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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF644N

Name: IRF644N
Brand: Vishay Siliconix
SKU: IRF644N
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF644N

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRF644N.pdf

Description:: MOSFET N-CH 250V 14A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF644N from Vishay Siliconix is a 250 V, 14 A N-channel enhancement-mode Power MOSFET in TO-220 package, featuring 0.240 Ω R_DS(on) at V_GS = 10 V, 54 nC total gate charge, and 175 °C maximum junction temperature - used in switch-mode power supplies, motor controls, and DC-DC converters.

For engineers reviewing the IRF644N datasheet, IRF644N pinout, IRF644N application, or IRF644N equivalent, key selection criteria include avalanche ruggedness (180 mJ single-pulse E_AS), dV/dt immunity (7.9 V/ns), and thermal performance (R_thJC = 1.0 °C/W) for high-reliability industrial switching designs.

Technical Context

The IRF644N employs fifth-generation silicon process technology to achieve low on-resistance per die area while maintaining fast switching (t_d(on) = 10 ns, t_f = 17 ns) and robust unclamped inductive switching capability. Its gate threshold voltage (2.0–4.0 V) supports standard 10 V logic-level drive without requiring level-shifting circuitry.

Designed for hard-switched topologies, it integrates a fast-recovery body diode (t_rr = 165–250 ns, Q_rr = 1.0–1.6 µC) and exhibits dynamic dV/dt rating up to 7.9 V/ns - enabling stable operation in noisy high-di/dt environments such as flyback snubbers and half-bridge inverters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	250 V - supports input voltages up to 200 V DC with margin for transient spikes in offline SMPS
R_DS(on)	0.240 Ω @ V_GS = 10 V - enables <1.5 W conduction loss at 8.4 A continuous drain current
Q_g	54 nC - determines gate driver power requirement and switching transition time in hard-switched circuits
E_AS	180 mJ - specifies maximum single-pulse inductive energy the device can absorb without failure
T_J(max)	175 °C - allows operation in sealed enclosures or high-ambient industrial environments with proper heatsinking
dV/dt Rating	7.9 V/ns - ensures immunity to false turn-on during high-speed voltage transients across drain-source
I_D(cont)	14 A @ T_C = 25 °C - defines maximum continuous current under ideal case-cooling conditions

Pinout & Package

IRF644N is housed in a through-hole TO-220AB package with isolated tab (drain-connected), offering low thermal resistance (R_thJC = 1.0 °C/W) and mechanical robustness for manual or wave-solder assembly.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Receives 10 V logic-level signal to fully enhance channel; requires ≤54 nC charge for full turn-on
D (Drain)	High-side power output	Connected to heatsink via isolated tab; carries full load current and withstands 250 V blocking
S (Source)	Power return / reference node	Serves as common return path for load current and gate drive reference; body diode anode

Key Features

Feature	Design Value
Fully avalanche rated	Withstands 180 mJ single-pulse unclamped inductive energy without degradation - eliminates need for external snubbers in relay-driving or solenoid-control applications
Dynamic dV/dt rating	7.9 V/ns immunity prevents spurious turn-on during fast voltage transients - critical for half-bridge leg stability
175 °C operating temperature	Enables reliable operation in sealed industrial enclosures or high-ambient environments when mounted on ≥1.0 °C/W heatsink
Low Q_gd/Q_g ratio	26/54 ≈ 48 % - improves Miller immunity and reduces risk of shoot-through in synchronous rectifiers
Fast body diode recovery	t_rr = 165–250 ns with Q_rr = 1.0–1.6 µC - minimizes reverse recovery losses in freewheeling paths of buck converters

Applications

Switch-Mode Power Supply (SMPS)	DC Motor Control
Use Scenario: Primary-side switching transistor in 100–200 W offline flyback or forward converter. IC Role / Device Role / Timing Role: High-voltage N-channel power switch driven by PWM controller IC (e.g., UC384x) at 50–100 kHz. Use Value: 0.240 Ω R_DS(on) limits conduction loss to <1.5 W at 8.4 A; 180 mJ E_AS absorbs leakage inductance energy during MOSFET turn-off.	Use Scenario: H-bridge high-side switch for 24–48 V brushed DC motor control in industrial actuators. IC Role / Device Role / Timing Role: Power stage switch controlled by isolated gate driver (e.g., Si823x) with 10 V gate bias. Use Value: 250 V V_DS provides margin against back-EMF spikes; 7.9 V/ns dV/dt rating prevents false triggering during rapid polarity reversal.
Inductive Load Switching	Uninterruptible Power Supply (UPS)
Use Scenario: Solid-state relay replacement for 120 V AC solenoid or contactor control in PLC output modules. IC Role / Device Role / Timing Role: Zero-crossing synchronized switch using optocoupler-isolated gate drive. Use Value: Fully avalanche-rated structure tolerates inductive kickback without clamping diodes; TO-220 package enables direct heatsink mounting in DIN-rail enclosures.	Use Scenario: Inverter-stage switching device in line-interactive UPS delivering 500–1000 VA output. IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration driving transformer primary at 20–50 kHz. Use Value: Fast body diode (t_rr < 250 ns) reduces cross-conduction losses during dead-time; 14 A I_D supports peak loads up to 1.2× rated VA.

Switch-Mode Power Supply (SMPS)

DC Motor Control

Use Scenario: Primary-side switching transistor in 100–200 W offline flyback or forward converter.

IC Role / Device Role / Timing Role: High-voltage N-channel power switch driven by PWM controller IC (e.g., UC384x) at 50–100 kHz.

Use Value: 0.240 Ω R_DS(on) limits conduction loss to <1.5 W at 8.4 A; 180 mJ E_AS absorbs leakage inductance energy during MOSFET turn-off.

Use Scenario: H-bridge high-side switch for 24–48 V brushed DC motor control in industrial actuators.

IC Role / Device Role / Timing Role: Power stage switch controlled by isolated gate driver (e.g., Si823x) with 10 V gate bias.

Use Value: 250 V V_DS provides margin against back-EMF spikes; 7.9 V/ns dV/dt rating prevents false triggering during rapid polarity reversal.

Inductive Load Switching

Uninterruptible Power Supply (UPS)

Use Scenario: Solid-state relay replacement for 120 V AC solenoid or contactor control in PLC output modules.

IC Role / Device Role / Timing Role: Zero-crossing synchronized switch using optocoupler-isolated gate drive.

Use Value: Fully avalanche-rated structure tolerates inductive kickback without clamping diodes; TO-220 package enables direct heatsink mounting in DIN-rail enclosures.

Use Scenario: Inverter-stage switching device in line-interactive UPS delivering 500–1000 VA output.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration driving transformer primary at 20–50 kHz.

Use Value: Fast body diode (t_rr < 250 ns) reduces cross-conduction losses during dead-time; 14 A I_D supports peak loads up to 1.2× rated VA.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP20NM50FP	500 V V_DS, 20 A I_D, 0.23 Ω R_DS(on), TO-220FP package (full-pack, no isolated tab)	Higher voltage rating but non-isolated drain; requires insulated mounting hardware	Preferred where higher blocking voltage is needed and PCB layout permits non-isolated heatsinking
IRFZ44NPBF	55 V V_DS, 49 A I_D, 0.028 Ω R_DS(on), same TO-220 package	Lower voltage, much lower R_DS(on); not suitable for >60 V bus applications	Select only for low-voltage, high-current DC systems (e.g., battery-powered motor drives)

Compared with STP20NM50FP and IRFZ44NPBF, the IRF644N offers optimal balance of 250 V rating, proven avalanche ruggedness, and TO-220 isolation - making it uniquely suited for 100–200 V industrial switching where reliability under inductive stress is critical.

Availability

IRF644N is available at Aetrix Electronics and suitable for switch-mode power supplies, DC motor controllers, inductive load drivers, and uninterruptible power supplies requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRF644N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRF644N belongs to Vishay's fifth-generation Power MOSFET product line, engineered for high-efficiency, high-ruggedness switching in commercial and industrial power conversion systems.

FAQ

What is the maximum continuous drain current rating for the IRF644N at 100 °C case temperature?

The IRF644N has a continuous drain current rating of 9.9 A at T_C = 100 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220 package under real-world heatsink conditions. The IRF644N must be mounted on a heatsink capable of maintaining case temperature ≤100 °C to sustain this current continuously.

Does the IRF644N have a fully isolated drain tab in the TO-220 package?

Yes, the IRF644N uses the TO-220AB variant with electrically isolated drain tab - confirmed by Vishay's package drawings and ordering information. This allows direct mounting to a common heatsink without additional insulating hardware, simplifying thermal design in multi-device power stages.

What is the typical gate threshold voltage range for the IRF644N, and how does it affect drive requirements?

The IRF644N has a gate threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V at I_D = 250 µA. This ensures reliable turn-on with standard 5 V or 10 V logic-level drivers. Because the IRF644N is not a logic-level MOSFET, full enhancement requires V_GS ≥ 10 V to achieve its specified 0.240 Ω R_DS(on).

Can the IRF644N be paralleled with identical units for higher current handling?

Yes, the IRF644N is explicitly designed for ease of paralleling, as stated in its Features list. Its positive R_DS(on) temperature coefficient ensures current sharing stability across multiple devices. For reliable parallel operation, the IRF644N requires matched gate drive impedance and symmetrical PCB layout to minimize loop inductance imbalance.

Is the IRF644N RoHS-compliant, and what is its lead-free part number?

The IRF644N is SnPb-terminated and not RoHS-compliant. Its lead-free equivalent is IRF644NPbF, which shares identical electrical specifications and TO-220 packaging but uses matte tin plating. Both versions are manufactured by Vishay Siliconix and documented in the same datasheet (Document Number 91038).

IRF644N Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 250 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 240mOhm @ 8.4A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 54 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1060 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 150W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRF644N FAQ

1.How can I place an order for IRF644N through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF644N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF644N reliable?

The price and inventory of IRF644N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF644N is usually 5 days.

3.What payment methods are accepted for IRF644N?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF644N transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF644N?

IRF644N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF644N order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF644N?

For technical support, including IRF644N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF644N requirements.

6.How does Aetrix verify that IRF644N is sourced from the original manufacturer or authorized distributors?

All IRF644N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF644N meets industry standards.

7.What is the process for return or replacement of IRF644N?

All IRF644N units undergo pre-shipment inspection (PSI). If there is an issue with IRF644N, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF644N part is unused and in its original packaging.

Return procedure for IRF644N:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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