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Vishay Siliconix IRF644NSPBF

Part No.:
IRF644NSPBF
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixIRF644NSPBF.pdf
Description:
MOSFET N-CH 250V 14A D2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,343

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Product details

Overview

IRF644NSPBF from Vishay Siliconix is a 250 V, 14 A N-channel power MOSFET in D2PAK (TO-263) package, with RDS(on) = 0.240 Ω at VGS = 10 V, Qg = 54 nC, and 175 °C maximum junction temperature. It delivers high-current switching in DC-DC converters, motor drives, and industrial power supplies.

For engineers reviewing the IRF644NSPBF datasheet, IRF644NSPBF pinout, IRF644NSPBF application, or IRF644NSPBF equivalent, key selection criteria include avalanche energy rating (EAS = 180 mJ), dV/dt capability (7.9 V/ns), body diode recovery time (trr = 165–250 ns), and RoHS-compliant lead-free construction.

Technical Context

This fifth-generation Power MOSFET uses advanced silicon processing to minimize on-resistance per die area while maintaining rugged unclamped inductive switching performance. Its fully avalanche-rated design supports repetitive EAR = 15 mJ and single-pulse EAS = 180 mJ under defined test conditions.

The device features low gate charge (Qg = 54 nC, Qgd = 26 nC) and fast switching (td(on) = 10 ns, tf = 17 ns), enabling high-frequency operation in hard-switched topologies. Internal source/drain inductance (LS = 7.5 nH, LD = 4.5 nH) is specified for layout-aware design.

Key Specifications

ParameterValue and Actual Design Meaning
VDS250 V - supports 200 V bus designs with 25 % voltage margin
RDS(on)0.240 Ω @ VGS = 10 V - enables ≤3.4 W conduction loss at 12 A
ID (continuous)14 A @ TC = 25 °C - requires heatsinking above ~60 °C case temperature
Qg54 nC - determines gate drive power and switching speed in 100–500 kHz applications
EAS180 mJ - allows safe operation during unclamped inductive turn-off events
trr165–250 ns - impacts snubber sizing and cross-conduction risk in bridge circuits
TJ(max)175 °C - enables high-temperature industrial environments without derating penalty

Pinout & Package

D2PAK (TO-263) package: surface-mount, isolated drain tab, 3-pin configuration with exposed metal pad for thermal and electrical connection to PCB ground plane.

Pin/TerminalCircuit RoleDesign Meaning
G (Gate)Control inputReceives 10 V logic-level drive; threshold VGS(th) = 2.0–4.0 V; ±20 V absolute max rating
D (Drain)High-side power outputConnected to exposed drain tab; handles full 250 V blocking and 14 A current path
S (Source)Power return / referenceCommon node for gate drive return and load current return; internal source inductance = 7.5 nH

Key Features

FeatureDesign Value
Fully avalanche ratedSingle-pulse EAS = 180 mJ ensures robustness against inductive switching faults without external clamping
Dynamic dV/dt rating7.9 V/ns immunity prevents false turn-on in high-noise half-bridge or phase-leg configurations
Low Qgd/Qg ratio26/54 = 0.48 reduces Miller-induced switching delay and improves controllability in high-speed PWM
175 °C operating temperatureEnables use in sealed enclosures or high-ambient environments without thermal derating penalties
Lead (Pb)-free RoHS compliantMeets IPC/JEDEC J-STD-020D reflow profile; compatible with standard Pb-free assembly processes

Applications

Motor Drive InverterDC-DC Boost Converter

Use Scenario: 3-phase BLDC motor control in HVAC blowers and industrial pumps operating at 48–100 V DC bus.

IC Role / Device Role / Timing Role: High-side N-channel switch in 6-pack inverter stage; commutated at 10–20 kHz with dead-time control.

Use Value: Low RDS(on) minimizes I²R losses at 12 A peak; fast tf = 17 ns reduces switching transition overlap loss.

Use Scenario: Isolated telecom power supply boosting 48 V input to 380 V intermediate bus for downstream AC/DC conversion.

IC Role / Device Role / Timing Role: Primary-side switching element in hard-switched boost PFC stage operating at 100 kHz.

Use Value: Avalanche rating absorbs leakage inductance energy; 250 V VDS provides headroom over 380 V bus transients.

Industrial UPS Output StageAC Solid-State Relay

Use Scenario: Bidirectional output H-bridge in 1 kVA online UPS delivering clean 230 V AC sine wave under battery backup.

IC Role / Device Role / Timing Role: Synchronous rectifier and inverter switch; operated in 50 Hz line-frequency PWM with zero-voltage switching assist.

Use Value: Body diode trr = 165–250 ns enables reliable freewheeling; 14 A continuous rating sustains overload conditions.

Use Scenario: Zero-crossing AC switching module replacing electromechanical relays in PLC I/O modules and building automation panels.

IC Role / Device Role / Timing Role: Main power switch controlling 120/230 V AC loads up to 10 A resistive; driven by optocoupled gate driver.

Use Value: 175 °C TJ(max) supports sealed enclosure operation; dV/dt immunity prevents spurious turn-on from AC line noise.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP20NM50FP500 V VDS, higher RDS(on) = 0.27 Ω, TO-220FP package, lower Qg = 45 nCBetter voltage margin but higher conduction loss; through-hole mounting onlyChoose when 500 V rating is mandatory and surface-mount is not required
IXTP12N25P250 V VDS, RDS(on) = 0.28 Ω, TO-220 package, EAS = 120 mJ, no dV/dt rating specifiedLower avalanche energy and missing dynamic dV/dt spec reduce robustness in noisy inductive loadsAcceptable for cost-sensitive non-critical linear or low-dI/dt switching where layout controls noise

Compared with STP20NM50FP and IXTP12N25P, the IRF644NSPBF offers superior combination of 250 V rating, low RDS(on), high EAS, and verified dV/dt immunity-making it preferred for surface-mount, high-reliability industrial switching where thermal and electrical stress coexist.

Availability

IRF644NSPBF is available at Aetrix Electronics and suitable for motor drives, DC-DC converters, and industrial UPS systems requiring stable component supply across extended production lifecycles.

Supply support for IRF644NSPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability and ruggedness.

The IRF644NSPBF belongs to Vishay's fifth-generation Power MOSFET family, engineered for high-efficiency, high-temperature, and high-avalanche-energy operation in industrial power conversion and motor control.

FAQ

What is the maximum continuous drain current for IRF644NSPBF at 100 °C case temperature?

The IRF644NSPBF supports 9.9 A continuous drain current at TC = 100 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits of the D2PAK package and must be validated with actual board-level thermal resistance (RthJA ≤ 40 °C/W for PCB mount). Designers should verify junction temperature using measured case temperature and RthJC = 1.0 °C/W.

Does IRF644NSPBF have a specified body diode reverse recovery charge (Qrr)?

Yes, the IRF644NSPBF has a specified body diode reverse recovery charge of Qrr = 1.0–1.6 µC at TJ = 25 °C, IF = 14 A, and dI/dt = 100 A/µs. This parameter directly affects switching loss and EMI in synchronous rectification and bridge configurations, and is documented in the "Drain-Source Body Diode Characteristics" section of the datasheet.

Is IRF644NSPBF pin-compatible with IRF644N or IRF644NL?

No, IRF644NSPBF is not pin-compatible with IRF644N (TO-220) or IRF644NL (I2PAK/TO-262). While all share identical die and electrical specs, IRF644NSPBF uses the D2PAK (TO-263) package with different mechanical footprint, thermal pad layout, and terminal spacing. PCB redesign is required when substituting between these variants.

What is the gate threshold voltage range for IRF644NSPBF?

The gate threshold voltage (VGS(th)) for IRF644NSPBF is 2.0 V minimum to 4.0 V maximum at VDS = VGS and ID = 250 µA. This range confirms compatibility with standard 10 V gate drivers but indicates insufficient margin for direct 5 V logic-level drive without gate boosting or level-shifting circuitry.

Can IRF644NSPBF be used in avalanche mode for energy clamping?

Yes, IRF644NSPBF is fully avalanche rated with single-pulse EAS = 180 mJ and repetitive EAR = 15 mJ. Its avalanche capability is validated per JEDEC standards and intended for controlled energy absorption during unclamped inductive switching-enabling simplified snubberless design in flyback, boost, and motor drive circuits where precise energy calculation is performed.

IRF644NSPBF Specifications

Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
-
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
250 V
Current - Continuous Drain (Id) @ 25°C:
14A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
240mOhm @ 8.4A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
54 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1060 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
150W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-263 (D2PAK)

IRF644NSPBF FAQ

1.How can I place an order for IRF644NSPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF644NSPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF644NSPBF reliable?

The price and inventory of IRF644NSPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF644NSPBF is usually 5 days.

3.What payment methods are accepted for IRF644NSPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF644NSPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF644NSPBF?

IRF644NSPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF644NSPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF644NSPBF?

For technical support, including IRF644NSPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF644NSPBF requirements.

6.How does Aetrix verify that IRF644NSPBF is sourced from the original manufacturer or authorized distributors?

All IRF644NSPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF644NSPBF meets industry standards.

7.What is the process for return or replacement of IRF644NSPBF?

All IRF644NSPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF644NSPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF644NSPBF part is unused and in its original packaging.

Return procedure for IRF644NSPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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