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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF640STRL

Name: IRF640STRL
Brand: Vishay Siliconix
SKU: IRF640STRL
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF640STRL

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF640STRL.pdf

Description:: MOSFET N-CH 200V 18A D2PAK

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Product details

Overview

IRF640STRL from Vishay Siliconix is a surface-mount N-channel power MOSFET in D2PAK (TO-263) package, rated for 200 V drain-source voltage, 18 A continuous drain current at 25 °C, and 0.18 Ω R_DS(on) at V_GS = 10 V. It delivers fast switching, full avalanche ruggedness, and operates up to 150 °C junction temperature - used in DC-DC converters, motor drives, and industrial power supplies.

For engineers reviewing the IRF640STRL datasheet, IRF640STRL pinout, IRF640STRL application, or IRF640STRL equivalent, key selection criteria include its 70 nC total gate charge, 5.0 V/ns peak diode recovery dV/dt rating, 580 mJ single-pulse avalanche energy, and thermal resistance of 1.0 °C/W junction-to-case - critical for high-reliability power stage design.

Technical Context

This device belongs to Vishay's third-generation power MOSFET family optimized for high-current, high-voltage switching. Its D2PAK package enables low internal connection resistance and up to 2.0 W dissipation in surface-mount configurations, supporting high-efficiency operation in hard-switched topologies.

The IRF640STRL features fully rated avalanche capability (E_AS = 580 mJ), dynamic dV/dt immunity (5.0 V/ns), and body diode with 300–610 ns reverse recovery time and 3.4–7.1 μC Q_rr, making it suitable for inductive load switching where unclamped inductive energy must be safely absorbed.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200 V - supports 170 V DC bus designs with 15 % margin for transients
R_DS(on)	0.18 Ω @ V_GS = 10 V - limits conduction loss to ≤3.6 W at 11 A continuous current
Q_g	70 nC - determines gate drive power requirement and switching speed in PWM circuits
I_D (continuous)	18 A @ T_C = 25 °C - defines maximum steady-state current with adequate heatsinking
E_AS	580 mJ - enables robust operation under unclamped inductive switching without external snubbers
R_thJC	1.0 °C/W - allows direct thermal path to heatsink, enabling compact thermal design
V_GS(th)	2.0–4.0 V - ensures reliable turn-on with standard 10 V gate drivers, not logic-level compatible

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-terminal configuration (G, D, S); lead (Pb)-free and halogen-free per Vishay specification.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V drive signal to modulate channel conductivity; high input impedance (R_g = 0.5–3.6 Ω) minimizes driver loss
D (Drain)	High-side power terminal	Connected to exposed metal tab - serves as primary heat path and high-voltage node; electrically tied to source of integrated body diode
S (Source)	Reference and return path	Provides common reference for gate drive and current sensing; forms cathode of integral body diode

Key Features

Feature	Design Value
Surface-mount D2PAK package	Enables automated assembly and high-power density layout while maintaining 130 W power dissipation capability
Full avalanche rating	Guarantees safe operation under repetitive unclamped inductive switching (I_AR = 18 A, E_AR = 13 mJ)
Dynamic dV/dt immunity	5.0 V/ns rating prevents false turn-on during high-slew-rate voltage transients in bridge configurations
150 °C operating temperature	Supports extended thermal margin in enclosed industrial environments without derating at full current
Low-profile compatibility	Shares footprint with I2PAK variant (SiHF640L) for mechanical interchangeability in space-constrained designs

Applications

Motor Drive Inverter Stage	Industrial DC-DC Converter
Use Scenario: Half-bridge switching in 24–48 V BLDC motor controllers driving fans, pumps, or conveyors. IC Role / Device Role / Timing Role: High-side/low-side power switch handling 10–15 A peak load current with 20 kHz PWM frequency. Use Value: 0.18 Ω R_DS(on) and 70 nC Q_g enable >95 % efficiency at 12 A, while 580 mJ E_AS absorbs flyback energy during commutation.	Use Scenario: Primary-side switch in isolated 48 V input, 12 V output forward or LLC resonant converter for factory automation PLCs. IC Role / Device Role / Timing Role: Main power switch operating at 100–300 kHz with hard-switched or quasi-resonant gate drive. Use Value: 200 V rating accommodates 48 V bus with 3× transient margin; 1.0 °C/W R_thJC allows direct heatsink mounting for stable thermal performance.
UPS Output Stage	AC-DC PFC Boost Switch
Use Scenario: Output H-bridge in line-interactive UPS delivering clean 230 V AC sine wave during battery backup mode. IC Role / Device Role / Timing Role: Bidirectional switching element handling 10–12 A RMS output current with synchronous rectification support. Use Value: Fully rated avalanche capability eliminates need for external clamping diodes during grid sync transitions or overload events.	Use Scenario: Boost switch in active PFC front-end for 1 kW industrial power supply operating from universal AC input. IC Role / Device Role / Timing Role: High-voltage switching transistor conducting 8–10 A average current at 65–100 kHz. Use Value: 5.0 V/ns dV/dt immunity prevents spurious turn-on during high dv/dt across boost diode; 150 °C rating sustains reliability under sustained overload.

Motor Drive Inverter Stage

Industrial DC-DC Converter

Use Scenario: Half-bridge switching in 24–48 V BLDC motor controllers driving fans, pumps, or conveyors.

IC Role / Device Role / Timing Role: High-side/low-side power switch handling 10–15 A peak load current with 20 kHz PWM frequency.

Use Value: 0.18 Ω R_DS(on) and 70 nC Q_g enable >95 % efficiency at 12 A, while 580 mJ E_AS absorbs flyback energy during commutation.

Use Scenario: Primary-side switch in isolated 48 V input, 12 V output forward or LLC resonant converter for factory automation PLCs.

IC Role / Device Role / Timing Role: Main power switch operating at 100–300 kHz with hard-switched or quasi-resonant gate drive.

Use Value: 200 V rating accommodates 48 V bus with 3× transient margin; 1.0 °C/W R_thJC allows direct heatsink mounting for stable thermal performance.

UPS Output Stage

AC-DC PFC Boost Switch

Use Scenario: Output H-bridge in line-interactive UPS delivering clean 230 V AC sine wave during battery backup mode.

IC Role / Device Role / Timing Role: Bidirectional switching element handling 10–12 A RMS output current with synchronous rectification support.

Use Value: Fully rated avalanche capability eliminates need for external clamping diodes during grid sync transitions or overload events.

Use Scenario: Boost switch in active PFC front-end for 1 kW industrial power supply operating from universal AC input.

IC Role / Device Role / Timing Role: High-voltage switching transistor conducting 8–10 A average current at 65–100 kHz.

Use Value: 5.0 V/ns dV/dt immunity prevents spurious turn-on during high dv/dt across boost diode; 150 °C rating sustains reliability under sustained overload.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiHF640STRL-GE3	Same die, identical R_DS(on), Q_g, and avalanche specs; Pb-free/halogen-free construction vs. IRF640STRLPbF's Pb-free only	No functional difference; preferred for RoHS-compliant manufacturing with stricter halogen restrictions	Select SiHF640STRL-GE3 when full material compliance (IEC 61249-2-21) is required beyond Pb-free status
IRF640NPbF	Through-hole TO-220 package; same 200 V/18 A rating but higher R_thJA (62 °C/W vs. 40 °C/W) and no surface-mount compatibility	Requires PCB through-hole placement and manual assembly; unsuitable for automated SMT lines	Choose IRF640NPbF only for legacy through-hole designs or prototyping where thermal mass outweighs assembly constraints

Compared with IRF640STRL, SiHF640STRL-GE3 offers identical electrical performance with enhanced environmental compliance, while IRF640NPbF trades surface-mount convenience for easier heatsink attachment and lower cost in low-volume builds - both require revalidation of thermal layout and gate drive timing.

Availability

IRF640STRL is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, and high-reliability DC-DC converters requiring stable component supply across multi-year production cycles.

Supply support for IRF640STRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRF640STRL belongs to Vishay's third-generation surface-mount power MOSFET product line, engineered for high-current, high-voltage switching in space-constrained industrial power systems where ruggedness and thermal efficiency are critical.

FAQ

What is the maximum continuous drain current rating for IRF640STRL at 100 °C case temperature?

The IRF640STRL has a continuous drain current rating of 11 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package under sustained high-temperature operation and must be validated against actual board-level thermal resistance in the target application layout.

Does IRF640STRL support logic-level gate drive?

No, IRF640STRL does not support logic-level gate drive. Its gate threshold voltage range is 2.0–4.0 V, but full enhancement requires V_GS = 10 V to achieve the specified 0.18 Ω R_DS(on). Driving IRF640STRL with 3.3 V or 5 V logic signals results in significantly higher on-resistance and unacceptable conduction losses.

Is IRF640STRL RoHS-compliant?

The IRF640STRLPbF variant is lead (Pb)-free per JEDEC J-STD-609, but not halogen-free. For full RoHS + halogen-free compliance, Vishay specifies SiHF640STRL-GE3 as the equivalent part. Always verify material declarations using Vishay's official compliance documentation for IRF640STRL before final qualification.

What is the typical reverse recovery time of the body diode in IRF640STRL?

The body diode reverse recovery time (t_rr) of IRF640STRL is 300–610 ns at T_J = 25 °C, I_F = 18 A, and dI/dt = 100 A/μs. This parameter directly impacts switching losses in synchronous rectification or freewheeling paths and should be accounted for in gate drive timing and snubber design.

Can IRF640STRL replace IRF640N in an existing design?

IRF640STRL is not a direct replacement for IRF640N due to package and thermal differences: IRF640N uses TO-220, while IRF640STRL uses D2PAK. Although electrical specs align closely, the change requires PCB redesign for surface-mount layout, revised thermal interface, and validation of gate drive loop inductance - especially critical at high dI/dt.

IRF640STRL Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 18A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 180mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 70 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1300 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta), 130W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

IRF640STRL FAQ

1.How can I place an order for IRF640STRL through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF640STRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF640STRL reliable?

The price and inventory of IRF640STRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF640STRL is usually 5 days.

3.What payment methods are accepted for IRF640STRL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF640STRL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF640STRL?

IRF640STRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF640STRL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF640STRL?

For technical support, including IRF640STRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF640STRL requirements.

6.How does Aetrix verify that IRF640STRL is sourced from the original manufacturer or authorized distributors?

All IRF640STRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF640STRL meets industry standards.

7.What is the process for return or replacement of IRF640STRL?

All IRF640STRL units undergo pre-shipment inspection (PSI). If there is an issue with IRF640STRL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF640STRL part is unused and in its original packaging.

Return procedure for IRF640STRL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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