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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF640LPBF

Name: IRF640LPBF
Brand: Vishay Siliconix
SKU: IRF640LPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF640LPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IRF640LPBF.pdf

Description:: MOSFET N-CH 200V 18A TO262-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF640LPBF from Vishay Siliconix is a 200 V, 18 A, N-channel power MOSFET in I2PAK (TO-262) package, featuring 0.18 Ω R_DS(on) at V_GS = 10 V, 70 nC total gate charge, and full avalanche rating-designed for high-current DC-DC converters, motor drives, and industrial switch-mode power supplies.

For engineers reviewing the IRF640LPBF datasheet, IRF640LPBF pinout, IRF640LPBF application, or IRF640LPBF equivalent, this part supports fast-switching, ruggedized operation up to 150 °C junction temperature, with validated unclamped inductive switching performance and peak diode recovery dV/dt of 5.0 V/ns.

Technical Context

This device implements a planar silicon-gate enhancement-mode structure optimized for low conduction loss and robust transient energy handling. Its 1.0 °C/W junction-to-case thermal resistance enables high-power dissipation in compact through-hole layouts, while the integral body diode supports synchronous rectification and freewheeling in hard-switched topologies.

The IRF640LPBF operates with gate threshold voltage between 2.0 V and 4.0 V, exhibits 1300 pF input capacitance at V_DS = 25 V, and delivers 6.7 S forward transconductance-enabling stable gate drive control across wide load and temperature ranges without external bias compensation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200 V - supports bus voltages up to 160 V DC with margin for voltage spikes in industrial SMPS
R_DS(on) @ V_GS = 10 V	0.18 Ω - limits conduction loss to ≤3.6 W at 11 A continuous drain current
Q_g	70 nC - determines gate driver power requirement and switching speed trade-off in 100–500 kHz designs
I_D (T_C = 100 °C)	11 A - defines maximum sustained current under heatsink-limited thermal conditions
E_AS	580 mJ - enables reliable operation in unclamped inductive switching events without snubber circuits
dV/dt Rating	5.0 V/ns - ensures immunity to false turn-on during high-slew-rate voltage transients in bridge configurations
T_J Range	−55 to +150 °C - allows deployment in automotive under-hood and industrial ambient environments

Pinout & Package

I2PAK (TO-262) package: 3-lead through-hole outline with isolated tab (drain), 15.88 mm height, 9.65 mm width, and 13.46 mm length-optimized for low-profile PCB mounting and mechanical stability in high-vibration environments.

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control electrode	Accepts 10 V logic-level drive; 13 nC gate-source charge enables fast turn-on with standard MOSFET drivers
Drain (D)	High-side power terminal	Connected to internal die backside; electrically tied to exposed metal tab for direct heatsinking
Source (S)	Reference node	Serves as return path for 18 A pulsed current; low-inductance layout critical for minimizing switching overshoot

Key Features

Feature	Design Value
Full Avalanche Rating	580 mJ single-pulse energy tolerance eliminates need for external clamping in inductive load switching
Dynamic dV/dt Immunity	5.0 V/ns rated capability prevents spurious turn-on during fast voltage transitions in half-bridge legs
150 °C Maximum Junction Temperature	Enables operation in sealed enclosures or high-ambient industrial settings without derating below 11 A
Low R_DS(on) × Q_g Figure of Merit	12.6 Ω·nC - balances conduction efficiency and switching loss for 100–250 kHz power stages
Integral Body Diode	300–610 ns reverse recovery time with 3.4–7.1 μC Q_rr supports moderate-frequency freewheeling in non-synchronous converters

Applications

Motor Drive Inverter	Industrial SMPS Primary Switch
Use Scenario: 3-phase BLDC motor control in HVAC blowers and conveyor systems operating at 48–100 V DC bus. IC Role / Device Role / Timing Role: High-side N-channel switch in 6-step commutation, driven by isolated gate driver with 9.1 Ω series resistor. Use Value: 0.18 Ω R_DS(on) reduces conduction loss by 35% vs. comparable 0.28 Ω devices, improving thermal margin at 15 A RMS load current.	Use Scenario: 1 kW offline flyback or forward converter in factory automation power supplies. IC Role / Device Role / Timing Role: Primary-side switching element handling 18 A pulsed drain current at 100 kHz with 50% duty cycle. Use Value: 580 mJ avalanche energy rating permits elimination of RCD clamp networks, simplifying BOM and improving reliability.
DC-DC Buck Converter	UPS Output Stage
Use Scenario: 48 V to 12 V, 30 A step-down converter for telecom shelf power distribution. IC Role / Device Role / Timing Role: Low-side synchronous rectifier with body diode conducting during dead-time, controlled by complementary PWM. Use Value: 2.0 V body diode forward voltage at 18 A enables <1.2 W conduction loss during dead-time, reducing thermal stress on gate driver IC.	Use Scenario: Online double-conversion UPS output inverter stage delivering 230 V AC from 380 V DC link. IC Role / Device Role / Timing Role: Leg switch in full-bridge topology, subjected to repetitive 13 mJ avalanche events during short-circuit protection activation. Use Value: Fully rated 13 mJ repetitive avalanche energy ensures no degradation after >10⁴ fault cycles, meeting UL 1741 surge endurance requirements.

Motor Drive Inverter

Industrial SMPS Primary Switch

Use Scenario: 3-phase BLDC motor control in HVAC blowers and conveyor systems operating at 48–100 V DC bus.

IC Role / Device Role / Timing Role: High-side N-channel switch in 6-step commutation, driven by isolated gate driver with 9.1 Ω series resistor.

Use Value: 0.18 Ω R_DS(on) reduces conduction loss by 35% vs. comparable 0.28 Ω devices, improving thermal margin at 15 A RMS load current.

Use Scenario: 1 kW offline flyback or forward converter in factory automation power supplies.

IC Role / Device Role / Timing Role: Primary-side switching element handling 18 A pulsed drain current at 100 kHz with 50% duty cycle.

Use Value: 580 mJ avalanche energy rating permits elimination of RCD clamp networks, simplifying BOM and improving reliability.

DC-DC Buck Converter

UPS Output Stage

Use Scenario: 48 V to 12 V, 30 A step-down converter for telecom shelf power distribution.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier with body diode conducting during dead-time, controlled by complementary PWM.

Use Value: 2.0 V body diode forward voltage at 18 A enables <1.2 W conduction loss during dead-time, reducing thermal stress on gate driver IC.

Use Scenario: Online double-conversion UPS output inverter stage delivering 230 V AC from 380 V DC link.

IC Role / Device Role / Timing Role: Leg switch in full-bridge topology, subjected to repetitive 13 mJ avalanche events during short-circuit protection activation.

Use Value: Fully rated 13 mJ repetitive avalanche energy ensures no degradation after >10⁴ fault cycles, meeting UL 1741 surge endurance requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF640NPbF	Same die, D2PAK (TO-263) surface-mount package; 1.0 °C/W R_thJC identical but 40 °C/W R_thJA vs. 30 °C/W for I2PAK	Requires reflow-compatible PCB layout; unsuitable for low-profile through-hole assemblies	Select when automated assembly and higher power density outweigh mechanical height constraints
STP20NM60FD	600 V rating, 0.30 Ω R_DS(on), 45 nC Q_g, SuperMESH™ process; lower voltage headroom but faster switching	Better suited for 400 V DC-link PFC stages than 200 V primary switches	Choose only if system requires >400 V blocking and can accept 67% higher conduction loss at 11 A

Compared with IRF640LPBF, IRF640NPbF offers identical electrical performance in a surface-mount package ideal for space-constrained boards, while STP20NM60FD trades voltage rating and on-resistance for reduced gate charge-making it viable only in higher-voltage, lower-current applications where switching loss dominates.

Availability

IRF640LPBF is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, and DC-DC converters requiring stable component supply and long-term manufacturing continuity.

Supply support for IRF640LPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding industrial and automotive applications.

The IRF640LPBF belongs to Vishay's third-generation power MOSFET family, engineered for optimal balance of low R_DS(on), fast switching, and rugged avalanche performance in high-current, medium-voltage power conversion.

FAQ

What is the maximum continuous drain current for IRF640LPBF at 100 °C case temperature?

The IRF640LPBF supports 11 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal equilibrium under heatsink-limited conditions and assumes proper PCB copper area per Vishay's recommended pad layout for I2PAK packages. Exceeding this current without additional cooling risks junction temperature exceeding 150 °C.

Does IRF640LPBF have a fully rated avalanche capability, and what is the single-pulse energy limit?

Yes, IRF640LPBF is fully avalanche rated with a single-pulse avalanche energy (E_AS) of 580 mJ under test conditions of V_DD = 50 V, starting T_J = 25 °C, L = 2.7 mH, and R_g = 25 Ω. This rating is validated per JEDEC standards and allows safe operation in inductive switching applications without external snubbers, provided pulse width remains within thermal limits defined in Figure 11 of the datasheet.

What is the gate threshold voltage range for IRF640LPBF, and how does it affect drive circuit design?

The gate threshold voltage (V_GS(th)) for IRF640LPBF is specified from 2.0 V to 4.0 V at V_DS = V_GS and I_D = 250 μA. This range necessitates gate drive voltages ≥10 V to ensure full enhancement and minimal R_DS(on); using 5 V logic-level drivers will result in significantly higher on-resistance and thermal stress. The IRF640LPBF is not a logic-level MOSFET.

Can IRF640LPBF be used in parallel configurations, and what precautions are required?

IRF640LPBF can be paralleled for higher current handling, but requires matched gate resistors (≤1 Ω difference), symmetrical PCB layout to minimize loop inductance, and individual source resistors for current balancing. Its positive R_DS(on) temperature coefficient aids current sharing above 100 °C, but thermal coupling between devices must be managed via shared heatsinking to prevent thermal runaway during transient overload.

What is the body diode reverse recovery time (t_rr) of IRF640LPBF, and how does it impact hard-switched applications?

The body diode reverse recovery time (t_rr) of IRF640LPBF is 300–610 ns at T_J = 25 °C, I_F = 18 A, and dI/dt = 100 A/μs. In hard-switched topologies like buck or forward converters, this recovery behavior contributes to switching losses and EMI generation; designers should account for 3.4–7.1 μC reverse recovery charge (Q_rr) in gate driver sizing and snubber design to avoid voltage overshoot during turn-on.

IRF640LPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 18A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 180mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 70 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1300 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta), 130W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-262-3

IRF640LPBF FAQ

1.How can I place an order for IRF640LPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF640LPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF640LPBF reliable?

The price and inventory of IRF640LPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF640LPBF is usually 5 days.

3.What payment methods are accepted for IRF640LPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF640LPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF640LPBF?

IRF640LPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF640LPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF640LPBF?

For technical support, including IRF640LPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF640LPBF requirements.

6.How does Aetrix verify that IRF640LPBF is sourced from the original manufacturer or authorized distributors?

All IRF640LPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF640LPBF meets industry standards.

7.What is the process for return or replacement of IRF640LPBF?

All IRF640LPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF640LPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF640LPBF part is unused and in its original packaging.

Return procedure for IRF640LPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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