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Vishay Siliconix IRF640STRR
- Part No.:
- IRF640STRR
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRF640STRR.pdf
- Description:
- MOSFET N-CH 200V 18A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:7,443
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Product details
Overview
IRF640STRR from Vishay Siliconix is a 200 V, 18 A N-channel power MOSFET in D2PAK (TO-263) surface-mount package, featuring 0.18 Ω RDS(on) at VGS = 10 V, 70 nC total gate charge, and full avalanche rating-designed for high-current DC-DC converters, motor drives, and industrial switching power supplies.
For engineers reviewing the IRF640STRR datasheet, IRF640STRR pinout, IRF640STRR application, or IRF640STRR equivalent, key selection criteria include its 150 °C junction temperature rating, 5.0 V/ns peak diode recovery dV/dt capability, 580 mJ single-pulse avalanche energy, and compatibility with standard PCB thermal pad layouts per AN826.
Technical Context
This third-generation power MOSFET uses planar silicon technology optimized for ruggedness and fast switching. Its gate threshold voltage (2.0–4.0 V) enables direct drive from 5 V logic, while dynamic parameters-including 13 nC Qgs, 39 nC Qgd, and 51 ns rise time-support efficient hard-switched topologies up to 100 kHz.
The device integrates a low-loss body diode with 300–610 ns reverse recovery time and 3.4–7.1 μC Qrr, enabling reliable freewheeling in inductive loads. Thermal resistance of 1.0 °C/W (junction-to-case) allows 130 W continuous dissipation at TC = 25 °C when mounted on adequate copper area.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 200 V - supports input rails up to 160 V DC in offline SMPS and motor control |
| RDS(on) | 0.18 Ω @ VGS = 10 V - limits conduction loss to ≤3.6 W at 11 A continuous current |
| Qg | 70 nC - determines gate driver power requirement and switching speed trade-off |
| EAS | 580 mJ - enables unclamped inductive switching without failure under defined test conditions |
| TJ Range | −55 to +150 °C - permits operation in harsh industrial environments without derating below 100 °C |
| dV/dt Rating | 5.0 V/ns - ensures immunity to parasitic turn-on during high-speed commutation |
| PD | 130 W @ TC = 25 °C - requires ≥1"² FR-4 copper area for safe thermal management |
Pinout & Package
D2PAK (TO-263) surface-mount package with exposed drain thermal pad (pin 2), 3-pin configuration, and JEDEC-compliant outline per document 91364. Mounting requires soldering the large tab to a dedicated thermal pad per AN826 recommended footprint.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Receives 10 V drive to fully enhance; 2.0–4.0 V threshold enables TTL/CMOS compatibility |
| D (Drain) | High-side power terminal | Connected to heat sink via exposed metal tab; carries full load current and withstands 200 V transients |
| S (Source) | Reference and return path | Provides ground reference for gate drive; ties to power ground plane with low-inductance layout |
Key Features
| Feature | Design Value |
|---|---|
| Surface-mount D2PAK package | Enables automated assembly and high-power density PCB designs without through-hole drilling |
| Full avalanche rating | Guarantees survivability during unclamped inductive switching events without external snubbers |
| Dynamic dV/dt rating | Prevents false turn-on in high-di/dt circuits such as half-bridge motor drivers |
| 150 °C operating temperature | Supports sealed enclosure designs and ambient temperatures up to 85 °C with proper heatsinking |
| Low-profile thermal pad | Facilitates direct thermal coupling to internal copper planes or external heatsinks in space-constrained systems |
Applications
| Switch-Mode Power Supply | DC Motor Drive |
|---|---|
Use Scenario: Primary-side switch in 100–500 W offline flyback or forward converters with universal AC input. IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer into transformer primary winding. Use Value: 200 V rating accommodates 160 V DC bus with margin; 0.18 Ω RDS(on) minimizes conduction loss at 11 A peak current. | Use Scenario: H-bridge upper-leg switch driving brushed DC motors in industrial automation equipment. IC Role / Device Role / Timing Role: High-side N-channel MOSFET controlled by bootstrap gate driver. Use Value: 5.0 V/ns dV/dt rating prevents shoot-through during fast bridge transitions; 580 mJ EAS handles motor inductance flyback. |
| Uninterruptible Power Supply | LED Constant-Current Driver |
Use Scenario: Inverter stage switch in line-interactive UPS delivering clean 230 V AC output from battery bank. IC Role / Device Role / Timing Role: Output stage power switch in full-bridge topology converting 48 V DC to AC. Use Value: 130 W PD and 1.0 °C/W RthJC support sustained 18 A pulsed operation with active heatsinking. | Use Scenario: Buck converter switch regulating constant current to high-power LED arrays in street lighting. IC Role / Device Role / Timing Role: Main switching element in step-down regulator controlling LED string voltage. Use Value: Fast 51 ns rise time and 36 ns fall time enable >100 kHz PWM dimming with minimal switching loss. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiHF640STRR-GE3 | Same die, RoHS-compliant (Pb-free, halogen-free), identical electrical specs and D2PAK package | No functional difference; preferred for new designs requiring environmental compliance | Select SiHF640STRR-GE3 when lead-free manufacturing or REACH compliance is mandatory |
| IRF640NPbF | Same die and specs but in TO-220 through-hole package; higher RthJA (62 °C/W vs. 40 °C/W) | Requires different PCB layout and heatsink mounting; less suitable for high-density SMT production | Choose IRF640NPbF only for prototyping, low-volume builds, or legacy through-hole systems |
Compared with IRF640STRR, SiHF640STRR-GE3 offers identical performance with enhanced environmental compliance, while IRF640NPbF trades surface-mount efficiency for mechanical robustness and ease of manual assembly-making IRF640STRR optimal for volume SMT power conversion where thermal and layout density are critical.
Availability
IRF640STRR is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, and high-reliability DC-DC converters requiring stable component supply across multi-year production cycles.
Supply support for IRF640STRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.
The IRF640STRR belongs to Vishay's third-generation power MOSFET product line, engineered specifically for rugged, high-efficiency switching in industrial, computing, and telecom power systems where reliability under repetitive stress is essential.
FAQ
What is the maximum continuous drain current for IRF640STRR at 100 °C case temperature?
The IRF640STRR supports 11 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating from 18 A at 25 °C reflects thermal limitations of the D2PAK package and must be validated against actual board-level thermal resistance and ambient conditions in the final design.
Does IRF640STRR have a built-in body diode, and what are its key recovery characteristics?
Yes, IRF640STRR includes an integral body diode rated for 18 A continuous and 72 A pulsed source-drain current. Its reverse recovery time is 300–610 ns at TJ = 25 °C, with Qrr of 3.4–7.1 μC-critical for minimizing switching loss and voltage overshoot in freewheeling paths of buck or half-bridge topologies.
Is IRF640STRR RoHS-compliant, and what does the "PbF" suffix indicate?
The IRF640STRR part number corresponds to the lead-free (PbF) version per Vishay's ordering nomenclature. It meets RoHS Directive 2011/65/EU requirements, with Pb-free terminations and halogen-free molding compound-confirmed in the ordering information table and material categorization note in document 91037.
What is the gate threshold voltage range for IRF640STRR, and how does it affect drive circuit design?
The IRF640STRR has a gate threshold voltage (VGS(th)) range of 2.0–4.0 V at ID = 250 μA. This allows direct interface with 5 V logic but requires sufficient gate drive strength to ensure full enhancement-especially at elevated temperatures where VGS(th) increases-so gate resistors and driver current capability must be selected accordingly.
Can IRF640STRR replace IRF640N in existing designs, and what are the key mechanical differences?
IRF640STRR is not a drop-in replacement for IRF640N due to differing packages: IRF640STRR uses D2PAK (TO-263), while IRF640N uses TO-220. Though electrically identical, the D2PAK requires a thermal pad footprint per AN826 and cannot be mounted on the same PCB land pattern-requiring layout revision and requalification of thermal performance.
IRF640STRR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 200 V
- Current - Continuous Drain (Id) @ 25°C:
- 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 180mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 70 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1300 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.1W (Ta), 130W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
IRF640STRR FAQ
1.How can I place an order for IRF640STRR through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF640STRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF640STRR reliable?
The price and inventory of IRF640STRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF640STRR is usually 5 days.
3.What payment methods are accepted for IRF640STRR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF640STRR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF640STRR?
IRF640STRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF640STRR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF640STRR?
For technical support, including IRF640STRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF640STRR requirements.
6.How does Aetrix verify that IRF640STRR is sourced from the original manufacturer or authorized distributors?
All IRF640STRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF640STRR meets industry standards.
7.What is the process for return or replacement of IRF640STRR?
All IRF640STRR units undergo pre-shipment inspection (PSI). If there is an issue with IRF640STRR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF640STRR part is unused and in its original packaging.
Return procedure for IRF640STRR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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