V applications due to excessive R_DS(on)

Compared with STP16NF20 and IRFP460, IRF640 delivers optimal balance of 200V rating, 18A current, and 0.15Ω on-resistance in TO-220 - making it preferred for cost-sensitive 120VAC-derived power stages where thermal management is constrained.

Availability

IRF640 is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, UPS inverters, and solenoid drivers requiring stable component supply and proven industrial reliability.

Supply support for IRF640 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

The IRF640 belongs to ST's legacy Power MOSFET portfolio, engineered specifically for ruggedized switching in industrial power conversion, motor control, and uninterruptible power systems where reliability under repetitive avalanche stress is critical.

FAQ

What is the maximum gate-source voltage for IRF640?

The absolute maximum V_GS is ±20V. Exceeding this risks permanent gate oxide damage. For reliable operation, gate drive should be limited to +10V to +15V for full enhancement and –5V to –10V for fast turn-off, avoiding prolonged exposure near the ±20V limit.

Can IRF640 be used without a heatsink?

No - at 18A continuous current and 0.15Ω R_DS(on), conduction loss exceeds 48W, far exceeding the 1.0°C/W thermal resistance's ability to dissipate heat without a heatsink. Even at 5A, >4W loss requires minimum 25°C/W heatsink for safe operation below 150°C junction temperature.

Does IRF640 have avalanche capability, and how is it rated?

Yes - IRF640 is fully rated for repetitive and non-repetitive avalanche. Its single-pulse avalanche energy E_AS is 280mJ at T_j = 25°C, with 18A repetitive avalanche current I_AS. This enables safe operation in unclamped inductive switching without external snubbers when operated within SOA limits.

How does the body diode performance compare to discrete Schottky diodes?

The integrated body diode has 1.5V forward voltage at 18A and 240ns reverse recovery time - significantly slower and higher-loss than fast Schottky diodes (<0.5V, <50ns). It is suitable for freewheeling in low-frequency (<50kHz) applications but not recommended for high-frequency synchronous rectification where Schottky or GaN alternatives offer superior efficiency.

IRF640 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MESH OVERLAY™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 18A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 180mOhm @ 9A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 72 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1560 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

IRF640 FAQ

1.How can I place an order for IRF640 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF640 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF640 reliable?

The price and inventory of IRF640 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF640 is usually 5 days.

3.What payment methods are accepted for IRF640?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF640 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF640?

IRF640 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF640 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF640?

For technical support, including IRF640 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF640 requirements.

6.How does Aetrix verify that IRF640 is sourced from the original manufacturer or authorized distributors?

All IRF640 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF640 meets industry standards.

7.What is the process for return or replacement of IRF640?

All IRF640 units undergo pre-shipment inspection (PSI). If there is an issue with IRF640, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF640 part is unused and in its original packaging.

Return procedure for IRF640:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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