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Vishay Siliconix IRF644NS
- Part No.:
- IRF644NS
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRF644NS.pdf
- Description:
- MOSFET N-CH 250V 14A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:9,121
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Product details
Overview
IRF644NS from Vishay Siliconix is a 250 V, 14 A N-channel power MOSFET in D2PAK (TO-263) package, featuring 0.240 Ω RDS(on) at VGS = 10 V, 54 nC total gate charge, and 175 °C maximum junction temperature. It delivers rugged avalanche capability (180 mJ single-pulse), fast switching (10 ns turn-on delay), and is optimized for high-current DC-DC converters and motor control circuits.
For engineers reviewing the IRF644NS datasheet, IRF644NS pinout, IRF644NS application, or IRF644NS equivalent, this page provides verified package mapping (D2PAK), validated thermal performance (RthJC = 1.0 °C/W), confirmed avalanche rating (EAS = 180 mJ), and real-world design implications of its 7.9 V/ns dV/dt immunity and body diode recovery time (trr = 165–250 ns).
Technical Context
This N-channel enhancement-mode MOSFET uses fifth-generation silicon process technology to achieve low on-resistance per die area while maintaining robust unclamped inductive switching capability. Its gate threshold voltage (2.0–4.0 V) and low input capacitance (Ciss = 1060 pF) support simple drive requirements with standard 10 V logic-level gate drivers.
The device integrates a fast-recovery body diode (trr = 165–250 ns, Qrr = 1.0–1.6 µC) and exhibits linear derating (1.0 W/°C) above 25 °C case temperature. Its D2PAK package enables surface-mount high-power operation up to 2.0 W in typical PCB mount configurations, with low internal connection resistance supporting high pulsed current (IDM = 56 A).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 250 V - supports 200 V bus designs with 25 % safety margin against transients |
| RDS(on) | 0.240 Ω @ VGS = 10 V - enables ≤3.4 W conduction loss at 12 A continuous drain current |
| Qg | 54 nC - determines gate driver power requirement (~540 µC total charge per 10 kHz switching cycle) |
| EAS | 180 mJ - allows reliable unclamped inductive switching in motor drives without external snubbers |
| tr/tf | 21 ns / 17 ns - minimizes switching transition losses in hard-switched topologies |
| TJ(max) | +175 °C - permits operation in sealed industrial enclosures with limited airflow |
| dV/dt | 7.9 V/ns - resists false turn-on during high dv/dt noise in half-bridge configurations |
Pinout & Package
D2PAK (TO-263) package: surface-mount, isolated tab (drain), 3-pin configuration with 2.54 mm lead pitch and 10.67 mm × 9.65 mm footprint. Thermal pad soldered to PCB copper for enhanced heat dissipation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (G) | Gate | Control terminal; requires ≤±20 V gate-source voltage; low Ciss (1060 pF) eases drive design |
| Pin 2 (D) | Drain | Main power output terminal; electrically connected to exposed thermal pad; handles 250 V max blocking |
| Pin 3 (S) | Source | Power return path and gate reference; internal source inductance (LS = 7.5 nH) affects high-speed switching ringing |
Key Features
| Feature | Design Value |
|---|---|
| Fully avalanche rated | 180 mJ single-pulse energy withstand enables robustness in inductive load switching without external protection |
| Dynamic dV/dt rating | 7.9 V/ns immunity prevents spurious turn-on in high-noise bridge circuits and motor drives |
| Low RDS(on) × Qg figure-of-merit | 12.96 Ω·nC - balances conduction and switching losses for medium-frequency SMPS (≤100 kHz) |
| Fast body diode recovery | trr = 165–250 ns with Qrr = 1.0–1.6 µC reduces reverse recovery losses in synchronous rectification |
| 175 °C operating temperature | Supports full-rated current in thermally constrained environments such as enclosed power supplies and automotive under-hood modules |
Applications
| DC-DC Converters | Motor Drives |
|---|---|
|
Use Scenario: Step-down (buck) converter in industrial PLC power supplies delivering 24 V/10 A output from 200 V DC bus. IC Role / Device Role / Timing Role: High-side main switch handling 100 kHz PWM with 50 % duty cycle and 56 A peak pulsed current. Use Value: Low RDS(on) (0.240 Ω) limits conduction loss to 24 W at 10 A, while 180 mJ EAS absorbs leakage inductance energy during freewheeling. |
Use Scenario: Half-bridge driver for 120 W BLDC fan in HVAC systems, operating at 15 kHz PWM with 12 A RMS phase current. IC Role / Device Role / Timing Role: Low-side switching element with fast tf (17 ns) minimizing shoot-through risk during dead-time transitions. Use Value: Body diode trr (165–250 ns) and Qrr (1.0–1.6 µC) reduce cross-conduction losses and EMI during commutation. |
| Uninterruptible Power Supplies | Industrial Lighting Ballasts |
|
Use Scenario: Inverter stage in 1 kVA online UPS converting 380 V DC bus to 230 V AC output using full-bridge topology. IC Role / Device Role / Timing Role: Output switch subjected to repetitive avalanche stress during battery-mode transfer transients. Use Value: Repetitive avalanche rating (EAR = 15 mJ) and 175 °C TJ(max) ensure reliability across 10,000+ transfer cycles without derating. |
Use Scenario: Resonant half-bridge controller in 250 W LED streetlight driver, operating at 70 kHz with zero-voltage switching. IC Role / Device Role / Timing Role: High-efficiency switching element where low Coss (140 pF) and Crss (38 pF) minimize capacitive turn-off losses. Use Value: Ciss/Coss ratio of ~7.6 supports stable ZVS initiation across line/load variations without auxiliary circuits. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP20NM50FP | 500 V VDS, 0.27 Ω RDS(on), TO-220FP package, lower Qg (45 nC) | Better voltage margin but higher conduction loss; requires through-hole mounting | Select when 500 V bus isolation is required and board space allows through-hole assembly |
| IXTP12N50D2 | 500 V VDS, 0.55 Ω RDS(on), TO-220 package, 100% avalanche rated, 200 °C TJ(max) | Higher RDS(on) increases conduction loss; superior thermal robustness for extreme ambient conditions | Prefer for aerospace or military applications where extended temperature range and guaranteed avalanche endurance outweigh efficiency needs |
Compared with STP20NM50FP and IXTP12N50D2, the IRF644NS offers optimal balance of 250 V rating, low RDS(on), surface-mount D2PAK packaging, and proven 180 mJ avalanche capability-making it ideal for cost-sensitive, high-volume industrial power stages where 200 V bus operation is standard.
Availability
IRF644NS is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, uninterruptible power supplies, and industrial lighting ballasts requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.
Supply support for IRF644NS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with over 50 years of manufacturing heritage and AEC-Q101 qualified processes.
The IRF644NS belongs to Vishay's fifth-generation Power MOSFET family, engineered specifically for high-current, medium-voltage industrial switching applications demanding ruggedness, thermal stability, and surface-mount scalability.
FAQ
What is the maximum continuous drain current for the IRF644NS at 100 °C case temperature?
The IRF644NS supports 9.9 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package and ensures safe operation within its 1.0 °C/W junction-to-case thermal resistance. The IRF644NS maintains full 14 A rating only at TC = 25 °C, with linear derating applied above that point.
Does the IRF644NS have a fully rated avalanche capability, and what is its single-pulse energy limit?
Yes, the IRF644NS is fully avalanche rated with a single-pulse avalanche energy (EAS) of 180 mJ, tested under standardized conditions (L = 5.0 µH, IAS = 8.4 A, TJ starting at 25 °C). This rating is confirmed in the Absolute Maximum Ratings section and enables reliable operation in inductive switching applications without external clamping components. The IRF644NS also supports 15 mJ repetitive avalanche energy.
What is the gate threshold voltage range for the IRF644NS, and how does it affect drive circuit design?
The IRF644NS has a gate threshold voltage (VGS(th)) range of 2.0 V to 4.0 V at ID = 250 µA, meaning it begins conducting significantly between those voltages. For full enhancement and low RDS(on), a minimum VGS of 10 V is required. This necessitates a gate driver capable of delivering ≥10 V swing with sufficient peak current to charge its 54 nC total gate charge rapidly. The IRF644NS is not a logic-level MOSFET and requires dedicated level-shifting or gate-drive ICs in 3.3 V or 5 V control systems.
Can the IRF644NS be used in parallel configurations, and what design considerations apply?
Yes, the IRF644NS is designed for ease of paralleling, as stated in its official features list. Key enablers include positive temperature coefficient of RDS(on) (which promotes current sharing) and low gate charge variation across units. Successful parallel operation requires matched gate resistors (RG), symmetrical PCB layout to minimize loop inductance, and individual source resistors for dynamic current balancing. The IRF644NS datasheet confirms this capability without requiring external current-sense feedback.
What is the body diode reverse recovery time and charge for the IRF644NS, and why do they matter in bridge topologies?
The IRF644NS body diode exhibits reverse recovery time (trr) of 165–250 ns and reverse recovery charge (Qrr) of 1.0–1.6 µC at TJ = 25 °C, IF = 14 A, and dI/dt = 100 A/µs. These parameters directly impact switching losses and EMI in half-bridge and full-bridge circuits during freewheeling transitions. Lower Qrr reduces tail current and associated heat generation, while tight trr distribution improves timing predictability-both critical for reliable IRF644NS operation in motor control and resonant converters.
IRF644NS Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 250 V
- Current - Continuous Drain (Id) @ 25°C:
- 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 240mOhm @ 8.4A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 54 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1060 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 150W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
IRF644NS FAQ
1.How can I place an order for IRF644NS through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF644NS on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF644NS reliable?
The price and inventory of IRF644NS are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF644NS is usually 5 days.
3.What payment methods are accepted for IRF644NS?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF644NS transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF644NS?
IRF644NS orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF644NS order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF644NS?
For technical support, including IRF644NS datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF644NS requirements.
6.How does Aetrix verify that IRF644NS is sourced from the original manufacturer or authorized distributors?
All IRF644NS products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF644NS meets industry standards.
7.What is the process for return or replacement of IRF644NS?
All IRF644NS units undergo pre-shipment inspection (PSI). If there is an issue with IRF644NS, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF644NS part is unused and in its original packaging.
Return procedure for IRF644NS:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRF644NS Tags
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