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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF640L

Name: IRF640L
Brand: Vishay Siliconix
SKU: IRF640L
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF640L

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IRF640L.pdf

Description:: MOSFET N-CH 200V 18A I2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF640L from Vishay Siliconix is a 200 V, 18 A N-channel power MOSFET in I2PAK (TO-262) package, featuring 0.18 Ω R_DS(on) at V_GS = 10 V, 70 nC total gate charge, and full avalanche rating - designed for high-current switching in offline SMPS, motor drives, and DC-DC converters.

For engineers reviewing the IRF640L datasheet, IRF640L pinout, IRF640L application, or IRF640L equivalent, this page delivers verified electrical specs, thermal performance data, diode recovery characteristics, and real-world selection guidance for industrial power stage design.

Technical Context

The IRF640L employs a third-generation planar vertical DMOS structure optimized for ruggedness and fast switching, with dynamic dV/dt rating up to 5.0 V/ns and guaranteed unclamped inductive switching capability (E_AS = 580 mJ). Its body diode exhibits t_rr = 300–610 ns and Q_rr = 3.4–7.1 μC under standardized test conditions.

Thermal design is supported by R_thJC = 1.0 °C/W (junction-to-case), enabling 130 W continuous dissipation at T_C = 25 °C, while its 150 °C maximum junction temperature and RoHS-compliant lead-free construction suit demanding industrial environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200 V - supports 170 VAC rectified bus designs with margin for surge and ringing
R_DS(on)	0.18 Ω @ V_GS = 10 V - limits conduction loss to ≤3.6 W at 11 A continuous drain current
Q_g	70 nC - determines gate drive power requirement and switching speed in hard-switched topologies
I_D (T_C = 100 °C)	11 A - defines usable current derating for heatsink-limited thermal designs
E_AS	580 mJ - enables reliable operation in unclamped inductive load switching without external snubbers
t_rr	300–610 ns - impacts turn-on losses and EMI in synchronous rectification and freewheeling paths
R_thJC	1.0 °C/W - allows direct thermal interface to heatsink with minimal thermal resistance penalty

Pinout & Package

I2PAK (TO-262) package: 3-lead through-hole, low-profile power package with isolated tab (drain-connected), 13.46–14.10 mm length, 9.65–10.67 mm width, 14.61–15.88 mm height, and integral thermal pad for PCB heat transfer.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal requiring ≥10 V drive for full enhancement; input capacitance C_iss = 1300 pF affects driver sizing
2 (D)	Drain	Main high-side power terminal; electrically connected to metal tab - must be insulated from heatsink unless referenced to system ground
3 (S)	Source	Power return path and reference for gate drive; source inductance directly impacts switching stability and dI/dt control

Key Features

Feature	Design Value
Full avalanche rating	Guaranteed single-pulse E_AS = 580 mJ eliminates need for external clamping in inductive switching
150 °C operating temperature	Enables reliable operation in sealed enclosures or high-ambient industrial environments without derating
Fast switching with low Q_gd/Q_gs	Q_gd = 39 nC and Q_gs = 13 nC yield Miller plateau ratio ~3.0 - improves controllability during transition
Dynamic dV/dt rating	5.0 V/ns immunity prevents false turn-on in high-noise power stages with fast-rising bus voltages
Low-profile through-hole mounting	I2PAK footprint provides mechanical robustness and thermal performance comparable to D2PAK but with lower height clearance

Applications

Offline AC-DC Power Supplies	Brushed DC Motor Drives
Use Scenario: Primary-side switch in 100–300 W flyback or forward converters with universal AC input (85–265 VAC). IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer into transformer primary winding during PWM on-time. Use Value: 200 V V_DS and 580 mJ E_AS ensure safe operation across line surges and transformer leakage spikes without snubber loss.	Use Scenario: H-bridge or half-bridge high-side switch driving 24–48 V brushed DC motors in industrial actuators and pumps. IC Role / Device Role / Timing Role: Main power switch delivering bidirectional current to motor windings with controlled turn-on/turn-off timing. Use Value: 11 A continuous current at 100 °C case temperature and fast t_r/t_f (51/36 ns) enable efficient PWM control up to 100 kHz.
DC-DC Boost Converters	Inductive Load Switching
Use Scenario: Boost switch in 12 V to 24/48 V telecom or battery-charging systems handling up to 15 A output current. IC Role / Device Role / Timing Role: Synchronous or asynchronous power switch regulating output voltage via duty-cycle control. Use Value: Low 0.18 Ω R_DS(on) minimizes conduction loss at high load, while body diode t_rr < 610 ns reduces reverse-recovery loss in discontinuous mode.	Use Scenario: Solenoid, relay, or transformer primary driver in factory automation controllers requiring robust inductive turn-off. IC Role / Device Role / Timing Role: Unclamped inductive switch absorbing stored magnetic energy during current interruption. Use Value: Fully rated avalanche capability (I_AR = 18 A, E_AS = 580 mJ) eliminates external TVS or RCD snubbers, reducing BOM count and layout area.

Offline AC-DC Power Supplies

Brushed DC Motor Drives

Use Scenario: Primary-side switch in 100–300 W flyback or forward converters with universal AC input (85–265 VAC).

IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer into transformer primary winding during PWM on-time.

Use Value: 200 V V_DS and 580 mJ E_AS ensure safe operation across line surges and transformer leakage spikes without snubber loss.

Use Scenario: H-bridge or half-bridge high-side switch driving 24–48 V brushed DC motors in industrial actuators and pumps.

IC Role / Device Role / Timing Role: Main power switch delivering bidirectional current to motor windings with controlled turn-on/turn-off timing.

Use Value: 11 A continuous current at 100 °C case temperature and fast t_r/t_f (51/36 ns) enable efficient PWM control up to 100 kHz.

DC-DC Boost Converters

Inductive Load Switching

Use Scenario: Boost switch in 12 V to 24/48 V telecom or battery-charging systems handling up to 15 A output current.

IC Role / Device Role / Timing Role: Synchronous or asynchronous power switch regulating output voltage via duty-cycle control.

Use Value: Low 0.18 Ω R_DS(on) minimizes conduction loss at high load, while body diode t_rr < 610 ns reduces reverse-recovery loss in discontinuous mode.

Use Scenario: Solenoid, relay, or transformer primary driver in factory automation controllers requiring robust inductive turn-off.

IC Role / Device Role / Timing Role: Unclamped inductive switch absorbing stored magnetic energy during current interruption.

Use Value: Fully rated avalanche capability (I_AR = 18 A, E_AS = 580 mJ) eliminates external TVS or RCD snubbers, reducing BOM count and layout area.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF640N	Same die, D2PAK (TO-263) package; R_thJC = 1.0 °C/W identical, but higher R_thJA due to surface-mount thermal path	Better suited for automated SMT assembly; requires larger copper pour for equivalent thermal performance	Choose IRF640N for board-space-constrained SMT designs where reflow compatibility is required
STP20NM60FD	600 V V_DS, 20 A, 0.30 Ω R_DS(on); faster t_r/t_f (30/25 ns), but lower avalanche energy (E_AS = 320 mJ)	Higher voltage rating enables 380 VDC bus use; reduced conduction loss at lower currents but higher switching loss at high frequency	Choose STP20NM60FD when operating above 300 VDC or requiring sub-50 ns switching, accepting trade-off in avalanche margin

Compared with IRF640L, IRF640N offers identical electrical performance in a surface-mount package ideal for high-volume production, while STP20NM60FD trades 200 V rating for 600 V headroom and faster switching - making IRF640L optimal for cost-sensitive, thermally constrained 200 V industrial power stages where avalanche robustness is critical.

Availability

IRF640L is available at Aetrix Electronics and suitable for offline AC-DC power supplies, brushed DC motor drives, and DC-DC boost converters requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial OEM programs.

Supply support for IRF640L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRF640L belongs to Vishay's third-generation power MOSFET family engineered for ruggedized switching in high-current, high-temperature power conversion - emphasizing avalanche survivability, thermal efficiency, and manufacturability in through-hole and surface-mount formats.

FAQ

What is the maximum continuous drain current for IRF640L at 100 °C case temperature?

The IRF640L supports 11 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from the 18 A rating at 25 °C, based on the device's 1.0 °C/W junction-to-case thermal resistance and 150 °C maximum junction temperature limit. Designers must ensure heatsink and PCB layout maintain case temperature ≤100 °C under full load to sustain this current in IRF640L applications.

Does IRF640L have a fully rated avalanche capability, and what is the single-pulse energy limit?

Yes, IRF640L is fully avalanche rated with a guaranteed single-pulse avalanche energy (E_AS) of 580 mJ under standardized test conditions (V_DD = 50 V, I_AS = 18 A, T_J = 25 °C). This rating is validated per JEDEC JESD24-11 and allows the IRF640L to safely absorb inductive energy without external protection in applications such as relay driving, solenoid control, and transformer primary switching - a key differentiator versus non-avalanche-rated MOSFETs.

What is the gate threshold voltage range for IRF640L, and how does it affect drive requirements?

The IRF640L has a gate-source threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V at T_J = 25 °C, meaning it begins conducting at ≥2.0 V but requires ≥10 V gate drive to achieve its specified 0.18 Ω R_DS(on). This threshold spread necessitates a well-regulated gate driver capable of delivering ≥12 V to ensure consistent on-resistance and minimize conduction losses across temperature and unit variation in IRF640L implementations.

How does the body diode performance of IRF640L compare to standard FRDs in freewheeling applications?

The IRF640L body diode exhibits t_rr = 300–610 ns and Q_rr = 3.4–7.1 μC at T_J = 25 °C, which is slower and higher-charge than purpose-built fast recovery diodes (FRDs), but sufficient for ≤100 kHz hard-switched freewheeling. Its V_SD = 2.0 V at I_S = 18 A increases conduction loss versus Schottky diodes, yet the integrated structure eliminates component count - making IRF640L suitable for cost-sensitive, moderate-frequency designs where discrete diode addition is impractical.

Is IRF640L RoHS-compliant, and what is its lead finish?

Yes, IRF640L is RoHS-compliant and halogen-free, with a lead (Pb)-free and matte tin-plated termination per Vishay's "-GE3" suffix designation. The device meets EU RoHS Directive 2011/65/EU and conforms to Vishay's material categorization standard (document 99912). No lead (Pb) is present in the terminations or internal structure, and the packaging uses environmentally compliant molding compounds - confirmed in the official Vishay datasheet S16-0014-Rev. E for IRF640L.

IRF640L Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 18A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 180mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 70 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1300 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta), 130W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: I2PAK

IRF640L FAQ

1.How can I place an order for IRF640L through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF640L on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF640L reliable?

The price and inventory of IRF640L are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF640L is usually 5 days.

3.What payment methods are accepted for IRF640L?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF640L transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF640L?

IRF640L orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF640L order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF640L?

For technical support, including IRF640L datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF640L requirements.

6.How does Aetrix verify that IRF640L is sourced from the original manufacturer or authorized distributors?

All IRF640L products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF640L meets industry standards.

7.What is the process for return or replacement of IRF640L?

All IRF640L units undergo pre-shipment inspection (PSI). If there is an issue with IRF640L, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF640L part is unused and in its original packaging.

Return procedure for IRF640L:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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