Vishay Siliconix IRF644NLPBF
- Part No.:
- IRF644NLPBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Datasheet:
-
IRF644NLPBF.pdf
- Description:
- MOSFET N-CH 250V 14A I2PAK
- Quantity:
- Payment:

- Shipping:

Inventory:4,608
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Product details
Overview
IRF644NLPBF from Vishay Siliconix is a 250 V, 14 A N-channel power MOSFET in TO-220AB package with 0.240 Ω RDS(on) at VGS = 10 V, 54 nC total gate charge, and 175 °C maximum junction temperature - designed for high-efficiency switch-mode power supplies, motor drives, and DC-DC converters.
For engineers reviewing the IRF644NLPBF datasheet, IRF644NLPBF pinout, IRF644NLPBF application, or IRF644NLPBF equivalent, key selection criteria include avalanche ruggedness (180 mJ single-pulse), fast switching (10 ns turn-on delay), dynamic dV/dt rating (7.9 V/ns), and lead-free RoHS-compliant packaging.
Technical Context
This fifth-generation Power MOSFET uses advanced silicon processing to achieve low on-resistance per die area while maintaining robust avalanche capability and thermal stability up to 175 °C. Its gate threshold voltage (2.0–4.0 V) and low input capacitance (1060 pF Ciss) support simple drive requirements and ease of paralleling.
The device integrates a fast-recovery body diode (trr = 165–250 ns, Qrr = 1.0–1.6 µC) and exhibits linear derating (1.0 W/°C above 25 °C case temperature). Thermal resistance from junction-to-case is 1.0 °C/W, enabling high-power dissipation (150 W at TC = 25 °C) in standard heatsink-mounted configurations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 250 V - supports primary-side switching in offline SMPS up to 230 VAC mains with safety margin. |
| RDS(on) | 0.240 Ω at VGS = 10 V - limits conduction loss to ≤2.8 W at 10 A continuous drain current. |
| Qg | 54 nC - determines gate drive power requirement and switching speed in hard-switched topologies. |
| EAS | 180 mJ (single-pulse) - enables reliable unclamped inductive switching without external snubbers. |
| tr/tf | 21 ns / 17 ns - reduces switching transition losses and EMI generation in high-frequency converters. |
| TJ(max) | 175 °C - allows operation in thermally constrained industrial environments without derating penalties. |
Pinout & Package
IRF644NLPBF is housed in a through-hole TO-220AB package with isolated tab (drain-connected), offering low thermal resistance (RthJC = 1.0 °C/W) and mechanical robustness for manual or automated assembly.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | High-side power output node | Electrically connected to metal tab; requires insulating washer when mounted to grounded heatsink. |
| Gate | Control input | Receives 10 V logic-level drive; 2.0–4.0 V threshold enables compatibility with standard PWM controllers. |
| Source | Power return/reference node | Serves as common reference for gate drive and load current return; connects to ground or low-side switch node. |
Key Features
| Feature | Design Value |
|---|---|
| Fully avalanche rated | 180 mJ single-pulse energy handling eliminates need for external clamping circuits in inductive loads. |
| Dynamic dV/dt rating | 7.9 V/ns immunity prevents false turn-on during high-slew-rate voltage transients in bridge configurations. |
| Lead (Pb)-free construction | RoHS-compliant termination meets IPC-J-STD-020 moisture sensitivity level 1 (MSL-1) for reflow compatibility. |
| Fast switching performance | 10 ns turn-on delay + 21 ns rise time enables >500 kHz operation in resonant and hard-switched topologies. |
| Body diode recovery | 165–250 ns reverse recovery time with 1.0–1.6 µC Qrr supports synchronous rectification in LLC and phase-shifted full-bridge designs. |
Applications
| Switch-Mode Power Supply | Motor Drive Inverter |
|---|---|
Use Scenario: Primary-side switching in 100–300 W offline AC/DC adapters and open-frame PSUs. IC Role / Device Role / Timing Role: High-voltage N-channel power switch in flyback or forward converter topology. Use Value: 250 V VDS and 175 °C TJ(max) ensure reliability across universal input ranges and ambient temperatures up to 70 °C. |
Use Scenario: Half-bridge leg in 24–48 V BLDC motor drives for HVAC blowers and industrial fans. IC Role / Device Role / Timing Role: Low-side switching element with fast body diode recovery for commutation current freewheeling. Use Value: 14 A continuous current and 54 nC Qg enable efficient PWM control at 20–40 kHz with minimal gate drive loss. |
| DC-DC Converter | Lighting Ballast |
Use Scenario: Step-down (buck) regulator in 12 V–48 V industrial power distribution systems. IC Role / Device Role / Timing Role: Synchronous rectifier or high-side switch in isolated/non-isolated buck-derived topologies. Use Value: 0.240 Ω RDS(on) reduces conduction loss to <1.5 W at 8 A, improving efficiency over discrete diode solutions. |
Use Scenario: Resonant switching in electronic CFL and LED driver ballasts requiring high-voltage hold-off. IC Role / Device Role / Timing Role: Resonant tank switch in series-resonant or LCC configurations operating near zero-voltage switching. Use Value: Avalanche ruggedness and 7.9 V/ns dV/dt rating prevent failure during resonant voltage overshoots and lamp ignition events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP20NM50FP | 500 V VDS, 20 A ID, 0.27 Ω RDS(on), TO-220FP package (full-pack, insulated tab) | Higher voltage rating suits 400 V bus applications; higher RDS(on) increases conduction loss at same current | Choose STP20NM50FP when isolation from heatsink is required without external insulator, or when 500 V blocking is mandatory. |
| IXTP12N25P | 250 V VDS, 12 A ID, 0.28 Ω RDS(on), TO-220 package, lower Qg (32 nC) | Lower gate charge improves high-frequency switching efficiency but reduces peak current capability | Choose IXTP12N25P where gate drive power budget is tight and 12 A continuous current suffices. |
Compared with STP20NM50FP and IXTP12N25P, IRF644NLPBF delivers optimal balance of 250 V rating, 14 A current, 0.240 Ω on-resistance, and 180 mJ avalanche energy - making it preferred for cost-sensitive, thermally demanding 100–300 W industrial power stages where full 500 V headroom is unnecessary.
Availability
IRF644NLPBF is available at Aetrix Electronics and suitable for switch-mode power supplies, motor drive inverters, and DC-DC converters requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.
Supply support for IRF644NLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, thermal performance, and reliability.
The IRF644NLPBF belongs to Vishay's fifth-generation Power MOSFET family, engineered for high-efficiency, high-reliability switching in industrial, computing, and consumer power conversion systems.
FAQ
What is the maximum continuous drain current for IRF644NLPBF at 100 °C case temperature?
The IRF644NLPBF supports 9.9 A continuous drain current at TC = 100 °C, as specified in its Absolute Maximum Ratings table. This derated value ensures safe operation under sustained thermal stress and aligns with its 1.0 W/°C linear derating factor above 25 °C. The IRF644NLPBF maintains stable RDS(on) performance across this range due to its normalized on-resistance curve.
Is IRF644NLPBF suitable for avalanche operation, and what is its single-pulse energy rating?
Yes, IRF644NLPBF is fully avalanche rated with a single-pulse avalanche energy (EAS) of 180 mJ at TJ = 25 °C, tested under standardized unclamped inductive conditions (L = 5.0 µH, IAS = 8.4 A). This rating allows the IRF644NLPBF to safely absorb inductive energy without external protection in flyback, boost, and motor drive circuits.
Does IRF644NLPBF have a RoHS-compliant lead-free finish?
Yes, IRF644NLPBF carries the "PbF" suffix indicating lead-free terminations and full RoHS compliance per Directive 2011/65/EU. Its matte tin plating meets JEDEC J-STD-020 MSL-1 requirements and is compatible with standard SnPb and lead-free reflow profiles without solderability degradation.
What is the gate threshold voltage range for IRF644NLPBF, and how does it affect drive requirements?
The IRF644NLPBF has a gate threshold voltage (VGS(th)) range of 2.0 V to 4.0 V at ID = 250 µA. This allows reliable turn-on with 5 V logic-level drivers but recommends 10 V gate drive for full enhancement and minimal RDS(on). The IRF644NLPBF's low gate charge (54 nC) further simplifies drive circuit design compared to higher-Qg alternatives.
How does the body diode performance of IRF644NLPBF compare to standard FRDs in power supply designs?
The IRF644NLPBF features an integrated body diode with trr = 165–250 ns and Qrr = 1.0–1.6 µC at TJ = 25 °C, outperforming many discrete FRDs in softness and recovery consistency. In flyback and LLC converters, this enables reduced snubber losses and lower EMI - though for ultra-high-frequency designs, a dedicated SiC Schottky may still be preferred over the IRF644NLPBF's body diode.
IRF644NLPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 250 V
- Current - Continuous Drain (Id) @ 25°C:
- 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 240mOhm @ 8.4A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 54 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1060 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 150W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- I2PAK
IRF644NLPBF FAQ
1.How can I place an order for IRF644NLPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF644NLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF644NLPBF reliable?
The price and inventory of IRF644NLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF644NLPBF is usually 5 days.
3.What payment methods are accepted for IRF644NLPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF644NLPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF644NLPBF?
IRF644NLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF644NLPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF644NLPBF?
For technical support, including IRF644NLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF644NLPBF requirements.
6.How does Aetrix verify that IRF644NLPBF is sourced from the original manufacturer or authorized distributors?
All IRF644NLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF644NLPBF meets industry standards.
7.What is the process for return or replacement of IRF644NLPBF?
All IRF644NLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF644NLPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF644NLPBF part is unused and in its original packaging.
Return procedure for IRF644NLPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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